EP1851356A1 - Cible tubulaire dotee d'une couche de liaison situee entre le tube cible et le tube support - Google Patents

Cible tubulaire dotee d'une couche de liaison situee entre le tube cible et le tube support

Info

Publication number
EP1851356A1
EP1851356A1 EP05819256A EP05819256A EP1851356A1 EP 1851356 A1 EP1851356 A1 EP 1851356A1 EP 05819256 A EP05819256 A EP 05819256A EP 05819256 A EP05819256 A EP 05819256A EP 1851356 A1 EP1851356 A1 EP 1851356A1
Authority
EP
European Patent Office
Prior art keywords
tube
target
target according
pipe
support tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP05819256A
Other languages
German (de)
English (en)
Inventor
Christoph Simons
Martin Schlott
Markus Schultheis
Martin Weigert
Lars Gusseck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36011023&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP1851356(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of EP1851356A1 publication Critical patent/EP1851356A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Definitions

  • the invention relates to a tube target with a cylindrical carrier tube and at least one arranged on the lateral surface of the target tube, wherein between the target tube and the carrier tube, a connecting layer is arranged.
  • large-area flat or planar targets are used for sputtering large-area substrates such as glass for the construction / architecture sector, for automotive glazing and for flat screen windows. These targets are characterized by a relatively low material yield of about 30-40% in the sputtering process. By contrast, the use of tube targets enables material yields at the target of up to 90% and minimizes the formation of so-called redeposite zones, which tend to release particles during the sputtering process.
  • thermal spraying processes such as, for example, plasma spraying and arc spraying processes, have hitherto usually been used, the corresponding target material being applied directly to a carrier pipe by the thermal spraying technique.
  • Disadvantages of this process are generally high oxygen values, high material losses during the manufacturing process and long process times with high energy and gas consumption.
  • Newer methods allow the direct pouring of the target material on a support tube (DE 10043 748, DE 100 63 383).
  • This technique is used successfully especially for low-melting materials such as Sn and Zn and provides target materials with a melting-type microstructure.
  • Tube-shaped sputtering materials with high melting point and strong difference of the coefficient of thermal expansion to the support tube can not be prepared in this way so far. Therefore, some of these Materialein such as Ag, Zn, SiAI are prefabricated in short tubular segments by melting and casting and then pushed together and fixed on a support tube (DE 102 53 319). The support tube provides the mech.
  • Some of them are poor wetting behavior of a standard solder against different target materials, different wetting behavior of the solder compared to target material and support tube, greatly different thermal expansion coefficients between target material and support tube, tendency to alloy between target material and solder material, poor thermal conductivity of the target material and thus difficulties in the process of Soldering, difficulty of temperature control over long lengths during soldering, uncontrollable solder filling, oxidation of the surfaces of the target material and support tube as well as the solder during the soldering process.
  • the object of the present invention is to improve the state of the art and to provide a reliably functioning pipe target.
  • the segmented tube target according to the invention consists of a carrier tube and one or more target segments. It is characterized in that the connecting layer is electrically conductive and has a wetting degree of> 90%, preferably> 95%.
  • the degree of wetting is present both on the lateral surface of the support tube and on the inner surface of the target tube. It is expedient that at least one end face of the support tube and / or the target tube connecting pieces, bearing mounts or flanges are arranged. Furthermore, it is advantageous that at least one target tube has an enlarged diameter at at least one end.
  • the material of the target tube may be formed of Cu, Al, Zr, Mo, W, Ti, Cr, Ni, Ta, Nb, Ag, Zn, Bi, Sn, Si or an alloy based on at least one of these elements or a ceramic material in the case of Al, preferably of an alloy with a rare earth element, preferably Nd. It is also appropriate that the one or more target tubes are machined from solid blocks of material or produced by direct casting of Hohlzylindem, extrusion, extrusion, sintering or hot isostatic pressing.
  • the connecting layer has a conductive adhesive or a solder material.
  • a solder material or at least one adhesion promoter or wetting agent layer and thereon the solder material can be arranged on the carrier tube and / or the target tube.
  • the solder material In, Sn, InSn, SnBi or other low-melting solder alloys having a liquidus temperature below 300 0 C contains or is formed therefrom.
