EP1464075A2 - Dispositif et procede de traitement de substrats en forme de disque - Google Patents

Dispositif et procede de traitement de substrats en forme de disque

Info

Publication number
EP1464075A2
EP1464075A2 EP02796697A EP02796697A EP1464075A2 EP 1464075 A2 EP1464075 A2 EP 1464075A2 EP 02796697 A EP02796697 A EP 02796697A EP 02796697 A EP02796697 A EP 02796697A EP 1464075 A2 EP1464075 A2 EP 1464075A2
Authority
EP
European Patent Office
Prior art keywords
nozzles
fluid
nozzle
rotation
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02796697A
Other languages
German (de)
English (en)
Inventor
Ulrich Speh
Eberhard NÄGELE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Wet Products GmbH
Original Assignee
Mattson Wet Products GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Wet Products GmbH filed Critical Mattson Wet Products GmbH
Publication of EP1464075A2 publication Critical patent/EP1464075A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to an apparatus and a method for treating disc-shaped substrates.
  • This device has the disadvantage that the wafers have to be collected into one batch each before their fine cleaning, as a result of which the continuous processing process of the wafers and thus the throughput of a production system are impaired.
  • the connection of the cleaning device into a CMP system and other systems which generally work in the single wafer process is difficult.
  • a device and a method for treating individual semiconductor wafers with a treatment liquid is known.
  • a semiconductor wafer is received in the interior, ie in the plane of a rotatable carrier ring, and rotated about an axis of rotation extending perpendicular to the substrate.
  • a treatment fluid is applied to the substrate via a first plurality of nozzles. Due to the rotation of the substrate and the the fluid flows outwards by centrifugal force.
  • the first plurality of nozzles is attached to a carrier which is movable radially to the axis of rotation, so that the nozzles can be moved radially to the axis of rotation.
  • a further nozzle is provided on the carrier, via which a heated gas can be directed onto the substrate.
  • the heated gas has the function of reducing the surface tension of the liquid at the liquid-gas interface, which is to achieve good drying of the substrate.
  • the carrier carrying the nozzles is moved radially away from the axis of rotation in order to achieve drying of the substrate from the inside to the outside.
  • the present invention is therefore based on the object of providing a device and a method for treating disk-shaped substrates which, in a simple and inexpensive manner, enable uniform treatment of individual substrates.
  • this object is achieved in a device for treating disk-shaped substrates, in particular semiconductor wafers, with a essentially flat carrier ring, which can be rotated in the plane about an axis of rotation by a rotating device, in that at least three support elements are provided which extend out of the plane of the carrier ring and which are spaced apart from the plane of the carrier ring and provide a multi-point support for the Form substrate.
  • Providing a multi-point support spaced apart from the plane of the carrier ring eliminates the risk that treatment fluid thrown off the surface of the substrate hits the carrier ring and splashes back onto the substrate. It also enables a handling device to be inserted between the carrier ring and the multi-point support in order to lift the substrate from the multi-point support or to place it thereon. Therefore, the handling device for loading and unloading the carrier ring can be considerably simplified.
  • contact surfaces of the contact elements are arranged on a circumferential contour of the substrate in order to contact the substrate essentially only in the edge area.
  • the support elements preferably extend into the area of the central opening of the carrier ring. Both surfaces of the substrate are thus essentially freely accessible.
  • the support elements preferably extend from the inner circumference of the carrier ring.
  • the support elements preferably extend obliquely to the plane of the carrier ring in order to enable the substrate to be arranged in a simple manner in the region of the central opening of the carrier ring. Furthermore, the oblique arrangement of the support elements ensures that they cover the substrate as little as possible.
  • the contact surfaces of the contact elements are inclined to the plane of the carrier ring in order to enable self-centering of a substrate placed thereon.
  • the inclined contact surface ensures that the substrate only rests on the contact surfaces with one peripheral edge and that a brought treatment fluid can reach all areas of the overlying surface of the substrate.
  • the device preferably has at least two stop surfaces which extend substantially perpendicular to the plane of the carrier ring for limiting lateral movement of the substrate. This prevents the substrates from moving laterally during rotation of the carrier ring and possibly being damaged thereby.
  • the stop surfaces are formed on the support elements, which prevents lateral movement of the substrate in a particularly simple and inexpensive manner.
  • the stop surfaces are provided on stop elements which are provided separately from the support elements and are preferably movably attached to the carrier ring and can be moved between a free position and a position in contact with the substrate. This makes it possible to first lay the substrates on the support elements and then to provide a lateral fixation for the substrate. This makes it possible, in particular, to hold substrates with different diameters, since the movable stop elements fix the sides.
