EP1876680A1 - Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung - Google Patents

Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung Download PDF

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EP1876680A1
EP1876680A1 EP07118145A EP07118145A EP1876680A1 EP 1876680 A1 EP1876680 A1 EP 1876680A1 EP 07118145 A EP07118145 A EP 07118145A EP 07118145 A EP07118145 A EP 07118145A EP 1876680 A1 EP1876680 A1 EP 1876680A1
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quantum well
semiconductor laser
edge
emitting
laser device
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German (de)
English (en)
French (fr)
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Norbert Linder
Tony Albrecht
Johann Luft
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
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    • H01S5/00—Semiconductor lasers
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    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Definitions

  • the invention relates to an optically pumped surface emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, wherein the pump radiation source comprises an edge-emitting semiconductor structure.
  • a semiconductor laser device of the type mentioned is from the US 5,991,318 known.
  • an optical pumped vertical resonator type semiconductor laser having a monolithic surface emitting semiconductor layer structure is described.
  • the optical pump radiation whose wavelength is smaller than that of the generated laser radiation, supplied by an edge emitting semiconductor laser diode.
  • the edge emitting semiconductor laser diode is externally arranged such that the pumping radiation is irradiated obliquely from the front into the amplification area of the surface emitting semiconductor layer structure.
  • a particular problem with this known device is that the pump laser must be positioned exactly to the surface-emitting semiconductor layer structure and additionally requires an optical device for beam focusing in order to image the pump radiation exactly in the desired region of the surface-emitting semiconductor layer structure.
  • Another problem is that due to the pumping from the front only a few quantum wells can be excited by pump radiation.
  • the object of the present invention is to provide a semiconductor laser device of the type mentioned above with a simplified adjustment of pump source and surface-emitting layer structure and with high output power available. Furthermore, a technically simple method for producing such a device is to be specified.
  • the first object is achieved by an optically pumped surface emitting semiconductor laser device having the features of claim 1.
  • Advantageous embodiments and developments of the device according to the invention are the subject of the dependent claims 2 to 25.
  • Processes for producing semiconductor laser devices according to the invention are the subject matter of claims 26 and 28. Particularly preferred embodiments of these processes are the subject matter of subclaims 27 and 29.
  • the radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate.
  • the layer thicknesses of the individual semiconductor layers can be set very accurately in epitaxy, so that advantageously a high positioning accuracy of the edge-emitting semiconductor structure to the radiation-generating quantum well structure is achieved.
  • the surface-emitting quantum well structure and the pump radiation source are arranged side by side on the substrate such that a radiation-emitting region of the pump radiation source and the quantum well structure are at the same height above the substrate. It is thereby achieved that pump radiation is coupled laterally into the quantum well structure during operation of the semiconductor laser device. This means that the beam axis of the pump radiation is substantially parallel to the substrate surface and thus substantially vertical to the beam axis of the laser beam generated by the surface emitting semiconductor laser device.
  • the quantum well structure is initially "pumped" transparent from the side surfaces until finally its entire lateral cross-sectional area is laser active.
  • the lateral optical pumping also achieves uniform filling of the quantum wells with charge carriers.
  • the quantum well structure is enclosed by the edge-emitting semiconductor structure.
  • at least one profit-guided radiation-emitting active region is formed by means of at least one Strominjetationspfades on the surface of the semiconductor laser structure, which serves as a pump radiation source.
  • at least one index-guided radiation-emitting active region of the edge-emitting semiconductor structure serves as pump radiation source. This is, for example, by means of at least one current injection path on the surface of the edge-emitting semiconductor structure in conjunction with along the current injection path formed, for example, etched trenches defined in the semiconductor structure.
  • the ends of the current injection paths facing the radiation-generating quantum well structure preferably have a spacing of 10 ⁇ m-50 ⁇ m, particularly preferably approximately 30 ⁇ m, therefrom.
  • the excitation of the surface-emitting laser structure can be effected by pumping the quantum well structure or by adjacent confinement layers.
