EP2004375A1 - Dispositif pour briser des plaquettes à semi-conducteurs au moyen d'un bloc de rupture - Google Patents

Dispositif pour briser des plaquettes à semi-conducteurs au moyen d'un bloc de rupture

Info

Publication number
EP2004375A1
EP2004375A1 EP07723841A EP07723841A EP2004375A1 EP 2004375 A1 EP2004375 A1 EP 2004375A1 EP 07723841 A EP07723841 A EP 07723841A EP 07723841 A EP07723841 A EP 07723841A EP 2004375 A1 EP2004375 A1 EP 2004375A1
Authority
EP
European Patent Office
Prior art keywords
breaking
predetermined breaking
semiconductor wafer
wafer
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07723841A
Other languages
German (de)
English (en)
Inventor
Jörg LINDNER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asys Automatisierungssysteme GmbH
Original Assignee
Dyntest Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dyntest Technologies GmbH filed Critical Dyntest Technologies GmbH
Publication of EP2004375A1 publication Critical patent/EP2004375A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly

Definitions

  • the invention relates to a device for breaking semiconductor wafers according to the features of the preamble of claim 1.
  • a wafer (English: “disk”) is a circular, a few 100 ⁇ m thick disk, on the electronic components, in particular integrated circuits (IC, “chip”) or micromechanical components by various technical methods getting produced.
  • IC integrated circuits
  • This disk is mostly made of monocrystalline silicon, but other materials such as silicon carbide, gallium arsenide and indium phosphide are also used. In microsystem technology, glass wafers with a thickness in the 1 mm range are also used.
  • the discs are made in different diameters.
  • the currently used mainly wafer diameter differ depending on the semiconductor material and intended use and are for SiIi- zium z. B. at 150 mm, 200 mm, 300 mm and in the future also at 450 mm, for gallium arsenide at 2 inches, 3 inches, 100 mm, 125 mm or 150 mm.
  • the larger the wafer the more integrated circuits, also called chips, can be accommodated on it. As the geometrical waste becomes smaller for larger wafers, the integrated circuits can be produced more cheaply.
  • the surfaces of the wafers must be optically mirror-polished. With regard to the flatness of the wafers, the perfection of the polish and the purity of the surface, extreme demands apply. For example, only unevenness of a few nm over the entire wafer surface is permissible.
  • the wafers are labeled with so-called fats. It is indicated with the help of a primary and possibly a secondary Fiat, which angular orientation is present and which crystal orientation has the surface. In recent times, instead of the Fiat notches, so-called notches used. They offer the advantage of better positioning and, above all, less waste.
  • the semiconductor wafers are first subdivided into individual strips with the aid of already known methods and devices.
  • the respective dividing lines are marked in advance by means of a diamond stylus on the upper side of the semiconductor wafer by notched notches accordingly.
  • a pulse bar then presses against the semiconductor wafer whose top surface is supported on an anvil at the predetermined break line prepared so far. Since in the known device impulse rod and anvil are arranged directly above one another, the pressure exerted by the impulse rod pressure on the one hand must be sufficiently large on the one hand to trigger a controlled separation process against the pressure of the anvil. On the other hand, the pressure must not be too low, because otherwise there is a danger that sufficient and complete separation can not be achieved. It therefore requires a high precision in terms of contact pressure in order to ensure the lowest possible separation error rate.
  • gallium-arsenide based wafers which in principle have a comparatively smaller diameter, become occasionally refrained from scratching the surface over the entire length of the predetermined breaking line. Usually then only a smaller portion, preferably only a relatively short initial region of a predetermined breaking line is marked by a scoring.
  • the present invention is therefore an object of the invention to improve a device of the type mentioned above, that even for semiconductor wafers, the predetermined breaking points are marked only in a short initial range by a previously performed incision, achieved a simple and secure separation while minimizing the error rate can be.
  • Fig. 1 shows the basic structure of an inventively designed device for dividing a semiconductor wafer into individual subregions.
  • an annular holder 2 is used, on which the semiconductor wafer 1 fastened on a flexible base is fixed to the edge regions. This is preferably done by creating a negative pressure over a plurality of suction nozzles.
  • a crushing wedge 3 which is aligned with the predetermined breaking line, serves against the underside of the semiconductor wafer. disk 1 presses.
  • the angle of inclination of the crushing wedge is advantageously in the range of less than 5 degrees and, in adaptation to the respective material thicknesses of the semiconductor wafers to be processed, is preferably variably and steplessly adjustable within the predetermined range.
  • the breaker wedge is controllable in such a way that in a first phase only a break-up and only in a second phase the complete severing of the predetermined breaking line takes place.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

