EP1946377A2 - Diode de puissance sic-pn - Google Patents

Diode de puissance sic-pn

Info

Publication number
EP1946377A2
EP1946377A2 EP06793619A EP06793619A EP1946377A2 EP 1946377 A2 EP1946377 A2 EP 1946377A2 EP 06793619 A EP06793619 A EP 06793619A EP 06793619 A EP06793619 A EP 06793619A EP 1946377 A2 EP1946377 A2 EP 1946377A2
Authority
EP
European Patent Office
Prior art keywords
power diode
layer
drift zone
drift
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06793619A
Other languages
German (de)
English (en)
Inventor
Peter Friedrichs
Dethard Peters
Reinhold SCHÖRNER
Dietrich Stephani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
SiCED Electronics Development GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SiCED Electronics Development GmbH and Co KG filed Critical SiCED Electronics Development GmbH and Co KG
Publication of EP1946377A2 publication Critical patent/EP1946377A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Definitions

  • the invention relates to an integrated vertical silicon carbide PN power diode and a circuit arrangement with such power diodes.
  • Today's semiconductor devices are produced predominantly from a semiconductor material such as silicon or gallium arsenide (GaAs) and gallium phosphide (Ga 3 P 4) which have, however, a low thermal, chemical and physical Stabili ⁇ ty.
  • a semiconductor material such as silicon or gallium arsenide (GaAs) and gallium phosphide (Ga 3 P 4) which have, however, a low thermal, chemical and physical Stabili ⁇ ty.
  • Silicon carbide is a semiconductor material having a physically highly stable crystal structure because of its particular Wurtzite- or Zinkblendekris ⁇ tallgitters.
  • SiC Silicon carbide
  • WO ⁇ SEN energy bandgap of 2.2 eV to 3.3 eV
  • SiC-based semiconductor Bauele ⁇ elements are able, in a wide voltage and temperature ⁇ raturintervall, for example up to 650 C to 800 ° C to ar ⁇ BEITEN, have very good switching characteristics and low losses, and can also be operated at very high working frequencies.
  • Compared to silicon SiC has due to the better material properties a stronger breakdown field (up to 10 times higher than silicon), a higher thermal conductivity (more than 3 times higher than Sili ⁇ zium) and a larger energy band gap (2.9 eV for 6H-SiC).
  • SiC is particularly suitable for power devices with very high reverse voltage (600 V to several kV), such as High voltage (switching) diodes and field effect transistors.
  • Such SiC-semiconductor devices for example in order ⁇ inverters used for electric drives, in switching power supplies or in uninterruptible power supplies.
  • the use of higher operating voltages usually has the purpose of being able to implement larger electrical powers (in the range of a few kilowatts) for the same current.
  • SiC semiconductor technology is still relatively young and, in many respects, not yet optimized, there are a number of problems to be solved in the production of SiC-based semiconductor devices to be solved, to SiC devices in many device variants and in large quantities reality can be.
  • This is in particular because the same methods can not be used for the production of SiC components, which are also used in silicon components.
  • doping by diffusion in SiC is almost impossible to achieve.
  • the electrical activation of the doping atoms introduced during the ion implantation is relatively difficult to control for SiC.
  • SiC is preferably for technologically relatively easy to manufacture semiconductor devices such.
  • Fig. 1 of the drawing shows a schematic partial section the structure of a SiC power diode to explain the general problem.
  • the denoted by reference numeral 1 SiC power diode includes a heavily N-doped SiC semiconductor substrate, which is for example part of a
  • SiC semiconductor wafer is.
  • the semiconductor substrate 2 is connected back ⁇ side with a cathode terminal K.
  • On the side before ⁇ of the SiC semiconductor substrate 2 are in succession an n-doped buffer layer 3, a weakly n-doped drift zone 4 and a highly P doped emitter zone 5, the side on the front ⁇ is connected to an anode terminal A, applied.
