EP1511081A2 - Anzeigevorrichtung und Herstellungsverfahren - Google Patents

Anzeigevorrichtung und Herstellungsverfahren Download PDF

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Publication number
EP1511081A2
EP1511081A2 EP04019744A EP04019744A EP1511081A2 EP 1511081 A2 EP1511081 A2 EP 1511081A2 EP 04019744 A EP04019744 A EP 04019744A EP 04019744 A EP04019744 A EP 04019744A EP 1511081 A2 EP1511081 A2 EP 1511081A2
Authority
EP
European Patent Office
Prior art keywords
light emitting
interlayer insulating
emitting device
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04019744A
Other languages
English (en)
French (fr)
Other versions
EP1511081B1 (de
EP1511081A3 (de
Inventor
Kaoru Tsuchiya
Aya Anzai
Masayuki Sakakura
Masaharu Nagai
Yutaka Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of EP1511081A2 publication Critical patent/EP1511081A2/de
Publication of EP1511081A3 publication Critical patent/EP1511081A3/de
Application granted granted Critical
Publication of EP1511081B1 publication Critical patent/EP1511081B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • Another structure of the present invention is a light emitting device according to the above structure, wherein at least a portion of a bottom face of the first opening and a portion of the bottom face of the second opening are formed in the same position on a face of the substrate.
  • Another structure of the present invention is a light emitting device according to the above structure, wherein a bottom face of the first opening and the bottom face of the second opening are formed in a different position on a face of the substrate.
  • Another structure of the present invention is a light emitting device according to the above structure, wherein at least one layer of the first interlayer insulating film and the second interlayer insulating film is made of an inorganic material.
  • Another structure of the present invention is a light emitting device comprising a light emitting element interposed between a pair of substrates, at least one of which is light transmitting, wherein the light emitting element is formed to be in contact with an interlayer insulating film, a side edge portion of the interlayer insulating film formed inside not to reach an edge portion of the substrate is processed into a tapered shape, an impermeable protective film is formed in the side edge portion of the interlayer insulating film, and the pair of substrates is fixed to each other with an impermeable composition in a region of the side edge portion of the interlayer insulating film or in an outer side of the region.
  • Another structure of the present invention is a light emitting device according to the above structure, wherein a semiconductor film is formed from a bottom portion of the interlayer insulating film to the edge portion of the substrate.
  • the sealant 107 made of an impermeable material is formed on an outer side of the end face of the interlayer insulating film covered with the protective film or is formed to cover the entire end face of the interlayer insulating film in fixing the opposing substrate 108, water entry can further be prevented. Therefore, improvement in reliability can be expected.
  • Embodiment Modes 2 and 3 it is a very effective means of preventing water entry to remove an interlayer insulating film on the periphery of a substrate and not to expose an end face of an interlayer insulating film to outer air as much as possible by covering the end face of the interlayer insulating film with a protective film 103 (and 105) and a sealant 107.
  • a protective film 103 and 105
  • a sealant 107 there may be a case that it is difficult to remove an entire interlayer insulating film, depending on a structure.
  • FIGS. 10C to 10F show examples of other conceivable structures for realizing this embodiment mode.
  • length of the interlayer insulating film between wirings gets longer even a little than the conventional structure in FIG. 10A, water entry can further be delayed than ever before.
  • a desired pattern may be formed depending on necessity.
  • a thin film of a nickel solution is formed on the surface of the semiconductor film by applying with a spinner a nickel acetate solution or a nickel nitrate solution containing nickel in a concentration of from 5 ppm to 10 ppm in terms of weight.
  • the nickel element may be sprayed on the whole surface of the semiconductor film by sputtering instead of application.
  • a catalytic element one of or a plurality of elements such as iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt (Co), platinum (Pt), copper (Cu), and gold (Au) may be used as well as nickel (Ni).
  • the fourth impurity region (P + region) and the fifth impurity region (P - region) are formed by once third doping; however, the invention is not exclusively limited to this.
  • the fourth impurity region (P + region) and the fifth impurity region (P - region) may be formed by multiple doping treatments according to each condition.
  • evaporation is performed with an evaporation source moving by using an evaporation apparatus.
  • evaporation is performed in a film formation chamber which is vacuum evacuated to 5 x 10 -3 Torr (0.665 Pa) or less, preferably to from 10 -4 Torr to 10 -6 Torr.
  • an organic compound is previously vaporized by resistance heating and flies in a direction of the substrate when a shutter is opened in evaporation.
  • the vaporized organic compound flies upwardly and is evaporated to the substrate through an opening provided for a metal mask to form a light emitting layer 244 (including a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer).
  • a shift register 500 In a row where a gate signal line is selected, a shift register 500 (SR) outputs a sampling pulse sequentially from a first stage in accordance with a clock pulse 504 and a start pulse 505.
  • a first latch circuit 501 takes in a video signal in timing with a sampling pulse being inputted, and the video signal taken in at each stage is stored in the first latch circuit 501.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
EP04019744.4A 2003-08-29 2004-08-19 Lichtemittierende Vorrichtung Expired - Lifetime EP1511081B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003347601 2003-08-29
JP2003347601 2003-08-29
JP2003322334 2003-09-12
JP2003322334 2003-09-12