  • the stop elements can preferably be moved in contact with the substrate by a rotary movement of the carrier ring, as a result of which an additional drive mechanism for the stop elements is avoided.
  • the stop elements preferably have a cross section which widens from the stop surfaces in a substantially V-shaped manner.
  • the carrier ring and the associated rotating device lie below the contact surfaces of the contact elements in order to prevent the rotary device from tion generated impurities, especially abrasion, comes on the treated substrates.
  • the object on which the invention is based is also achieved by a device for treating disc-shaped substrates, in particular semiconductor wafers, with a device for rotating the substrates about an axis of rotation and at least one first group of nozzles, in which the nozzles are at different distances from the axis of rotation , solved in that the nozzles can be controlled individually or in sub-groups.
  • a device for treating disc-shaped substrates in particular semiconductor wafers
  • a device for rotating the substrates about an axis of rotation and at least one first group of nozzles, in which the nozzles are at different distances from the axis of rotation solved in that the nozzles can be controlled individually or in sub-groups.
  • the device preferably has at least one further group of nozzles, in which the nozzles are at different distances from the axis of rotation, and the nozzles of the second group can in turn preferably be controlled individually or in subgroups.
  • the second group of nozzles enables the simultaneous and / or subsequent application of a further fluid, with the individual actuation allowing a controlled displacement of a fluid applied by the first nozzles by a further fluid.
  • three groups are preferably provided, for example in order to direct a treatment fluid, a cleaning fluid, a rinsing fluid and / or a drying fluid onto the substrate without the different fluids having to be applied via common nozzles. This prevents mixing of the different fluids in the area of supply lines and / or the nozzles.
  • the nozzles of at least one further group are arranged in the region of the distance of the nozzles of the first group to the axis of rotation.
  • Rotary motion of the substrate creates different concentric application areas for each of the nozzles, the application areas of the nozzles of one group each being the same as the application areas of the nozzles of the other Alternate group. This enables a controlled displacement of a fluid applied through the nozzles of one group by a fluid applied through the other group.
  • the nozzles of at least one group are preferably arranged on a straight line extending radially to the axis of rotation, which leads to a simple construction of the device, and in particular of the feed lines for the nozzles.
  • the nozzles of the first group and at least one further group preferably lie on a straight line extending radially to the axis of rotation.
  • the nozzles of the first group preferably alternate with the nozzles of the further group on the straight line.
  • the nozzles of at least one group can be acted upon with fluid via a common fluid supply unit, which can ensure that the nozzles of a group are actuated with the same fluid and with essentially the same pressure.
  • the nozzles of at least one group can preferably be acted upon with fluid via a common pressure line.
  • the nozzles of at least one group can be acted upon with different fluids, whereby the treatment of the substrate with different fluids is also possible with a single group of nozzles.
  • the nozzles of at least one group can be switched on and / or off individually or in subgroups, which, for example, enables an exclusive treatment of the edge area. This also enables a controlled displacement of a fluid by another fluid.
  • the shape of the nozzle jet and / or the flow rate of at least one nozzle of at least one group can be changed for a good adjustment of the treatment results.
  • a nozzle is arranged on or in the region of the axis of rotation in order to enable a fluid to be applied to the substrate in the region of the axis of rotation in order to ensure complete treatment of the substrate.
  • the nozzle can be assigned to one or more of the groups of nozzles, or it can be designed as a single, independent nozzle.
  • different fluids can be applied to the nozzle in order to enable a uniform treatment of the substrate with different fluids starting from the axis of rotation.
  • At least two separate feed lines for different fluids are provided in order to avoid mixing of the different fluids, at least in the area of the feed lines.
  • At least one group of nozzles is provided above and below the substrate.
  • the carrier ring according to the invention is used in combination with the nozzle arrangement according to the invention, since the combination with a compact design enables a particularly uniform treatment of both surfaces of a disk-shaped substrate.
  • the object on which the invention is based is also achieved in a method for treating disk-shaped substrates, in particular semiconductor wafers, in which the substrates are rotated about an axis of rotation arranged essentially perpendicular to the plane of the substrates and via at least a first group of nozzles which have different distances to the axis of rotation, a first fluid is applied in that the nozzles are controlled individually or in subgroups in order to enable selective treatment of surface areas of the substrate.