  • the thickness of the drift zone 4 and its doping concentration essentially determines the blocking characteristics of the power diode 1.
  • Fig. Ia shows in idealized form, the current / voltage characteristic of the SiC power diode of Fig. 1 as a function of the temperature T, being given on the abscissa the forward voltage UF and the ordinate of this current I flowing at ⁇ .
  • KP it is the crossing point of the two diode characteristics at high currents or high forward voltages.
  • SiC power diode is typically located below the crossing point KP of the diode characteristics.
  • Fig. Ia shows that the forward voltage UF decreases with increasing temperature T at a predetermined impressed current I.
  • the diode current I increases with increasing temperature T. This phenomenon is referred to as negative Temperaturkoeffi ⁇ coefficient (dV / dt ⁇ 0) at constant current.
  • diodes for example silicon diodes, in contrast have a positive temperature coefficient at which the forward voltage UF at a constant diode current I increases with increasing temperature T as well.
  • the phenomenon of the negative temperature coefficient is due to a minority carrier lifetime which increases with increasing temperature. Additionally or alternatively, this phenomenon is also due to a decreasing contact resistance between the anode metallization and the heavily P-doped emitter zone with increasing temperature.
  • the present invention has for its object to provide an improved SiC power diode which has a particularly with regard to their current / voltage characteristics improved thermal dependence on ⁇ .
  • a further object is to counteract the negative temperature coefficient in the case of a SiC power diode operated in the region of the operating point.
  • the invention according to claim 1 is an integrated vertical SiC-PN power diode, with a highly doped SiC semiconductor body of a first conductivity type, - with a low-doped drift zone of the first conductivity type, which is arranged on the emitter side over the semiconductor body, an emitter region of a second conductivity type disposed on the drift region, with at least one inside the drift region twisted ⁇ NEN intermediate layer disposed the first conductivity type which has a relation to the drift region higher doping concentration and the drift zone at least one in a first anode-side drift region layer and at least in divided second cathode side drift zone layer.
  • the invention further relates to a circuit arrangement, in particular butterelektro ⁇ African module,
  • the technical teaching of the present invention into ⁇ particular is in the range of the drift region at least a interim ⁇ rule layer of the same conductivity type as in the Driftzo ⁇ ne be arranged, which has at least a significantly higher Dotie ⁇ approximately concentration than the drift region.
  • the drift region is at least tert rushes into two subregions un ⁇ .
  • the anode-side portion of the drift region ( ⁇ first drift zone layer) is to form a space charge zone which gear upon application of a reverse voltage to the PN over- formed between emitter region and the drift region.
  • ⁇ as this space charge region not possible ranges drift region side to un ⁇ indirectly against the intermediate layer, but in the intermediate layer and the underlying second layer into the drift region.
  • the cathode-side part of the drift zone ⁇ acts as bphasen ⁇ giger resistance also increases with increasing temperature and in a sense in series with the PN junction, and Thus, the diode between the emitter layer and the drift zone is ⁇ assigned .
  • the resistance in the second drift zone layer increases with increasing temperature, as a result of which, with a constant forward voltage, the current flowing through this layer decreases in the same way. In this way, the negative temperature coefficient be counteracted at constant diode current the initially be signed ⁇ problem.
  • advantageously PN power diodes can be provided which, similarly to silicon, have a positive total temperature coefficient or at least only a slightly negative temperature coefficient.
  • the intermediate layer is arranged inside the drift region so that the dipolar modulation of the drift region is preferably not, or at least ver ⁇ affected negligibly low in the forward operation of the PN-power diode and in that the barrier properties of the PN power diode is not the same time, as possible applies or at least only slightly impaired.
  • a single, laterally through the entire drift zone continuous intermediate layer is provided. This layer between ⁇ thus separates the drift region in the first and second drift zone layer which are thus spaced apart by the intermediate layer.
  • the intermediate layer is formed as a laterally through the entire drift zone continuous, grid-shaped layer ⁇ structure.