  • the pumping efficiency is preferably increased by the fact that their band gap decreases towards the quantum well structure. This can be achieved, for example, by changing the material composition.
  • internal electric fields are generated in the confinement layers, which drive the optically generated charge carriers into the active quantum well region.
  • a plurality of pump radiation sources are arranged in a star shape around the quantum well structure, so that in a short time and very homogeneously the quantum well structure is "pumped" transparent and laser active over its entire lateral cross section.
  • the interface between the edge emitting semiconductor structure and the quantum well structure is preferably at least partially reflective. As a result, a return reflection into the edge-emitting semiconductor structure results at the edge to the surface-emitting laser region, which leads to the formation of laser radiation in the pump source and thus to increased pump efficiency.
  • the end faces of the edge-emitting radiation sources facing away from the quantum well structure and lying parallel to one another are designed as mirror surfaces and serve as resonator mirrors. These may, for example, be produced by cleavage and / or etching (for example dry etching) and provided with a passivation layer and / or be mirrored in a highly reflective manner.
  • the opposed pump radiation sources are coupled in operation via the transparent pumped quantum well structure into a single coherent oscillating laser. With optimal final mirroring, all the optical power stored in the pump laser is available as pump power, except for the losses at the interfaces between the pump laser and the surface emitting laser.
  • the edge-emitting semiconductor structure has a large optical cavity (LOC) structure.
  • LOC optical cavity
  • an active layer between a first and a second waveguide layer embedded, which in turn are embedded between a first and a second cladding layer.
  • the edge-emitting semiconductor structure as a ring laser.
  • a ring laser is to be understood as a laser structure in which ring modes can form during operation.
  • the design of the associated laser resonator in ring form is, as will be explained below, advantageous, but not mandatory.
  • a ring laser can be formed by means of totally reflecting interfaces, so that advantageously no highly reflective mirrors are required. This also reduces the risk of a lower radiation yield due to damage to the mirrors. Furthermore, a ring laser is characterized by an advantageously large mode volume and high mode stability.
  • the quantum well structure to be pumped is arranged within the ring resonator, so that the entire resonator-internal radiation field is available for pumping the quantum well structure. It is particularly advantageous in this case to arrange the active layer of the edge-emitting semiconductor structure and the quantum well structure at the same height above the substrate, so that there is a large overlap between the volume of the quantum well structure to be pumped and the radiation field of the edge-emitting semiconductor structure and thus a high pumping efficiency.
  • the resonator of the ring laser is formed by an annularly closed waveguide.
  • the leadership of the pump radiation field is carried out by total reflection at the boundaries of the waveguide, so that here also advantageously no highly reflective mirrors are needed.
  • the shape of the annular closed waveguide the pump radiation field can be adapted very well to the volume of the quantum well structure to be pumped.
  • the edge-emitting semiconductor structure is surrounded in a preferred embodiment of the invention by a medium whose refractive index is less than the refractive index of the semiconductor structure. This results in the transition from the semiconductor to the optically thinner, surrounding medium a totally reflecting surface, which serves as a boundary of the laser resonator.
  • a recess filled with an optically thinner medium can be arranged within the edge-emitting semiconductor structure.
  • the edge-emitting semiconductor structure may also be surrounded by another material such as, for example, a semiconductor material, a semiconductor oxide or a dielectric with a lower refractive index.
  • the semiconductor structure is formed as a cylindrical stack of circular or annular semiconductor layers.
  • the thus formed cylindrical semiconductor body also represents the ring laser resonator, on the lateral surfaces of the radiation field is performed totally reflecting.
  • the semiconductor structure may also be formed prismatically as a stack of semiconductor layers in the form of polygons or polygon rings.
  • a largely homogeneous radiation distribution and, correspondingly, a substantially homogeneous pumping density in the quantum well structure can be achieved.
  • a stack of semiconductor layers of the described form can be comparatively simple, for example by etching from a previously epitaxially produced semiconductor layer sequence be formed.
