Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/10—Organic polymers or oligomers
  • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
  • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
  • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight

Definitions

• Silicon particles as additives to improve charge carrier mobility in organic semiconductors
• the invention relates to a semiconductor device with a semiconductor path made of an organic semiconductor material and a method for producing a semiconductor device.
• Semiconductor chips have found wide use in a wide variety of technical applications. However, their manufacture is still very complex and expensive. Silicon substrates can be thinned down to very thin layers, making them flexible. However, these methods are also very expensive, so that flexible or curved microchips are only suitable for demanding applications in which increased costs can be accepted.
• organic semiconductors offers the possibility of inexpensive manufacture of microelectronic semiconductor circuits on flexible substrates.
• One application is, for example, a thin film with integrated controls for liquid crystal displays.
• Another field of application is transponder technology, where so-called tags e.g. Information about a product is stored.
• Organic semiconductors are easily accessible and can be structured very easily, for example, by printing processes.
• the use of such organic semiconductors is currently still limited by the low mobility of the charge carriers in the organic polymeric semiconductors. This is currently a maximum of 1 to 2 cm 2 / Vs.
• the maximum operating frequency of transistors, and thus of the electronic circuit, is limited by the mobility of the charge carriers. Mobility in the order of 1CT 1 cm 2 / Vs is sufficient for driver applications in the manufacture of TFT active matrix displays. So far, however, the organic semiconductors are still suitable for high-frequency applications Not. For technical reasons, wireless information transmission (RF-ID systems) can only take place above a certain minimum frequency.
• RFID systems wireless information transmission
• carrier frequencies 125 kHz or 13.56 MHz are widespread.
• Such systems are used, for example, for the identification or identification of objects in smart cards, ident tags or electronic stamps.
• the electrical conductivity of many organic semiconductor materials can be increased by introducing suitable dopants.
• achieving positional selectivity when doping is problematic.
• the dopants are not bound to a specific position in the organic semiconductors and can move freely within the material. Even if the doping process can initially be restricted to a specific area, for example the areas around the source and drain contacts, one will occur later Migration of the dopants through the entire organic semiconductor layer under the influence of the electric field that is applied between the source and drain contacts in order to operate the transistor.
• Electrically semiconducting polymers are required, for example, in field effect transistors or electronic components that are based on a field effect.
• a description of such an arrangement can be found, for example, in MG Kane, J. Campi, MS Hammond, FP Cuomo, B. Greening, CD Sheraw, JA Nichols, DJ Gundlach, JR Huang, CC Kuo, L. Jia, H. Klauk, TM Jackson, IEEE Electron Device Letters, Vol. 21, No. 11 (2000), 534 or D. J. Gundlach, H. Klauk, C. D. Sheraw, C. C. Kuo, J. R. Huang, T. N. Jackson, 1999 International Electron Devices Meeting, December 1999.
• the object of the invention is therefore to provide a semiconductor device with a semiconductor path made of an organic semiconductor material which can be easily represented, the electrical properties of the organic semiconductor, in particular its electrical conductivity, being improved.
• the object is achieved with a semiconductor device having a semiconductor path comprising an organic Halbleiterma ⁇ TERIAL, wherein along the semiconductor path Halbleiterparti- kel and / or semiconductor clusters are contained in the organic semiconductor material.
• the arrangement of semiconductor particles and / or semiconductor clusters in the organic semiconductor material can significantly increase the mobility of the charge carriers in comparison to corresponding pure organic semiconductors.
• the conductivity of the organic semiconductor material depends on the proportion of the semiconductor particles and / or semiconductor clusters in the organic semiconductor material, and on the material from which the semiconductor particles and / or semiconductor clusters are made. If semiconductor particles and / or semiconductor clusters made of different materials are provided in the semiconductor path, the electrical conductivity is also influenced by the mixing ratio of the components. In this way, the electrical conductivity of the semiconductor path can be set to a desired value. In this way, for example, the threshold voltage and the turn-off behavior of transistors can be influenced, or the threshold voltage and the turn-off behavior of the transistors can be set by the type and amount of the semiconductor particles and / or semiconductor clusters used.
• a semiconductor path is a line path between two contacts that is made up of an organic semiconductor material.
• the charge carriers, electrons or holes, are injected into the semiconductor path at the first contact, pass through the semiconductor path and are extracted again from the conductor path at the second contact.
• along the semiconductor path means a direction or a path along which the charge carriers move from the first contact to the second contact.
