EP1436850A1 - Isolant pour un composant electronique organique - Google Patents

Isolant pour un composant electronique organique

Info

Publication number
EP1436850A1
EP1436850A1 EP02769910A EP02769910A EP1436850A1 EP 1436850 A1 EP1436850 A1 EP 1436850A1 EP 02769910 A EP02769910 A EP 02769910A EP 02769910 A EP02769910 A EP 02769910A EP 1436850 A1 EP1436850 A1 EP 1436850A1
Authority
EP
European Patent Office
Prior art keywords
insulator
poly
base polymer
organic
styrene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02769910A
Other languages
German (de)
English (en)
Inventor
Erwann Guillet
Peter Bonzani
Walter Fix
Henning Rost
Andreas Ullmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
Siemens AG
PolyIC GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, PolyIC GmbH and Co KG filed Critical Siemens AG
Publication of EP1436850A1 publication Critical patent/EP1436850A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/442—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from aromatic vinyl compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/447—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist

Definitions

  • the invention relates to an insulator for an organic electronic component, in particular for an organic field-effect transistor (OFET) and / or an organic capacitor.
  • OFET organic field-effect transistor
  • PHS polyhydroxystyrene
  • Polyimide was also presented as an insulator material (JA Rogers et al., IEEE Electron Devices Letters, Vol 21, No 3, 2000, p. 100). Even if this material is used, there is a risk of damage to the already finished layers of an OFET, since this material can only be processed at extremely high temperatures (-400 ° C). Because organic semi- If the conductor or conductor typically only withstands significantly lower temperatures ( «200 ° C), polyimide cannot be used in fully organic OFETs.
  • the object of the present invention is therefore to provide an isolator for a field-effect transistor which is at least partially constructed from organic material and which overcomes the disadvantages of the prior art.
  • the invention relates to an insulator for an organic electronic component, in particular for an organic field-effect transistor and / or a capacitor based at least in part on organic material, the dielectric constant of the insulator layer remaining essentially constant in a frequency range between 1 Hz and 100 kHz ,
  • the insulator comprises polyisobutylene or uncrosslinked EPDM (ethylene propylene diene monomer), as the base polymer (main component), which are only soluble in nonpolar hydrocarbons (hexane, heptane).
  • EPDM ethylene propylene diene monomer
  • the achievable homogeneous layer thickness with the material lies between approx. 2 ⁇ m-250 nm, whereby these layers still have a sufficiently high insulation property.
  • Another important advantage of this material is that it is very easy to structure in order to enable through contacts (eg by means of lithography).
  • the insulator material comprises commercially available PVDC-PAN-PMMA copolymer of the general formula
  • x, y, and z each, independently of one another, values between 0 and 1, preferably those given in the examples
  • the PVDC-PAN-PMMA copolymer is preferably used together with crosslinker components HMMM (hexamethoxymethalmelamine) and / or Cymel, the ratio of which can be varied widely (dissolved in dioxane).
  • HMMM hexamethoxymethalmelamine
  • Cymel the ratio of which can be varied widely (dissolved in dioxane).
  • This material also enables very simple structuring, although it is not yet networked. Due to very low temperatures (approx. 70 ° C), this material can be networked and then becomes resistant to all subsequent steps that are necessary to complete an OFET and to build an integrated circuit.
  • an insulator mixture comprises a base polymer of the general formula
  • A e.g. Polyhydroxystyrene and B poly (styrene-co-allyl alcohol) e.g. Is polyvinyltoluene, poly-alpha-methylstyrene.
  • an insulator which comprises a mixture of two copolymers, according to the general formula
  • a mixture of poly (vinyltoluene-co-alphamethylstyrene) / poly (styrene-co-allyl alcohol) is particularly suitable.
  • the indices x and y can be the same or different and assume values between 0.5 and 1.
  • X and y are particularly preferably the same.
  • the mixture is again preferably dissolved in polar solvents, especially in dioxane.
  • an insulator layer made of one or a mixture of several of the materials mentioned fulfills the following process, electrical and mechanical requirements and is at the same time a very inexpensive material system:
  • the insulator layer has good solubility in conventional organic solvents such as e.g. Dioxane, butanol other alcohols etc.
  • the insulator layer can be structured after application.
  • the structuring also does not negatively influence existing layers.
  • the structurability is absolutely necessary in order to produce integrated circuits which consist of several OFETs, since only with the structuring the connection lines between the gate electrode of one OFET and the source or drain electrode of another OFET is possible.
  • the insulator layer is chemically and thermally stable with respect to the process steps which are necessary to apply and structure subsequent layers of the OFET (e.g. the gate electrode)
  • the relative dielectric constant of the insulator layer is approximately constant in a frequency range between 1 Hz and 100 kHz.
  • the "relative dielectric constant” is referred to here as “approximately constant” if its change is less than or equal to 50%.
  • the relative dielectric constant of the insulator layer preferably has at least a value of about 2 in the systems mentioned. This makes it possible to implement OFETs that operate at low voltages.
  • the leakage currents through the insulator layer are advantageously negligibly small compared to the source-drain currents, even with very thin layers, i.e. they are preferably below 1 nA (depends on the 0-FET geometry).
  • the dielectric strength of the insulator layer is high, preferably has a value of at least 5 * 10 5 V / cm.
  • the insulator material should preferably not contain any movable contaminants (eg ions).
  • the threshold voltage of the OFET is preferably not shifted by the isolator system.
  • the insulator layer is resistant to mechanical loads such as bending, stretching or upsetting.
  • the insulator layer is applied by spinning, knife coating, printing or spraying in such a way that a plane-parallel, smooth, homogeneous and defect-free layer is produced.
  • structurable layers of either photoresist or metal are applied to the insulator layer.
  • the insulator layer can be removed in a defined manner with suitable solvents and thus also structured. In this way, the insulator layer is always structured at temperatures below 100 ° C, so that this processing has no negative impact on the existing functional layers (e.g. semiconductors).
  • organic material or "organic functional polymer” here encompasses all types of organic, metal-organic and / or organic-inorganic plastics (hybrids), in particular those which are referred to in English as “plastics". They are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors. A restriction in the dogmatic sense to organic material as carbon-containing material is therefore not provided, rather the broad use of, for example, silicones is also contemplated. Furthermore, the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but the use of "small molecules” is also entirely possible.
  • the word component "polymer” in the functional polymer is historical and therefore contains no information about the presence of an actually polymeric compound.
  • Example 1 Use of polyisobutylene (PIB) as an insulator - 0.4 g of PIB (Aldrich) are dissolved in 9.6 g of hexane at room temperature;
  • PIB polyisobutylene
  • PVDC-co-PAN-co-PMMA Aldrich
  • 9 g dioxane 40 - 50 ° C - then 0.5 g Cymel 327 (Cytec Industries Inc.) and 0.1 g camphorsulfonic acid added and shaken for a few seconds;
  • the solution is spin-coated (8000 rpm / 20 sec) onto the substrate already provided with source / drain electrodes and semiconductors (top gate structure) and a very homogeneous, approx. 400 nm thick layer is obtained;
  • the sample is dried for about 30 minutes at room temperature in a dynamic vacuum; -
  • the layer is then vapor-deposited with a thin gold layer, which in turn is structured by means of photolithography (photoresist, then etching with a KJ / J 2 solution)
  • This applied metal mask allows the structuring of the insulator layer by removing the now exposed insulator surfaces with a cloth soaked in toluene
  • the last step is the cross-linking of the isolator (10 min at 90 ° C)
  • Example 3 Use of [50% polyhydroxystyrene / 50% poly (styrene-co-allyl alcohol)] as an insulator. This polymer mixture is then dissolved using dioxane and filtered using a 0.2 ⁇ m filter. Then the insulator layer is "baked" on a hot plate at approx. 100 ° C for 30 minutes. The structuring is also carried out using "metal masks" as in Example 2.
  • the insulator material according to the invention shows no significant frequency-dependent change in the relative dielectric constant. Alignment of existing anisotropic molecules can be responsible for this phenomenon, or a lack of mobile charge carriers such as mobile ion NEN. In any case, no significant change in the dielectric constant, that is to say approx. 50%, is found over a frequency range of almost 100 kHz.

