EP2004375A1 - Device for breaking semiconductor wafers using a breaking block - Google Patents
Device for breaking semiconductor wafers using a breaking blockInfo
- Publication number
- EP2004375A1 EP2004375A1 EP07723841A EP07723841A EP2004375A1 EP 2004375 A1 EP2004375 A1 EP 2004375A1 EP 07723841 A EP07723841 A EP 07723841A EP 07723841 A EP07723841 A EP 07723841A EP 2004375 A1 EP2004375 A1 EP 2004375A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- breaking
- predetermined breaking
- semiconductor wafer
- wafer
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
Definitions
- the invention relates to a device for breaking semiconductor wafers according to the features of the preamble of claim 1.
- a wafer (English: “disk”) is a circular, a few 100 ⁇ m thick disk, on the electronic components, in particular integrated circuits (IC, “chip”) or micromechanical components by various technical methods getting produced.
- IC integrated circuits
- This disk is mostly made of monocrystalline silicon, but other materials such as silicon carbide, gallium arsenide and indium phosphide are also used. In microsystem technology, glass wafers with a thickness in the 1 mm range are also used.
- the discs are made in different diameters.
- the currently used mainly wafer diameter differ depending on the semiconductor material and intended use and are for SiIi- zium z. B. at 150 mm, 200 mm, 300 mm and in the future also at 450 mm, for gallium arsenide at 2 inches, 3 inches, 100 mm, 125 mm or 150 mm.
- the larger the wafer the more integrated circuits, also called chips, can be accommodated on it. As the geometrical waste becomes smaller for larger wafers, the integrated circuits can be produced more cheaply.
- the surfaces of the wafers must be optically mirror-polished. With regard to the flatness of the wafers, the perfection of the polish and the purity of the surface, extreme demands apply. For example, only unevenness of a few nm over the entire wafer surface is permissible.
- the wafers are labeled with so-called fats. It is indicated with the help of a primary and possibly a secondary Fiat, which angular orientation is present and which crystal orientation has the surface. In recent times, instead of the Fiat notches, so-called notches used. They offer the advantage of better positioning and, above all, less waste.
- the semiconductor wafers are first subdivided into individual strips with the aid of already known methods and devices.
- the respective dividing lines are marked in advance by means of a diamond stylus on the upper side of the semiconductor wafer by notched notches accordingly.
- a pulse bar then presses against the semiconductor wafer whose top surface is supported on an anvil at the predetermined break line prepared so far. Since in the known device impulse rod and anvil are arranged directly above one another, the pressure exerted by the impulse rod pressure on the one hand must be sufficiently large on the one hand to trigger a controlled separation process against the pressure of the anvil. On the other hand, the pressure must not be too low, because otherwise there is a danger that sufficient and complete separation can not be achieved. It therefore requires a high precision in terms of contact pressure in order to ensure the lowest possible separation error rate.
- gallium-arsenide based wafers which in principle have a comparatively smaller diameter, become occasionally refrained from scratching the surface over the entire length of the predetermined breaking line. Usually then only a smaller portion, preferably only a relatively short initial region of a predetermined breaking line is marked by a scoring.
- the present invention is therefore an object of the invention to improve a device of the type mentioned above, that even for semiconductor wafers, the predetermined breaking points are marked only in a short initial range by a previously performed incision, achieved a simple and secure separation while minimizing the error rate can be.
- Fig. 1 shows the basic structure of an inventively designed device for dividing a semiconductor wafer into individual subregions.
- an annular holder 2 is used, on which the semiconductor wafer 1 fastened on a flexible base is fixed to the edge regions. This is preferably done by creating a negative pressure over a plurality of suction nozzles.
- a crushing wedge 3 which is aligned with the predetermined breaking line, serves against the underside of the semiconductor wafer. disk 1 presses.
- the angle of inclination of the crushing wedge is advantageously in the range of less than 5 degrees and, in adaptation to the respective material thicknesses of the semiconductor wafers to be processed, is preferably variably and steplessly adjustable within the predetermined range.
- the breaker wedge is controllable in such a way that in a first phase only a break-up and only in a second phase the complete severing of the predetermined breaking line takes place.
