EP1612856B8 - Vorrichtung und verfahren zur reinigung einer cvd-anlage - Google Patents
Vorrichtung und verfahren zur reinigung einer cvd-anlageInfo
- Publication number
- EP1612856B8 EP1612856B8 EP04720142A EP04720142A EP1612856B8 EP 1612856 B8 EP1612856 B8 EP 1612856B8 EP 04720142 A EP04720142 A EP 04720142A EP 04720142 A EP04720142 A EP 04720142A EP 1612856 B8 EP1612856 B8 EP 1612856B8
- Authority
- EP
- European Patent Office
- Prior art keywords
- cleaning
- reaction chamber
- light intensity
- cvd device
- cleaning cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 2
- 229910004014 SiF4 Inorganic materials 0.000 abstract 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract 2
- 238000004566 IR spectroscopy Methods 0.000 abstract 1
- 239000006227 byproduct Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003070329A JP4385086B2 (ja) | 2003-03-14 | 2003-03-14 | Cvd装置のクリーニング装置およびcvd装置のクリーニング方法 |
PCT/JP2004/003269 WO2004082009A1 (ja) | 2003-03-14 | 2004-03-12 | Cvd装置のクリーニング装置およびcvd装置のクリーニング方法 |
Publications (4)
Publication Number | Publication Date |
---|---|
EP1612856A1 EP1612856A1 (de) | 2006-01-04 |
EP1612856A4 EP1612856A4 (de) | 2009-01-28 |
EP1612856B1 EP1612856B1 (de) | 2011-08-24 |
EP1612856B8 true EP1612856B8 (de) | 2012-02-08 |
Family
ID=32984649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04720142A Expired - Lifetime EP1612856B8 (de) | 2003-03-14 | 2004-03-12 | Vorrichtung und verfahren zur reinigung einer cvd-anlage |
Country Status (4)
Country | Link |
---|---|
US (1) | US8043438B2 (de) |
EP (1) | EP1612856B8 (de) |
JP (1) | JP4385086B2 (de) |
WO (1) | WO2004082009A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040261712A1 (en) * | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
US20060021633A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
JP4355321B2 (ja) | 2005-03-04 | 2009-10-28 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
JP2006339253A (ja) * | 2005-05-31 | 2006-12-14 | Toshiba Corp | プラズマ処理装置及びプラズマ処理方法 |
JP5016294B2 (ja) * | 2006-11-10 | 2012-09-05 | 東京エレクトロン株式会社 | 基板処理装置及び該装置の分析方法 |
JP5113705B2 (ja) * | 2007-10-16 | 2013-01-09 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
JP5698043B2 (ja) * | 2010-08-04 | 2015-04-08 | 株式会社ニューフレアテクノロジー | 半導体製造装置 |
KR20130105308A (ko) * | 2010-08-25 | 2013-09-25 | 린데 악티엔게젤샤프트 | 불소 분자의 동일반응계내 활성화를 이용한 증착 챔버 세정 방법 |
JP2013541188A (ja) * | 2010-08-25 | 2013-11-07 | リンデ アクチエンゲゼルシャフト | 分子状フッ素を用いるリアクターボックスチャンバのクリーニング |
JP5876248B2 (ja) * | 2011-08-09 | 2016-03-02 | 東京エレクトロン株式会社 | パーティクルモニタ方法、パーティクルモニタ装置 |
JP5763477B2 (ja) * | 2011-08-26 | 2015-08-12 | 大陽日酸株式会社 | 炭化珪素成膜装置、及び炭化珪素除去方法 |
JP5973850B2 (ja) * | 2012-09-03 | 2016-08-23 | 大陽日酸株式会社 | クリーニング終点検知方法 |
US10724137B2 (en) | 2013-02-05 | 2020-07-28 | Kokusai Eletric Corporation | Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and cleaning completion determining method |
DE102013101610B4 (de) * | 2013-02-19 | 2015-10-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Ferndetektion eines nicht infrarotaktiven Zielgases |
US10535506B2 (en) | 2016-01-13 | 2020-01-14 | Mks Instruments, Inc. | Method and apparatus for deposition cleaning in a pumping line |
CN105714270A (zh) * | 2016-04-15 | 2016-06-29 | 信利(惠州)智能显示有限公司 | 化学气相沉积清洗终点监测方法及其系统 |
US11262340B2 (en) * | 2017-12-01 | 2022-03-01 | Mks Instruments, Inc. | Multi-sensor gas sampling detection system for radical gases and short-lived molecules and method of use |
JP6799549B2 (ja) * | 2018-01-16 | 2020-12-16 | 東京エレクトロン株式会社 | プラズマ処理装置の部品をクリーニングする方法 |
WO2019241718A1 (en) * | 2018-06-15 | 2019-12-19 | Lam Research Corporation | Cleaning system for removing deposits from pump in an exhaust of a substrate processing system |
