WO1999064814A1 - Method and apparatus for determining processing chamber cleaning or wafer etching endpoint - Google Patents
Method and apparatus for determining processing chamber cleaning or wafer etching endpoint Download PDFInfo
- Publication number
- WO1999064814A1 WO1999064814A1 PCT/US1999/013339 US9913339W WO9964814A1 WO 1999064814 A1 WO1999064814 A1 WO 1999064814A1 US 9913339 W US9913339 W US 9913339W WO 9964814 A1 WO9964814 A1 WO 9964814A1
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- WIPO (PCT)
- Prior art keywords
- radiation
- wavelength
- analyte gas
- indicator species
- gas
- Prior art date
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- 238000012545 processing Methods 0.000 title claims abstract description 26
- 238000004140 cleaning Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 60
- 230000005855 radiation Effects 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000012491 analyte Substances 0.000 claims description 61
- 230000008569 process Effects 0.000 claims description 25
- 238000010521 absorption reaction Methods 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 229910004014 SiF4 Inorganic materials 0.000 claims description 17
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 13
- 230000003595 spectral effect Effects 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005070 sampling Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000013626 chemical specie Substances 0.000 claims description 5
- 238000004611 spectroscopical analysis Methods 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000002474 experimental method Methods 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000001307 laser spectroscopy Methods 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- -1 fluoride free radical Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 35
- 241000894007 species Species 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 17
- 238000004458 analytical method Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 229910001632 barium fluoride Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910002110 ceramic alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004476 mid-IR spectroscopy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/85—Investigating moving fluids or granular solids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
Definitions
- a plasma containing fluorine free radicals (F-) is struck in the processing chamber to effect cleaning; the free radicals react with the contaminating silicon material to form various volatile species, including SiF 4 .
- Optical sensors are used to monitor the emission intensity of the excited unreacted fluorine free radicals remaining in the plasma, to thereby determine the cleaning end point.
- the broad objects of the present invention are to provide an apparatus and method for quickly, effectively, and accurately determining the end point or other parameters of a process carried out at a reaction site and, in particular, the end point of etching or of processing chamber cleaning in connection with the fabrication of semiconductor wafers and devices.
- More specific objects of the invention are to provide such an apparatus and method especially for the etching of silicon wafers and the cleaning of chambers in which they are processed, whereby the cleaning end point or other parameter is determined by analysis of the gaseous product produced in the processing chamber and, in particular, by optical analysis of the gas for the virtual absence, or significant change in the concentration, of a silicon reaction product indicator species.
- an optical method for the detection of the endpoint of a process that is carried out at a reaction site in which process substances react chemically to produce an analyte gas containing a volatile chemical indicator species having a radia- tion absorption characteristic, indicative of the concentration of said indicator species in said analyte gas, at at least a first wavelength.
- the method comprises the steps:
- the "second" signal (a reference signal) may conveniently and effectively be obtained by: (1) detecting, effectively separately from the first wavelength, the intensity of radiation of a second wavelength, projected through the analyte gas, for which the analyte gas does not have a significant absorption characteristic; (2) detecting, effectively separately from the first wavelength, the intensity of radiation of a spectral beam, projected through the analyte gas, wherein the spectral beam contains a range of frequencies to the absorption of which, by the analyte gas, the indicator species makes no more than a minor contribution; or (3) detecting radiation of at least the first wavelength projected through a modified form of the analyte gas, the modified form differing effectively from the analyte gas itself only by being substantially devoid of the indicator species.
- the at least one beam (which will usually be a single beam) will be comprised of discrete infrared spectral regions including such first and second wavelengths, and will be filtered optically prior to detection to discriminate the wavelengths from one another.
- the substances that react with one another will include silicon and usually a fluorine species, with the analyte gas preferably comprising a fluorine-containing plasma or a fluorine-containing plasma product; the indicator species will preferably be SiF 4 , and the first wavelength will have a nominal value of 9.7 microns.
- the method will additionally include the preliminary steps, effected in the processing chamber, of (f) etching silicon from at least one device comprised of silicon using a fluorine plasma, the method being carried out for the purpose of determining the end point of a process of either cleaning of surfaces within the chamber or of etching of the silicon device.