• Semiconductor particles are understood to mean individual particles which consist of a semiconductor material, preferably an inorganic semiconductor material.
• the parti kel can have any shape in itself, that is spherical, plate-shaped or rod-shaped.
• the diameter of the particles is preferably from 2 nm to 100 ⁇ m, preferably from 2 to 100 nm.
• the semiconductor particles can be present as individual particles or can also form agglomerates from several particles.
• Semiconductor clusters are understood to mean compounds with at least three metal atoms, each of the metal atoms being chemically linked to at least two other metal atoms via a metal-metal bond.
• the metals of the semiconductor cluster can be the same or different.
• the metals can be stabilized at their free coordination sites by ligands, for example carbonyl or cyclopentadienyl groups.
• Elements of the subgroups for example Ru, Co, Rh, Pt, Au, Pd, or Fe, can preferably be used as metals in the semiconductor clusters.
• Element semiconductors from the IV group of the periodic table such as Si and Ge, and III / V semiconductors, such as GaAs or InP, Ilb / VI semiconductors, for example compounds of zinc or cadmium, can be used as semiconductors from which the semiconductor particles are constructed with oxygen, sulfur, selenium or tellurium, Ib-VII semiconductors such as CuCl and other semiconductors, such as certain modifications of S, Se, Te and P, or semiconductors made of compounds such as Cu 2 0, Ti0 2 , GaSe.
• the conductivity of the semiconductor materials can be influenced by a corresponding doping in order to obtain p-Si or n-Si, for example.
• suitable compounds are condensed aromatics, such as anthracene, tetrazene or pentazene, polymeric aromatic compounds, such as polyphenylenes or polynaphthalene derivatives, electrically semiconducting compounds based on polythiophene, for example poly-3-hexylthiophene-2, 5-diyl, or electrically semiconducting compounds based on polyvinylthiophene or polyaniline.
• other organic semiconductor compounds can also be used.
• the organic semiconductor materials can have a doping, for example camphorsulfonic acid or polystyrene sulfonic acid.
• the materials used for the production of the semiconductor section of the semiconductor device according to the invention are easily accessible and some of them can also be obtained from commercial suppliers.
• the organic semiconductor materials or precursors for the production of the organic semiconductor materials are mostly readily soluble in organic solvents. Solutions or suspensions can also be produced from the semiconductor particles or semiconductor clusters.
• the surface of the semiconductor particles can also be modified, for example by coordinating nonpolar alkyl chains via a corresponding group to the surface of the nanoparticles.
• the components of the semiconductor path, organic semiconductors and semiconductor particles and / or semiconductor clusters can therefore be provided in dissolved form or as a suspension and applied to a substrate in liquid form.
• the semiconductor path of the semiconductor device according to the invention can be produced, for example, by simple printing processes, which considerably simplifies and reduces the cost of producing the semiconductor element.
• the semiconductor particles and / or semiconductor clusters bring about a considerable reduction in the contact resistance. If the particle material and the material of the contacts have different work functions for the charge carriers, asymmetrical diffusion processes of charge carriers occur on the contact surface between the particles on the one hand and the material of the contacts on the other. The resulting interface potential between the particles and the contact material is compensated for at very short distances, a few tenths of a nanometer, because of the high electrical conductivities in the two materials.
• the semiconductor particles and / or the semiconductor clusters are preferably statistically distributed in the volume of the organic semiconductor material.
• the semiconductor particles and / or the semiconductor clusters are distributed uniformly throughout the organic semiconductor material.
• the organic semiconductor material and the semiconductor particles or the semiconductor clusters can be dissolved in a common solvent and applied together on a substrate.
• organic semi ⁇ conductor material and to make semiconductor particles or semiconductor clusters in separate solutions or suspensions ready and simultaneously apply the solutions to a substrate in the production of the semiconductor path. After the solvent has evaporated, the semiconductor particles and / or semiconductor clusters are fixed in the organic semiconductor material, the semiconductor particles or semiconductor clusters no longer migrating even under the influence of an electric field.
• the semiconductor particles and / or the semiconductor clusters are arranged essentially on a surface along the semiconductor path made of the organic semiconductor material.
• the semiconductor path can be produced in such a way that a layer of semiconductor particles or semiconductor clusters is first applied to a substrate and a layer made of the organic semiconductor material is applied to the layer of semiconductor particles or semiconductor clusters.