  • the laser resonator of the edge emitting semiconductor structure is formed at the same time as the formation of the semiconductor body, without the need for additional reflective coatings.
  • the quantum well structure has more than 10 quantum wells. This high number of quantum wells is possible because all quantum wells are pumped directly due to the lateral coupling of the pump radiation. As a result, a high gain is advantageously achieved in the surface-emitting quantum well structure.
  • the edge-emitting semiconductor structure is preferably designed such that it generates a pump wave whose maximum lies at the level of the quantum wells above the substrate, particularly preferably at the level of the center of the quantum well structure.
  • the edge-emitting semiconductor structure is designed as a so-called multiple or microstack laser with a plurality of laser-active layer sequences (for example double heterostructures) which are connected in series via tunnel junctions.
  • the quantum well structure then advantageously has a plurality of quantum well groups, each of which is at the level of a laser-active layer sequence of the pump source.
  • a first semiconductor layer sequence with at least one quantum well structure which is suitable for a surface-emitting semiconductor laser is first applied to a substrate on a substrate. Thereafter, the first semiconductor layer sequence is removed outside the intended laser range. On the exposed after removal of the first semiconductor layer sequence In the area above the substrate, an edge-emitting second semiconductor layer sequence is subsequently deposited, which is suitable for generating and transmitting pump radiation into the quantum well structure. Subsequently, at least one current injection path is formed in the edge emitting semiconductor layer sequence.
  • a buffer layer is first applied to the substrate.
  • a first confinement layer is deposited.
  • a quantum well structure suitable for a surface emitting semiconductor laser is applied to the first confinement layer, which follows a second confinement layer.
  • a first cladding layer, a first waveguide layer, an active layer, a second waveguide layer and a second cladding layer are then applied successively to the exposed area of the buffer layer.
  • the respective layer thicknesses are designed such that the pump radiation generated in the active layer passes into the quantum well structure.
  • the radiation-emitting quantum well structure and the pump radiation source are arranged one above the other on the substrate.
  • the quantum well structure is optically coupled to the edge-emitting semiconductor structure, so that pump radiation is conducted from the pump radiation source into the quantum well structure during operation of the semiconductor laser device.
  • the edge-emitting semiconductor structure preferably has a first waveguide layer and, viewed from the substrate, this second waveguide layer, between which an active layer is arranged.
  • the quantum well structure is epitaxial on the second waveguide layer grown, covers only a portion of the edge-emitting semiconductor structure and is optically coupled to this.
  • the interface between the second waveguide layer and the adjacent cladding layer in the vicinity of the surface emitting laser region is bent or kinked towards the quantum well structure.
  • the refractive index of the second waveguide layer is advantageously greater than the refractive index of the first waveguide layer and / or the active layer is asymmetrically placed in the waveguide formed by the two waveguide layers.
  • one or more gain-guided and / or index-guided radiation-emitting active regions are preferably formed as pump radiation sources analogously to the first embodiment described above.
  • an edge emitting semiconductor layer sequence is first applied to a substrate.
  • a surface-emitting semiconductor laser layer sequence with at least one quantum well structure is then applied to these. Thereafter, the surface-emitting semiconductor laser layer sequence is removed outside the intended laser range before at least one current injection path is formed in the edge-emitting semiconductor layer sequence.
  • a buffer layer is first applied to the substrate for this purpose.
  • a first waveguide layer, an active layer and a second waveguide layer are subsequently deposited thereon.
  • a first confinement layer, a surface-emitting semiconductor laser layer sequence with a quantum well structure and a second confinement layer are then applied to the edge-emitting layer sequence produced in this way.
  • the confinement layers, the surface emitting semiconductor laser layer sequence and partially the second waveguide layer are then removed outside the intended surface emitting laser region.
  • a surface-emitting semiconductor layer sequence having at least one quantum well structure is first applied to a substrate, the layer sequence outside the intended laser range is removed, and the edge-emitting semiconductor structure of the pump radiation source is exposed on the substrate exposed thereby Applied area.