- the method may additionally include the steps, effected prior to the foregoing step (a) and advantageously by use of Fourier Transform Infrared (FT-IR) spectroscopy, filter-based spectroscopy, and dispersive spectroscopy, of:
- FT-IR Fourier Transform Infrared
- the method of the invention is employed for the detection of an etch rate, deposition rate, etch amount, deposition amount, and/or faults that are achieved or occur in a process, utilizing the steps herein set forth.
- apparatus for measuring a volatile chemical species that is generated at a reaction site and is contained in an analyte gas withdrawn therefrom comprising: (a) means for generating at least one beam of radiation containing at least a first wavelength, preferably in the infrared range, that is absorbed strongly by the generated chemical species that is to be measured;
- a conduit for gas flow from the reaction site constituting a sampling site and having windows fabricated of a composition that is resistant to corrosion by the analyte gas, that at least limits process contamination, and that is transparent to the at least one beam, the windows being aligned for effective traversal of the analyte gas, by the generated radiation beam, in the gas flow conduit;
- At least one radiation detector that is responsive to at least the first wavelength of radiation, and that is constructed for generating a first electrical signal that is indicative of the intensity of at least the first wavelength of radiation, the detector being operatively disposed to responsively intercept the at least one radiation beam exiting the gas flow conduit through the other of the windows;
- signal interpretation means including electronic data processing means, for analyzing the first and second electrical signals to determine the level of absorption of at least the first wavelength of radiation, by the indicator species, that occurs during passage of the beam through the analyte gas.
- the means for generating (and modulating) the beam will comprise a Fourier Transform Infrared spectrometer.
- the apparatus may comprise separate means, such as a filter wheel, operatively disposed in the beam path for modulating the beam of radiation so as to discriminate radiation of different wavelengths, and most desirably the reaction site will comprise a processing chamber for fabrication of silicon semiconductor devices.
- zero absorption, or absorption below a specified level of the efficiently absorbed wavelength of radiation will be indicative of the absence, or of the attainment of a value below a threshold level, of the chemical species generated by reaction with the contaminating silicon material. That will in turn indicate that the endpoint for cleaning of the processing chamber or for etching of the wafer or other device, has been attained.
- a correlation between the indicator species and such an end point can be estab- lished empirically or by other means that will be evident to those skilled in the art.
- sampling location will desirably be remote from the reaction site, that need not be so; i.e. , sampling may occur in situ, by projecting the radiation beam through the processing chamber itself.
- the radiation utilized for the species measurement will usually lie in the infrared spectral region, typically being generated by a hot body globar, a diode laser, or an LED.
- a Fourier Transform Infrared spectrometer may be employed to generate and modulate radiation in the selected spectral ranges, or a filter wheel, a tunable laser, a grating, or a prism absorption cell, coupled with a chopper wheel, may be utilized for that purpose.
- Focusing mirrors and/or lenses will normally be used for collecting the radiation and directing it along the beam path through the conduit and upon the detector.
- Suitable materi- als for fabrication of the corrosion-resistant windows include calcium fluoride, potassium bromide, potassium fluoride, and (preferably) barium fluoride, and although a LiTa0 3 detector will generally be utilized other detectors, such as MCT, lead salt, and DTGS devices, may be employed as appropriate and as may be desired.
- Signal interpretation may be carried out through classical least squares quantitation routines using, as the basis for comparison, nitrogen, vacuum, or nonabsorbing gas in the conduit; a library of spectra; or calibration runs.
- the signal processing means will comprise a logic circuit, data storage capacity, and appropriate electronics, and may for example take the form of an amplifier, a digitizer, and a computer programmed to carry out the necessary digital computations.
- the apparatus will be configured to detect SiF 4 in the analyte gas, that product being one of the species that are formed by the reaction of fluorine free radicals (present in the cleaning plasma) with the silicon material contaminant, and being characterized by strong absorption of radiation at 9.724 ⁇ m.
- FIG. 1 is a perspective view showing apparatus embodying the present invention, with associated components of a wafer processing tool;
- Figure 2 is an exploded perspective view, drawn to a reduced scale, of the apparatus of Figure 1.
- the illustrated apparatus consists of an infrared radiation source 10 (a globar) mounted in a holder 12, to which is attached a heat sink 14 (which is optional) .
