EP1535348A2 - Procede de production d'une diode pin integree et circuit associe - Google Patents

Procede de production d'une diode pin integree et circuit associe

Info

Publication number
EP1535348A2
EP1535348A2 EP03794789A EP03794789A EP1535348A2 EP 1535348 A2 EP1535348 A2 EP 1535348A2 EP 03794789 A EP03794789 A EP 03794789A EP 03794789 A EP03794789 A EP 03794789A EP 1535348 A2 EP1535348 A2 EP 1535348A2
Authority
EP
European Patent Office
Prior art keywords
region
substrate
area
layer
decoupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP03794789A
Other languages
German (de)
English (en)
Inventor
Karlheinz Müller
Johannes Karl Sturm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1535348A2 publication Critical patent/EP1535348A2/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Definitions

  • the invention relates to a method in which a pin diode carried by a carrier substrate is produced.
  • the pin diode contains a doped region of a first conductivity type close to the substrate with respect to the substrate, a doped region of another conductivity type remote from the substrate than the region close to the substrate and an undoped or arranged in comparison to the doping of the substrate close and in comparison to the doping of the substrate close Region or the region remote from the substrate provided with weak doping intermediate regions. Further areas can be arranged between the intermediate area and the area close to the substrate or between the intermediate area and the area remote from the substrate in order to improve the electrical properties of the pin diode.
  • a pin diode is a diode with a layer sequence p, i and n, where p is a highly p-doped region, i is an intrinsically conductive or intrinsic or only weakly n- or p-doped region and n is a highly n-doped region Name the area.
  • the pin junction differs from a pn junction primarily by the intrinsic or the weakly doped intermediate region. Because of their electrical properties, pin diodes are used as rectifier diodes for reverse voltages above one hundred volts. Another area of application is fast switching diodes in the microwave range.
  • this diode is also used as a radiation detector, e.g. in nuclear technology, or as a pin photodiode, especially for detecting light in the wavelength range between approximately four hundred nanometers - tern to about a micrometer. In particular, they have pin diodes high sensitivity and high acquisition speeds.
  • Integrated pin diodes have a higher detection sensitivity and a higher frequency bandwidth than single semiconductor components because they are monolithically connected directly to integrated circuits.
  • an associated integrated circuit arrangement is to be specified.
  • connection region is produced, which leads to the region close to the substrate.
  • the connection region is arranged in a layer containing the intermediate region and, in one embodiment, penetrates this layer from its interface remote from the substrate to its interface close to the substrate.
  • the region close to the substrate with respect to the layer containing the intermediate region is a so-called "buried" region, which is also referred to as a buried layer.
  • the method for producing a buried area is simpler.
  • the method according to the invention does not connect the pin diode via the substrate, but rather via at least one separate connection area.
  • a doped decoupling area is generated simultaneously with the area near the substrate.
  • a circuit arrangement carried by the carrier substrate is produced in such a way that the decoupling area extends between a part of the components and the carrier substrate.
  • This measure makes it possible to generate a decoupling area without additional process engineering effort, which, for example, shields circuit parts of the integrated circuit arrangement which cause interference from other circuit parts.
  • particularly sensitive circuit parts can also be shielded from the rest of the circuit.
  • parasitic currents cannot, for example, be impressed into the substrate by capacitive coupling.
  • parasitic currents or voltages for example, do not reach the sensitive circuit parts by capacitive coupling from the substrate.
  • a combination of both measures leads to improved shielding.
  • Highly disruptive circuit parts are, for example, digital
  • Circuits or power amplifiers are, for example, preamplifiers.
  • a connection area leading to the decoupling area is produced simultaneously with the connection area leading to the layer of the pin diode close to the substrate. This means that no additional process steps are required for the production of the decoupling area connection area.
  • the decoupling area can be set to a predetermined potential via the decoupling area connection area.
  • suction diodes can be generated via the decoupling area connection area, which draw interference voltages and interference currents from the integrated circuit arrangement. This possibility is explained in more detail below.
  • the decoupling area connection area and the decoupling area form a shielding trough, which completely or partially surrounds an area encompassed by the shielding trough, or at least fifty percent or even at least seventy-five percent in relation to the side surfaces and the base area of the encompassed area.
  • interruptions in the shielding are also possible, for example to enable simple process control for other reasons.
  • areas lying outside of these areas are provided with a doping of another conductivity type in the plane or in the layer in which the region of the pin diode and the decoupling area are located.
  • the area near the substrate and the decoupling area or individual decoupling areas in the plane or layer can be isolated from one another in a simple manner.
  • an oxide covering the area near the substrate and an oxide covering the decoupling area are used to mask an implantation. Compared to a lithography process, the process is simplified.