Abstract
The invention relates to a device for breaking semiconductor wafers (1) on the upper side of the semiconductor wafer by means of predetermined breaking lines that are marked by scribing and extend along a straight line, using a breaking block and at least one steadying element. The breaking block is positioned on the bottom side of the wafer so as to be aligned with the respective predetermined breaking line. The steadying element is supported on the upper side of the wafer and exerts a counterpressure when the breaking block (3) presses against the bottom side of the wafer. For semiconductor wafers which are only scribed in a starting area of the predetermined breaking line, the breaking block can be tilted relative to the plane of the wafer in such a manner that the breaking block exerts pressure only in the starting area of the predetermined breaking line which has been pretreated by scribing.
Description
Beschreibung description
Vorrichtung zum Brechen von Halbleiterscheiben mit Hilfe eines BrechkeilsDevice for breaking semiconductor wafers with the aid of a breaking wedge
Die Erfindung betrifft eine Vorrichtung zum Brechen von Halbleiterscheiben bzw. Wafern nach den Merkmalen des Oberbegriffs des Anspruchs 1.The invention relates to a device for breaking semiconductor wafers according to the features of the preamble of claim 1.
Als Wafer (engl. "Scheibe") wird in der Halbleiterindustrie und Mikroelektronik eine kreisrunde, wenige 100 μm dicke Scheibe bezeichnet, auf der elektroni- sehe Bauelemente, vor allem integrierte Schaltkreise (IC, "Chip") oder mikromechanische Bauelemente durch verschiedene technische Verfahren hergestellt werden.In the semiconductor industry and microelectronics, a wafer (English: "disk") is a circular, a few 100 μm thick disk, on the electronic components, in particular integrated circuits (IC, "chip") or micromechanical components by various technical methods getting produced.
Diese Scheibe besteht in den meisten Fällen aus monokristallinem Silizium, es werden aber auch andere Materialien wie Siliziumcarbid, Gallium-Arsenid und Indium-Phosphid verwendet. In der Mikrosystemtechnik werden auch Glaswa- fer mit einer Dicke im 1-mm-Bereich verwendet.This disk is mostly made of monocrystalline silicon, but other materials such as silicon carbide, gallium arsenide and indium phosphide are also used. In microsystem technology, glass wafers with a thickness in the 1 mm range are also used.
Die Scheiben werden in verschiedenen Durchmessern gefertigt. Die zur Zeit hauptsächlich verwendeten Waferdurchmesser unterscheiden sich je nach Halbleiterwerkstoff und vorgesehenem Verwendungszweck und liegen für SiIi- zium z. B. bei 150 mm, 200 mm, 300 mm und künftig auch bei 450 mm, für Gallium-Arsenid bei 2 Zoll, 3 Zoll, 100 mm, 125 mm oder 150 mm. Je größer der Wafer, desto mehr integrierte Schaltkreise, auch Chips genannt, können darauf untergebracht werden. Da bei größeren Wafern der geometrische Verschnitt kleiner wird, können die integrierten Schaltkreise kostengünstiger produziert werden.
Für die meisten Anwendungen müssen die Oberflächen der Wafer optisch spiegelnd poliert sein. Hinsichtlich der Ebenheit der Wafer, der Perfektion der Politur und der Reinheit der Oberfläche gelten extreme Forderungen. So sind beispielsweise nur Unebenheiten von wenigen nm über die gesamte Waferflä- che zulässig.The discs are made in different diameters. The currently used mainly wafer diameter differ depending on the semiconductor material and intended use and are for SiIi- zium z. B. at 150 mm, 200 mm, 300 mm and in the future also at 450 mm, for gallium arsenide at 2 inches, 3 inches, 100 mm, 125 mm or 150 mm. The larger the wafer, the more integrated circuits, also called chips, can be accommodated on it. As the geometrical waste becomes smaller for larger wafers, the integrated circuits can be produced more cheaply. For most applications, the surfaces of the wafers must be optically mirror-polished. With regard to the flatness of the wafers, the perfection of the polish and the purity of the surface, extreme demands apply. For example, only unevenness of a few nm over the entire wafer surface is permissible.
Da für die Verarbeitung der Wafer die exakte Position in der bearbeitenden Maschine wichtig ist, werden die Wafer mit sogenannten Fiats gekennzeichnet. Dabei wird mit Hilfe eines primären und eventuell einem sekundären Fiat angezeigt, welche Winkelorientierung vorliegt und welche Kristallorientierung die Oberfläche hat. In neuerer Zeit werden an Stelle der Fiats Kerben, so genannte Notches, eingesetzt. Sie bieten den Vorteil der besseren Positionierung und verursachen vor allem weniger Verschnitt.Since the exact position in the processing machine is important for the processing of the wafers, the wafers are labeled with so-called fats. It is indicated with the help of a primary and possibly a secondary Fiat, which angular orientation is present and which crystal orientation has the surface. In recent times, instead of the Fiat notches, so-called notches used. They offer the advantage of better positioning and, above all, less waste.