• the procedure can also be carried out in the reverse order, a layer of an organic semiconductor material being first produced on a substrate and then the semiconductor particles or semiconductor clusters being deposited on an exposed surface of the organic semiconductor material opposite the substrate.
• the semiconductor particles or semiconductor clusters are preferably arranged in such a way that the contact areas between the first or second contact and organic semiconductor material are also covered by the semiconductor particles or semiconductor clusters. The area on which the semiconductor particles and / or the semiconductor clusters are arranged thus generally extends between the first and second contact.
• the semiconductor particles and / or semiconductor clusters are connected by linker molecules.
• Linker molecules are molecules that have at least two groups that can coordinate to the surface of a semiconductor particle or a semiconductor cluster.
• the linker molecules preferably have a between the functional groups arranged conjugated ⁇ electron system.
• the linker molecules open up further conduction paths within the organic semiconductor material, so that the conduction properties of the semiconductor path can be further improved.
• the linker molecules further fix the semiconductor particles or semiconductor clusters within the organic semiconductor material.
• the linker molecules can be bound to the surface of a semiconductor particle or semiconductor cluster via coordinative bonds, for which purpose the linker molecule has, for example, thiol groups or amino groups.
• the linker molecules are preferably connected to the semiconductor particle and / or the semiconductor cluster by a covalent bond.
• Such semiconductor particles can be obtained by first activating the surface of the semiconductor particles, e.g. by chlorination, and the activated semiconductor particles are then reacted with suitable ligands, e.g. Thiols, alcohols, amines or carbanions.
• the semiconductor particles and / or semiconductor clusters are preferably isolated or arranged in the organic semiconductor material as isolated agglomerates of semiconductor particles and / or semiconductor clusters.
• the average distance between the nanoparticles and / or nanoclusters or agglomerates of nanoparticles or nanoclusters can be selected within wide ranges. An average distance in a range from approximately 0.1 nm to 5000 nm is suitable, for example.
• the semiconductor properties of the semiconductor path are essentially determined by the organic semiconductor material, the electrical conductivity properties of the organic semiconductor material being modified by the addition of semiconductor particles and / or semiconductor clusters.
• the proportion of semiconductor particles and / or semiconductor clusters in the Semiconductor path is therefore preferably chosen to be less than 50% by volume.
• the semiconductor device is preferably designed as a transistor.
• the semiconductor path is supplemented by a source, drain and gate electrode to form a transistor.
• a material with high conductivity can preferably be selected as the material for the contacts. Suitable are, for example, electrically conductive metals, such as gold, titanium or palladium, or also an electrically conductive polymer, such as, for example, polyaniline doped with camphorsulfonic acid or poly (dioxyethylene) thiophene doped with polystyrene sulfonic acid.
• the contact material should have the highest possible electrical conductivity.
• Conventional materials such as silicon dioxide, aluminum oxide or an insulating polymer such as polystyrene, polyethylene, polyester, polyurethane, polycarbonate, polyacrylate, polyimide, polyether, polybenzoxazoles or mixtures of these compounds can be used to isolate the gate electrode.
• an insulating polymer such as polystyrene, polyethylene, polyester, polyurethane, polycarbonate, polyacrylate, polyimide, polyether, polybenzoxazoles or mixtures of these compounds can be used to isolate the gate electrode.
• the semiconductor element according to the invention can be produced very inexpensively from readily accessible materials and is therefore particularly suitable for use in devices which are subject to high cost pressures, such as labels for labeling goods.
• the invention therefore also relates to a method for producing the semiconductor device described above, wherein a solution or suspension of an organic semiconductor and of semiconductor particles and / or semiconductor clusters is produced in a solvent, the solution is applied to a substrate and the solvent is evaporated to obtain a Semiconductor path, and the semiconductor path is supplemented by further components to form a semiconductor element.
• the semiconductor particles and / or semiconductor clusters evenly distributed in the organic semiconductor of the semiconductor path.
• the common solution of organic semiconductor material and semiconductor particles or semiconductor clusters can first be produced and then applied to the substrate.
• the semiconductor particles or the semiconductor clusters are thus embedded in the volume of the organic semiconductor material.
• a first solution of an organic semiconductor is produced in a solvent, and a second solution or suspension of semiconductor particles and / or semiconductor clusters in a solvent, so that separate solutions of organic semiconductor material or Semiconductor particles and / or semiconductor clusters are used.
• the solvents of the two solutions or suspensions can be the same or different.