KR102154671B1 (ko) * | 2019-03-27 | 2020-09-10 | 주식회사 이엘 | 반도체 및 디스플레이 공정배출 온실가스 저감시설의 저감효율 자동측정분석시스템 |
US20210189561A1 (en) * | 2019-12-20 | 2021-06-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for monitoring and performing thin film deposition |
TWI755979B (zh) * | 2019-12-20 | 2022-02-21 | 台灣積體電路製造股份有限公司 | 薄膜沉積系統以及沉積薄膜方法 |
US11745229B2 (en) | 2020-08-11 | 2023-09-05 | Mks Instruments, Inc. | Endpoint detection of deposition cleaning in a pumping line and a processing chamber |
US11664197B2 (en) | 2021-08-02 | 2023-05-30 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
CN114360997B (zh) * | 2021-12-09 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 多腔室清洗方法和半导体工艺设备 |
US20240035154A1 (en) * | 2022-07-27 | 2024-02-01 | Applied Materials, Inc. | Fluorine based cleaning for plasma doping applications |
WO2024118852A1 (en) * | 2022-12-02 | 2024-06-06 | Lam Research Corporation | Spectral sensing of process chamber conditions |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5169407A (en) * | 1987-03-31 | 1992-12-08 | Kabushiki Kaisha Toshiba | Method of determining end of cleaning of semiconductor manufacturing apparatus |
JP3211480B2 (ja) | 1993-05-07 | 2001-09-25 | 富士電機株式会社 | ドライクリーニング方法 |
EP0697467A1 (de) | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Verfahren und Vorrichtung zur Reinigung einer Beschichtungskammer |
JP3350264B2 (ja) | 1994-12-22 | 2002-11-25 | 松下電器産業株式会社 | プラズマクリーニング方法 |
US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
JP2912188B2 (ja) | 1995-04-27 | 1999-06-28 | 広島日本電気株式会社 | 成膜装置及び成膜方法 |
US5868852A (en) * | 1997-02-18 | 1999-02-09 | Air Products And Chemicals, Inc. | Partial clean fluorine thermal cleaning process |
US6534007B1 (en) | 1997-08-01 | 2003-03-18 | Applied Komatsu Technology, Inc. | Method and apparatus for detecting the endpoint of a chamber cleaning |
WO1999064814A1 (en) | 1998-06-12 | 1999-12-16 | On-Line Technologies, Inc. | Method and apparatus for determining processing chamber cleaning or wafer etching endpoint |
US6374831B1 (en) * | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
JP2000235955A (ja) | 1999-02-15 | 2000-08-29 | Matsushita Electronics Industry Corp | Cvd装置およびcvd装置のクリーニング方法 |
JP2001028362A (ja) | 1999-07-15 | 2001-01-30 | Toshiba Corp | 半導体装置の製造方法及び製造装置 |
JP4408507B2 (ja) | 1999-12-15 | 2010-02-03 | キヤノンアネルバ株式会社 | ハロゲン化化合物の質量分析装置 |
JP2001351568A (ja) * | 2000-06-06 | 2001-12-21 | Anelva Corp | イオン付着質量分析の方法および装置 |
JP2002280376A (ja) | 2001-03-22 | 2002-09-27 | Research Institute Of Innovative Technology For The Earth | Cvd装置のクリーニング方法およびそのためのクリーニング装置 |
WO2002090615A1 (en) | 2001-05-04 | 2002-11-14 | Lam Research Corporation | Duo-step plasma cleaning of chamber residues |
US20030005943A1 (en) * | 2001-05-04 | 2003-01-09 | Lam Research Corporation | High pressure wafer-less auto clean for etch applications |
US6815362B1 (en) * | 2001-05-04 | 2004-11-09 | Lam Research Corporation | End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US20040045577A1 (en) * | 2002-09-10 | 2004-03-11 | Bing Ji | Cleaning of processing chambers with dilute NF3 plasmas |
-
2003
- 2003-03-14 JP JP2003070329A patent/JP4385086B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-12 WO PCT/JP2004/003269 patent/WO2004082009A1/ja active Application Filing
- 2004-03-12 EP EP04720142A patent/EP1612856B8/de not_active Expired - Lifetime
- 2004-03-12 US US10/548,874 patent/US8043438B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2004082009A1 (ja) | 2004-09-23 |
EP1612856A4 (de) | 2009-01-28 |
EP1612856B1 (de) | 2011-08-24 |
JP2004281673A (ja) | 2004-10-07 |
US20060207630A1 (en) | 2006-09-21 |
US8043438B2 (en) | 2011-10-25 |
JP4385086B2 (ja) | 2009-12-16 |
EP1612856A1 (de) | 2006-01-04 |
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