  • connection area leading to the region of the pin diode close to the substrate and the Coupling area-connecting area created to produce a deep trench which is preferably at least twice as deep as wide.
  • the trench has a depth of over ten micrometers, over fifteen micrometers or even over twenty micrometers.
  • the trench has a width of less than five micrometers, for example.
  • the connection regions are produced with the aid of a diffusion process in which dopants diffuse on an area remote from the substrate as far as the layer close to the substrate or up to the decoupling layer. With a diffusion length of ten micrometers, for example, the connection regions have a width of seven micrometers, for example. In comparison to the area occupied by the pin diode, however, such a width is an acceptable value with respect to the circuit area required.
  • Methods with implantations of one or more micrometers depth are also used to produce the connection areas.
  • the layer containing the intermediate region is produced using an epitaxy process.
  • the epitaxy process generates base material for at least one embedding area, which is used to embed components of the integrated circuit arrangement.
  • the embedding area is also referred to as a so-called bulk.
  • An epitaxial process is an easy way to create layers covering buried layers.
  • Doped semiconductor regions can also be produced in a simple manner by an epitaxy process, for example by in-situ doping when the epitaxial layer is grown.
  • connection region leading to the region of the pin diode close to the substrate completely comprises the intermediate region in the lateral direction. This measure allows the intermediate region to be electrically isolated in a simple manner from the other components of the integrated circuit arrangement.
  • the layer containing the intermediate area is a semiconductor layer, which preferably has areas with different conductivity types.
  • the semiconductor layer is based on a single crystalline material, e.g. on single crystal silicon.
  • solid-state semiconductors such as gallium arsenide, are also used.
  • the decoupling area borders on material with a different electrical conductivity type than the decoupling area. This measure creates pn diodes or np diodes, which have the function of suction diodes and suck off disruptive charge carriers or interference currents from the area adjacent to the decoupling area or prevent the currents from passing through to the area to be shielded due to a blocking effect.
  • the invention also relates to an integrated circuit arrangement with a PIN diode, which is produced with the method according to the invention or with one of its developments leaves.
  • the technical effects mentioned above also apply to the circuit arrangement and its further developments.
  • Figure 1 shows an integrated circuit arrangement with pin diode • and shielding trough
  • FIG. 1 shows an integrated circuit arrangement 10 which contains a p-doped substrate 12, a pin photodiode 14, a shielded region 16 or more shielded regions and a circuit region 18 or more unshielded circuit regions.
  • the substrate 12 is, for example, part of a semiconductor wafer, ie a wafer.
  • a buried n + region 20 and a buried n + region 22 were, for example, with the illustrated below with reference to Figure 2A process produces wherein n + denotes a high impurity concentration of dopants, resulting in an n-type conductivity , ie for example of arsenic or phosphorus.
  • n + denotes a high impurity concentration of dopants, resulting in an n-type conductivity , ie for example of arsenic or phosphorus.
  • the region 20 belongs to the photodiode 14, which is shown laterally interrupted in FIG.
  • the photodiode 14 has an extension of fifty micrometers.
  • an intermediate area 30 of the photodiode 14 which is weakly n-doped, ie n ⁇ .
  • the intermediate region 30 is completely laterally surrounded by an, for example, annular connection region 32, which is n-doped, but with a higher dopant concentration than that Intermediate region 30.
  • the connection region 32 is n + -doped at its section 34 remote from the substrate to ensure a low contact resistance.
  • Conductors 36 and 38 penetrate one or more metallization layers 40 of the integrated circuit arrangement 10 and lead to the section 34 of the connection area 32.
  • a p + -doped region 42 which forms the anode of the photodiode 14, is located on the intermediate region 30.
  • An interconnect 44 penetrates the metallization layers 40 and is connected to the area 42.
  • P-doped regions 48 to 54 of a layer 55, which also contains the intermediate region 30, are located in the same plane as the intermediate region 30.
  • the areas 48 and 50 adjoin the connection area 32 outside the photodiode 14.
  • the area 52 forms a so-called bulk or circuit substrate and is part of the shielded area 16.
  • the area 52 is delimited by a connection area 56, which is also ring-shaped, for example, which extends to the decoupling area 22 and the area 52 from the area 50 and 54 separates.
  • connection area 56 and the area 22 form a shielding trough, which provides functions of a suction diode operated in the blocking direction.
  • components with strong interference radiation for example an npn transistor 58 and further components 60, for example CMOS components (complementary metal oxide semiconductor) or with one or more passive components, such as coils.
  • the npn transistor 58 and devices 60 have been fabricated using standard manufacturing techniques.
  • the npn transistor 58 contains a buried collector connection region 62, which is heavily n-doped, ie n + , and leads to a collector region 64.
  • the collector region 64 is weakly n-doped, ie n " .
  • Above the collector region 64 there is a base region 66 which is heavily p-doped and an emitter region 68 which is heavily n-doped.
