FR2688637B1 - Laser de puissance a emission par la surface et procede de fabrication de ce laser. - Google Patents

Laser de puissance a emission par la surface et procede de fabrication de ce laser.

Info

Publication number
FR2688637B1
FR2688637B1 FR9103022A FR9103022A FR2688637B1 FR 2688637 B1 FR2688637 B1 FR 2688637B1 FR 9103022 A FR9103022 A FR 9103022A FR 9103022 A FR9103022 A FR 9103022A FR 2688637 B1 FR2688637 B1 FR 2688637B1
Authority
FR
France
Prior art keywords
manufacturing
surface emitting
power laser
emitting power
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9103022A
Other languages
English (en)
Other versions
FR2688637A1 (fr
Inventor
Nouredine Bouadma
Louis Menigaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9103022A priority Critical patent/FR2688637B1/fr
Priority to GB9201944A priority patent/GB2264000B/en
Priority to US07/854,215 priority patent/US5548610A/en
Publication of FR2688637A1 publication Critical patent/FR2688637A1/fr
Application granted granted Critical
Publication of FR2688637B1 publication Critical patent/FR2688637B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR9103022A 1991-03-13 1991-03-13 Laser de puissance a emission par la surface et procede de fabrication de ce laser. Expired - Fee Related FR2688637B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9103022A FR2688637B1 (fr) 1991-03-13 1991-03-13 Laser de puissance a emission par la surface et procede de fabrication de ce laser.
GB9201944A GB2264000B (en) 1991-03-13 1992-01-30 Surface-emitting power laser and process for fabricating this laser
US07/854,215 US5548610A (en) 1991-03-13 1992-03-06 Surface-emitting power laser and process for fabricating this laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9103022A FR2688637B1 (fr) 1991-03-13 1991-03-13 Laser de puissance a emission par la surface et procede de fabrication de ce laser.

Publications (2)

Publication Number Publication Date
FR2688637A1 FR2688637A1 (fr) 1993-09-17
FR2688637B1 true FR2688637B1 (fr) 1998-08-28

Family

ID=9410681

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9103022A Expired - Fee Related FR2688637B1 (fr) 1991-03-13 1991-03-13 Laser de puissance a emission par la surface et procede de fabrication de ce laser.

Country Status (3)

Country Link
US (1) US5548610A (fr)
FR (1) FR2688637B1 (fr)
GB (1) GB2264000B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6327285B1 (en) 1997-05-09 2001-12-04 Semiconductor Laser International Corporation Surface mounted 2-D diode laser array package
US5933278A (en) * 1997-06-30 1999-08-03 Polaroid Corporation Monolithic multi-faceted mirror for combining multiple beams from different light sources by reflection
US5831960A (en) * 1997-07-17 1998-11-03 Motorola, Inc. Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication
US6797533B2 (en) * 2000-05-19 2004-09-28 Mcmaster University Quantum well intermixing in InGaAsP structures induced by low temperature grown InP
AU2001252071A1 (en) * 2000-05-19 2001-11-26 Mcmaster University A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures
DE10026734A1 (de) * 2000-05-30 2001-12-13 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US7408969B2 (en) * 2000-09-29 2008-08-05 Donald Bennett Hilliard Optical cavity and laser
JP2002141495A (ja) * 2000-11-02 2002-05-17 Takashi Katoda 集束イオンビームを用いて作製した極微細構造を有する電子デバイス及び光デバイス
US6792026B2 (en) * 2002-03-26 2004-09-14 Joseph Reid Henrichs Folded cavity solid-state laser
US6819701B2 (en) * 2002-03-26 2004-11-16 Joseph Reid Henrichs Super-luminescent folded cavity light emitting diode
US6879306B2 (en) * 2002-05-02 2005-04-12 Eastman Kodak Company Scanned display systems using color laser light sources
DE102004003696B4 (de) * 2004-01-24 2017-02-16 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zum simultanen Laserschweißen
WO2006132660A2 (fr) * 2004-09-29 2006-12-14 California Institute Of Technology Procede de traitement de materiaux pour lasers a semi-conducteur
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
US20140367816A1 (en) * 2013-06-12 2014-12-18 Avago Technologies General Ip (Singapore) Pte.Ltd. Photodetector device having light-collecting optical microstructure
US11410508B2 (en) * 2016-12-06 2022-08-09 Lmd Applied Science, Llc Beacon system
US11658453B2 (en) * 2018-01-29 2023-05-23 Ronald LaComb Concentric cylindrical circumferential laser
CN111106534B (zh) * 2019-10-30 2020-11-27 华灿光电股份有限公司 激光二极管及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649351A (en) * 1984-10-19 1987-03-10 Massachusetts Institute Of Technology Apparatus and method for coherently adding laser beams
GB2169134B (en) * 1984-11-16 1988-11-16 Canon Kk Multibeam emitting device
EP0228088A3 (fr) * 1985-12-30 1990-05-23 Robert Michael Dr. Schimpe Laser à surface émissive accordable
JPS63164387A (ja) * 1986-12-26 1988-07-07 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPH0815231B2 (ja) * 1986-12-26 1996-02-14 松下電器産業株式会社 半導体レ−ザ素子
JP2768672B2 (ja) * 1987-09-30 1998-06-25 株式会社日立製作所 面発光半導体レーザ
JPH01105590A (ja) * 1987-10-16 1989-04-24 Toshiba Corp 分布帰還型半導体発光素子
JPH01110781A (ja) * 1987-10-23 1989-04-27 Nec Corp 発光ダイオード
JP2692913B2 (ja) * 1987-12-19 1997-12-17 株式会社東芝 グレーティング結合型表面発光レーザ素子およびその変調方法
US5115445A (en) * 1988-02-02 1992-05-19 Massachusetts Institute Of Technology Microchip laser array
JPH01241885A (ja) * 1988-03-23 1989-09-26 Nec Corp 半導体レーザ
FR2639150B1 (fr) * 1988-11-15 1991-01-25 Thomson Hybrides Microondes Dispositif optoelectronique de puissance et son procede de realisation
JPH03257888A (ja) * 1990-03-07 1991-11-18 Kokusai Denshin Denwa Co Ltd <Kdd> 面発光半導体レーザ