• a substrate is then provided, as in the embodiment described above, and a layer stack is produced on the substrate from at least a first and a second layer, the one of the first and second layers being produced from the first solution and the other layer from the second solution so that a semiconductor path is obtained.
• the semiconductor path is then supplemented by further components to form a semiconductor device.
• Inflexible substrates such as glass or quartz supports, for example, can be used as the substrate in the manufacture of the semiconductor device according to the invention also silicon wafers.
• flexible substrates are preferably used, such as, for example, plastic films made of, for example, polystyrene, polyethylene, polyester, polyurethane, polycarbonate, polyacrylate, polyimide, polyether or polybenzoxazoles or also paper.
• Components of the semiconductor device for example source, drain and gate electrodes, can already be defined on the substrate, the gate electrode being insulated with a corresponding gate dielectric.
• the solution or solutions which contain the organic semiconductor material or the semiconductor particles and / or semiconductor clusters are then placed on the substrate.
• the problem can be solved, for example, by spin coating, spraying, dipping or preferably by printing. If a layer of semiconductor particles is first produced on the substrate, these can also be deposited, for example, by vapor deposition.
• organic semiconductor material and semiconductor particles or semiconductor clusters can be applied to the substrate together or in order to produce a layer structure. To produce a layer structure, either the organic semiconductor material can first be applied to the substrate and then a layer of semiconductor particles or semiconductor clusters can be applied to the layer of organic semiconductor material, or a layer of semiconductor particles or semiconductor clusters can first be deposited on the substrate and a layer of the organic semiconductor material is applied to the layer of semiconductor particles or semiconductor clusters.
• the semiconductor path is completed to form a semiconductor element, for example by defining and depositing insulating layers or contacts on the semiconductor path.
• the semiconductor element is then integrated into a corresponding circuit via conductor tracks.
• the linker molecules can preferably be placed in a separate solution, so that the nanoparticles and the linker molecules form a network on the substrate by coordination, in which the semiconductor particles and / or the semiconductor clusters each represent branch points.
• the semiconductor particles arranged in the organic semiconductor need not be completely crosslinked by linker molecules. It is also possible for only some of the semiconductor particles to be crosslinked by linker molecules and for free semiconductor particles to be arranged in the organic semiconductor in addition to the crosslinked semiconductor particles.
• the nanoparticles can either be applied directly, or a solution can first be generated from a soluble precursor of the particle material and the nanoparticles can then only be generated after the deposition, for example by coagulation.
• the semiconductor particles and / or semiconductor clusters can also be surface-functionalized first, for example by coordinating alkyl chains to the surface of the semiconductor particles and / or semiconductor clusters via corresponding functional groups , It is also possible to first activate the surface of the semiconductor particles and / or semiconductor clusters and then to implement them with a surface-functionalizing compound in order to covalently bind the surface-functionalizing compound to the semiconductor particle and / or the semiconductor cluster.
• the same methods and materials can be used for this, as explained above for the linker molecules.
• the invention is explained in more detail below with reference to an accompanying drawing and examples. It shows:
• FIG. 1 shows embodiments of the semiconductor device according to the invention, the semiconductor particles being statistically distributed in the organic semiconductor material
• FIG. 2 shows embodiments of the semiconductor device according to the invention, semiconductor particles being arranged along a surface of the semiconductor path;
• FIG 3 shows an embodiment of the semiconductor device according to the invention, in which the semiconductor particles are linked by linker molecules
• Fig. 6 is a graph in which the charge carrier mobility is shown for different field effect transistors.
• FIG. 1 shows two embodiments of a transistor which comprises a semiconductor path 1 which is arranged between a source electrode 2 and a drain electrode 3.
• the formation of a charge carrier channel can be controlled by the field of the gate electrode 4, which is insulated by a dielectric 5 from the semiconductor path 1 or source electrode 2 and drain electrode 3.
• source electrode 2 and drain electrode 3 are arranged together with the semiconductor path 1 directly on the dielectric, while in the arrangement shown in FIG. 1b, the source electrode 2 and drain electrode 3 are arranged as top electrodes on the layer of the semiconductor path 1.
• the semiconductor path 1 is constructed from an organic semiconductor material 6, which forms a continuum between the source electrode 2 and the drain electrode 3.
• Semiconductor particles 7 are embedded in the semiconductor material 6.
• the semiconductor particles 7 or agglomerates of semiconductor particles formed from a plurality of semiconductor particles 7a to d are arranged in isolation from one another.
• the semiconductor particles 7 are statistically arranged in the volume of the organic semiconductor material 6 or the semiconductor path 1.