  • the individual or group control of the nozzles allows selective surface areas of the substrate to be treated without having to move the nozzles, which increases the risk of contamination of a treatment room and / or the substrates is reduced.
  • the treatment room can be made compact because the nozzles are fixed.
  • At least one further fluid is directed onto the substrate via at least one nozzle, as a result of which the first fluid is displaced from the substrate.
  • the further fluid is preferably directed onto the substrate via at least one nozzle of at least one further group of nozzles in order to prevent mixing of the fluids in the feed lines to the nozzles or at the nozzles. This also enables a controlled displacement of the first fluid.
  • the further fluid is preferably applied via a nozzle which is closer to the axis of rotation than a nozzle via which the first fluid is applied to the substrate. In this way, a uniform displacement of the first fluid radially outwards is achieved by the centrifugal force generated by the rotation.
  • the nozzles applying the first fluid are switched off sequentially away from the axis of rotation, or switched over to the application of the second fluid.
  • the treatment is ended evenly and in a controlled manner.
  • the nozzles which apply the further fluid are preferably switched on sequentially away from the axis of rotation in order to apply the further fluid to the substrate in a radially increasing area and to displace the first fluid in a controlled manner.
  • the further fluid is initially applied to the substrate in the region of the axis of rotation in order to ensure complete displacement of the first fluid.
  • the treatment with the further fluid is ended by applying a further fluid in the same manner as the treatment with the first fluid.
  • the first fluid is preferably a cleaning or rinsing liquid.
  • at least one further fluid is a rinsing liquid and / or a fluid that reduces the surface tension of the fluid on the substrate in order to achieve a uniform rinsing and / or drying of the substrate.
  • the upper and lower sides of the substrate are preferably treated simultaneously.
  • FIG. 1 shows a schematic top view of a carrier ring with a drive according to the present invention
  • Fig. 2 is a schematic sectional view of a carrier ring
  • FIG. 5 shows a nozzle arrangement for the treatment of a disk-shaped substrate according to a first embodiment of the invention
  • FIG. 6 shows a nozzle arrangement for the treatment of a disk-shaped substrate according to an alternative embodiment of the present invention
  • 7A to D are schematic sectional views through a cleaning device of the present invention during different treatment steps
  • FIG. 8A and B show a schematic plan view of a nozzle arrangement according to a further exemplary embodiment of the invention and a schematic sectional view through a single nozzle along the line X-X in FIG. 8A.
  • FIGS. 9A to I are schematic sectional views through a cleaning device according to the present invention during different steps in a wafer drying;
  • FIGS. 9C and D are a sectional view similar to FIG. 9, showing intermediate steps between FIGS. 9C and D;
  • the substrate carrier 1 shows a top view of a substrate carrier 1 according to the invention for holding disk-shaped semiconductor wafers 3 in a device for treating the semiconductor wafers.
  • the substrate carrier 1 has a flat carrier ring 5 with an inner opening 6.
  • the circumference of the opening 6 is chosen larger than an outer circumference of the substrates 3.
  • the substrate carrier 1 also has three support elements 8 which are fixed to the support ring 5 in the form of support pins.
  • the support elements 8 extend into the area of the central opening 6 in order to form a three-point support for the substrates in this area.
  • the support elements 8 extend upwards with respect to the flat support ring 5 in order to arrange the three-point support with respect to the support ring 5 in a plane perpendicular to the plane of the support ring 5.
  • a rotary drive device 10 is also provided for rotating carrier ring 5 about an axis of rotation A extending perpendicular to carrier ring 5.
  • the rotary drive 10 engages in the embodiment shown in FIG. play laterally, ie radially on the carrier ring 5.
  • a suitable bearing device can be provided for rotatably holding the carrier ring 5.
  • FIG. 2 shows an alternative embodiment of a substrate carrier 1, the same reference numerals being used in FIG. 2 if the same or similar elements are designated.
  • the substrate carrier 1 in turn has a flat carrier ring 5 with an inner opening 6 which is substantially larger than the outer circumference of the substrates to be accommodated.
  • support elements 8 are provided on the carrier ring 5, which form a multi-point support spaced above the carrier ring 5.
  • the support elements 8 extend both obliquely to the axis of rotation A and the plane of the support ring 5 in order to arrange the multi-point support above the support ring 5 and in the region of the central opening 6.
  • a rotary drive 10 is again provided for the carrier ring 5, which in the exemplary embodiment shown in FIG. 2 engages on an underside of the carrier ring 5.
