EP1928799A1 - Substrat transparent muni d'une electrode - Google Patents

Substrat transparent muni d'une electrode

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Publication number
EP1928799A1
EP1928799A1 EP06831192A EP06831192A EP1928799A1 EP 1928799 A1 EP1928799 A1 EP 1928799A1 EP 06831192 A EP06831192 A EP 06831192A EP 06831192 A EP06831192 A EP 06831192A EP 1928799 A1 EP1928799 A1 EP 1928799A1
Authority
EP
European Patent Office
Prior art keywords
layer
substrate according
electrode
oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06831192A
Other languages
German (de)
English (en)
French (fr)
Inventor
David Le Bellac
Bertrand Kuhn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Publication of EP1928799A1 publication Critical patent/EP1928799A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/007Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • C03C17/2453Coating containing SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3435Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/211SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/216ZnO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/24Doped oxides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/24Doped oxides
    • C03C2217/241Doped oxides with halides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/40Coatings comprising at least one inhomogeneous layer
    • C03C2217/43Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
    • C03C2217/44Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the composition of the continuous phase
    • C03C2217/45Inorganic continuous phases
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/40Coatings comprising at least one inhomogeneous layer
    • C03C2217/43Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
    • C03C2217/46Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
    • C03C2217/47Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
    • C03C2217/475Inorganic materials
    • C03C2217/477Titanium oxide
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/152Deposition methods from the vapour phase by cvd
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the invention relates to a transparent substrate, in particular glass, which is provided with an electrode.
  • This conductive substrate is particularly intended to be part of solar cells.
  • TCO Transparent Conductive Oxide
  • SnO 2 : F is deposited by CVD and ZnO: Al is deposited by magnetron sputtering. The latter requires a post-treatment acid attack to make it rough, while the SnO 2 : F is naturally rough after deposition.
  • This roughness makes it possible to generate a "light-trapping" or light-capture effect in order to increase the absorption of light by the silicon which constitutes the active part of the solar cell.
  • This parameter is one of the performance criteria of a TCO layer vis-à-vis this light-trapping effect, this criterion being characterized by the intensity of the blur (or veil) obtained.
  • EP 1422761 discloses the use in the stack of an irregular underlayer SnO 2 / SiOC or SiOC or SiSnO.
  • Document EP 1056136 also discloses the use of an SnO 2 / SiO 2 sublayer on an Na-based glass substrate to generate NaCl crystal holes.
  • the production of a stacking structure with blur requires either an SiSn x OyCy sublayer or the texturing of the substrate before the deposition of the TCO layer, which induces additional manufacturing steps.
  • the document EP290345 describes a stack of TCO-type thin layers based on a SnO 2 / SnO 2: F bi-layer for which the light transmission / electrical resistance ratio is optimized.
  • the object of the invention is to obtain a substrate provided with an electrode, intended for solar cells, which is of a simpler and / or less expensive fabrication than the known electrodes, and whose performances at the same time in terms of the product fuzzy by the light transmission, and the light transmission / electrical resistance ratio, the blur / electrical resistance ratio, and blur are improved concomitantly.
  • the invention firstly relates to a transparent substrate, in particular glass, associated with an electrode, in particular adapted for solar cells, characterized in that the electrode comprises a first transparent electroconductive layer composed of a non-mineral oxide. doped, said first layer being coated by a second transparent electroconductive layer composed of the same inorganic oxide, said inorganic oxide being however doped.
  • the term "layer” is understood to be either a continuous layer or a discontinuous layer, in particular having patterns (either by etching a continuous layer or by depositing directly from the discontinuous layer to the desired pattern, by a mask system for example). This applies to all layers in this application.
  • the electrode has a blur of between 5% and 25% and preferably between 10 and 20%,
  • the electrode has a fuzzy product factor (H) by the light transmission (TL) expressed in a graph H (TL) which is above a line defined by the following bi-points (15; 82); (10; 84);
  • the electrode has a luminous absorption product by the electrical surface resistance of less than 0.6 ⁇ / square; the electrode has a resistance per square (R squared) less than or equal to 15 ⁇ / square, in particular less than or equal to 12; ⁇ / square, preferably less than or equal to 10 or 12 ⁇ / square.
  • the thickness of the first undoped mineral oxide layer is between 150 and 900 nm; the first layer is based on tin oxide (SnO 2) and the second layer is based on fluorinated tin (SnO 2: F),
  • the electrode is deposited on an underlayer having alkaline barrier properties of nitride or silicon oxynitride, aluminum nitride or oxynitride, silicon oxide or oxycarbide, with a thickness of between 20 and 150 nm,
  • the barrier sublayer comprises alternating layers with a high refractive index between 1.9 and 2.3 and layers with a low refractive index of between 1.4 and 1.7, in particular according to the sequences SisN4 / SiO2 or Si3N4 / SiO2 / SisN4.
  • the first layer is based on zinc oxide (ZnO) and the second layer is based on zinc oxide doped with aluminum (ZnO: Al),
  • the doped and / or undoped tin oxide is (are) deposited at high temperature, especially at a temperature greater than 600 ° C., Use of the substrate as previously described as an Si or CdTe-based photovoltaic cell electrode,
  • the substrate is an extra-clear glass of the "Albarino" and / or “Diamond” type -one of the faces of the substrate is coated with a stack providing a function of the anti-reflective or hydrophobic or photocatalytic type;
  • FIGS. 1 and 2 illustrate points of comparison between a single-layer stacking structure and two-layer layouts.
  • SnO2 F on the one hand
  • SnO 2 / SnO 2 F on the other.
  • the partially coated substrate is then heated again and brought into contact with a fluorinated tin compound or a tin compound and a fluorinated compound to obtain the second SnO 2 : F layer.
  • the chemical vapor deposition method by which a vapor of tin compounds is used is used. and an oxidizing gas in contact with a high temperature transparent substrate, or the spraying method by which a solution of the tin compound is sprayed onto the transparent substrate at high temperature using a sprayer.
  • the CVD method is preferably used by which a vapor mixture of tin compounds, oxidizing gas, etc. is contacted with the transparent substrate heated to a temperature of 400 to 700 ° C., preferably in the vicinity of the temperature range of between 600 and 680 ° C.
  • a transparent electroconductive film with two layers is deposited, that is to say, a SnO 2 layer and then another SnO 2: F layer, deposited in overlap.
  • the thickness of the two-layer SnO 2 / SnO 2: F film is from 0.6 to 1.5 microns.
  • the first series of deposits comprises a single layer of SnO 2: F, deposited at high temperature (at least greater than 600 ° C.) by CVD, by decomposition of precursors based on those mentioned above + air + H 2 O + a fluorinated compound .