  • the grid-shaped intermediate layer is connected here, however, the first and second drift zone layer ⁇ are not from each other by the intermediate layer ge ⁇ separated, but rather are connected to each other through the holes in the grid structures together.
  • a plurality of laterally spaced and vertically approximately approximately the same depth arranged, inseiförmigem intermediate layers in the drift zone is provided.
  • the positive overall temperature coefficient of the SiC power diode already described above can be realized more simply than with a homogeneous intermediate layer passing through the entire drift zone.
  • this structure in particular due to the heavy processability of SiC, technologically much more expensive to produce, as a continuous semiconductor structure, which is very easy to produce, for example, by epitaxial deposition.
  • By means of such internally formed intermediate layers or also by means of a git terförmigen interlayer structure can be very stable avalanche breakdowns (avalanche effect) due to Stoßioni ⁇ sations provide.
  • a buffer zone of the first conductivity type is provided.
  • This buffer zone is disposed laterally through continuously between the drift region and the semi-conductor body ⁇ .
  • this buffer zone completely separates the drift zone and the semiconductor body from each other.
  • the buffer zone has one opposite the adjacent one
  • a buffer zone is advantageous if the SiC power diode is to be designed with a so-called punch-through (PT) design, in order to prevent a space charge zone propagating from the PN junction from the heavily doped semiconductor body.
  • PT punch-through
  • NPT non-punch-through
  • Such PT and NPT designs and their functions are well known in IGBT Insulated Gate Bipolar Transistor (IGBT) devices, so we will not discuss these structures and their function.
  • the intermediate layer typically has a lower doping concentration than the semiconductor body.
  • the first drift zone layer which thus adjoins the PN junction, has a lower doping concentration than the second drift zone layer.
  • the second drift zone layer has a doping concentration in the range of 5% to 40%, in particular in the range of 10% to 20%, higher than the first drift zone layer located above it.
  • both drift zone layers within the drift zone had the same doping concentration. point. Technologically, however, this is very difficult to implement, since in the case of an epitaxially grown on the second drift zone layer intermediate layer otherwise set the same process parameters, the applied first drift zone layer usually has a slightly different Do ⁇ t istskonzentration.
  • the anode zone has a very high doping concentration in the range between 1 ⁇ 10 18 cm -3 and 1 ⁇ 10 22 cm -3 .
  • the Dotie ⁇ tion of the anode zone between 1 * 1019 cm “3 and 1 * 1021 cm" 3.
  • Ration the use of an anode zone with very high Dot istskonzent ⁇ firstly has the advantage that a ⁇ ho he emitter efficiency can be realized.
  • a better electrical contacting of an ano ⁇ denmetallmaschine can be ensured in this way, which always involves a difficulty in SiC in contrast to silicon.
  • Intermediate layers each have a doping concentration ranging between l * 1018cm "3 and l * 1020cm" 3.
  • the doping concentration of these intermediate layers is preferably in the range 1 * 1019 cm -3 and 5 * 1019 cm -3 .
  • a continuous intermediate layer or the multiplicity of intermediate intermediate layers thus has a significantly higher doping concentration than the surrounding drift zone layers.
  • its doping concentration is typically greater by one to two orders of magnitude than that of the drift zone, and in the case of a large number of self-shaped intermediate layers, its doping concentration is greater than that of the adjacent drift zone layers by about one to three orders of magnitude.
  • the at least one intermediate layer has a layer thickness in the range from 0.1 ⁇ m to 20 ⁇ m and in particular in the range from 1 ⁇ m to 5 ⁇ m. All ⁇ in common is given to that in the case of a continuous intermediate layer whose thickness is thicker than in the case of inseiförmigen or grid-shaped intermediate layers. The latter typically have a layer thickness of less than 1 ⁇ m, while in the former case a single, continuous intermediate layer has at least a few ⁇ m of layer thickness.