  • bearing elements not shown, are provided for rotatably holding the carrier ring 5.
  • the bearing elements preferably hold the carrier ring 5 in a substantially horizontal orientation in a device for treating semiconductor wafers, as will be described in more detail below.
  • the support elements 8 form a support surface 12 which is oblique with respect to the horizontal, which on the one hand can provide centering of the semiconductor wafers 3 and on the other hand provides as free as possible access to all areas of an upper side 14 and an underside 15 of the semiconductor wafer 3 allows. Free access to the underside 15 is made possible by the fact that the semiconductor wafer 3 rests essentially exclusively with a lower peripheral edge on the inclined contact surface 12 of the contact pin 8.
  • FIG. 3 shows an alternative embodiment of a support element 8 which can be attached to a carrier element 5. The same reference numerals are used in FIG. 3 insofar as the same or similar elements are designated.
  • FIG. 3 shows two support elements 8, with FIG. 3A showing the placement of a semiconductor wafer 3, while in FIG. 3B the semiconductor wafer 3 rests on the holding elements 8.
  • the holding elements 8 can be attached to the carrier ring 5 perpendicularly or, as shown in FIG. 2, obliquely to the axis of rotation A.
  • the support elements 8 have centering bevels 17, on which a semiconductor wafer 3 placed thereon can slide along, in order to finally be placed centered on essentially horizontally extending support shoulders 19.
  • the edge overlap between the support element 8 and the semiconductor wafer 3 is kept as small as possible and is, for example, in a range of 0.5-1.5 mm, preferably in a range of 1 mm.
  • the support elements 8 also have stop surfaces 20 which restrict lateral movement of the semiconductor wafer when it rests on the support shoulders 19 as shown in FIG. 3B.
  • the stop surfaces 20 have the smallest possible surface area in order to prevent liquid impinging on the semiconductor wafer 3 from splashing back in the direction of the semiconductor wafer 3 when the semiconductor wafer 3 is rotated.
  • the stop surface 20 forms the tip of a cross-section of the support element 8 widening away from the stop surface 20 in this area.
  • FIG. 4 shows an alternative device for restricting a lateral movement of a semiconductor wafer 3 during a rotation of the carrier ring 5.
  • the support elements 8 are only shown schematically as supports.
  • the carrier ring 5 is also not shown in FIG. 4.
  • pivotable retaining devices 23 are provided on the carrier ring 5. 4 two restraint devices are shown, wherein however, preferably three or any other number can be provided.
  • the retaining devices 23 each have a pivot bearing 25, a limiting or stop element 27, a lever arm 28 and a weight 30.
  • the pivot bearing 25 is suitably attached to the carrier ring 5 in order to enable the limiting element 27 to pivot in the direction of the axis of rotation A of the carrier ring 5.
  • 4A shows the position of the limiting element 23 during a rest position, in which the carrier ring 5 does not rotate about the axis of rotation A.
  • 4B shows the position of the limiting elements 23 during a rotation of the carrier ring 5 about the axis of rotation A.
  • 5 shows a schematic top view of a nozzle arrangement for a device for treating disc-shaped substrates according to the present invention.
  • 5 shows a semiconductor wafer 3 as the substrate to be treated, which is rotated about an axis of rotation A via a suitable device, such as, for example, the carrier ring 1 described in FIGS. 1 to 4, as indicated by the arrow B.
  • the nozzle arrangement shown in FIG. 5 has a first group 40 of nozzles 42a to 42g.
  • the nozzles 42a to 42g of the first nozzle group 40 extend on a straight line arranged radially to the axis of rotation A.
  • the nozzles 42a to 42g are arranged at different distances from the axis of rotation A, the nozzle 42a being closest to the axis of rotation A and the nozzle 42g being the farthest from the axis of rotation.
  • nozzles 40 are arranged on a common straight line.
  • the nozzles 42a to 42g are connected via a common line, not shown, to a common fluid supply, not shown. Due to the rotation of the semiconductor wafer 3, the nozzles 42a to 42g can therefore apply a fluid to the wafer 3 on different rings which extend concentrically about the axis of rotation A. It is possible that different fluids, such as a cleaning and a rinsing fluid and / or fluid mixtures, are provided in succession via the common fluid supply. Of course, it is also possible that the nozzles 42a to 42g are each connected to a common fluid supply or individual fluid supplies via individual lines. It is also possible to divide the nozzles 42a to 42g of the first group 40 of nozzles into subgroups and to connect the nozzles of the subgroups to a common line or a common fluid supply.