  • the outer region of the edge-emitting semiconductor structure for forming the laser resonator is removed.
  • a central subregion in the interior of the semiconductor structure is preferably also removed in order to form a ring resonator.
  • the removal of these subregions can be done, for example, by means of a dry etching process.
  • no elaborate reworking of the etched surfaces is required.
  • the method steps can also be applied in a different order.
  • an edge-emitting semiconductor structure may first be applied to the substrate, which is then removed in the intended laser range of the (still to be formed) quantum well structure.
  • the surface-emitting semiconductor layer sequence having at least one quantum well structure is applied to the exposed region.
  • the outer region of the edge-emitting semiconductor structure for forming the laser resonator is removed again.
  • the shaping of the laser resonator can also take place before the application of the surface-emitting semiconductor layer sequence.
  • a highly reflecting Bragg reflector layer sequence is formed on one side of the quantum well structure, which represents a resonator mirror of the surface emitting laser structure.
  • a further Bragg reflector layer sequence or an external mirror is arranged on the opposite side of the quantum well structure.
  • the substrate is made of a material which is permeable to the laser beam generated in the semiconductor laser device, and the highly reflecting Bragg reflector is arranged on the side of the quantum well structure facing away from the substrate. This allows a short connection between the semiconductor structures and a heat sink and thus good heat dissipation from the semiconductor structures.
  • absorber layers are arranged in the edge region and / or in etching structures of the surface-emitting semiconductor laser layer sequence.
  • the semiconductor laser device according to the invention is particularly suitable for use in an external resonator in which a frequency-selective element and / or a frequency doubler is located.
  • the semiconductor laser device according to the invention can be modulated via modulation of the pump laser by modulation of the pumping current or via short-circuiting of the surface-emitting semiconductor laser layer sequence.
  • the exemplary embodiment of FIG. 1 is, for example, an optically pumped surface-emitting semiconductor laser chip with a laser emission at 1030 nm.
  • a buffer layer 6 is applied to a substrate 1.
  • the substrate 6 is made of GaAs, for example, and the buffer layer 6 of undoped GaAs.
  • a surface-emitting semiconductor laser structure 10 having a quantum well structure 11, which represents the surface-emitting laser region 15, is applied centrally above the substrate.
  • the semiconductor laser structure 10 is composed of a first confinement layer 12 located directly on the buffer layer 6, a quantum well structure 11 arranged thereon, and a second confinement layer 13 applied to the quantum well structure 11.
  • the confinement layers 12, 13 are made of undoped GaAs
  • the quantum well structure 11 has a plurality ( ⁇ 3) of quantum wells made of undoped InGaAs whose thickness is adjusted to the emission at 1030 nm and interposed with barrier layers of GaAs ,
  • a Bragg mirror 3 having, for example, 28 to 30 periods of GaA-lAs (10% Al) / GaAlAs (90% Al) is deposited, which constitutes a highly reflective resonator mirror.
  • an edge emitting semiconductor laser structure 21 for example a known Large Optical Cavity (LOC) single quantum well (SQW) laser structure, is deposited on the buffer layer 6 for emission at approximately 1 ⁇ m.
  • This is composed, for example, of a first cladding layer 28 (eg n-GaAl 0.65 As), a first waveguide layer 23 (eg n-GaAl 0.1 As), an active layer 25 (eg an undoped InGaAs-SQW), a second Waveguide layer 24 (eg p-GaAl 0.1 As) and a second cladding layer 29 (eg p-GaAl 0.65 As).
  • LOC Large Optical Cavity
  • On the second cladding layer 29 may be applied as a cover layer 30, for example, a p + -doped GaAs layer.
  • the LOC region 22 is arranged at the same height as the quantum well region of the surface emitting laser structure 10, preferably the active layer 25 is located at the same height above the substrate 1 as the quantum well structure 11.
  • the edge-emitting semiconductor structure 21 has a plurality of active layers 25, which are connected in series by means of tunnel junctions.
