EP1444385A1 - Anoden zur elektroplatierung und verfahren zur herstellung von werkstoffen auf halbleitersubstraten - Google Patents

Anoden zur elektroplatierung und verfahren zur herstellung von werkstoffen auf halbleitersubstraten

Info

Publication number
EP1444385A1
EP1444385A1 EP01988180A EP01988180A EP1444385A1 EP 1444385 A1 EP1444385 A1 EP 1444385A1 EP 01988180 A EP01988180 A EP 01988180A EP 01988180 A EP01988180 A EP 01988180A EP 1444385 A1 EP1444385 A1 EP 1444385A1
Authority
EP
European Patent Office
Prior art keywords
anode
less
grain size
average grain
micrometers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01988180A
Other languages
English (en)
French (fr)
Inventor
Tamara L. White
Nancy F. Dean
Martin W. Weiser
Michael R. Pinter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP1444385A1 publication Critical patent/EP1444385A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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Definitions

  • An exemplary method of forming a composition comprising copper/phosphorus, having a purity of at least 5N, and a phosphorus concentration of about 200 ppm to about 1000 ppm utilizes vacuum casting and a master alloy.
  • the purification of copper can be accomplished by electrorefining.
EP01988180A 2001-11-16 2001-11-16 Anoden zur elektroplatierung und verfahren zur herstellung von werkstoffen auf halbleitersubstraten Withdrawn EP1444385A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/044055 WO2003044246A1 (en) 2001-11-16 2001-11-16 Anodes for electroplating operations, and methods of forming materials over semiconductor substrates

Publications (1)

Publication Number Publication Date
EP1444385A1 true EP1444385A1 (de) 2004-08-11

Family

ID=21743016

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01988180A Withdrawn EP1444385A1 (de) 2001-11-16 2001-11-16 Anoden zur elektroplatierung und verfahren zur herstellung von werkstoffen auf halbleitersubstraten

Country Status (5)

Country Link
US (1) US20050000821A1 (de)
EP (1) EP1444385A1 (de)
CN (1) CN100350079C (de)
AU (1) AU2002241512A1 (de)
WO (1) WO2003044246A1 (de)

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DE10355953B4 (de) * 2003-11-29 2005-10-20 Infineon Technologies Ag Verfahren zum Galvanisieren und Kontaktvorsprungsanordnung
WO2005073434A1 (ja) * 2004-01-29 2005-08-11 Nippon Mining & Metals Co., Ltd. 超高純度銅及びその製造方法
US7411303B2 (en) * 2004-11-09 2008-08-12 Texas Instruments Incorporated Semiconductor assembly having substrate with electroplated contact pads
JP2008184637A (ja) * 2007-01-29 2008-08-14 Nec Electronics Corp 電解Ｎｉめっき装置および半導体装置の製造方法
US20080187194A1 (en) * 2007-02-05 2008-08-07 Zhang Daoxian H Cad image normalization
CN103266337A (zh) * 2007-11-01 2013-08-28 Jx日矿日石金属株式会社 铜阳极或含磷铜阳极、在半导体晶片上电镀铜的方法及粒子附着少的半导体晶片
CN103160868A (zh) * 2011-12-17 2013-06-19 鞍钢重型机械有限责任公司 一种用于生产含硫活性镍的电解液及其使用方法
CN103073513B (zh) * 2012-12-14 2015-12-02 雅本化学股份有限公司 1-取代-5-氯-2h-1,2,3-三氮唑-4-羧酸衍生物及其制备方法
CN110565115B (zh) * 2016-03-09 2022-04-05 Ｊｘ金属株式会社 高纯度锡
JP6960363B2 (ja) * 2018-03-28 2021-11-05 Ｊｘ金属株式会社 Ｃｏアノード、Ｃｏアノードを用いた電気Ｃｏめっき方法及びＣｏアノードの評価方法
TWI749818B (zh) * 2020-10-22 2021-12-11 元智大學 金屬導線結構改質方法

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AU2002241512A1 (en) 2003-06-10
US20050000821A1 (en) 2005-01-06
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CN100350079C (zh) 2007-11-21
CN1582346A (zh) 2005-02-16

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