• the contact resistance for the transfer of charge carriers between the source electrode 2 or drain electrode 3 and the organic semiconductor material 6 can be significantly reduced by semiconductor particles 7f, 7g arranged adjacent to the surface 2a of the source electrode 2 or the surface 3a of the drain electrode 3.
• FIG. 2 shows a further possibility of arranging the semiconductor particles 7 and the organic semiconductor material 6.
• the structure of the transistors shown in FIGS. 2a and 2b corresponds to the structure described in FIGS. 1a and 1b.
• the semiconductor particles 7 are not distributed statistically in the volume of the organic semiconductor material 6, but rather along a surface 8 of the semiconductor path 1.
• the surface 8 corresponds to the interface between organic semiconductor material 6 and the dielectric 5 and also includes the surface sections 2a and 3a, which are formed between the source electrode 2 and the semiconductor path 1 or drain electrode 3 and the semiconductor path 1.
• the semiconductor particles 7 are arranged at a distance from one another along this surface.
• the semiconductor particles 7f, 7g arranged on the surfaces 2a and 3a in turn can reduce the contact resistance for the transfer of charge carriers between the source electrode 2 and the semiconductor path 1 or the semiconductor path 1 and the drain electrode 3.
• the semiconductor particles 7 are arranged along a surface 8 of the semiconductor path 1, which is arranged opposite the dielectric 5.
• the organic semiconductor material 6 is first deposited on the dielectric 5 and, after the formation of a layer of the organic semiconductor material 6, the semiconductor particles 7 are deposited on the upper side of this layer.
• the source electrode 2 and drain electrode 3 are shown, so that the semiconductor path 1 is supplemented to form a field effect transistor.
• semiconductor particles 7f, 7g are arranged on the contact surfaces 2a and 3a in order to reduce the charge transfer between the source electrode 2 and organic semiconductor material 6 or organic semiconductor material 6 and drain electrode 3.
• the arrangements of field effect transistors shown in FIG. 3 correspond to the arrangements shown in FIGS. 1A and 1B.
• the semiconductor particles 7 are statistically distributed in the volume of the semiconductor path 1.
• linker molecules 9 are provided, by means of which neighboring semiconductor particles 7 are covalently linked.
• the semiconductor particles 7 and the linker molecules 9 do not have to form a continuous network.
• Si particles used in the aforementioned examples were produced by methods as described in the following references 1 to 3.
• KSi potassium silicide
• the activated nanoparticles can be placed in an inert dry solvent under a dry argon atmosphere
• Example 2 5 g of the chlorine-activated microparticles obtained in Example 1 are quenched in a fluidized bed reactor under a nitrogen atmosphere at 150 ° C. with 300 ml of 1-butanol. After cooling to room temperature, a suspension of butoxy-functionalized microparticles in butanol is obtained, which are isolated as a gray-brown powder by washing with water and subsequent drying under reduced pressure.
• Example 4 5 g of the chlorine-activated nanoparticles obtained in Example 4 are suspended in 100 ml of diethyl glycol in a round-bottom flask equipped with a reflux condenser and an argon purge, and 10 ml of 1-butanol are slowly added. The mixture is then cooled at room temperature for 12 hours. The mixture is taken up in n-hexane and washed three times with water. The hexane phase is dried and the solvent is distilled off under reduced pressure.
• Example 2 4 g of the chlorine-activated nanoparticles obtained in Example 2 are suspended in 70 ml of diethyl glycol in a round-bottom flask equipped with a reflux condenser and an argon purge, and 12 ml of 2.5M butyllithium in hexane are slowly added. The mixture is then stirred at room temperature for 12 hours. The mixture is taken up in hexane and washed three times with water. The organic phase is dried and the solvent is distilled off.
• Example 4 5 g of the chlorine-activated nanoparticles obtained in Example 4 are suspended in 100 ml of diethyl glycol in a round-bottom flask equipped with a reflux condenser and argon purge, and 10 ml of 1,4-butanediol are slowly added. The mixture is then stirred at room temperature for 12 hours. The mixture is filtered and washed three times with water and twice with methanol. After drying in vacuo, 5.1 g of brown powder are obtained.