  • the quantum well structure 11 has analogous thereto a plurality of quantum well groups, each of which is at the level of an active layer 25 of the edge-emitting semiconductor structure 21.
  • All semiconductor layers are produced, for example, by means of metal-organic vapor phase epitaxy (MOVPE).
  • MOVPE metal-organic vapor phase epitaxy
  • In the vicinity of the outer edge of the edge-emitting semiconductor laser structure 21 are perpendicular to the layers of the edge-emitting semiconductor laser structure 21 extending end mirror 31, ranging from the cover layer 30 at least to the first cladding layer 28, here in the buffer layer 6.
  • These are produced, for example, after the growth of the edge emitting semiconductor laser structure 21 by means of etching (eg reactive ion etching) of corresponding trenches and their subsequent filling with highly reflective material.
  • etching eg reactive ion etching
  • two mutually parallel mirrors 31 are arranged on opposite sides of the quantum well structure 11 (compare FIGS. 5 and 6).
  • the end mirrors may be fabricated in a known manner by cleaving the wafer along crystal planes. These are then necessarily not, as shown in Figure 1, arranged in the chip, but formed by the split chip side surfaces (see Figure 7).
  • An electrically insulating mask layer 7, for example a silicon nitride, an aluminum oxide or a silicon oxide layer, with which current injection paths 26 of the edge-emitting semiconductor laser structure 21 are defined is located on the free surface of the cover layer 30 and the bragg mirror 3 (see FIGS. 5 and 6).
  • a p-contact layer 32 e.g. a known contact metallization, applied.
  • six stripe arrays with fifteen stripes (4 ⁇ m stripes, 10 ⁇ m pitch) and approximately 150 ⁇ m active width arranged symmetrically in a star shape around the surface-emitting laser region 15 are selected for the pump source.
  • the ends of the current injection paths 26 facing the radiation-generating quantum well structure 11 preferably have a spacing of 10 ⁇ m-50 ⁇ m, particularly preferably of approximately 30 ⁇ m, therefrom.
  • All current injection paths 26 may be provided with a common p-contact layer 32, whereby the radiation-emitting regions of the edge-emitting structure are connected in parallel in operation.
  • a correspondingly structured p-type first contact layer 32 applied.
  • trenches produced along the current injection paths 26, for example by etching which for example extend into the second waveguide layer 24 to 0.5 .mu.m. This achieves improved waveguiding at the edges of the pumping areas.
  • the main surface 16 of the substrate 1 facing away from the semiconductor structure is, with the exception of an exit window 8 for the laser beam (indicated by the arrow 5) with an n-conducting second contact layer 9, e.g. also a known Kontakmetallmaschine provided.
  • the main surface 16 of the substrate is preferably coated in the region of the exit window 8 in order to reduce back reflections in the chip.
  • a laser resonator of the surface-emitting laser structure 10 can be formed from the Bragg mirror 3 and an external further mirror (not shown in FIG. 1) arranged on the opposite side of the substrate 1 or a further Bragg mirror arranged between the substrate 1 and the quantum well structure 11.
  • pump radiation (indicated by the arrows 2) is generated in the regions of the edge emitting semiconductor structure 21, which is the pump radiation source 20, defined by the current injection paths 26 and coupled into the quantum well structure 11 of the surface emitting laser structure 10.
  • edge-emitting 21 With sufficient back-reflection at the interface between edge-emitting 21 and surface-emitting structure 10 and suitable position of the end mirror 31, laser radiation is generated in the edge-emitting structure 21, which leads to an increased pumping efficiency.
  • the end mirrors 31 are preferably arranged relative to one another in such a way that they form a laser resonator for two mutually opposite radiation-emitting regions of the edge-emitting structure 21.
  • the two opposing radiation-emitting regions are then coupled to a single coherently oscillating laser after transparent pumping of the surface-emitting laser structure 10.
  • the entire optical power generated by the pump laser is then available as pump power, except for losses at the interface between edge-emitting 21 and surface-emitting structure 10.
