FR2918797B1 - Transistor organique a effet de champ et procede de fabrication de ce transistor - Google Patents

Transistor organique a effet de champ et procede de fabrication de ce transistor

Info

Publication number
FR2918797B1
FR2918797B1 FR0705096A FR0705096A FR2918797B1 FR 2918797 B1 FR2918797 B1 FR 2918797B1 FR 0705096 A FR0705096 A FR 0705096A FR 0705096 A FR0705096 A FR 0705096A FR 2918797 B1 FR2918797 B1 FR 2918797B1
Authority
FR
France
Prior art keywords
transistor
manufacturing
field effect
organic field
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0705096A
Other languages
English (en)
Other versions
FR2918797A1 (fr
Inventor
Mohamed Benwadih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOFILETA SA
Original Assignee
SOFILETA SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0705096A priority Critical patent/FR2918797B1/fr
Application filed by SOFILETA SA filed Critical SOFILETA SA
Priority to JP2010515583A priority patent/JP2010533372A/ja
Priority to EP08826858A priority patent/EP2168182A2/fr
Priority to PCT/FR2008/051330 priority patent/WO2009016301A2/fr
Priority to CN200880024601.9A priority patent/CN101779307B/zh
Priority to BRPI0812454-0A2A priority patent/BRPI0812454A2/pt
Priority to KR1020107002844A priority patent/KR101474335B1/ko
Publication of FR2918797A1 publication Critical patent/FR2918797A1/fr
Application granted granted Critical
Publication of FR2918797B1 publication Critical patent/FR2918797B1/fr
Priority to US12/628,415 priority patent/US8258504B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
FR0705096A 2007-07-13 2007-07-13 Transistor organique a effet de champ et procede de fabrication de ce transistor Expired - Fee Related FR2918797B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0705096A FR2918797B1 (fr) 2007-07-13 2007-07-13 Transistor organique a effet de champ et procede de fabrication de ce transistor
EP08826858A EP2168182A2 (fr) 2007-07-13 2008-07-15 Transistor organique à effet de champ et procédé de fabrication de ce transistor
PCT/FR2008/051330 WO2009016301A2 (fr) 2007-07-13 2008-07-15 Transistor organique à effet de champ et procédé de fabrication de ce transistor
CN200880024601.9A CN101779307B (zh) 2007-07-13 2008-07-15 有机场效应晶体管和制造该晶体管的方法
JP2010515583A JP2010533372A (ja) 2007-07-13 2008-07-15 有機電界効果トランジスタおよびこのトランジスタを製作する方法
BRPI0812454-0A2A BRPI0812454A2 (pt) 2007-07-13 2008-07-15 Transistor de efeito de campo orgânico e processo para produção do mesmo
KR1020107002844A KR101474335B1 (ko) 2007-07-13 2008-07-15 유기 전계효과 트랜지스터 및 이 트랜지스터의 제조방법
US12/628,415 US8258504B2 (en) 2007-07-13 2009-12-01 Organic field-effect transistor and method of fabricating this transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0705096A FR2918797B1 (fr) 2007-07-13 2007-07-13 Transistor organique a effet de champ et procede de fabrication de ce transistor

Publications (2)

Publication Number Publication Date
FR2918797A1 FR2918797A1 (fr) 2009-01-16
FR2918797B1 true FR2918797B1 (fr) 2009-11-06

Family

ID=39033859

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0705096A Expired - Fee Related FR2918797B1 (fr) 2007-07-13 2007-07-13 Transistor organique a effet de champ et procede de fabrication de ce transistor

Country Status (8)