Publications (3)

Publication Number Publication Date
EP1511081A2 true EP1511081A2 (de) 2005-03-02
EP1511081A3 EP1511081A3 (de) 2010-03-03
EP1511081B1 EP1511081B1 (de) 2019-10-09

Family

ID=34106978

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04019744.4A Expired - Lifetime EP1511081B1 (de) 2003-08-29 2004-08-19 Lichtemittierende Vorrichtung

Country Status (5)

Country Link
US (5) US7928654B2 (de)
EP (1) EP1511081B1 (de)
KR (2) KR101158830B1 (de)
CN (2) CN101483186B (de)
TW (6) TWI501690B (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1601031A1 (de) * 2004-05-28 2005-11-30 Samsung SDI Co., Ltd. Organisches lichtemittierendes Bauelement und dessen Herstellung
EP2105964A1 (de) 2008-02-28 2009-09-30 Samsung Mobile Display Co., Ltd. Organische lichtemittierende Anzeigevorrichtung
EP1814183A3 (de) * 2006-01-26 2011-05-25 Samsung Mobile Display Co., Ltd. Organische lichtemittierende Anzeigevorrichtung
EP2267780A3 (de) * 2009-06-26 2014-03-26 Mitsubishi Electric Corporation Bildanzeigevorrichtung und Herstellungsverfahren dafür
EP2267779A3 (de) * 2009-06-26 2014-03-26 Mitsubishi Electric Corporation Bildanzeigevorrichtung und Herstellungsverfahren dafür
US11372276B2 (en) 2014-11-26 2022-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device

Families Citing this family (62)

* Cited by examiner, † Cited by third party
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SG142140A1 (en) * 2003-06-27 2008-05-28 Semiconductor Energy Lab Display device and method of manufacturing thereof
US7928654B2 (en) 2003-08-29 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP4741177B2 (ja) * 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 表示装置の作製方法
KR100561646B1 (ko) * 2003-10-23 2006-03-20 엘지.필립스 엘시디 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US7183147B2 (en) * 2004-03-25 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
KR100681022B1 (ko) * 2004-06-16 2007-02-09 엘지전자 주식회사 유기 전계발광표시소자 및 그 제조방법
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
ATE476757T1 (de) * 2004-10-21 2010-08-15 Lg Display Co Ltd Organische elektrolumineszente vorrichtung und herstellungsverfahren
JP4870933B2 (ja) * 2005-03-04 2012-02-08 東北パイオニア株式会社 自発光パネルおよび自発光パネルの製造方法
US20060214564A1 (en) * 2005-03-24 2006-09-28 Hsi-Ming Chang Organic electroluminescent display and method for fabricating the same
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KR101147991B1 (ko) * 2005-06-23 2012-05-25 엘지디스플레이 주식회사 액정표시자치용 어레이 기판과 그 제조방법
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JP5207670B2 (ja) * 2006-07-19 2013-06-12 キヤノン株式会社 表示装置
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US7928654B2 (en) 2011-04-19
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TW201724909A (zh) 2017-07-01
CN1655370A (zh) 2005-08-17
US10903402B2 (en) 2021-01-26
TWI619405B (zh) 2018-03-21
KR101260294B1 (ko) 2013-05-03
CN101483186A (zh) 2009-07-15
TWI748211B (zh) 2021-12-01
TW201831046A (zh) 2018-08-16
KR20050021963A (ko) 2005-03-07
EP1511081B1 (de) 2019-10-09
US20050046346A1 (en) 2005-03-03
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US10367124B2 (en) 2019-07-30
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US9923127B2 (en) 2018-03-20
US8723417B2 (en) 2014-05-13
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US20110248313A1 (en) 2011-10-13
TW200518616A (en) 2005-06-01
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TWI407825B (zh) 2013-09-01
EP1511081A3 (de) 2010-03-03
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TW201601586A (zh) 2016-01-01
KR101158830B1 (ko) 2012-06-27

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