  • the nozzles 42a to 42g can each be controlled individually or in subgroups.
  • the nozzles can be selectively switched on or off individually or in subgroups. Additionally or alternatively, it is possible to control the flow rate through each individual nozzle or nozzle sub-group and / or the opening or spray angle of a nozzle or the nozzles of a sub-group. Concentration differences on the wafer surface can be set, for example, via the flow rate. About the opening or Spray angles can be set to different spray shapes, such as a (full) cone, fan or point spray, in order to to meet requirements.
  • a control unit is provided for controlling the nozzles.
  • a second nozzle group 44 with nozzles 46a to 46e.
  • the nozzles 46a to 46e of the second nozzle group 44 are arranged on the same straight line as the nozzles 42a to 42g of the first group 40 of nozzles but on an opposite side with respect to the axis of rotation A.
  • the nozzles 46a to 46e are in turn at different distances with respect to the axis of rotation A is arranged, the nozzle 46a being closest to the axis of rotation A and the nozzle 46e being the farthest away therefrom.
  • a fluid can be applied to the wafer 3 in concentric rings via the second nozzle group 44, the fluid being, for example, a rinsing liquid such as DI water.
  • the nozzles 46a to 46e of the second nozzle group are connected to a fluid supply in a manner similar to the nozzles of the first nozzle group 40. Furthermore, the nozzles of the second nozzle group can be controlled individually or in subgroups, in the same way as the nozzles of the first nozzle group 40.
  • nozzle 5 additionally has a third nozzle group 48 with nozzles 50a to 50e.
  • the nozzles 50a to 50e are arranged on the same straight line as the nozzles 46a to 46e of the second nozzle group 44, the nozzles of the first and second nozzle groups 44, 48 alternating on the straight line.
  • a fluid in particular a drying fluid, can in turn be applied to the wafer 3 via the nozzles of the third nozzle group 48.
  • the drying fluid is in particular a fluid which reduces the surface tension of a fluid located on the wafer, such as IPA (isopropyl alcohol).
  • the nozzles 50a to 50e of the third nozzle group 48 are in the same way as those of the first or second nozzle group 40, 44 with a fluid supply connected.
  • the nozzles 50a to 50e of the third nozzle groups 48 can be controlled individually or in subgroups in a similar manner to the nozzles of the first and second nozzle groups 40, 44.
  • the 5 also has a center nozzle 52 which is arranged on the axis of rotation A. Different fluids, in particular the fluids that can be applied by the three nozzle groups 40, 44, 48, can be applied to the wafer via the center nozzle 52.
  • the center nozzle has supply lines for the different fluids in order to prevent mixing of the fluids in the supply lines. If a mixing of fluids is not harmful, different fluids can also be fed to the center nozzle 52 via a common feed line.
  • the nozzle group shown in FIG. 5 has been described as lying above the wafer 3, the nozzle arrangement can also be arranged below a wafer 3 in the same way.
  • Corresponding nozzle groups can of course also be arranged above and below a wafer 3 in order to allow simultaneous treatment of the opposite surfaces of the wafer 3.
  • the nozzles of the respective groups and the center nozzle can be movable along the axis of rotation in order to adjust the distance to the substrate.
  • the nozzles can be moved individually, in groups or together.
  • the treatment device is briefly described below.
  • a treatment liquid such as a treatment liquid
  • the treatment liquid is then applied to the rotating wafer via the center nozzle 52 and the first nozzle group 40.
  • the treatment liquid is applied to the wafer 3 in concentrically extending ring regions.
  • the centrifugal force generated by the rotation the liquid flows outward and is thrown outward from the wafer surface.
  • the center nozzle 52 is first switched to a rinsing liquid, ie instead of a treatment liquid, a rinsing liquid is now applied via the center nozzle 52 passed the wafer 3.
  • the rinsing liquid displaces the treatment liquid located on the wafer in the region of the center nozzle 5.
  • the nozzles 42a to 42g are now switched off in succession in order to achieve a uniform displacement of the treatment liquid.
  • additional rinsing liquid is fed onto the wafer via the nozzles of the second or third nozzle group 44, 48, the nozzles being switched on sequentially from the inside out, in accordance with the switching off of the nozzles 42a to 42g of the first nozzle group.
  • This is intended to ensure that the nozzle is introduced via the rinsing liquid and is closer to the axis of rotation A than the innermost nozzle of the first nozzle group, via which a treatment liquid is directed onto the wafer. This enables a good and even displacement of the treatment liquid to the outside.