• Example 2 5 g of the chlorine-activated microparticles obtained in Example 1 are quenched in a fluidized bed reactor and in a nitrogen atmosphere at 150 ° C. with 15 ml of 1,4-dimercaptobutane. After cooling to room temperature, the product is washed with 100 ml of diethyl glycol from the reactor cell. A gray-brown powder is isolated by washing with water and then drying in vacuo:
• Example 5 0.5 g of the chlorine-activated nanoparticles obtained in Example 5 are suspended in 50 ml of diethyl glycol in a round-bottom flask equipped with a reflux condenser and an argon purge, and 3 ml of 2.0 M hexylmagnesium bromide in ether are slowly added. The mixture is then stirred at room temperature for a further 12 hours. The mixture is filtered and extracted three times with water and twice with n-hexane. After drying the hexane phase and distilling off the solvent under reduced pressure, 80 mg of brown powder are obtained.
• Example 12 20 mg of the butyl-functionalized silicon nanoparticles obtained in Example 12 are dissolved in a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 2.5 ml of chloroform. The solution is applied with a syringe to a silicon wafer prepared with transistor structures (bottom contact) and spun at 2000 revolutions per minute. The film is then annealed at 75 ° C under a nitrogen atmosphere for 4 minutes.
• Example 18 20 mg of the hexyl-functionalized silicon nanoparticles obtained in Example 14 are dissolved in a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 2.5 ml of chloroform. The solution is applied with a syringe to a silicon wafer prepared with transistor structures (bottom contact) and spun out at 2000 rpm. The film is then annealed at 75 ° C. under a nitrogen atmosphere for 4 minutes.
• Example 18 20 mg of the hexyl-functionalized silicon nanoparticles obtained in Example 14 are dissolved in a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 2.5 ml of chloroform. The solution is applied with a syringe to a silicon wafer prepared with transistor structures (bottom contact) and spun out at 2000 rpm. The film is then annealed at 75 ° C. under a nitrogen atmosphere for 4 minutes.
• Example 18 20 mg of the he
• Example 14 40 mg of the hexyl-functionalized silicon nanoparticles obtained in Example 14 are dissolved in a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 3.5 ml of chloroform. The solution is applied with a syringe to a silicon wafer prepared with transistor structures (bottom contact) and spun out at 2000 rpm. The film is then annealed at 75 ° C under a nitrogen atmosphere for 4 minutes.
• Example 14 10 mg of the hexyl-functionalized silicon nanoparticles obtained in Example 14 are dissolved in a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 2 ml of chloroform. The solution is applied with a syringe to a silicon wafer prepared with transistor structures (bottom contact) and spun out at 2000 rpm. The film is then annealed at 75 ° C. under a nitrogen atmosphere for 4 minutes.
• Example 10 20 mg of the hexyl-functionalized silicon microparticles obtained in Example 10 are suspended in a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 2.5 ml of chloroform. This suspension is applied with a syringe to a silicon wafer prepared with transistor structures (bottom contact) and spun out at 2000 rpm. The film is then annealed at 50 ° C for 4 minutes under a nitrogen atmosphere.
• a milliliter of a solution of 20 mg of the hexyl-functionalized silicon nanoparticles in 1.5 ml of chloroform obtained in Example 14 is placed with a syringe on a silicon wafer prepared with transistor structures (bottom contact) and spun at 2000 rpm. The film is then annealed at 75 ° C for 4 minutes under a nitrogen atmosphere. Then one milliliter of a solution of 20 mg of poly-3-hexylthiophene-2,5-diyl in 2.5 ml of chloroform is added to this layer and spun at 2000 rpm. The film is then annealed at 75 ° C for 4 minutes under a nitrogen atmosphere.
• the current-voltage characteristics are determined for the field effect transistors produced in Examples 17 to 19.
• the characteristic curve of a transistor was determined which contained poly-3-hexylthiophene-2,5-diyl (PHT) as an active component without the addition of inorganic particles.
• Example 21 The current-voltage characteristics of the field effect transistor produced in Example 21 and, in comparison, the characteristic of a transistor with poly-3-hexylthiopen-2, 5-diyl (PHT) as an active component without the addition of inorganic particles, which were produced under the same conditions had been determined.
• the current-voltage characteristic is shown in FIG. 5.
• the mobilities of the charge carriers were determined with the field effect transistors used in Examples 23 and 24.
• a field effect transistor was used, which comprises poly-3-hexylthiphene-2,5-diyl (PHT) as an active component without the addition of inorganic particles.
• PHT poly-3-hexylthiphene-2,5-diyl
• the charge carrier mobilities are shown in FIG. 6. In all the cases described, the charge carrier mobility improves by at least a factor of 2.

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