Um die einzelnen Schaltkreise voneinander zu trennen, werden die Halbleiterscheiben mit Hilfe bereits bekannter Verfahren und Vorrichtungen zunächst in einzelnen Streifen unterteilt. Dabei werden die jeweiligen Trennlinien vorab mittels eines Diamantstichels an der Oberseite der Halbleiterscheibe durch eingeritzte Kerben entsprechend markiert. Bei der beispielsweise aus der aus EP 0 740 598 B1 bekannten Vorrichtung drückt anschließend ein Impulsstab an der insoweit vorbereiteten Sollbruchlinie von der Unterseite gegen die Halbleiter- scheibe, deren Oberseite sich an einem Amboss abstützt. Da bei der bekannten Vorrichtung Impulsstab und Amboss direkt übereinander angeordnet sind, muss der seitens des Impulsstabes ausgeübte Druck einerseits ausreichend groß sein, um gegen den Druck des Ambosses einen kontrollierten Trennvorgang auszulösen. Andererseits darf der Druck nicht zu gering sein, weil sonst die Gefahr besteht, dass keine ausreichende und vollständige Trennung erreicht werden kann. Es bedarf deshalb einer hohen Präzision hinsichtlich des Anpressdruckes, um eine möglichst geringe Trennfehlerquote zu gewährleisten.In order to separate the individual circuits, the semiconductor wafers are first subdivided into individual strips with the aid of already known methods and devices. In this case, the respective dividing lines are marked in advance by means of a diamond stylus on the upper side of the semiconductor wafer by notched notches accordingly. In the case of the device known from EP 0 740 598 B1, for example, a pulse bar then presses against the semiconductor wafer whose top surface is supported on an anvil at the predetermined break line prepared so far. Since in the known device impulse rod and anvil are arranged directly above one another, the pressure exerted by the impulse rod pressure on the one hand must be sufficiently large on the one hand to trigger a controlled separation process against the pressure of the anvil. On the other hand, the pressure must not be too low, because otherwise there is a danger that sufficient and complete separation can not be achieved. It therefore requires a high precision in terms of contact pressure in order to ensure the lowest possible separation error rate.
Insbesondere bei Halbleiterscheiben auf Gallium-Arsenid-Basis, die im Prinzip einen vergleichsweise kleineren Durchmesser aufweisen, wird gelegentlich
darauf verzichtet, die Oberfläche jeweils über die gesamte Länge der Sollbruchlinie anzuritzen. Üblicherweise wird dann nur ein kleinerer Abschnitt, vorzugsweise nur ein relativ kurzer Anfangsbereich einer Sollbruchlinie durch eine Einritzung markiert.In particular, gallium-arsenide based wafers, which in principle have a comparatively smaller diameter, become occasionally refrained from scratching the surface over the entire length of the predetermined breaking line. Usually then only a smaller portion, preferably only a relatively short initial region of a predetermined breaking line is marked by a scoring.
Der vorliegenden Erfindung liegt deshalb die Aufgabe zugrunde, eine Vorrichtung der eingangs genannten Art so zu verbessern, dass auch für Halbleiterscheiben, deren Sollbruchstellen nur in einem kurzen Anfangsbereich durch eine vorab durchgeführte Einritzung markiert sind, eine einfache und sichere Trennung bei gleichzeitig möglichst geringer Fehlerquote erzielt werden kann.The present invention is therefore an object of the invention to improve a device of the type mentioned above, that even for semiconductor wafers, the predetermined breaking points are marked only in a short initial range by a previously performed incision, achieved a simple and secure separation while minimizing the error rate can be.
Diese Aufgabe wird erfindungsgemäß durch eine Vorrichtung mit den Merkmalen des Anspruchs 1 gelöst. Erfindungsgemäß ist vorgesehen, dass für lediglich im Anfangsbereich einer Sollbruchlinie vorgeritzte Halbleiterscheiben der Brechkeil gegenüber der Ebene der Halbleiterscheibe derart geneigt ausgerichtet ist, dass eine Druckausübung seitens des Brechkeils ausschließlich in dem durch die Ritzung vorbehandelten Anfangsbereich der Sollbruchlinie erfolgt.This object is achieved by a device having the features of claim 1. According to the invention it is provided that for only in the initial region of a predetermined breaking line pre-scored semiconductor wafers the refractive wedge is oriented inclined relative to the plane of the semiconductor wafer, that a pressure exerted by the crushing wedge exclusively in the pre-treated by scratching the initial region of the predetermined breaking line.