  • a drying fluid is now directed onto the surface of the wafer 3 via the center nozzle 52.
  • IPA isopropyl alcohol
  • the drying effect starts from the axis of rotation A and spreads radially outwards.
  • the nozzles introducing the flushing fluid are moved away from the axis of rotation, i.e. switched off from the inside out.
  • rinsing fluid was introduced to the surface of the wafer 3 via the second nozzle group 44, i.e. first the nozzle 46a is switched off and then the nozzle 46b etc. After the nozzle 46a has been switched off, for example, a reference is made to FIG.
  • Nozzle 46b internal nozzle such as nozzle 50a, also introduces drying fluid to aid the uniform, radially expanding drying of the wafer.
  • the above functional sequence represents only one of the many possible functional sequences, since the respective nozzles of the individual nozzle groups 40, 44, 48 can each be controlled individually. It is therefore not necessary, for example, to use all the nozzles of the first nozzle group when cleaning the wafer, as is shown, for example, in FIG. 7A. For example, only the outer nozzles can be used for selective edge cleaning, as shown in FIG. 7B. Furthermore, surface cleaning via a single one of the nozzles of the first nozzle group 40 is also conceivable by changing the opening or spray angle of the nozzle, as indicated in FIG. 7C. It is also possible that, for example, the center nozzle alone applies a fluid, such as a rinsing fluid, to substantially the entire surface of the wafer 3, as is indicated, for example, in FIG. 7D.
  • a fluid such as a rinsing fluid
  • FIG. 6 shows an alternative embodiment of a nozzle arrangement according to the invention.
  • the same reference numerals as in FIG. 5 are used in the description of FIG. 6, provided that similar or identical elements are designated.
  • FIG. 6 shows a semiconductor wafer 3 which, as indicated by arrow B, can be rotated about an axis of rotation A.
  • the nozzle arrangement has a first nozzle group 40 with a plurality of nozzles, which essentially corresponds to the first nozzle group according to FIG. 5.
  • the nozzle arrangement furthermore has second and third nozzle groups 44, 48 with a plurality of nozzles, essentially corresponding to the second and third nozzle groups 44, 48 according to FIG. 5.
  • the nozzle groups 44 , 48 but seven instead of five
  • the nozzles of the second and third nozzle groups 44, 48 do not lie on a common straight line, rather the nozzles lie on parallel straight lines offset from one another. This offset arrangement also enables the arrangement of several nozzles along the respective straight line.
  • the nozzles of the nozzle groups 44, 48 are each arranged at different distances from the axis of rotation A.
  • the nozzles of the second alternate on a distance line starting from the axis of rotation A and third nozzle group 44, 48 each. This also applies to the first nozzle group 40.
  • the nozzle arrangement in turn has a center nozzle 52.
  • the function of the nozzle arrangement according to FIG. 6 essentially corresponds to the function of the nozzle arrangement according to FIG. 5.
  • FIG. 8 shows a further nozzle arrangement according to the invention.
  • the same reference numerals are used as in FIG. 5 or 6, provided that the same or similar elements are identified.
  • a semiconductor wafer 3 is arranged below the nozzle arrangement and can be rotated about an axis of rotation A by a device, not shown, as indicated by the arrow B.
  • the nozzle arrangement has a first nozzle group 60 and a second nozzle group 62, which are arranged along a straight line extending through the axis of rotation A.
  • the respective nozzles of the nozzle groups 60, 62 alternate along the straight line X-X.
  • the nozzle groups 60, 62 are supplied with fluid and controlled in the same way as the second and third nozzle groups 44, 48 according to FIG. 5.
  • a center nozzle 52 is provided which lies on the axis of rotation A.
  • the nozzle arrangement according to FIG. 8 essentially corresponds to the nozzle arrangement according to FIG. 5, but the first nozzle group 40 according to FIG. 5 is omitted.
  • FIG. 8B shows a section through a nozzle 64 of the first nozzle group 60 along the line XX in FIG. 8A.
  • the nozzle is inclined with respect to the axis of rotation A in such a way that a fluid jet emanating from the nozzle 64 is directed away from the axis of rotation A.
  • the nozzle 64 can also be inclined along the line YY in FIG. 8A in order to form a tangential component of the nozzle jet with respect to one Provide axis of rotation A concentric area on the substrate 3.
  • Such an inclination of the nozzle can be provided for all nozzles of the different nozzle groups of all exemplary embodiments, it being possible for the inclination to differ between the nozzle groups and / or the individual nozzles. Furthermore, it is possible to design the nozzles to be movable such that the angle of the nozzles can be changed individually and / or in groups.
