EP1656701A4 - Halbleitereinrichtung und verfahren - Google Patents
Halbleitereinrichtung und verfahrenInfo
- Publication number
- EP1656701A4 EP1656701A4 EP04781659A EP04781659A EP1656701A4 EP 1656701 A4 EP1656701 A4 EP 1656701A4 EP 04781659 A EP04781659 A EP 04781659A EP 04781659 A EP04781659 A EP 04781659A EP 1656701 A4 EP1656701 A4 EP 1656701A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/646,457 US20050040432A1 (en) | 2003-08-22 | 2003-08-22 | Light emitting device and method |
US10/861,320 US7998807B2 (en) | 2003-08-22 | 2004-06-04 | Method for increasing the speed of a light emitting biopolar transistor device |
US10/861,103 US7091082B2 (en) | 2003-08-22 | 2004-06-04 | Semiconductor method and device |
PCT/US2004/027019 WO2005020287A2 (en) | 2003-08-22 | 2004-08-20 | Semiconductor device and method |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1656701A2 EP1656701A2 (de) | 2006-05-17 |
EP1656701A4 true EP1656701A4 (de) | 2007-10-10 |
Family
ID=34222410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04781659A Withdrawn EP1656701A4 (de) | 2003-08-22 | 2004-08-20 | Halbleitereinrichtung und verfahren |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1656701A4 (de) |
JP (1) | JP2007503710A (de) |
KR (1) | KR20060063947A (de) |
CA (1) | CA2536329A1 (de) |
WO (1) | WO2005020287A2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006317571A (ja) * | 2005-05-11 | 2006-11-24 | Fuji Photo Film Co Ltd | 光学補償フィルム、偏光板および液晶表示装置 |
US7535034B2 (en) | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
KR20070117238A (ko) * | 2006-06-08 | 2007-12-12 | 삼성전기주식회사 | 반도체 발광 트랜지스터 |
US7711015B2 (en) | 2007-04-02 | 2010-05-04 | The Board Of Trustees Of The University Of Illinois | Method for controlling operation of light emitting transistors and laser transistors |
CN100466313C (zh) * | 2007-05-21 | 2009-03-04 | 华南师范大学 | ppn型发光晶体管及其制备方法 |
US7953133B2 (en) | 2007-10-12 | 2011-05-31 | The Board Of Trustees Of The University Of Illinois | Light emitting and lasing semiconductor devices and methods |
US7813396B2 (en) | 2007-10-12 | 2010-10-12 | The Board Of Trustees Of The University Of Illinois | Transistor laser devices and methods |
JP5676273B2 (ja) * | 2008-01-21 | 2015-02-25 | インシアヴァ (ピーテーワイ) リミテッド | パンチスルー効果を利用した半導体発光デバイス |
CA2748597A1 (en) * | 2009-01-08 | 2010-07-15 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor devices and methods |
JP5739357B2 (ja) * | 2011-03-04 | 2015-06-24 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタ |
WO2014004375A1 (en) | 2012-06-25 | 2014-01-03 | Quantum Electro Opto Systems Sdn. Bhd. | Method and apparatus for aligning of opto-electronic components |
US8948226B2 (en) | 2012-08-20 | 2015-02-03 | The Board Of Trustees Of The University Of Illinois | Semiconductor device and method for producing light and laser emission |
US10874876B2 (en) * | 2018-01-26 | 2020-12-29 | International Business Machines Corporation | Multiple light sources integrated in a neural probe for multi-wavelength activation |
JP7216270B2 (ja) * | 2018-09-28 | 2023-02-01 | 日亜化学工業株式会社 | 半導体発光素子 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231788A (ja) * | 1985-04-08 | 1986-10-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04237135A (ja) * | 1991-01-21 | 1992-08-25 | Nippon Telegr & Teleph Corp <Ntt> | 半導体積層構造体 |
US5239550A (en) * | 1991-12-03 | 1993-08-24 | University Of Connecticut | Transistor lasers |
JP2853432B2 (ja) * | 1992-01-08 | 1999-02-03 | 日本電気株式会社 | 半導体光集積素子 |
JPH06260493A (ja) * | 1993-03-05 | 1994-09-16 | Mitsubishi Electric Corp | 半導体装置 |
US5293050A (en) * | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
SE511314C2 (sv) * | 1997-02-07 | 1999-09-06 | Ericsson Telefon Ab L M | Framställning av heterobipolär transistor och laserdiod på samma substrat |
US6707074B2 (en) * | 2000-07-04 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and apparatus for driving the same |
JP2002164352A (ja) * | 2000-09-13 | 2002-06-07 | Toshiba Corp | バイポーラトランジスタ、半導体発光素子、及び半導体素子 |
JP2002190448A (ja) * | 2000-12-20 | 2002-07-05 | Fujitsu Ltd | 基板、電子装置およびそれらの製造方法 |
FR2820890A1 (fr) * | 2001-02-15 | 2002-08-16 | Cit Alcatel | Composant optique integre monolithique comportant un modulateur et un transistor bipolaire a heterojonction |
-
2004
- 2004-08-20 KR KR1020067003675A patent/KR20060063947A/ko not_active Application Discontinuation
- 2004-08-20 EP EP04781659A patent/EP1656701A4/de not_active Withdrawn
- 2004-08-20 CA CA002536329A patent/CA2536329A1/en not_active Abandoned
- 2004-08-20 WO PCT/US2004/027019 patent/WO2005020287A2/en active Search and Examination
- 2004-08-20 JP JP2006524067A patent/JP2007503710A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231788A (ja) * | 1985-04-08 | 1986-10-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
Non-Patent Citations (4)
Title |
---|
FENG M ET AL: "Light-emitting transistor: light emission from InGaP/GaAs heterojunction bipolar transistors", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 1, 5 January 2004 (2004-01-05), pages 151 - 153, XP002448259, ISSN: 0003-6951 * |
FENG M ET AL: "Quantum-well-base heterojunction bipolar light-emitting transistor", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 11, 15 March 2004 (2004-03-15), pages 1952 - 1954, XP002448258, ISSN: 0003-6951 * |
JAIN F ET AL: "RESONANT TUNNELING TRANSISTOR LASERS: A NEW APPROACH TO OBTAIN MULTI-STATE SWITCHING AND BISTABLE OPERATION", INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, SPRINGER, DORDRECHT, NL, vol. 14, no. 6, 1 June 1993 (1993-06-01), pages 1311 - 1322, XP000381013, ISSN: 0195-9271 * |
MORI Y ET AL: "Operation principle of the InGaAsP/InP laser transistor", APPLIED PHYSICS LETTERS USA, vol. 47, no. 7, 1 October 1985 (1985-10-01), pages 649 - 651, XP002448260, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
KR20060063947A (ko) | 2006-06-12 |
WO2005020287A3 (en) | 2005-05-06 |
WO2005020287A9 (en) | 2005-03-31 |
JP2007503710A (ja) | 2007-02-22 |
EP1656701A2 (de) | 2006-05-17 |
WO2005020287A2 (en) | 2005-03-03 |
CA2536329A1 (en) | 2005-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20060307 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20070912 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/737 20060101ALI20070903BHEP Ipc: H01L 29/205 20060101AFI20050512BHEP Ipc: H01L 33/00 20060101ALI20070903BHEP Ipc: H01S 5/06 20060101ALI20070903BHEP |
|
17Q | First examination report despatched |
Effective date: 20130703 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20170301 |