Vorteilhafte Weiterbildungen der Erfindung ergeben sich aus den Merkmalen der Unteransprüche.Advantageous developments of the invention will become apparent from the features of the dependent claims.
Ein Ausführungsbeispiel der Erfindung wird im Folgenden an Hand der Zeichnungen näher beschrieben.An embodiment of the invention will be described in more detail below with reference to the drawings.
Fig. 1. zeigt den prinzipiellen Aufbau einer erfindungsgemäß ausgebildeten Vorrichtung zur Aufteilung einer Halbleiterscheibe in einzelne Teilbereiche. Zur lösbaren Befestigung der kreisförmigen Halbleiterscheibe 1 dient eine ringförmige Halterung 2, an der die auf einer flexiblen Unterlage befestigte Halbleiterscheibe 1 an den Randbereichen fixiert wird. Vorzugsweise geschieht dies da- durch, dass über mehrere Ansaugdüsen ein Unterdruck erzeugt wird. Zur Trennung der Halbleiterscheibe 1 entlang einer Sollbruchlinie, die vorab durch eine an der Oberseite eingeritzte Kerbe markiert ist, dient ein fluchtend zur Sollbruchlinie ausgerichteter Brechkeil 3, der gegen die Unterseite der Halblei-
terscheibe 1 drückt. Für Halbleiterscheiben, deren Sollbruchlinien aus Kostengründen nur einem relativ kurzen Anfangsbereich und damit nicht in voller Länge durch eine Anritzung vorbehandelt sind, was insbesondere bei Halbleiterscheiben mit kleinerem Durchmesser in Betracht kommt, ist der Brechkeil ge- genüber der Ebene der Halbleiterscheibe derart geneigt ausgerichtet, dass eine Druckausübung seitens des Brechkeils ausschließlich in dem durch die Ritzung vorbehandelten Anfangsbereich der Sollbruchlinie erfolgt. Der Neigungswinkel des Brechkeils liegt in vorteilhafter im Bereich kleiner 5 Grad und ist in Anpassung an die jeweiligen Materialstärken der zu bearbeitenden Halbleiter- Scheiben vorzugsweise innerhalb des vorgegebenen Bereichs variabel und stufenlos einstellbar. In einer vorteilhaften Weiterbildung der Erfindung ist der Brechkeil derart steuerbar, dass in einer ersten Phase zunächst nur ein Aufbrechen und erst in einer zweiten Phase die vollständige Durchtrennung der Sollbruchlinie erfolgt.Fig. 1. shows the basic structure of an inventively designed device for dividing a semiconductor wafer into individual subregions. For releasably securing the circular semiconductor wafer 1, an annular holder 2 is used, on which the semiconductor wafer 1 fastened on a flexible base is fixed to the edge regions. This is preferably done by creating a negative pressure over a plurality of suction nozzles. In order to separate the semiconductor wafer 1 along a predetermined breaking line, which is marked in advance by a notch scratched on the upper side, a crushing wedge 3, which is aligned with the predetermined breaking line, serves against the underside of the semiconductor wafer. disk 1 presses. For semiconductor wafers, the predetermined breaking lines of which are pretreated for cost reasons only a relatively short initial area and thus not in full length by a scribe, which is particularly suitable for semiconductor wafers with a smaller diameter, the refractive index is compared to the plane of the semiconductor wafer inclined so aligned that a pressure exerted by the crushing wedge exclusively in the pretreated by scratching the initial region of the predetermined breaking line. The angle of inclination of the crushing wedge is advantageously in the range of less than 5 degrees and, in adaptation to the respective material thicknesses of the semiconductor wafers to be processed, is preferably variably and steplessly adjustable within the predetermined range. In an advantageous development of the invention, the breaker wedge is controllable in such a way that in a first phase only a break-up and only in a second phase the complete severing of the predetermined breaking line takes place.