  • the first example below shows the difference between a conventional layer of SnO 2: F deposited at high temperature T1 (greater than 600 ° C.) and the same layer produced without doping.
  • the second example below shows the effect of temperature on blur generation.
  • the conventional layer has been carried out at a temperature T2 greater than at least 30 ° C. to T1.
  • the blur value is almost doubled from T1 to T2.
  • the third example shows the relationship between the dopant flow and the blur for a thick layer deposited at high temperature (greater than 600 ° C.)
  • doping decreases TL.
  • the fact of not doping the layer increases the blur.
  • the temperature also has the effect of increasing the blur.
  • the SnO 2 sublayer is used to create the favorable conditions for blur.
  • the SnO 2 sublayer promotes high light transmission.
  • the SnO2: F overlay is present to adjust the square resistance of the TCO.
  • At least one dielectric layer is deposited on the substrate by cathodic sputtering, in particular assisted by a magnetic field and preferably reactive in the presence of oxygen and / or nitrogen, in an enclosure.
  • the ZnO layer is obtained from a cathode of a doped metal, ie containing a minority element: by way of illustration, it is common to use zinc cathodes containing a minor proportion of another metal such as aluminum or gallium.
  • a ZnO overlay may be deposited by a magnetron sputtering route on the SnO 2 / SnO 2: F overlay, this overcoating being a protective layer against hydrogenated plasma attacks and having a thickness of between 10 and 50. nm and preferably close to 20 nm.
  • Thin layers are thus deposited on the surface to give them a particular property, for example that which consists in allowing the substrate to remain as clean as possible, whatever the environmental aggressions, that is to say aimed at permanence in time of appearance and surface properties, and allowing in particular to space the cleanings, by succeeding in gradually eliminating the stains settling progressively on the surface of the substrate, in particular the soils of organic origin as the traces of fingers or volatile organic products present in the atmosphere , or even soot type dirt, pollution dust.
  • photocatalytic coatings on substrate, which have a marked "antifouling" effect and that can be manufactured industrially.
  • These photo-catalytic coatings generally comprise at least partially crystallized titanium oxide, incorporated in said coating in the form of particles, in particular of size ranging from a few nanometers (3 or 4) to 100 nm, preferably around 50 nm for the essential crystallized form anatase or anatase / rutile.
  • Titanium oxide is in fact part of the semiconductors which, under the action of light in the visible range or ultraviolet, degrade organic products which are deposited on their surface.
  • the photo-catalytically active coating results from a solution based on TiO 2 nanoparticles and a mesoporous silica (SiO 2) binder.
  • the photo-catalytically active coating results from a solution based on TiO 2 nanoparticles and an unstructured silica (SiO 2) binder.
  • SiO 2 unstructured silica
  • the choice was furthermore made on titanium oxide which is at least partially crystallized because it has been shown to be much better in terms of photo-catalytic property than amorphous titanium oxide.
  • it is crystallized in anatase form, in rutile form or in the form of a mixture of anatase and rutile.
  • the coating is produced in such a way that the crystallized titanium oxide it contains is in the form of "crystallites", that is to say single crystals, having an average size of between 0.5 and 100 nm, preferably 3 to 60 nm. It is indeed in this size range that titanium oxide appears to have an optimal photo-catalytic effect, probably because the crystallites of this size develop a large active surface.
  • the photocatalytically active coating may also comprise, in addition to titanium oxide, at least one other type of mineral material, especially in the form of an amorphous or partially crystalline oxide, for example silicon oxide (or a mixture of oxides), titanium, tin, zirconium or aluminum.
  • This mineral material can also participate in the photo-catalytic effect of the crystallized titanium oxide, itself having a certain photo-catalytic effect, even small compared to that of the crystallized TIO2, which is the case of the amorphous or partially crystalline titanium oxide.
  • This doping can also be done by surface doping only of the titanium oxide or of the whole coating, surface doping carried out by covering at least a portion of the coating with a layer of oxides or metal salts, the metal being selected from iron, copper, ruthenium, cerium, molybdenum, vanadium and bismuth.
  • the photo-catalytic phenomenon can be amplified by increasing the yield and / or kinetics of the photo-catalytic reactions by covering the titanium oxide or at least a part of the coating which incorporates it with a noble metal in the form of a thin layer of the platinum, rhodium, silver type.
  • the coating with photocatalytic property also has an outer surface of hydrophilic and / or oleophilic pronounced, especially in the case where the binder is inorganic, which brings two significant advantages: a hydrophilic character allows a perfect wetting of water which can be deposited on the coating, thus facilitating cleaning.
  • hydrophilic character can also have an oleophilic character, allowing the "wetting" of organic soils which, as for water, then tend to deposit on the coating in the form of a continuous film less visible than " spots
  • the thickness of the coating is variable, it is between a few nanometers and a few microns, typically included
  • the choice of the thickness may depend on various parameters, in particular the envisaged application of the substrate, or on the size of the TiO 2 crystallites in the coating.
  • the coating may also be chosen with a more or less smooth surface: a low surface roughness may indeed be advantageous if it makes it possible to develop a larger active photo-catalytic surface.
  • the functionality that is reported on the other side of the substrate may be constituted by an anti-reflection coating thus maximizing the energy conversion efficiency.
  • - Ni and / or n3 are between 2.00 and 2.30, in particular between 2, 15 and 2.25, and preferably close to 2.20.
  • - n2 and / or ⁇ .4 are between 1.35 and 1.65.
  • ei is between 5 and 50 nm, in particular between 10 and 30 nm, or between 15 and 25 nm.
  • - ⁇ 2 is between 5 and 50 nm, especially less than or equal to 35 nm or 30 nm, in particular between 10 and 35 nm.
  • e3 is between 40 and 180 nm and preferably between 45 and 150 nm.
  • e 4 is between 45 and 110 nm and preferably between 70 and 105 nm.
  • the most suitable materials for forming the first and / or third layer of the stack A which is of anti-reflective type, those with a high index, are based on mixed nitride of silicon and zirconium or a mixture of these nitrides. mixed.
  • these high index layers are based on mixed nitrides of silicon and tantalum or a mixture thereof. All these materials may be optionally doped to improve their chemical and / or mechanical and / or electrical resistance properties.
  • the most suitable materials for constituting the second and / or fourth layer of the stack A are based on silicon oxide, oxynitride and / or silicon oxycarbide or based on a mixed oxide of silicon and aluminum.
  • a mixed oxide tends to have a better durability, especially chemical, than pure SiO 2 (an example is given in patent EP-791 562).
  • the respective proportion of the two oxides can be adjusted to achieve the expected improvement in durability without greatly increasing the refractive index of the layer.
  • a preferred embodiment of this antireflection stack is of the substrate / Si3N4 / SiO2 / SisN4 / SiO2 form, it being understood that the choice of the different thicknesses and in particular at the level of the thicknesses of the third and fourth layers is optimized so that the transmission light is located in most of the spectrum (ie in the visible and in the infrared).