  • the buffer layer 6, the first confinement layer 12, the quantum well structure 11, the second confinement layer 13 and the Bragg mirror layers 3 are first applied successively to the substrate 1, for example by means of MOVPE ( Figure 2a).
  • an etching mask 17 for example a Si nitride mask
  • an etching mask 17 is applied to the region of this layer sequence provided as the surface emitting laser region 15.
  • the Bragg mirror layers 3, the confinement layers 12 and 13, the quantum well structure 11 and partly the buffer layer 6 are removed, for example by means of etching, eg dry etching by means of Cl chemistry (FIG. 2b).
  • the first cladding layer 28, the first waveguide layer 23, the active layer 25, the second waveguide layer 24, the second cladding layer 29 and the cover layer 30 are successively applied, for example, again by means of MOVPE (FIG. 2c).
  • trenches for the end mirrors 31 are then etched into the last applied edge-emitting structure 21 (see Figure 2d), which are subsequently coated or filled with reflection-enhancing material. Furthermore, we removed the etch mask 17.
  • the trenches described above in connection with FIG. 1 for producing index-guided pump lasers are produced by means of etching.
  • the substrate 1 is preferably thinned after MOVPE, for example, to less than 100 microns or completely removed.
  • a buffer layer 6 and an edge-emitting semiconductor laser structure 21 are initially located over the entire surface of the substrate 1, wherein an active layer 25 is arranged between a first 23 and a second waveguide layer 24.
  • a surface-emitting quantum well structure 11 above the center of the substrate 1 on the second waveguide layer 24 is a surface-emitting quantum well structure 11, followed by a confinement layer 13 and a Bragg mirror layer sequence 3, grown.
  • an electrically insulating mask layer 7 which has recesses for current injection paths 26 of the edge-emitting structure 21 (see FIG.
  • a first contact layer 32 and on the opposite side of the substrate 1 is a second contact layer 9 with an exit window 8 for the laser beam (indicated by the Arrow 5) arranged.
  • trenches produced in the second waveguide layer 24 along the current injection paths 26, for example by etching may be formed (not shown in the figures). This achieves improved waveguiding at the edges of the pumping areas.
  • split flanks of the chip are provided here as the end mirror 31 of the edge-emitting structure 21.
  • pump laser radiation is generated in the edge-emitting laser structure, of which part is coupled into the overlying quantum well structure 11.
  • the active layer 25 is located asymmetrically in the waveguide formed by the two waveguide layers 23,24.
  • the refractive index of the second waveguide layer 24 may be higher than that of the first waveguide layer 23 and / or may be the second waveguide layer be pulled towards the quantum well structure 11 towards the laser region 15 (see Figure 3b).
  • the materials specified for the corresponding layers of the exemplary embodiment according to FIG. 1 can be used here by way of example.
  • a laser resonator of the surface-emitting laser structure 10 can also be formed in this embodiment from the Bragg mirror 3 and an arranged on the opposite side of the substrate 1 external further mirror (not shown in Figure 3a) or arranged between the substrate 1 and the quantum well 11 further Bragg mirror be.
  • a buffer layer 6 is first applied to the substrate 1. Subsequently, the first waveguide layer 23, the active layer 25 and the second waveguide layer 24 are grown in succession on this. Thereafter, the quantum well structure 11 is grown on the second waveguide layer 24, followed by the confinement layer 13 and the Bragg mirror layer 3 (FIG. 4a). These layers are produced for example by means of MOVPE.
  • an etching mask 17 is applied to the partial region of the grown layer sequence provided as the laser region 15 and the Bragg mirror layer 3, the confinement layer 13, the quantum well structure 11 and partly the second waveguide layer 24 are removed outside the laser region 15 by etching (FIG. 4b).
  • the electrically insulating mask layer 7 is applied to the second waveguide layer 24 applied before then the first contact layer 32 is deposited.
  • the second contact layer 9 with an exit window 8 is applied to the main surface of the substrate 1 opposite the semiconductor layer sequence (FIG. 4c).