  • Advantage of direct wetting is a cost savings compared to the version with adhesive layer.
  • the carrier tube and / or the target tube can be coated with a nickel-based adhesive layer, in particular of a nickel-aluminum or a nickel-titanium alloy.
  • an aluminum alloy adhesive layer results in good wettability and adhesion to the base material.
  • the support tube is preferably made of steel, but other materials such as titanium are conceivable.
  • the tube target according to the invention can be used for the production of display coatings. It has a long life, low cost, thermally and electrically good conductive connection between the support tube and target material for the purpose of cooling and construction of a stable sputtering plasma. Further advantages are an optimal use of the expensive target material only on the later alsopintragenden cladding area, by special guidance of the cooling during the bonding process a directed solidification from bottom to top, which leads to a pore and lunkerarm connection.
  • the surface of the support tube is pretreated to remove any debris and oxide remnants and to adjust roughness.
  • a homogeneous, highly thermally conductive coating ⁇ 1 mm is applied to this surface, which enables the wetting behavior to the solder and compensates for thermally induced stresses between the target material and the support tube.
  • Preferred layer materials are Al, Ni, Cu, Zn and their alloys.
  • the inner surfaces of the tubular target segments are treated.
  • coordinated processes and materials are to be selected.
  • an additional intermediate layer ⁇ 1 mm matched to the solder to be used, is applied both on the target side and on the carrier side.
  • Preferred materials are Al, Ni, Zn, In, Sn, Bi and their alloys.
  • a further lubricating film layer of a readily volatile oil can be applied both on the target and on the carrier side. This layer must be completely removed before the actual soldering process.
  • the tube target prepared in this way is heated homogeneously, for example in a tube furnace under an inert purge gas atmosphere, and then the solder gap between carrier tube and target segments is filled with solder matched to the materials.
  • solder matched to the materials.
  • both ascending and falling filling techniques, as well as the filling to choose under pressure are advantageous.
  • a defined cooling program is used to solidify the solder.
  • the segments are fixed on the carrier tube via an adhesive method. This purpose is served by a thermally conductive adhesive, which materially fills the gap between the carrier tube and target segments.
  • the tube segments may also be attached to the carrier tube by means of spring-type systems or by means of clamping systems.
  • Figure 1 a pipe target.
  • a support tube 1 On a support tube 1 a plurality of target tubes 2 are applied in a segmented manner. The production is explained below.
  • the intermediate layer of the support tube is covered area-wide with an approximately 0.5 mm thick Sn solder foil, which is soldered by local heating by means of a gas burner.
  • the intermediate layer of the aluminum target tube segments 2 is designed nationwide with a 0.5 mm thick indium foil, which is soldered by local heating by means of a gas burner.
  • a thin layer of lubricating film of easily evaporable oil is applied to both layers applied last.
  • the tubular target segments 2 are pushed onto the support tube 1 by means of centering and Distanzh bamboon.
  • the lubricating film layer is rinsed out.
  • the prepared tube target is homogeneously in a tube furnace at 200 0 C heated.
  • the tube target is removed from the tube furnace, erected and mounted in a vertical soldering. Here, all gaps are sealed with quick-release sealing clips. During these preparations, the tube target is covered with thermally insulating material and kept at 17O 0 C via an internal heating. In addition, the inert gas purging is maintained. As a solder about 1, 5 kg of indium are melted, brought to 250 0 C and filled into the solder gap.
  • a mechanical excitation is coupled to the vertical pipe target during the casting of the solder.
  • all heating and insulation measures are set on the pipe and the cooling process is started by means of four multi-hole lances in the vertical soldering device by means of compressed air.
  • the cooling rate is controlled by gas valves. After cooling the tube target to room temperature, the tube target can be removed from the vertical brazing device and serged by Lotresten.
  • a steel support tube 1 of length 1, 5 m with outer diameter 0 a 133 mm, inner diameter 0
  • a steel support tube 1 of length 1, 5 m with outer diameter 0 a 133 mm, inner diameter 0
  • 125 mm is roughened for preparation by means of a brushing process and then coated with a galvanic Cu layer.
  • Example 4 Example 4:
  • a steel support tube 1 of length 1, 5 m with outer diameter 0 a 133 mm, inner diameter 0
  • the inner surface is cleaned and roughened by means of a suitable surface treatment. There are no further layers applied.
  • the further procedure of the soldering process corresponds to Example 1.

