JP2007503710A - 半導体素子及び方法 - Google Patents

半導体素子及び方法 Download PDF

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Publication number
JP2007503710A
JP2007503710A JP2006524067A JP2006524067A JP2007503710A JP 2007503710 A JP2007503710 A JP 2007503710A JP 2006524067 A JP2006524067 A JP 2006524067A JP 2006524067 A JP2006524067 A JP 2006524067A JP 2007503710 A JP2007503710 A JP 2007503710A
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Japan
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base
base region
quantum
emitter
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JP2006524067A
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English (en)
Japanese (ja)
Inventor
ミルトン フォン
ニック ジュニア ホロニャック
ワリード ハーフェツ
Original Assignee
ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ
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Priority claimed from US10/646,457 external-priority patent/US20050040432A1/en
Priority claimed from US10/861,320 external-priority patent/US7998807B2/en
Priority claimed from US10/861,103 external-priority patent/US7091082B2/en
Application filed by ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ filed Critical ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ
Publication of JP2007503710A publication Critical patent/JP2007503710A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
JP2006524067A 2003-08-22 2004-08-20 半導体素子及び方法 Pending JP2007503710A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/646,457 US20050040432A1 (en) 2003-08-22 2003-08-22 Light emitting device and method
US10/861,320 US7998807B2 (en) 2003-08-22 2004-06-04 Method for increasing the speed of a light emitting biopolar transistor device
US10/861,103 US7091082B2 (en) 2003-08-22 2004-06-04 Semiconductor method and device
PCT/US2004/027019 WO2005020287A2 (en) 2003-08-22 2004-08-20 Semiconductor device and method

Publications (1)

Publication Number Publication Date
JP2007503710A true JP2007503710A (ja) 2007-02-22

Family

ID=34222410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006524067A Pending JP2007503710A (ja) 2003-08-22 2004-08-20 半導体素子及び方法

Country Status (5)

Country Link
EP (1) EP1656701A4 (de)
JP (1) JP2007503710A (de)
KR (1) KR20060063947A (de)
CA (1) CA2536329A1 (de)
WO (1) WO2005020287A2 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006317571A (ja) * 2005-05-11 2006-11-24 Fuji Photo Film Co Ltd 光学補償フィルム、偏光板および液晶表示装置
JP2012514870A (ja) * 2009-01-08 2012-06-28 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ 発光並びにレーザ半導体素子および方法
JP2012199516A (ja) * 2011-03-04 2012-10-18 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ
JP2020053628A (ja) * 2018-09-28 2020-04-02 日亜化学工業株式会社 半導体発光素子

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535034B2 (en) 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
KR20070117238A (ko) * 2006-06-08 2007-12-12 삼성전기주식회사 반도체 발광 트랜지스터
US7711015B2 (en) 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
CN100466313C (zh) * 2007-05-21 2009-03-04 华南师范大学 ppn型发光晶体管及其制备方法
US7953133B2 (en) 2007-10-12 2011-05-31 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
US7813396B2 (en) 2007-10-12 2010-10-12 The Board Of Trustees Of The University Of Illinois Transistor laser devices and methods
JP5676273B2 (ja) * 2008-01-21 2015-02-25 インシアヴァ （ピーテーワイ） リミテッド パンチスルー効果を利用した半導体発光デバイス
WO2014004375A1 (en) 2012-06-25 2014-01-03 Quantum Electro Opto Systems Sdn. Bhd. Method and apparatus for aligning of opto-electronic components
US8948226B2 (en) 2012-08-20 2015-02-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method for producing light and laser emission
US10874876B2 (en) * 2018-01-26 2020-12-29 International Business Machines Corporation Multiple light sources integrated in a neural probe for multi-wavelength activation

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 半導体発光素子
JPH04237135A (ja) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> 半導体積層構造体
JPH05190978A (ja) * 1992-01-08 1993-07-30 Nec Corp 半導体光集積素子
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
JPH06260493A (ja) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp 半導体装置
JP2001511948A (ja) * 1997-02-07 2001-08-14 テレフオンアクチーボラゲツト エル エム エリクソン（パブル） 同一基板上へのヘテロバイポーラトランジスタおよびレーザーダイオードの製造
JP2002164352A (ja) * 2000-09-13 2002-06-07 Toshiba Corp バイポーラトランジスタ、半導体発光素子、及び半導体素子
JP2002190448A (ja) * 2000-12-20 2002-07-05 Fujitsu Ltd 基板、電子装置およびそれらの製造方法
JP2002318375A (ja) * 2001-02-15 2002-10-31 Alcatel 変調器およびへテロ接合バイポーラトランジスタを含むモノリシック統合光学構成要素

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6707074B2 (en) * 2000-07-04 2004-03-16 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and apparatus for driving the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 半導体発光素子
JPH04237135A (ja) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> 半導体積層構造体
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
JPH05190978A (ja) * 1992-01-08 1993-07-30 Nec Corp 半導体光集積素子
JPH06260493A (ja) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp 半導体装置
JP2001511948A (ja) * 1997-02-07 2001-08-14 テレフオンアクチーボラゲツト エル エム エリクソン（パブル） 同一基板上へのヘテロバイポーラトランジスタおよびレーザーダイオードの製造
JP2002164352A (ja) * 2000-09-13 2002-06-07 Toshiba Corp バイポーラトランジスタ、半導体発光素子、及び半導体素子
JP2002190448A (ja) * 2000-12-20 2002-07-05 Fujitsu Ltd 基板、電子装置およびそれらの製造方法
JP2002318375A (ja) * 2001-02-15 2002-10-31 Alcatel 変調器およびへテロ接合バイポーラトランジスタを含むモノリシック統合光学構成要素

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006317571A (ja) * 2005-05-11 2006-11-24 Fuji Photo Film Co Ltd 光学補償フィルム、偏光板および液晶表示装置
JP2012514870A (ja) * 2009-01-08 2012-06-28 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ 発光並びにレーザ半導体素子および方法
JP2012199516A (ja) * 2011-03-04 2012-10-18 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ
JP2020053628A (ja) * 2018-09-28 2020-04-02 日亜化学工業株式会社 半導体発光素子
JP7216270B2 (ja) 2018-09-28 2023-02-01 日亜化学工業株式会社 半導体発光素子

Also Published As

Publication number Publication date
KR20060063947A (ko) 2006-06-12
WO2005020287A3 (en) 2005-05-06
EP1656701A4 (de) 2007-10-10
WO2005020287A9 (en) 2005-03-31
EP1656701A2 (de) 2006-05-17
WO2005020287A2 (en) 2005-03-03
CA2536329A1 (en) 2005-03-03

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