  • the substrate 1 is preferably thinned or completely removed, for example, below 100 ⁇ m after the MOVPE.
  • the so-called disk lasers according to the invention are preferably soldered onto a heat sink with the Bragg mirror pointing downwards.
  • One electrode is on the heat sink, the second is created by bonding on the disk laser surface.
  • absorber layers 18 are arranged in the edge region and / or in etching structures of the surface-emitting semiconductor laser layer sequence 15 (compare FIGS. 8a and 8b). Suitable absorber materials for such applications are known and are therefore not explained in detail at this point.
  • FIG. 9 a shows a section through an exemplary embodiment of an optically pumped surface-emitting semiconductor device with a ring laser as pump radiation source.
  • the sequence of the individual semiconductor layers essentially corresponds to the exemplary embodiment shown in FIG.
  • the edge-emitting semiconductor structure 21 comprising the first cladding layer 28 (eg n-GaAl 0.65 As), the first waveguide layer 23 (eg n-GaAl 0.1 As), is the active Layer 25 (eg InGaAs-SQW), the second waveguide layer 24 (eg p-GaAl 0.1 As) and the second cladding layer 29 (eg p-GaAl 0.65 As), forms as a ring laser.
  • the active Layer 25 eg InGaAs-SQW
  • the second waveguide layer 24 eg p-GaAl 0.1 As
  • the second cladding layer 29 eg p-GaAl 0.65 As
  • FIG. 9b This illustrates the plan view of the semiconductor body shown in FIG. 9b.
  • the sectional view according to FIG. 9a corresponds to a vertical section along the line A-A.
  • the edge-emitting semiconductor structure 21 has an octagonal shape with fourfold rotational symmetry as well as a square central recess 38 in plan view.
  • the quantum well structure 11 to be pumped which is circular in plan view, is disposed entirely within the octagonal ring thus formed.
  • This octagon ring forms a ring resonator in the form of a totally reflective, closed waveguide.
  • this waveguide oscillate cyclically encircling ring modes, exemplified by the modes 37a, b, c, which optically pump the quantum well structure 11. Due to the total reflection on the outer surfaces, the coupling-out losses in this exemplary embodiment are extremely small, so that the entire resonator-internal radiation field is advantageously available for pumping the quantum well structure 11.
  • the ring modes 37a, 37b, and 37c are substantially equal and are uniform in width.
  • the radial direction (along the line B-B) results in a substantially homogeneous radiation field and, correspondingly, a substantially uniform pumping density in the quantum well structure 11 to be pumped.
  • the second mirror required for a laser operation of the surface-emitting semiconductor laser structure 10 is not integrated in the semiconductor body in the exemplary embodiment shown, but is provided as an external mirror (cf. also FIG. 13). Alternatively, this second mirror may also be formed in a similar manner to the mirror 3 in a manner not shown in the semiconductor body. In this case, the second mirror would, for example, be arranged within the intended laser region 15 between the buffer layer 6 and the quantum well structure 11.
  • FIG. 10 shows a plan view of a further exemplary embodiment of a semiconductor laser device according to the invention.
  • the totally reflecting waveguide is formed here as a circular ring.
  • the quantum well structure 11 to be pumped is completely disposed within the ring area.
  • a plurality of ring modes can oscillate.
  • the illustrated mode 39 shows only one possible example.
  • the quantum well structure 11 is next pumped by a variety of other modes with high efficiency.
  • the central recess 38 can be dispensed with for simplification, so that the resonator has a full circle surface as a transverse section.
  • the production cost is reduced with advantage.
  • modes can swing up through the resonator center. These modes are not totally reflected at the resonator boundary and therefore have comparatively high coupling losses, which ultimately reduce the pumping efficiency.
  • FIG. 11a shows a further exemplary embodiment of the invention, in which the quantum well structure 11 is pumped by two independent ring lasers. These are in principle constructed like the ring lasers of the first embodiment.