  • the metallization layers 40 are in the region of the transistor 58 for example penetrated by interconnects 70, 72 and 74, which lead in this order to the base region 66, to the emitter region 68 and to the collector connection region 62.
  • connection region 56 is likewise n-doped and has a section 76 which is remote from the substrate and is n + -doped.
  • Conductors 78 and 80 lead to the connection area 56 and serve, for example, to apply a positive operating voltage potential UP to the connection area 56 and thus also to the layer 22, which form the cathode of a suction diode operated in the reverse direction.
  • the suction diode completely shields noise currents that could get into the substrate 12.
  • the areas 52 and 54 are also referred to as p-well.
  • the area 18 of the integrated circuit arrangement contains a large number of electronic components 82, which are indicated by three points in FIG. Interferences generated by the transistor 58 and the components 60 cannot penetrate to the components 82 due to the shielding through the shielding trough formed from the connection region 56 and the region 22.
  • FIG. 1 also shows so-called field oxide regions 84 to 100, which consist for example of silicon dioxide and electrically isolate individual components or functional units of components from one another.
  • the interconnects in the metallization layers 40 connect different components of the integrated circuit arrangement 10, e.g. the photodiode 14 with a transistor.
  • FIG. 2A shows a first production stage in the production of the integrated circuit arrangement 10.
  • a silicon dioxide layer 110 is first produced on the substrate 12, for example by thermal oxidation.
  • the thickness of the silicon dioxide layer 110 is, for example, fifty nanometers.
  • a silicon nitride layer 112 is then deposited, which for example also has a thickness of fifty nanometers.
  • a lithography process is then performed to create an implantation mask for implanting dopants for layers 20 and 22.
  • a photoresist layer 114 is applied over the entire surface and structured in a subsequent exposure and development step in such a way that cutouts 116 and 118 arise above the areas in which the areas 20 and 22 are to be produced;
  • the silicon nitride layer 112 is then selectively removed from the silicon dioxide layer 110 in the areas not covered by the photoresist 114, for example in a dry etching process.
  • an ion implantation is carried out, for example in order to implant arsenic or antimony ions, see arrows 120.
  • the remaining portion of the photoresist layer 114 is removed.
  • Local oxidation is then carried out, thicker oxide regions 130 being found in the exposed regions of the silicon dioxide layer 110. be fathered.
  • the dopants in regions 20 and 22 are also activated during the oxidation.
  • the residues of the nitride layer 112 are then removed, for example with the aid of an etching process.
  • the regions 24 to 28 are then generated with the aid of an ion implantation 140.
  • boron is implanted. The energy during implantation is such that the boron ions do not penetrate the oxide regions 130.
  • regions of the silicon dioxide layer 110 are penetrated by the boron ions.
  • a layer 55 is applied to the layers 20 and 22 and the regions 24, 26 and 28 using an epitaxy method.
  • Layer 55 is weakly n-doped, for example.
  • the layer 55 has a thickness of ten micrometers.
  • the dopant concentration in layer 55 is, for example, 5-10 13 particles per cubic centimeter.
  • a thin silicon dioxide layer 152 is then applied to the layer 55.
  • a photoresist layer 154 is then applied in a lithography process and structured as a mask for a subsequent ion implantation.
  • Recesses 156 to 162 are produced in the photoresist layer 154 at the regions lying above the edges of the regions 20 and 22.
  • An ion implantation is then carried out, for example with phosphorus ions. The energy at the
  • Ion implantation is dimensioned such that the phosphorus ions do not penetrate the photoresist layer 154. Thus, the phosphorus ions only reach the original doping regions 164 to 170 directly under the cutouts 156 to 162. For example, the dopant concentration in the original doping regions 164 to 170 is 10 16 dopant particles per cubic Centimeter.
  • the ion implantation is represented by arrows 172 in FIG. 2D.
  • a diffusion process is then carried out, for example using a diffusion furnace.
  • the dopants diffuse from the original doping regions 164 to 170 to the regions 20 and 22, the connection regions 32 and 56 being formed.
  • the dopants, which lead to a p-type conduction in these regions 48, 50, 52 and 54, are also distributed within the regions 48, 50, 52 and 54.
  • a phosphor glass coating is used instead of the ion implantation in order to generate the doping regions.
  • connection regions 32 and 56 are not produced by diffusion, but rather by producing deep trenches, into which doped polysilicon or a metal is then introduced.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne entre autres un procédé permettant de produire une photodiode pin intégrée, qui contient une zone sous forme de tranchée (20) et une zone de connexion (32) menant jusqu'à la zone sous forme de tranchée (20). Ce procédé de production permet d'intégrer aisément la photodiode pin (14). Ladite invention permet en outre d'utiliser également des étapes du processus de production de la diode pin pour produire des cuvettes de blindage (22, 56).
EP03794789A 2002-09-05 2003-08-14 Procede de production d'une diode pin integree et circuit associe Ceased EP1535348A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10241156A DE10241156A1 (de) 2002-09-05 2002-09-05 Verfahren zum Herstellen einer integrierten pin-Diode und zugehörige Schaltungsanordnung
DE10241156 2002-09-05
PCT/DE2003/002740 WO2004025739A2 (fr) 2002-09-05 2003-08-14 Procede de production d'une diode pin integree et circuit associe