  • the at least one intermediate layer disposed in the lower half of the drift zone and preferential ⁇ as related in the lower third of the drift region to a PN junction of the power diode is an optimization that is typically determined by Simulati ⁇ on.
  • the layer thickness as well as ⁇ doping concentration is typically determined by simu- lation.
  • the semiconductor body has a back surface and a front surface.
  • the back surface is a large area with a functioning as a cathode terminal cathode metallization electrically, that is ohmic contacted.
  • the front upper ⁇ surface is formed by the emitter region and isassiflä ⁇ chig capitalization with a functioning as anode terminal anode metal ⁇ electrically contacted.
  • nickel compounds such as Ni ⁇ ckel-aluminum alloys are suitable. Conceivable, however, would be other alloys, such as on the basis of Wolf ⁇ ram, titanium, tantalum, suicides and the like.
  • Fig. Ia an idealized current / voltage characteristic in
  • Fig. 3 is a partial section of a second principalsbei ⁇ play of a SiC power diode according to the invention
  • 4 shows a partial section of a thirdheldsbei ⁇ game of a SiC power diode according to the invention
  • Fig. 4a is a plan view of the interlayer of the SiC power diode of Fig. 4 showing its structure
  • FIG. 4b shows a further plan view of the intermediate layer of the SiC power diode from FIG. 4 for illustrating the structure thereof ;
  • FIG. 3 is a partial section of a secondmonysbei ⁇ play of a SiC power diode according to the invention
  • 4 shows a partial section of a thirdheldsbei ⁇ game of a SiC power diode according to the invention
  • Fig. 4a is a plan view of the interlayer of the SiC power diode of Fig. 4 showing its structure
  • FIG. 4b shows a further plan view of the intermediate layer of the SiC power diode from FIG.
  • Fig. 5 is a current / voltage characteristic a in the passage ⁇ operation operated according to the invention SiC-performance-diode according to the Figures 2 and 3.
  • FIG. 6 shows a circuit arrangement of a power component with a plurality of inventive SiC power diodes.
  • SiC refers to all important crystal polytypes of silicon carbide and in particular ⁇ special to 6H, 4H, 2H, 3C and 15R polytypes.
  • SiC-based PN power diodes and bipolar power diodes are meant, even if only of power diodes or SiC power diodes is mentioned.
  • the introduced dopant very often does not match the pre-see for current flow ⁇ NEN, so-called electrically active doping. By doping, the doping introduced into the respective semiconductor body is always to be understood here.
  • FIG. 2 shows a partial section of a SiC power diode according to the invention.
  • Fig. 2a the doping ratios of the various regions and layers shows the power diode of FIG. 2, where x is the abscissa represents the depth of the SiC Leis ⁇ tung diode of the anode-side front side in a linear form, and the ordinate represents the impurity concentration ND in logarithmic form in the unit cm "3 is shown.
  • the power diode designated by reference numeral 10 includes a SiC semiconductor body 11 and a SiC substrate, respectively.
  • the SiC semiconductor ⁇ conductor body 11 has a front surface 12 and a back surface. 13
  • the buffer layer 14 is applied to the SiC semiconductor body 11.
  • the buffer layer 14 has a lower doping concentration than the semiconductor body 11.
  • the buffer layer 14 provides a slightest ⁇ tet PT design of the power diode 10 and is intended to prevent a space charge region of a PN junction in the semi-conductor body ⁇ 11 extends.
  • the doping concentration of the drift region 15 is typically one to two orders of magnitude lower than that of the buffer zone 14.
  • a heavily P-doped emitter region 16 is applied on the drift zone 15.
  • An interface between the drift zone 15 and the emitter zone 16 thus defines a PN junction 17 of the power diode 10, from which a Jardinla ⁇ tion zone in the drift zone 15 on the one hand and the emitter zone 16 on the other hand can spread in the blocking mode.