BezugszeichenlisteLIST OF REFERENCE NUMBERS
1 Halbleiterscheibe Halterung1 semiconductor wafer holder
3 Brechkeil
3 crushing wedge
Claims
1. Vorrichtung zum Brechen von Halbleiterscheiben bzw. Wafern an der Oberseite der Halbleiterscheibe durch eine Ritzung markierten und jeweils längs einer Gerade verlaufenden Sollbruchlinien, unter Verwendung eines an der Unterseite der Halbleiterscheibe fluchtend zur jeweiligen Sollbruchlinie ausgerichteten Brechkeils und wenigstens eines Gegenhalters, der sich auf der Oberseite der Halbleiterscheibe abstützt und im Augenblick des sich an der Unterseite der Halbleiterscheibe andrückenden Brechkeils einen Gegendruck auslöst, dadurch gekennzeichnet, dass für lediglich im Anfangsbereich einer Sollbruchlinie vorgeritzte Halbleiterscheiben (1) der Brechkeil (3) gegenüber der Ebene der Halbleiterscheibe derart geneigt ausgerichtet ist, dass eine Druckausübung seitens des Brechkeils (3) ausschließlich in dem durch die Ritzung vorbehandelten Anfangsbereich der Sollbruchlinie erfolgt.1. A device for breaking semiconductor wafers or wafers on the upper side of the semiconductor wafer by a scribe marked and each along a straight line extending predetermined breaking lines, using a aligned on the underside of the semiconductor wafer in alignment with the respective predetermined breaking line Brechkeils and at least one counter-holder, based on the Supports the upper side of the semiconductor wafer and triggers a counterpressure at the moment of the crushing wedge pressing against the underside of the semiconductor wafer, characterized in that for only in the initial region of a predetermined breaking line pre-scored semiconductor wafers (1) of the crushing wedge (3) is oriented inclined relative to the plane of the semiconductor wafer, that a pressure exerted by the crushing wedge (3) exclusively in the pretreated by scratching the initial region of the predetermined breaking line.
2. Vorrichtung nach Anspruch 1 , dadurch gekennzeichnet, dass der Nei- gungswinkel des Brechkeils (3) im Bereich kleiner 5 Grad liegt.2. Apparatus according to claim 1, characterized in that the inclination angle of the crushing wedge (3) is in the range of less than 5 degrees.
3. Vorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Neigungswinkel des Brechkeils (3) innerhalb des vorgegebenen Bereichs variabel und stufenlos einstellbar ist.3. Apparatus according to claim 1 or 2, characterized in that the angle of inclination of the crushing wedge (3) within the predetermined range is variably and continuously adjustable.
4. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Brechkeil (3) derart steuerbar ist, dass in einer ersten Phase ein Aufbrechen und in einer zweiten Phase eine vollständige Trennung der Solltrennlinie erfolgt. 4. Device according to one of the preceding claims, characterized in that the crushing wedge (3) is controllable such that in a first phase, a break-up and in a second phase, a complete separation of the predetermined breaking line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200610015141 DE102006015141A1 (en) | 2006-03-31 | 2006-03-31 | Semiconductor wafer breaking device for e.g. integrated circuit chip, has wedge arranged at lower side of wafer premarked in starting area of break line, and arranged opposite to wafer plane such that pressure is exerted at wedge sides |
| PCT/EP2007/002900 WO2007112984A1 (en) | 2006-03-31 | 2007-03-30 | Device for breaking semiconductor wafers using a breaking block |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2004375A1 true EP2004375A1 (en) | 2008-12-24 |
Family
ID=38198357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07723841A Withdrawn EP2004375A1 (en) | 2006-03-31 | 2007-03-30 | Device for breaking semiconductor wafers using a breaking block |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP2004375A1 (en) |
| DE (1) | DE102006015141A1 (en) |
| WO (1) | WO2007112984A1 (en) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3396452A (en) * | 1965-06-02 | 1968-08-13 | Nippon Electric Co | Method and apparatus for breaking a semiconductor wafer into elementary pieces |
| US3958733A (en) * | 1973-08-27 | 1976-05-25 | Libbey-Owens-Ford Company | Method for simultaneously breaking a plurality of frangible sheets |
| DD254085A1 (en) * | 1986-11-28 | 1988-02-10 | Elektronische Bauelemente Veb | METHOD AND DEVICE FOR ASSEMBLING SUBSTRATE STRIPS |