  • the device 70 has a housing forming a treatment chamber 72, with an upper wall 74, a lower wall 76 and side walls 78.
  • the housing has a suitable opening for inserting the semiconductor wafer 3, which is not shown in detail, however.
  • a substrate carrier 1 with a carrier ring 5 is provided within the chamber 72.
  • support elements 8 are provided on the carrier ring 5 in order to hold a semiconductor wafer 3 above a plane formed by the carrier ring 5.
  • First and second nozzle groups 80, 82 directed into the chamber 72 are provided on the upper wall 74 and the lower wall 76.
  • the nozzle groups are arranged on a common straight line and the nozzles of the respective nozzle groups alternate.
  • the nozzles of the first nozzle group 80 are provided with 80a to 80f in FIG. 9, since the nozzle group 80 has six nozzles.
  • the nozzles of the second nozzle group 82 are denoted by 82a to 82f.
  • a rinsing fluid 88 such as DI water, is directed to the top and bottom of the wafer 3 via the nozzles 80a and 80b of the first nozzle group 80.
  • the rinsing fluid is thrown outwards over the surfaces of the wafer 3 and thus covers the entire top and bottom of the wafer 3, as can be clearly seen in FIG. 9A.
  • a drying fluid in the region of the axis of rotation is applied to the top and bottom of the wafer 3 via the center nozzle 52.
  • the drying fluid 90 is, for example, a fluid that reduces the surface tension of the rinsing fluid 88. This results in a central drying of the wafer.
  • the nozzle 80a of the first nozzle group 80 is then switched off and the nozzle 80c switched on, so that rinsing fluid is now directed via the nozzles 80b and 80c onto the top and bottom of the wafer, as can be seen in FIG. 9C.
  • the drying fluid 90 is now directed to the top and bottom of the wafer 3 via the nozzle 82a of the second nozzle group 82 in order to provide a radial expansion of the central drying region.
  • the innermost (ie closest to the axis of rotation) nozzle of the first nozzle group 80 is switched off sequentially and a nozzle located further out is switched on in order to flush the rinsing fluid onto the top and bottom of the wafer 3 to lead.
  • a nozzle of the second nozzle group 82 which is further away from the axis of rotation is used in each case to guide the drying fluid 90 onto the top and bottom of the wafer 3 in order to provide a radially expanding drying area.
  • rinsing fluid 88 is applied to the top and bottom of the wafer 3 via the two outermost nozzles 80e and 80f of the first nozzle group 80. If the nozzle 80e is now switched off, no additional nozzle is switched on, so that the rinsing fluid 88 is directed onto the wafer 3 exclusively via the outermost nozzle 80f, as can be seen in FIG. 9G. As can also be seen in FIG. 9G, drying fluid continues to be directed onto the wafer 3 via the nozzles 82e of the second nozzle group 82, which nozzles are located inside the nozzle 80f.
  • FIG. 9 shows the device 70 after the drying of the wafer 3 has ended. The wafer 3 has dried completely. All nozzles are in a switched-off state and the wafer 3 can now be removed using a handling device, not shown.
  • FIG. 10A corresponds to FIG. 9C while FIG. 10D corresponds to FIG. 9D.
  • FIGS. 10B and 10C represent intermediate steps.
  • rinsing fluid 88 is applied to the top and bottom of a rotating wafer 3 via the nozzles 80B and 80C. Drying fluid is applied to the wafer 3 via the nozzle 82A. All other nozzles are in a switched off state.
  • the nozzle 80d of the first nozzle group 80 is switched on.
  • rinsing fluid 88 is now directed onto the wafer 3 via the nozzles 80b, 80c and 80d. Drying fluid continues to be directed onto the wafer 3 via the nozzle 82a.
  • the nozzle 80b is switched off, so that the rinsing fluid is only directed onto the wafer 3 via the nozzles 80c and 80d. Drying fluid is further directed onto the wafer 3 via the nozzle 82a in order to first achieve drying radially outside the application area of the nozzle 82b.
  • the nozzle 82a is closed and the nozzle 82b is opened in order to maintain the drying situation shown in FIG. 10D.
  • the switching sequence shown results in uniform drying from the center of the substrate to the outside.
  • any other suitable switching sequence can also be used.
  • a rinsing fluid 88 it is of course also possible to use a further treatment fluid or a drying fluid.