  • the thus formed SiC power diode has a front side For ⁇ term surface 18 which forms the surface of the emitter region 16, and a rear surface 13, the identical ⁇ is table with the back surface 13 of the semiconductor body 11.
  • On the back surface 13 isinflä ⁇ chig a cathode metallization 19 applied, which is connected to egg ⁇ nem cathode terminal K.
  • Suitable materials are dependent concentrations (ie, N or P) as well as their Dot michskon ⁇ of the doping type of the corresponding adjacent semiconductor layer in each case used, with nickel alloys and particularly nickel-aluminum alloys (NixAly) have found to be especially upstream part way out. Also particularly advantageous is ⁇ way when the respective underlying the metallization 19, 20 semiconductor layer 11, 16 as high as possible Do ⁇ t istskonzentration for ensuring comprises an ohmic contact with the lowest possible contact resistance.
  • a thin intermediate layer 21 is now arranged within the drift zone 15.
  • the intermediate layer 21 is heavily doped N-ei and has ⁇ ne at least about one to three orders of magnitude higher doping concentration than the surrounding regions on the drift region 15 °.
  • the intermediate layer 21 is formed as a single layer passing laterally through the entire drift zone 15, so that it divides the drift zone 15 into a first anode-side drift zone sub-layer 22 and a second cathode-side drift zone sub-layer 23 which penetrate one another the intermediate layer 21 are spaced apart.
  • the two drift zone sub-layers 22, 23 have in the present embodiment as a similar doping concentration, wherein the cathode-side drift region sub-layer example 23 has typical ⁇ a in the range of 5 to 40% higher doping concentration than the anode-side drift region sub-layer 22 (see Fig. 2a).
  • the buffer will be layer 14, the second drift zone sub-layer 23, the interim ⁇ rule layer 21, the first drift zone sub-layer 22 and the emitter layer 16 sequentially grown epitaxially on the semiconductor body.
  • the doping of these layers 14, 16, 21-23 takes place during the epitaxy by admixing the corresponding desired dopants in the corresponding ge ⁇ desired dose.
  • dopants for the N-doping of the layers 14, 21, 22, 23 is preferably nitrogen or phosphorus.
  • the individual layers can also be doped by ion implantation. However, after the ion implantation, a high-temperature treatment must be performed to heal crystal damage and to electrically activate the introduced dopant atoms.
  • FIG. 3 shows a partial section of a secondspecsbei ⁇ game of a SiC power diode according to the invention.
  • the Leis ⁇ contains tung diode 10 here no buffer layer 14, so that an NPT design is implemented here.
  • the drift zone 15 is thus applied directly to the semiconductor body 11.
  • Fig. 4 shows a partial section of a third,sbei ⁇ game of a SiC power diode according to the invention.
  • the interim ⁇ rule layer 21 is not formed as laterally through the entire drift region 15 continuous layer so that thereby the at ⁇ the drift zone sub-layers 22, 23 adjacent in the regions between two intermediate zones 21 each are connected.
  • the intermediate layer 21 in FIG. 4 plots ⁇ additionally different layouts are possible, which will be explained with reference to the layout views in Figs. 4a and 4b short.
  • a lattice-shaped coherent intermediate layer 21 is shown along the straight line AA (from FIG. 4).
  • This intermediate layer 21 has the layout more or less square holes 24, for de ⁇ NEN the two drift zone sub-layers 22, 23 are connected directly to each other.
  • a plurality is provided inselför- miger intermediate layers 21 (straight AA) have a square shape in the layout and which are laterally separated vonein ⁇ other. These various interlayer inserts 21 are arranged vertically approximately at the same depth. In the regions between the intermediate layers 21, the drift zone sublayers 22, 23 are connected directly to one another.
  • FIGS. 4a, 4b only square structures for the holes 24 (FIG. 4a) and the intermediate islands 21 (FIG. 4b) were selected by way of example. It goes without saying that here also any other contour of these structures 21, 24 can be selected, for example, a round, oval, triangular, rectangular, hexagonal, etc. contour can be selected. Also, these structures 21, 24 need not have the same contours.