- the holder 12 is mounted upon a source mirror housing 16, which contains a collimating mirror 18 supported on a source mirror holder 20.
- the filter sensor unit includes an endpoint instrument assembly mounting plate 22, which is mounted upon a detector mirror housing 24 and in turn contains a detector focussing mirror 26 supported upon a detector mirror holder 28.
- the housings 16, 24 are attached to a transverse section 30 formed on an offset conduit 32 of a vacuum flange, generally designated by the numeral 34, and the mirrors 18, 26 are aligned for optical communication through BaF 2 windows 36 provided at opposite ends of the transverse section 30; the windows 36 are held in place by retaining rings 38, and are sealed by VITON o-rings 40.
- KF40 connections 42 at the inlet and outlet ends of the conduit 32, enable attachment of the vacuum flange 34 to a wafer processing chamber 44 and an evacuation system 46, respectively.
- An end point instrument assembly 48 (shown diagrammatically) is supported on the mounting plate 22 and is enclosed within the cover 50.
- a beam of radiation B generated by the IR source 10 is collimated by the mirror 18 in the housing 16 and is projected through the transverse section 30 of the vacuum flange 34 and the BaF 2 windows 36 at the opposite ends thereof.
- the beam impinges upon the mirror 26 in the housing 24, and is focussed thereby upon a detector of the instrument assembly 48, passing through appropriate filters (as will be described more fully below) of which the assembly 48 is also comprised.
- the intensity of radiation sensed by the detector will of course be attenuated by any absorbing molecules contained within the gas stream flowing through the offset conduit 32 of the vacuum flange 34 from the processing chamber 44, under the influence of the vacuum system 46.
- an infrared filter-based instrument measures the concentration of SiF 4 produced during cleaning of the chamber of a high density plasma, chemical vapor deposition silicon wafer processing system.
- Unique to the present invention is the recognition that SiF 4 serves as a highly effective and definitive indicator of the clean or etch end point; i.e., when the SiF 4 concentration decreases to an undetectable or threshold level the cleaning or etching end point is deemed to have been reached.
- a two-filter IR sensor providing two spectral band passes, is employed.
- the center wavelength for one of the filters is selected to lie at 9.724 ⁇ m, which corresponds to a wavelength of strong SiF 4 absorption; the other filter functions at 9.09l ⁇ m, which corresponds to no significant absorption from the process gas.
- the unit includes three major parts: an IR source assembly, a vacuum gas cell that mounts into the processing chamber vacuum duct, and the IR sensor that determines continuously the SiF 4 concentra- tion during the chamber clean or wafer etch; a globar provides an active (hot) IR source, which allows specie detection without plasma emission.
- SiF 4 has unexpectedly been found to be perhaps the best indicator of the state of cleaning of the processing chamber; it absorbs light at 1028 cm '1 (9.714 ⁇ m) in direct proportion to its concentration. From the data collected it is anticipated that, if chamber cleaning is effected after each wafer is processed, the maximum percentage of light absorbed will be about 50% for the various doped and undoped silicon glasses.
- the current detection limit of the sensor, using a 7.925cm beam path, is about 3.0 mtorr; this corresponds to about 3.7 ⁇ mol, or about 2.2 x 10 18 molecules, of SiF 4 in the IR beam.
- filter spectrometry is employed to carry out the method of the invention.
- the filters used for the detection of SiF 4 are desirably found to have the following characteristics:
- Most mid-IR sources are hot, DC-powered glowers made from ceramic or metal alloy materials, which generally operate between 900° and 1500°C and (depending upon the size and temperature of the source) may require no cooling.
- One suitable source is a miniature tungsten carbide glower, operated at 10 volts and 1.8 amps and generating a surface temperature of between 1100° and 1200°C.
- the IR light may be collimated to increase light intensity passing through the sample and impinging upon the detector.
- a suitable front surface mirror design uses a one-inch, 90° off- axis aluminum parabola having an aluminum/MgF 2 surface coating; the IR source is placed at the focal point of the mirror for collimation.
- the IR source unit will usually be connected to one side of a conduit from the processing chamber.