Publications (1)

Publication Number Publication Date
EP1535348A2 true EP1535348A2 (fr) 2005-06-01

Family

ID=31724383

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03794789A Ceased EP1535348A2 (fr) 2002-09-05 2003-08-14 Procede de production d'une diode pin integree et circuit associe

Country Status (7)

Country Link
US (1) US7297590B2 (fr)
EP (1) EP1535348A2 (fr)
JP (1) JP4344319B2 (fr)
CN (1) CN100492676C (fr)
DE (1) DE10241156A1 (fr)
TW (1) TWI247434B (fr)
WO (1) WO2004025739A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3105801A (en) 2000-01-24 2001-07-31 Trustees Of Tufts College Tetracycline compounds for treatment of cryptosporidium parvum related disorders
AU2001259701A1 (en) * 2000-05-15 2001-11-26 Paratek Pharmaceuticals, Inc 7-substituted fused ring tetracycline compounds
WO2001098236A2 (fr) * 2000-06-16 2001-12-27 Trustees Of Tufts College Composes de tetracycline 7-phenyl-substituee
WO2003055441A2 (fr) 2001-08-02 2003-07-10 Paratek Pharmaceuticals, Inc. Medicaments
DE102004031606B4 (de) * 2004-06-30 2009-03-12 Infineon Technologies Ag Integrierte Schaltungsanordnung mit pin-Diode und Herstellungsverfahren
US7259444B1 (en) * 2004-07-20 2007-08-21 Hrl Laboratories, Llc Optoelectronic device with patterned ion implant subcollector
TWI261038B (en) * 2004-08-11 2006-09-01 Bo-Cheng Chen Bicycle gear-shifting handgrip
EP1805134B1 (fr) 2004-10-25 2012-06-20 Paratek Pharmaceuticals, Inc. 4-aminotetracyclines et procedes d'utilisation
KR100723137B1 (ko) * 2005-11-24 2007-05-30 삼성전기주식회사 포토다이오드 소자 및 이를 이용한 광센서용 포토다이오드어레이
WO2008045507A2 (fr) 2006-10-11 2008-04-17 Paratek Pharmaceuticals, Inc. Composés de tétracycline substitués utilisés pour le traitement d'infections à bacillus anthracis
US8497167B1 (en) * 2007-01-17 2013-07-30 National Semiconductor Corporation EDS protection diode with pwell-nwell resurf
US7968959B2 (en) * 2008-10-17 2011-06-28 The United States Of America As Represented By The Secretary Of The Navy Methods and systems of thick semiconductor drift detector fabrication
US8518912B2 (en) 2007-11-29 2013-08-27 Actelion Pharmaceuticals Ltd. Phosphonic acid derivates and their use as P2Y12 receptor antagonists
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード

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JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
JPS6214478A (ja) * 1985-07-12 1987-01-23 Canon Inc フオトセンサ
US5355013A (en) * 1988-05-25 1994-10-11 University Of Hawaii Integrated radiation pixel detector with PIN diode array
JPH0779154B2 (ja) 1989-03-10 1995-08-23 シャープ株式会社 回路内蔵受光素子
JPH0555538A (ja) * 1991-08-23 1993-03-05 Victor Co Of Japan Ltd 半導体受光装置
JP2793085B2 (ja) * 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
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JP3855351B2 (ja) * 1997-04-10 2006-12-06 株式会社デンソー 光センサ
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Also Published As

Publication number Publication date
US7297590B2 (en) 2007-11-20
JP4344319B2 (ja) 2009-10-14
WO2004025739A2 (fr) 2004-03-25
CN1682380A (zh) 2005-10-12
JP2006502566A (ja) 2006-01-19
DE10241156A1 (de) 2004-03-18
CN100492676C (zh) 2009-05-27
TW200405583A (en) 2004-04-01
TWI247434B (en) 2006-01-11
WO2004025739A3 (fr) 2004-12-23
US20060008933A1 (en) 2006-01-12

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