Also Published As

Publication number Publication date
GB2264000A8 (en) 1993-08-11
FR2688637A1 (fr) 1993-09-17
GB2264000B (en) 1994-10-19
US5548610A (en) 1996-08-20
GB2264000A (en) 1993-08-11
GB9201944D0 (en) 1993-05-12

Similar Documents

Publication Publication Date Title
FR2688637B1 (fr) Laser de puissance a emission par la surface et procede de fabrication de ce laser.
FR2743195B1 (fr) Laser semi-conducteur a emission par la surface
FR2743196B1 (fr) Procede de fabrication d&#39;un laser semi-conducteur a emission par la surface
DE69704000D1 (de) Diodenlaseranordnung mit hohem Wirkungsgrad
FR2647973B1 (fr) Lasers de puissance pompes par diodes lasers
FR2675312B1 (fr) Procede de fabrication d&#39;une diode laser en gaas emettant de la lumiere visible.
DE69205388D1 (de) Oberflächenemittierender Laser.
FR2761822B1 (fr) Laser semiconducteur a emission de surface
DE69411280T2 (de) Laser sintern mit mehreren strahlen
IT1277977B1 (it) Dispositivi organici di emissione di luce multicolore
DE69204327D1 (de) Laserdioden-Array.
DE69331554D1 (de) Lichtemittierende Diode
EP0475372A3 (en) Surface emission type semiconductor laser
DE69312058T2 (de) Plattenlaser mit erhöhter lebensdauer
DE69522778T2 (de) Oberflächenemittierender Laser
DE69327425D1 (de) Drucktechniken mit mehreren Laserdioden
DE69412946T2 (de) Lichtemittierende Halbleiterdiode und Herstellungsverfahren
FR2750804B1 (fr) Procede de fabrication d&#39;un laser a emission par la surface
DE69212283D1 (de) Laserdioden-Array
DE69610522D1 (de) Oberflächenemittierender Laser mit verbessertem Wirkungsgrad
FR2744834B1 (fr) Cathode a emission de champ et son procede de fabrication
EP0531542A4 (en) Surface emitting type semiconductor laser and its manufacturing method
DE69703261T2 (de) Oberflächenemittierende Laser
DE69203784D1 (de) Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung.
KR970004181A (ko) 면발광 반도체 레이저 다이오드 및 그 제조방법

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20051130