L'invention concerne un dispositif pour briser des plaquettes à semi-conducteurs (1) sur la partie supérieure de la plaquette au moyen de lignes de rupture prédéterminées, rainurées et qui s'étendent le long d'une ligne droite, à l'aide d'un bloc de rupture et au moins d'un élément de retenue. Le bloc de rupture est positionné au fond de la plaquette de façon à être aligné sur la ligne de rupture prédéterminée correspondante. L'élément de retenue est placé sur la partie supérieure de la plaquette et exerce une contre-pression, lorsque le bloc de rupture (3) est pressé contre le fond de la plaquette. Pour les plaquettes à semi-conducteurs qui sont rainurées uniquement au début de la ligne de rupture prédéterminée, le bloc de rupture peut être incliné par rapport au plan de la plaquette, de manière à exercer une pression uniquement sur le début de la ligne de rupture prédéterminée, qui a été rainuré.
EP07723841A 2006-03-31 2007-03-30 Dispositif pour briser des plaquettes à semi-conducteurs au moyen d'un bloc de rupture Withdrawn EP2004375A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200610015141 DE102006015141A1 (de) 2006-03-31 2006-03-31 Vorrichtung zum Brechen von Halbleiterscheiben mit Hilfe eines Brechkeils
PCT/EP2007/002900 WO2007112984A1 (fr) 2006-03-31 2007-03-30 Dispositif pour briser des plaquettes à semi-conducteurs au moyen d'un bloc de rupture

Publications (1)

Publication Number Publication Date
EP2004375A1 true EP2004375A1 (fr) 2008-12-24

Family

ID=38198357

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07723841A Withdrawn EP2004375A1 (fr) 2006-03-31 2007-03-30 Dispositif pour briser des plaquettes à semi-conducteurs au moyen d'un bloc de rupture

Country Status (3)

Country Link
EP (1) EP2004375A1 (fr)
DE (1) DE102006015141A1 (fr)
WO (1) WO2007112984A1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3396452A (en) * 1965-06-02 1968-08-13 Nippon Electric Co Method and apparatus for breaking a semiconductor wafer into elementary pieces
US3958733A (en) * 1973-08-27 1976-05-25 Libbey-Owens-Ford Company Method for simultaneously breaking a plurality of frangible sheets
DD254085A1 (de) * 1986-11-28 1988-02-10 Elektronische Bauelemente Veb Verfahren und vorrichtung zum vereinzeln von substratstreifen
DE4029973A1 (de) * 1990-09-21 1992-03-26 Siemens Ag Brecheinrichtung zum vereinzeln von angesaegten und/oder angeritzten halbleiterwafern zu chips
JPH053242A (ja) * 1991-06-25 1993-01-08 Fujitsu Ltd チツプ剥離装置
JPH0629388A (ja) * 1992-07-07 1994-02-04 Hitachi Ltd ウエーハブレーキング・分離方法及びその実施装置
FR2749794B1 (fr) * 1996-06-13 1998-07-31 Charil Josette Dispositif de clivage d'une plaque de materiau semi-conducteur
JP2002127132A (ja) * 2000-10-23 2002-05-08 Sharp Corp 劈開装置および劈開方法
DE202006005238U1 (de) * 2006-03-31 2006-08-17 Dyntest Technologies Gmbh Vorrichtung zum Brechen von Halbleiterscheiben oder ähnlichen Substraten
DE202006005237U1 (de) * 2006-03-31 2006-11-23 Dyntest Technologies Gmbh Vorrichtung zum Brechen von Halbleiterscheiben mit Hilfe eines Brechkeils

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007112984A1 *

Also Published As

Publication number Publication date
DE102006015141A1 (de) 2007-10-04
WO2007112984A1 (fr) 2007-10-11

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Legal Events

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Owner name: ASYS AUTOMATISIERUNGSSYSTEME GMBH

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