- Optical transmission will most advantageously be accomplished using two 4-5 mm thick 25.4 mm BaF 2 windows, mounted on both sides of the flange; the base IR path length through the flange will typically be 3.12 inches.
- the radiation detector unit will be mounted to the adjacent side of the flange to complete the detection system.
- the IR light will be focussed, using a front surface mirror, and a mirror matching the source mirror will focus light into the detection housing. Modulation of the IR light is effect- ed using a chopper wheel measuring about 1.5 inch in diameter and spinning at 5 Hz, which wheel contains the two required optical filters (analyte and reference) , as described.
- Each filter allows transmission during approximately 25% of the chopper rotation cycle, with transmission being blocked during the remain- ing 50% of the cycle to achieve optimal modulation; the arrangement produces and on-off signal twice per rotation, one signal being the reference signal and the other being the analyte signal. The light then passes through a third filter to assure no out-of- band transmission of the IR radiation.
- a lithium tantalate (LiTa0 3 ) pyroelectric IR detector is employed, which is sensitive to thermal energy and is room temperature-compensated to correct for thermal drift. As the detector temperature changes (due to varying light intensity) , corresponding increases and decreases of polarization occur on the dielectric material, which in turn produce variations in charge flow.
- the detector functions most effectively at slower modulation frequencies, generally less than 10 Hz, and its window is designed to pass 80% of the IR light between 8 ⁇ m and 14 ⁇ m.
- the two signal amplitudes are collected by a lock-and-hold amplifier.
- the analyte signal is divided into the reference signal, and a log 10 value is computed on the quotient to produce the absorbance output signal.
- An absorbance value of 0.300 abs produces an output of 5 V above the baseline signal; as noted above, absorbance is approximately linearly proportional to the gas concentration.
- the entry of SiF 4 into the beam attenuates the analyte signal, resulting in the generation of a positive voltage response.
- two outputs with zero absorbance generating 0.1 and 1 V signals, will be employed.
- 5 V will be equivalent to 0.300 abs (about 380 mtorr SiF) ; the other signal will have a value ten times as great, i.e., 5 V will be equivalent to 0.030 abs (about 38 mtorr SiF 4 ) .
- the second signal will be driven to a 10 volt maximum when a high level of SiF 4 is present, and that once the concentration decreases below about 68 mtorr a signal having a different value will be observed.
- Other signals such as an integrator, may be added for summation of total SiF 4 removed, if so desired.
- a single optical filter can advantageously be used to collect the intensity value for a reference signal at a time when the indicator species is known to be absent from the beam path.
- the reference signal may be obtained from a spectral beam that contains wavelengths which are mostly not absorbed by components of the analyte gas thereby rendering insignificant the intensity contribution to the signal that is made by the highly absorbed "first" wavelength.
- etching of silicon and to the removal of silicon deposits, are intended to encompass compounds of silicon as well, provided of course that an indicator species is produced by reaction of the silicon with the etchant or cleaning agent (especially a fluorine-containing plasma or plasma product) .
- the present invention provides an apparatus and method for quickly, effectively, and accurately determining the end point, and other parameters and/or faults, of a process carried out at a reaction site and, in particular, the end point of etching of semiconductor wafers and devices comprised of silicon, and the cleaning of chambers used for processing of such wafers and articles.
- the end point or other parameter or fault is determined by analysis of the gaseous effluent from the processing chamber, i.e. , by optical analysis of the gas for the virtual absence, or significant change in concentration, of a silicon reaction product indicator species.