  • the invention has been described above on the basis of preferred exemplary embodiments, without referring to the specifically illustrated exemplary embodiments. to be restricted. In particular, different numbers of nozzles are conceivable within the respective nozzle groups. It is also not necessary for the nozzles of the respective nozzle groups to be arranged on a straight line. If the nozzles of the respective nozzle groups are arranged on straight lines, it is not necessary that they are arranged on common or parallel straight lines. Rather, the straight lines of the respective nozzle groups can intersect at any angle.
  • the device according to the invention is also not limited to the treatment of semiconductor wafers. Rather, any disk-shaped substrates, such as masks for semiconductor production etc. can be treated in the device according to the invention.
  • the treatment device according to the invention can make do with a single nozzle group, wherein the individual nozzles of the nozzle group can be acted upon with the same and / or different fluids.
  • a center nozzle separate from the nozzle groups a nozzle directed towards the center of rotation of the substrate of one or more of the nozzle groups can also be provided.
  • Different features of the alternative nozzle arrangements can be combined as long as they are compatible.
  • the nozzle arrangements can be used particularly advantageously with the rotatable substrate carrier.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

Dispositif de traitement de substrats en forme de disque, en particulier de tranches de semi-conducteur, permettant de traiter des substrats individuels de manière uniforme, simple et peu onéreuse. Le dispositif selon la présente invention comporte un anneau de support essentiellement plat qui est rotatif dans un plan autour d'un axe au moyen d'un dispositif de rotation et qui porte au moins trois éléments d'appui s'étendant au-delà du plan de l'anneau de support et formant un appui à plusieurs points à une certaine distance du plan de l'anneau de support. La présente invention concerne en outre un dispositif et un procédé de traitement de substrats en forme de disque, en particulier de tranches de semi-conducteur. Selon ledit procédé, les substrats sont tournés autour d'un axe de rotation essentiellement vertical par rapport au plan desdits substrats et un premier fluide est appliqué à l'aide d'au moins un premier groupe de buses présentant des écarts différents par rapport à l'axe de rotation, lesdites buses étant commandées individuellement ou par sous-groupes pour permettre un traitement sélectif de parties de la surface du substrat.
EP02796697A 2002-01-09 2002-12-20 Dispositif et procede de traitement de substrats en forme de disque Withdrawn EP1464075A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10200525A DE10200525A1 (de) 2002-01-09 2002-01-09 Vorrichtung und Verfahren zum Behandeln von scheibenförmigen Substraten
DE10200525 2002-01-09
PCT/EP2002/014632 WO2003058686A2 (fr) 2002-01-09 2002-12-20 Dispositif et procede de traitement de substrats en forme de disque

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EP1464075A2 true EP1464075A2 (fr) 2004-10-06

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US (1) US20050178504A1 (fr)
EP (1) EP1464075A2 (fr)
DE (1) DE10200525A1 (fr)
TW (1) TW200302542A (fr)
WO (1) WO2003058686A2 (fr)

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DE102004053337A1 (de) * 2004-11-04 2006-05-11 Steag Hama Tech Ag Verfahren und Vorrichtung zum Behandeln von Substraten und Düseneinheit hierfür
TWI366222B (en) * 2004-11-23 2012-06-11 Lam Res Ag Apparatus and method for wet treatment of wafers
US7946303B2 (en) * 2006-09-29 2011-05-24 Lam Research Corporation Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
DE102007026635B4 (de) * 2007-06-06 2010-07-29 Atotech Deutschland Gmbh Vorrichtung zum nasschemischen Behandeln von Ware, Verwendung eines Strömungsorgans, Verfahren zum Einbauen eines Strömungsorgans in die Vorrichtung sowie Verfahren zur Herstellung einer nasschemisch behandelten Ware
US10460926B2 (en) 2017-11-17 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for chemical mechanical polishing process
KR102573572B1 (ko) * 2017-12-20 2023-09-01 삼성전자주식회사 웨이퍼 세정 장치
US11728185B2 (en) 2021-01-05 2023-08-15 Applied Materials, Inc. Steam-assisted single substrate cleaning process and apparatus

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JPH04186626A (ja) * 1990-11-16 1992-07-03 Nec Yamaguchi Ltd エッチング装置
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US20050178504A1 (en) 2005-08-18
WO2003058686A2 (fr) 2003-07-17
WO2003058686A3 (fr) 2003-10-02
DE10200525A1 (de) 2003-10-23
TW200302542A (en) 2003-08-01

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