EP1919046A3 - Dispositif de réseau semi-conducteur à émission par la surface, module, dispositif de source lumineuse, appareil de traitement de données, dispositif de transmission de lumière, appareil de transmission de lumière spatiale, et système de transmission de lumière spatiale - Google Patents

Dispositif de réseau semi-conducteur à émission par la surface, module, dispositif de source lumineuse, appareil de traitement de données, dispositif de transmission de lumière, appareil de transmission de lumière spatiale, et système de transmission de lumière spatiale Download PDF

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Publication number
EP1919046A3
EP1919046A3 EP07105126A EP07105126A EP1919046A3 EP 1919046 A3 EP1919046 A3 EP 1919046A3 EP 07105126 A EP07105126 A EP 07105126A EP 07105126 A EP07105126 A EP 07105126A EP 1919046 A3 EP1919046 A3 EP 1919046A3
Authority
EP
European Patent Office
Prior art keywords
light
spatial
transmitting
tansmitting
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07105126A
Other languages
German (de)
English (en)
Other versions
EP1919046B1 (fr
EP1919046A2 (fr
Inventor
Nobuaki Ueki
Yasuaki Miyamoto
Jun Sakurai
Terutaka Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Publication of EP1919046A2 publication Critical patent/EP1919046A2/fr
Publication of EP1919046A3 publication Critical patent/EP1919046A3/fr
Application granted granted Critical
Publication of EP1919046B1 publication Critical patent/EP1919046B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
EP07105126A 2006-09-28 2007-03-28 Dispositif de réseau semi-conducteur à émission par la surface, module, dispositif de source lumineuse, appareil de traitement de données, dispositif de transmission de lumière, appareil de transmission de lumière spatiale, et système de transmission de lumière spatiale Expired - Fee Related EP1919046B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006264958A JP4935278B2 (ja) 2006-09-28 2006-09-28 表面発光型半導体アレイ素子、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置、および光空間伝送システム

Publications (3)

Publication Number Publication Date
EP1919046A2 EP1919046A2 (fr) 2008-05-07
EP1919046A3 true EP1919046A3 (fr) 2011-01-05
EP1919046B1 EP1919046B1 (fr) 2012-05-16

Family

ID=39183135

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07105126A Expired - Fee Related EP1919046B1 (fr) 2006-09-28 2007-03-28 Dispositif de réseau semi-conducteur à émission par la surface, module, dispositif de source lumineuse, appareil de traitement de données, dispositif de transmission de lumière, appareil de transmission de lumière spatiale, et système de transmission de lumière spatiale

Country Status (4)

Country Link
US (1) US7672352B2 (fr)
EP (1) EP1919046B1 (fr)
JP (1) JP4935278B2 (fr)
CN (1) CN101154792B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135596A (ja) * 2006-11-29 2008-06-12 Ricoh Co Ltd 半導体レーザアレイ製造方法、面発光型半導体レーザアレイ、光源ユニット、光走査装置、画像形成装置、光伝送モジュール及び光伝送システム
JP5504784B2 (ja) * 2009-03-18 2014-05-28 株式会社リコー 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置
JP2011035017A (ja) * 2009-07-30 2011-02-17 Hitachi Cable Ltd 発光素子
JP5721055B2 (ja) * 2010-06-11 2015-05-20 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
JP5721501B2 (ja) * 2011-03-31 2015-05-20 京セラ株式会社 半導体装置および半導体装置の製造方法
CN102903801B (zh) * 2011-07-28 2015-06-10 上海博恩世通光电股份有限公司 具有粘附性电流阻挡层的led芯片及其制作方法
CN102903802B (zh) * 2011-07-28 2015-09-16 上海博恩世通光电股份有限公司 具有dbr型电流阻挡层的led芯片及其制作方法
JP6020560B2 (ja) 2012-05-25 2016-11-02 株式会社村田製作所 垂直共振面発光レーザ素子の実装方法、垂直共振面発光レーザアレイ素子の実装方法、垂直共振面発光レーザ素子、垂直共振面発光レーザアレイ素子
WO2015033633A1 (fr) * 2013-09-03 2015-03-12 株式会社村田製作所 Élément laser émettant en surface à cavité verticale (vcsel), plaquette semi-conductrice et module électroluminescent comportant un élément laser émettant en surface à cavité verticale et procédé de fabrication d'un élément laser émettant en surface à cavité verticale
JP2015088548A (ja) * 2013-10-29 2015-05-07 株式会社リコー 面発光レーザアレイ
JP6303481B2 (ja) * 2013-12-20 2018-04-04 セイコーエプソン株式会社 発光素子モジュール、量子干渉装置、原子発振器、電子機器および移動体
JP6004063B1 (ja) * 2015-09-09 2016-10-05 富士ゼロックス株式会社 面発光型半導体レーザ素子の製造方法
JP2018026478A (ja) * 2016-08-10 2018-02-15 富士ゼロックス株式会社 発光素子、発光素子アレイ、及び光伝送装置
JP6380512B2 (ja) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 発光素子アレイ、および光伝送装置
WO2018153744A1 (fr) * 2017-02-21 2018-08-30 Lumileds Holding B.V. Réseau de sources lumineuses comprenant de multiples vcsel
US10535799B2 (en) * 2017-05-09 2020-01-14 Epistar Corporation Semiconductor device
CN108717942B (zh) * 2018-05-31 2021-11-19 京东方科技集团股份有限公司 Oled基板及其制作方法、显示装置
CN108879325B (zh) * 2018-07-05 2020-07-31 扬州乾照光电有限公司 一种vcsel阵列芯片及制作方法
US20210408768A1 (en) * 2018-09-25 2021-12-30 Shenzhen Raysees Technology Co., Ltd. Vertical Cavity Surface Emitting Laser (VCSEL) Array and Manufacturing Method
US11655968B2 (en) * 2020-09-24 2023-05-23 Koito Manufacturing Co., Ltd. Light-emitting module
CN115117735A (zh) * 2021-03-17 2022-09-27 上海禾赛科技有限公司 激光器、光源模组及激光雷达