| DE4029973A1 (en) * | 1990-09-21 | 1992-03-26 | Siemens Ag | Sawn or scored wafer breaking device - for sepg. individual chips, esp. led chips |
| JPH053242A (en) * | 1991-06-25 | 1993-01-08 | Fujitsu Ltd | Chip removing apparatus |
| JPH0629388A (en) * | 1992-07-07 | 1994-02-04 | Hitachi Ltd | Method and apparatus for wafer breaking and separation |
| FR2749794B1 (en) * | 1996-06-13 | 1998-07-31 | Charil Josette | DEVICE FOR DIVIDING A PLATE OF SEMICONDUCTOR MATERIAL |
| JP2002127132A (en) * | 2000-10-23 | 2002-05-08 | Sharp Corp | Apparatus and method for cleaving |
| DE202006005238U1 (en) * | 2006-03-31 | 2006-08-17 | Dyntest Technologies Gmbh | Device for breaking of semiconductor disks has two counter holder which are facing upper side of semiconductor disk, which with one another is positioned, vertical and horizontal, at two opposite side of breaking line |
| DE202006005237U1 (en) * | 2006-03-31 | 2006-11-23 | Dyntest Technologies Gmbh | Device for breaking of semiconductor disks or wafers has breaking wedge, tilted and aligned opposite to section of semiconductor disk for single semiconductor disk that is pre scratched in initial area of reference break line |
-
2006
- 2006-03-31 DE DE200610015141 patent/DE102006015141A1/en not_active Withdrawn
-
2007
- 2007-03-30 EP EP07723841A patent/EP2004375A1/en not_active Withdrawn
- 2007-03-30 WO PCT/EP2007/002900 patent/WO2007112984A1/en active Application Filing
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2007112984A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102006015141A1 (en) | 2007-10-04 |
| WO2007112984A1 (en) | 2007-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2028164B1 (en) | Method and device for separating a plan plate made of brittle material into several individual plates with a laser | |
| AT500075B1 (en) | DEVICE AND METHOD FOR CONNECTING WAFER | |
| DE2028910A1 (en) | Device for testing and sorting electrical Schaltungsele elements | |
| DE102019212927A1 (en) | PROCESSING METHOD FOR A SIC SUBSTRATE | |
| DE102019212100B4 (en) | BACKING PLATE DETACHMENT PROCEDURE | |
| DE102020200724B4 (en) | Backing plate removal procedure | |
| DE102006015142B4 (en) | Device for breaking semiconductor wafers | |
| EP3234992B1 (en) | Method and appartus for detaching a micro-chip from a wafer and placement of the micro-chip on a substrate | |
| WO2007112984A1 (en) | Device for breaking semiconductor wafers using a breaking block | |
| WO2006072493A1 (en) | Method for producing semiconductor chips from a wafer | |
| DE202006005237U1 (en) | Device for breaking of semiconductor disks or wafers has breaking wedge, tilted and aligned opposite to section of semiconductor disk for single semiconductor disk that is pre scratched in initial area of reference break line | |
| DE202006005238U1 (en) | Device for breaking of semiconductor disks has two counter holder which are facing upper side of semiconductor disk, which with one another is positioned, vertical and horizontal, at two opposite side of breaking line | |
| DE102014227005B4 (en) | Process for dividing a wafer into chips | |
| DE102020211312A1 (en) | WAFER GRINDING PROCESS | |
| DE112004001036T5 (en) | Diamond disc and scoring device | |
| DE102016219811B4 (en) | Wafer processing process | |
| DE102018217410A1 (en) | Workpiece grinding method | |
| EP2143537B1 (en) | Method and device for breaking semiconductor discs or similar substrates | |
| DE102018205019A1 (en) | LASER PROCESSING METHOD OF A WAFERS | |
| DE102014219908A1 (en) | Production method for a photomask | |
| DE102020211915A1 (en) | METHOD OF GRINDING A SUBSTRATE | |
| DE102019218879A1 (en) | WAFER PROCESSING PROCESS | |
| DE10030004A1 (en) | Device for storing an optical element, e.g. a lens in a lens | |
| DE202006013398U1 (en) | Device for scoring semi-conductor wafers or similar substrates has precision drive which is connected with force transducer which is mechanically coupled with scoring tool holder guided in axial direction in damping element | |
| DE102020210751A1 (en) | METHOD OF REMOVING A CARRIER PLATE |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20081031 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ASYS AUTOMATISIERUNGSSYSTEME GMBH |
|
| DAX | Request for extension of the european patent (deleted) | ||
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20121002 |