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- Immunology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL14005599A IL140055A0 (en) | 1998-06-12 | 1999-06-11 | Method and apparatus for determining processing chamber cleaning or wafer etching endpoint |
JP2000553766A JP2002517740A (en) | 1998-06-12 | 1999-06-11 | Method and apparatus for identifying process chamber clean or wafer etching endpoints |
EP99928616A EP1086353A4 (en) | 1998-06-12 | 1999-06-11 | Method and apparatus for determining processing chamber cleaning or wafer etching endpoint |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8908998P | 1998-06-12 | 1998-06-12 | |
US32952099A | 1999-06-10 | 1999-06-10 | |
US60/089,089 | 1999-06-10 | ||
US09/329,520 | 1999-06-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999064814A1 true WO1999064814A1 (en) | 1999-12-16 |
Family
ID=26780239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/013339 WO1999064814A1 (en) | 1998-06-12 | 1999-06-11 | Method and apparatus for determining processing chamber cleaning or wafer etching endpoint |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1086353A4 (en) |
JP (1) | JP2002517740A (en) |
IL (1) | IL140055A0 (en) |
WO (1) | WO1999064814A1 (en) |
Cited By (8)
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---|---|---|---|---|
US7479454B2 (en) | 2003-09-30 | 2009-01-20 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
CN101814425A (en) * | 2009-02-20 | 2010-08-25 | 株式会社岛津制作所 | Absorption spectrometric apparatus for semiconductor production process |
US8043438B2 (en) | 2003-03-14 | 2011-10-25 | National Institute Of Advanced Industrial Science And Technology | Device for cleaning CVD device and method of cleaning CVD device |
US8056257B2 (en) * | 2006-11-21 | 2011-11-15 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
DE102013101610B4 (en) * | 2013-02-19 | 2015-10-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Apparatus and method for remote detection of a non-infrared active target gas |
WO2018057397A1 (en) * | 2016-09-22 | 2018-03-29 | Applied Materials, Inc | Methods and apparatus for processing chamber cleaning end point detection |
GB2559245A (en) * | 2017-01-05 | 2018-08-01 | Fairtech Corp | Device for measuring gas dissociation degrees with an optical spectrometer |
WO2018222942A1 (en) * | 2017-06-01 | 2018-12-06 | Aecom (Delaware Corporation) | Quantum cascade laser trace-gas detection for in-situ monitoring, process control, and automating end-point determination of chamber clean in semiconductor manufacturing |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4264479B2 (en) * | 2003-03-14 | 2009-05-20 | キヤノンアネルバ株式会社 | Cleaning method for CVD apparatus |
JP4801709B2 (en) * | 2003-03-14 | 2011-10-26 | キヤノンアネルバ株式会社 | Film forming method using CVD apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095899A (en) * | 1976-03-01 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus for double-beaming in fourier spectroscopy |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
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- 1999-06-11 IL IL14005599A patent/IL140055A0/en unknown
- 1999-06-11 EP EP99928616A patent/EP1086353A4/en not_active Withdrawn
- 1999-06-11 JP JP2000553766A patent/JP2002517740A/en active Pending
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US8043438B2 (en) | 2003-03-14 | 2011-10-25 | National Institute Of Advanced Industrial Science And Technology | Device for cleaning CVD device and method of cleaning CVD device |
US7479454B2 (en) | 2003-09-30 | 2009-01-20 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
US8056257B2 (en) * | 2006-11-21 | 2011-11-15 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
CN101814425A (en) * | 2009-02-20 | 2010-08-25 | 株式会社岛津制作所 | Absorption spectrometric apparatus for semiconductor production process |
DE102013101610B4 (en) * | 2013-02-19 | 2015-10-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Apparatus and method for remote detection of a non-infrared active target gas |
WO2018057397A1 (en) * | 2016-09-22 | 2018-03-29 | Applied Materials, Inc | Methods and apparatus for processing chamber cleaning end point detection |
US10043641B2 (en) | 2016-09-22 | 2018-08-07 | Applied Materials, Inc. | Methods and apparatus for processing chamber cleaning end point detection |
GB2559245A (en) * | 2017-01-05 | 2018-08-01 | Fairtech Corp | Device for measuring gas dissociation degrees with an optical spectrometer |
GB2559245B (en) * | 2017-01-05 | 2020-05-20 | Fairtech Corp | Device for measuring gas dissociation degrees with an optical spectrometer |
WO2018222942A1 (en) * | 2017-06-01 | 2018-12-06 | Aecom (Delaware Corporation) | Quantum cascade laser trace-gas detection for in-situ monitoring, process control, and automating end-point determination of chamber clean in semiconductor manufacturing |
Also Published As
Publication number | Publication date |
---|---|
IL140055A0 (en) | 2002-02-10 |
JP2002517740A (en) | 2002-06-18 |
EP1086353A1 (en) | 2001-03-28 |
EP1086353A4 (en) | 2001-08-22 |
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