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JPH05283407A (ja) * 1992-04-06 1993-10-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
US5453405A (en) * 1991-01-18 1995-09-26 Kopin Corporation Method of making light emitting diode bars and arrays
EP0905838A1 (fr) * 1997-09-30 1999-03-31 Canon Kabushiki Kaisha Dispositif optique du type surface, méthode de fabrication et dispositif d'affichage
JP2000012904A (ja) * 1998-06-19 2000-01-14 Oki Electric Ind Co Ltd Ｌｅｄアレイ
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US20020185588A1 (en) * 2000-03-27 2002-12-12 Sigurd Wagner Semitransparent optical detector on a flexible substrate and method of making
JP2003179137A (ja) * 2002-10-21 2003-06-27 Yamaha Corp 配線形成法
US20050163182A1 (en) * 2004-01-20 2005-07-28 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, and optical module

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US5325381A (en) * 1992-12-22 1994-06-28 Xerox Corporation Multiple beam diode laser output scanning system
JP2001284725A (ja) * 2000-03-31 2001-10-12 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP3966067B2 (ja) * 2002-04-26 2007-08-29 富士ゼロックス株式会社 表面発光型半導体レーザ素子およびその製造方法
JP2004087866A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体光素子、その実装体および光モジュール
JP2004221428A (ja) * 2003-01-16 2004-08-05 Toshiba Corp 光半導体素子およびその製造方法
JP2005191260A (ja) * 2003-12-25 2005-07-14 Ricoh Co Ltd 半導体レーザおよびその製造方法および光送信用モジュールおよび光通信システム
US7125733B2 (en) * 2004-01-13 2006-10-24 Infineon Technologies Ag Method for producing an optical emission module having at least two vertically emitting lasers
JP4815812B2 (ja) * 2004-02-04 2011-11-16 富士ゼロックス株式会社 垂直共振器型面発光半導体レーザ装置
JP4899344B2 (ja) * 2004-06-29 2012-03-21 富士ゼロックス株式会社 表面発光型半導体レーザおよびその製造方法
JP2006162739A (ja) * 2004-12-03 2006-06-22 Fuji Xerox Co Ltd 光走査装置
JP2006190762A (ja) * 2005-01-05 2006-07-20 Sony Corp 半導体レーザ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453405A (en) * 1991-01-18 1995-09-26 Kopin Corporation Method of making light emitting diode bars and arrays
JPH05283407A (ja) * 1992-04-06 1993-10-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
EP0905838A1 (fr) * 1997-09-30 1999-03-31 Canon Kabushiki Kaisha Dispositif optique du type surface, méthode de fabrication et dispositif d'affichage
JP2000012904A (ja) * 1998-06-19 2000-01-14 Oki Electric Ind Co Ltd Ｌｅｄアレイ
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US20020185588A1 (en) * 2000-03-27 2002-12-12 Sigurd Wagner Semitransparent optical detector on a flexible substrate and method of making
JP2003179137A (ja) * 2002-10-21 2003-06-27 Yamaha Corp 配線形成法
US20050163182A1 (en) * 2004-01-20 2005-07-28 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, and optical module

Also Published As

Publication number Publication date
US7672352B2 (en) 2010-03-02
JP4935278B2 (ja) 2012-05-23
CN101154792A (zh) 2008-04-02
EP1919046B1 (fr) 2012-05-16
CN101154792B (zh) 2010-09-01
EP1919046A2 (fr) 2008-05-07
JP2008085161A (ja) 2008-04-10
US20080080583A1 (en) 2008-04-03

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