Country Link
US (1) US8258504B2 (fr)
EP (1) EP2168182A2 (fr)
JP (1) JP2010533372A (fr)
KR (1) KR101474335B1 (fr)
CN (1) CN101779307B (fr)
BR (1) BRPI0812454A2 (fr)
FR (1) FR2918797B1 (fr)
WO (1) WO2009016301A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008036063B4 (de) * 2008-08-04 2017-08-31 Novaled Gmbh Organischer Feldeffekt-Transistor
JP2010040897A (ja) * 2008-08-07 2010-02-18 Sony Corp 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器
EP2571044A1 (fr) * 2010-05-12 2013-03-20 Teijin Limited Pellicule semi-conductrice organique et son procédé de fabrication, et tampon pour impression de contact
KR102051338B1 (ko) 2012-04-05 2019-12-03 노발레드 게엠베하 유기 전계 효과 트랜지스터 및 이를 제조하기 위한 방법
EP2790238B1 (fr) 2013-04-10 2018-08-22 Novaled GmbH Transistor à effet de champ organique et procédé de production
CN109946349B (zh) * 2019-04-02 2021-10-29 武汉轻工大学 有机场效应晶体管及其制备方法以及生物胺气敏传感器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4419425B2 (ja) * 2002-04-22 2010-02-24 コニカミノルタホールディングス株式会社 有機薄膜トランジスタ素子
DE10219121A1 (de) * 2002-04-29 2003-11-27 Infineon Technologies Ag Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP2005045188A (ja) * 2003-07-25 2005-02-17 Fuji Xerox Co Ltd 電子素子、集積回路およびその製造方法
KR101007813B1 (ko) * 2003-11-24 2011-01-14 삼성전자주식회사 완충층을 포함하는 유기박막 트랜지스터
JP2005223048A (ja) * 2004-02-04 2005-08-18 Ricoh Co Ltd 半導体装置、半導体装置の製造方法、および表示装置
JP4304275B2 (ja) * 2004-03-24 2009-07-29 独立行政法人産業技術総合研究所 有機半導体薄膜トランジスタ
US7692184B2 (en) * 2004-03-24 2010-04-06 Japan Science And Technology Agency Substrate with organic thin film, and transistor using same
CN1953935B (zh) * 2004-05-14 2010-05-05 索尼德国有限责任公司 包括碳纳米管和金属碳酸盐的复合材料
JP2006008454A (ja) * 2004-06-25 2006-01-12 Fuji Xerox Co Ltd 炭素微粒子構造体とその製造方法、およびこれを製造するための炭素微粒子転写体と炭素微粒子構造体製造用溶液、並びに炭素微粒子構造体を用いた炭素微粒子構造体電子素子とその製造方法、そして集積回路
JP4569207B2 (ja) * 2004-07-28 2010-10-27 ソニー株式会社 電界効果型トランジスタの製造方法
KR100667935B1 (ko) * 2004-11-23 2007-01-11 삼성에스디아이 주식회사 유기 박막 트랜지스터, 그 제조방법 및 유기 박막트랜지스터를 구비한 평판 표시 장치
US7719496B2 (en) 2004-11-23 2010-05-18 Samsung Mobile Display Co., Ltd. Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor
JP5041267B2 (ja) * 2005-01-20 2012-10-03 富士電機株式会社 薄膜電界効果トランジスタ、およびその製造方法
KR101102222B1 (ko) * 2005-02-04 2012-01-05 삼성전자주식회사 전기장 처리를 이용한 유기 박막 트랜지스터의 제조방법
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US20060273303A1 (en) * 2005-06-07 2006-12-07 Xerox Corporation. Organic thin film transistors with multilayer electrodes
JP5015438B2 (ja) * 2005-08-30 2012-08-29 独立行政法人理化学研究所 薄膜トランジスタおよびその製造方法
KR101212152B1 (ko) * 2005-12-29 2012-12-13 엘지디스플레이 주식회사 유기박막트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
KR101474335B1 (ko) 2014-12-18
FR2918797A1 (fr) 2009-01-16
JP2010533372A (ja) 2010-10-21
KR20100055409A (ko) 2010-05-26
EP2168182A2 (fr) 2010-03-31
WO2009016301A2 (fr) 2009-02-05
CN101779307A (zh) 2010-07-14
US20100096625A1 (en) 2010-04-22
BRPI0812454A2 (pt) 2014-12-02
US8258504B2 (en) 2012-09-04
WO2009016301A3 (fr) 2009-04-16
CN101779307B (zh) 2012-12-12

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