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Organic Insulating Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un isolant pour un composant électronique organique, notamment pour un transistor à effet de champ organique (OFET) ou pour un condensateur organique. Le matériau isolant se caractérise en ce qu'il présente une constante diélectrique relative presque constante, même en cas de variation de la fréquence dans de larges plages, par exemple entre 1 Hz et 100 kHz.
EP02769910A 2001-10-16 2002-09-05 Isolant pour un composant electronique organique Withdrawn EP1436850A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10151036A DE10151036A1 (de) 2001-10-16 2001-10-16 Isolator für ein organisches Elektronikbauteil
DE10151036 2001-10-16
PCT/DE2002/003292 WO2003038921A1 (fr) 2001-10-16 2002-09-05 Isolant pour un composant electronique organique

Publications (1)

Publication Number Publication Date
EP1436850A1 true EP1436850A1 (fr) 2004-07-14

Family

ID=7702674

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02769910A Withdrawn EP1436850A1 (fr) 2001-10-16 2002-09-05 Isolant pour un composant electronique organique

Country Status (5)

Country Link
US (1) US7298023B2 (fr)
EP (1) EP1436850A1 (fr)
JP (1) JP4360911B2 (fr)
DE (1) DE10151036A1 (fr)
WO (1) WO2003038921A1 (fr)

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DE10151036A1 (de) 2003-05-08
US20050048803A1 (en) 2005-03-03
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US7298023B2 (en) 2007-11-20
WO2003038921A1 (fr) 2003-05-08

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