  • the intermediate layer 21 is produced here by ei ⁇ ne masked ion implantation. Following the ion implantation, a high-temperature treatment would then have to be carried out-after removal of the applied mask-to heal crystal damage and to electrically activate the introduced dopant atoms.
  • the intermediate layer 21 is applied by epitaxy.
  • a masking would first have to be applied to the second drift zone sub-layer 23. After the epitaxial growth of the intermediate layer (s) 21, this mask would also have to be removed again. However, depending on the thickness of the intermediate layer (s) and the thickness of the first drift zone layer 22, the first drift zone layer 22 would then have more or less strong waves or steps on the surface.
  • FIGS. 2-4 show the qualitative characteristics of a power diode according to the invention corresponding to FIGS. 2-4 as a function of the temperature. It can be seen that by inserting highly doped intermediate layers 21 within the drift zone 15 and a suitable choice of their doping concentrations and the thickness D2 of the intermediate layer 21 and their arrangement within the drift zone 15, a positive temperature coefficient can be realized such that when injected current I the forward voltage UF in forward operation with increasing temperature T also increases.
  • FIG. 6 shows a preferred circuit application of the power diode according to the invention.
  • Fig. 6 shows a scarf ⁇ processing arrangement 25, for example a power electronic assembly comprising a plurality of power diodes 10 according to the invention. These power diodes 10 are with respect to their current-carrying paths are arranged parallel to one another and connected between a common anode terminal A and a common cathode terminal K.
  • any of a variety inventions dung according to power diodes 10 may be connected in parallel without the risk that here - beispielswei ⁇ se due to a negative temperature coefficient - at least one of these power diode a higher current than the Remains leads and this would lead to an undesirable heating of this power diode and in consequence to the failure of this power diode.
  • Such power rectifier are therefore designed to receive a diode tung by the structure of Lei ⁇ conditional high blocking voltage and to guide the same a very high current to ⁇ .
  • These Regenungsan- orders are particularly suitable for high-power converters, high-power rectifier, high-power switch and the like.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne une diode de puissance SiC-PN verticale intégrée comprenant un corps semi-conducteur SiC fortement dopé d'un premier type de conductivité, qui comporte une zone de dérive faiblement dopée du premier type de conductivité laquelle est disposée sur le corps semi-conducteur côté émetteur, une zone d'émission d'un deuxième type de conductivité laquelle est disposée sur la zone de dérive, et au moins une couche intermédiaire mince du premier type de conductivité laquelle est disposée dans la zone de dérive, présente une concentration de dopage supérieure à celle de la zone de dérive, et divise cette zone de dérive en au moins une première couche de zone de dérive côté anode, et en au moins une deuxième couche de zone de dérive côté cathode. La présente invention se rapporte en outre à un circuit comportant ce type de diodes de puissance SiC-PN.
EP06793619A 2005-09-29 2006-09-19 Diode de puissance sic-pn Withdrawn EP1946377A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005046707A DE102005046707B3 (de) 2005-09-29 2005-09-29 SiC-PN-Leistungsdiode
PCT/EP2006/066482 WO2007036456A2 (fr) 2005-09-29 2006-09-19 Diode de puissance sic-pn

Publications (1)

Publication Number Publication Date
EP1946377A2 true EP1946377A2 (fr) 2008-07-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP06793619A Withdrawn EP1946377A2 (fr) 2005-09-29 2006-09-19 Diode de puissance sic-pn

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US (1) US7646026B2 (fr)
EP (1) EP1946377A2 (fr)
KR (1) KR20080070638A (fr)
DE (1) DE102005046707B3 (fr)
WO (1) WO2007036456A2 (fr)

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US7646026B2 (en) 2010-01-12
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WO2007036456A3 (fr) 2007-06-21
US20080217627A1 (en) 2008-09-11

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