  • the associated waveguides 44, 45 intersect in two regions 46 a, b, wherein in the region 46 a the quantum well structure 11 to be pumped is arranged.
  • the pumping density in the quantum well structure 11 is further increased.
  • the essential pumping modes are again illustrated by way of example with reference to the modes 37a, b, c, d, e, f.
  • a largely homogeneous pumping density results here as well.
  • FIG. 11b shows an advantageous variant of the arrangement shown in FIG. 3a, which is characterized in particular by the fact that the shaping of the intersecting annular waveguides 44 and 45 is simplified.
  • the cross sections of the central recesses 40 and 41 are reduced to triangles.
  • On the central recess 42 and the side recesses 43 shown in Figure 11a is omitted.
  • the manufacturing outlay is advantageously reduced without significantly impairing the laser function.
  • a second quantum well structure 47 could also be formed in the second crossing region 46b of the two ring lasers.
  • FIG. 12 schematically shows two method steps for producing a semiconductor laser device according to the invention.
  • the method begins as already described and illustrated in FIGS. 2a, 2b and 2c with the application of the buffer layer 6, the first confinement layer 12, the quantum well structure 11, the second confinement layer 13 and the Bragg mirror layers 3 to a substrate 1, for example by means of MOVPE. Thereafter, an etching mask 17 is applied to the region of this layer sequence provided as the surface emitting laser region 15 and the stack is made Bragg mirror layers 3, confinement layers 12 and 13, quantum well structure 11 and parts of the buffer layer 6 outside the intended surface emitting laser region 15 is removed.
  • the first cladding layer 28, the first waveguide layer 23, the active layer 25, the second waveguide layer 24, the second cladding layer 29 and the cover layer 30 are then successively applied to the exposed area of the buffer layer 6, for example, again by means of MOVPE (not shown, see FIG 2a, b, c).
  • the outer regions and the central region of the semiconductor structure are removed to form the totally reflecting, closed waveguide.
  • This can be done, for example, by reactive ion etching using a suitable, known mask technique.
  • the side surfaces of the edge-emitting semiconductor structure produced in this way do not require any optical compensation and form a virtually loss-free ring laser resonator.
  • the etching mask 17 is removed, applied to the Bragg mirror 3, the electrically insulating mask layer 7 and the surface covered with a p-contact layer 32.
  • the substrate is provided with n-contact surfaces 9 (FIG. 12b).
  • the semiconductor laser device according to the invention is particularly suitable for use in an external resonator with an external mirror 33 and a partially transmissive concave deflection mirror 34, in which a frequency-selective element 35 and / or a frequency doubler 36 is located (see FIG.
  • the semiconductor laser device according to the invention via modulation of the pump source (by modulation of the pumping current) or via short circuit of the surface-emitting Semiconductor laser layer sequence (see Figure 14) are modulated.
  • the structures described above can be used not only in the exemplary InGaAlAs system, but also, for example, in the InGaN, InGaAsP or InGaAlP system.
  • the quantum wells consist of InGaN for 450 nm emission, the InGaN confinement layers with reduced refractive index, and the Bragg mirrors of an InGaAlN system.
  • the pump laser structure has an active region with quantum wells made of InGaN for emission at approximately 400 nm, as well as waveguide layers and cladding layers made of GaAlN, in which the desired refractive indices are set by varying the Al content.

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EP1287595B1 (de) 2006-01-11
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TW520578B (en) 2003-02-11
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CN1444787A (zh) 2003-09-24
EP1287595A1 (de) 2003-03-05
CN1905299A (zh) 2007-01-31
EP1615306B1 (de) 2007-11-14
JP4819290B2 (ja) 2011-11-24
DE10026734A1 (de) 2001-12-13
EP1615306A3 (de) 2006-01-25
CN1279667C (zh) 2006-10-11
JP2003535480A (ja) 2003-11-25
EP1615306A2 (de) 2006-01-11
DE50113278D1 (de) 2007-12-27
CN1905299B (zh) 2012-12-26

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