Abstract

L'invention concerne une cible tubulaire comportant un tube support cylindrique et au moins un tube cible disposé sur la surface latérale du tube support, entre le tube cible et le tube support se trouvant une couche de liaison. L'invention est caractérisée en ce que cette couche de liaison est électriquement conductrice et qu'elle présente un taux de mouillage > 90 %.
EP05819256A 2004-12-14 2005-12-07 Cible tubulaire dotee d'une couche de liaison situee entre le tube cible et le tube support Ceased EP1851356A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004060423.1A DE102004060423B4 (de) 2004-12-14 2004-12-14 Rohrtarget und dessen Verwendung
PCT/EP2005/013084 WO2006063721A1 (fr) 2004-12-14 2005-12-07 Cible tubulaire dotee d'une couche de liaison situee entre le tube cible et le tube support

Publications (1)

Publication Number Publication Date
EP1851356A1 true EP1851356A1 (fr) 2007-11-07

Family

ID=36011023

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05819256A Ceased EP1851356A1 (fr) 2004-12-14 2005-12-07 Cible tubulaire dotee d'une couche de liaison situee entre le tube cible et le tube support

Country Status (8)

Country Link
US (1) US20090250337A1 (fr)
EP (1) EP1851356A1 (fr)
JP (1) JP2008523251A (fr)
KR (1) KR20070086523A (fr)
CN (1) CN101080508A (fr)
DE (1) DE102004060423B4 (fr)
TW (1) TWI404813B (fr)
WO (1) WO2006063721A1 (fr)

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DE102006009749A1 (de) 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
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JP5679315B2 (ja) * 2010-03-31 2015-03-04 日立金属株式会社 円筒型Ｍｏ合金ターゲットの製造方法
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JP2011252237A (ja) * 2011-09-16 2011-12-15 Tosoh Corp 円筒形スパッタリングターゲットの製造方法
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KR20160085907A (ko) 2012-08-22 2016-07-18 제이엑스금속주식회사 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
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JP2015036431A (ja) * 2013-08-12 2015-02-23 住友金属鉱山株式会社 円筒形スパッタリングターゲットおよびその製造方法。
JP5799154B2 (ja) * 2013-12-13 2015-10-21 Jx日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
JP6233224B2 (ja) * 2014-07-17 2017-11-22 住友金属鉱山株式会社 接合材シート及び円筒形スパッタリングターゲットの製造方法
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TWI704245B (zh) * 2015-02-13 2020-09-11 日商Ｊｘ金屬股份有限公司 濺射靶件及其製造方法
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JP5909006B1 (ja) * 2015-03-23 2016-04-26 Ｊｘ金属株式会社 円筒型スパッタリングターゲット及びその製造方法
CN105755445B (zh) * 2015-12-10 2019-07-05 金鸿医材科技股份有限公司 一种具有复合靶材的卷对卷溅镀制程与其制成品
CN105624627B (zh) * 2016-03-14 2018-08-31 无锡舒玛天科新能源技术有限公司 绑定式磁控溅射旋转靶材及其制备方法
CN110218983A (zh) * 2019-06-25 2019-09-10 杨晔 磁控溅射旋转靶材的绑定方法
CN110129759B (zh) * 2019-06-27 2020-12-25 江阴恩特莱特镀膜科技有限公司 一种用于Low-E玻璃的硅铝锆靶材及其制备方法
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CN113523239A (zh) * 2021-06-29 2021-10-22 芜湖映日科技股份有限公司 一种使用铟锡混合材料的靶材绑定工艺
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Also Published As

Publication number Publication date
CN101080508A (zh) 2007-11-28
JP2008523251A (ja) 2008-07-03
WO2006063721A1 (fr) 2006-06-22
US20090250337A1 (en) 2009-10-08
DE102004060423B4 (de) 2016-10-27
DE102004060423A1 (de) 2006-06-29
KR20070086523A (ko) 2007-08-27
TWI404813B (zh) 2013-08-11
TW200632121A (en) 2006-09-16

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