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  • Condensed Matter Physics & Semiconductors (AREA)
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EP06831192A 2005-09-23 2006-09-19 Substrat transparent muni d'une electrode Withdrawn EP1928799A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0552850A FR2891269B1 (fr) 2005-09-23 2005-09-23 Substrat transparent muni d'une electrode
PCT/FR2006/050903 WO2007034110A1 (fr) 2005-09-23 2006-09-19 Substrat transparent muni d'une electrode

Publications (1)

Publication Number Publication Date
EP1928799A1 true EP1928799A1 (fr) 2008-06-11

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Country Link
US (1) US8187714B2 (pt)
EP (1) EP1928799A1 (pt)
JP (1) JP2009509350A (pt)
KR (1) KR20080046671A (pt)
CN (1) CN101268025A (pt)
BR (1) BRPI0616268A2 (pt)
FR (1) FR2891269B1 (pt)
WO (1) WO2007034110A1 (pt)

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US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
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FR2891269A1 (fr) 2007-03-30
KR20080046671A (ko) 2008-05-27
US8187714B2 (en) 2012-05-29
US20080314442A1 (en) 2008-12-25
FR2891269B1 (fr) 2007-11-09
JP2009509350A (ja) 2009-03-05
WO2007034110A1 (fr) 2007-03-29
BRPI0616268A2 (pt) 2011-06-14
CN101268025A (zh) 2008-09-17

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