EP1422568A3 - Method and apparatus for preventing the mixing of a light source gas with the main chamber gas in a lithography tool - Google Patents

Method and apparatus for preventing the mixing of a light source gas with the main chamber gas in a lithography tool Download PDF

Info

Publication number
EP1422568A3
EP1422568A3 EP03026062A EP03026062A EP1422568A3 EP 1422568 A3 EP1422568 A3 EP 1422568A3 EP 03026062 A EP03026062 A EP 03026062A EP 03026062 A EP03026062 A EP 03026062A EP 1422568 A3 EP1422568 A3 EP 1422568A3
Authority
EP
European Patent Office
Prior art keywords
gas
mixing
preventing
light source
main chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP03026062A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1422568A2 (en
Inventor
Stephen Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of EP1422568A2 publication Critical patent/EP1422568A2/en
Publication of EP1422568A3 publication Critical patent/EP1422568A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
EP03026062A 2002-11-21 2003-11-12 Method and apparatus for preventing the mixing of a light source gas with the main chamber gas in a lithography tool Ceased EP1422568A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/300,898 US6770895B2 (en) 2002-11-21 2002-11-21 Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
US300898 2002-11-21

Publications (2)

Publication Number Publication Date
EP1422568A2 EP1422568A2 (en) 2004-05-26
EP1422568A3 true EP1422568A3 (en) 2006-02-01

Family

ID=32229878

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03026062A Ceased EP1422568A3 (en) 2002-11-21 2003-11-12 Method and apparatus for preventing the mixing of a light source gas with the main chamber gas in a lithography tool

Country Status (7)

Country Link
US (3) US6770895B2 (ja)
EP (1) EP1422568A3 (ja)
JP (1) JP4516738B2 (ja)
KR (1) KR100822071B1 (ja)
CN (1) CN100476584C (ja)
SG (1) SG106161A1 (ja)
TW (1) TWI331702B (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
US6919573B2 (en) * 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
US7094036B2 (en) * 2003-09-24 2006-08-22 The Boc Group Plc Vacuum pumping system
US8094288B2 (en) * 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9077022B2 (en) * 2004-10-29 2015-07-07 Medtronic, Inc. Lithium-ion battery
US7361911B2 (en) 2004-12-09 2008-04-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006054726B4 (de) * 2006-11-21 2014-09-11 Asml Netherlands B.V. Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen und optische Anordnung
JP2009036182A (ja) * 2007-08-03 2009-02-19 Fuji Koki Corp 可変容量型圧縮機用制御弁
TWI402628B (zh) * 2007-08-31 2013-07-21 Cymer Inc 控管極遠紫外線（ｅｕｖ）光微影裝置腔室間之氣體流動的系統
US8115900B2 (en) 2007-09-17 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5339742B2 (ja) * 2008-03-04 2013-11-13 ウシオ電機株式会社 極端紫外光が出射する装置と極端紫外光が導入される装置との接続装置
US8288742B2 (en) 2008-05-22 2012-10-16 Vladimir Balakin Charged particle cancer therapy patient positioning method and apparatus
US8637833B2 (en) 2008-05-22 2014-01-28 Vladimir Balakin Synchrotron power supply apparatus and method of use thereof
US8569717B2 (en) 2008-05-22 2013-10-29 Vladimir Balakin Intensity modulated three-dimensional radiation scanning method and apparatus
US8188688B2 (en) 2008-05-22 2012-05-29 Vladimir Balakin Magnetic field control method and apparatus used in conjunction with a charged particle cancer therapy system
EP2283711B1 (en) 2008-05-22 2018-07-11 Vladimir Yegorovich Balakin Charged particle beam acceleration apparatus as part of a charged particle cancer therapy system
EP2283713B1 (en) 2008-05-22 2018-03-28 Vladimir Yegorovich Balakin Multi-axis charged particle cancer therapy apparatus
US8373145B2 (en) * 2008-05-22 2013-02-12 Vladimir Balakin Charged particle cancer therapy system magnet control method and apparatus
US8368038B2 (en) 2008-05-22 2013-02-05 Vladimir Balakin Method and apparatus for intensity control of a charged particle beam extracted from a synchrotron
US8129699B2 (en) 2008-05-22 2012-03-06 Vladimir Balakin Multi-field charged particle cancer therapy method and apparatus coordinated with patient respiration
US8229072B2 (en) * 2008-07-14 2012-07-24 Vladimir Balakin Elongated lifetime X-ray method and apparatus used in conjunction with a charged particle cancer therapy system
CN104597115B (zh) * 2015-02-12 2019-03-19 中国科学院光电研究院 极紫外辐照材料测试系统的真空获得装置及相应测试方法
WO2018039363A1 (en) 2016-08-23 2018-03-01 Randall May International, Inc. Instrument carrier with auto-release articulating back brace
CN111065887A (zh) * 2017-09-12 2020-04-24 Asml控股股份有限公司 光束指向监测和补偿系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
US20010038442A1 (en) * 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Method and apparatus for a non-contact scavenging seal
US20020083409A1 (en) * 2000-09-12 2002-06-27 Hamm Uwe W. Process and device for in-situ decontamination of a EUV lithography device
EP1460479A2 (en) * 2003-03-20 2004-09-22 ASML Holding N.V. Method and apparatus for recycling gases in a lithography tool

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225636A (ja) * 1982-06-25 1983-12-27 バッテル・ディベロプメント・コーポレーション Ｘ線を対象物に照射する装置
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
JPH0744020B2 (ja) * 1986-05-13 1995-05-15 日本電信電話株式会社 プラズマｘ線源のｘ線取り出し装置
US4866517A (en) 1986-09-11 1989-09-12 Hoya Corp. Laser plasma X-ray generator capable of continuously generating X-rays
JPS63292553A (ja) * 1987-05-25 1988-11-29 Agency Of Ind Science & Technol Ｘ線発生装置におけるプラズマ飛散防止機構
JP2572787B2 (ja) * 1987-11-18 1997-01-16 株式会社日立製作所 Ｘ線発生装置
US5103102A (en) * 1989-02-24 1992-04-07 Micrion Corporation Localized vacuum apparatus and method
EP1026549B1 (en) 1994-04-08 2007-02-28 Canon Kabushiki Kaisha Processing system adapted for semiconductor device manufacture
US6341006B1 (en) * 1995-04-07 2002-01-22 Nikon Corporation Projection exposure apparatus
EP0826629B1 (en) * 1996-08-27 2002-11-20 The Boc Group, Inc. Recovery of noble gases
US6133577A (en) * 1997-02-04 2000-10-17 Advanced Energy Systems, Inc. Method and apparatus for producing extreme ultra-violet light for use in photolithography
JPH10221499A (ja) 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US5763930A (en) * 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
US6376329B1 (en) 1997-08-04 2002-04-23 Nikon Corporation Semiconductor wafer alignment using backside illumination
JPH11204411A (ja) 1998-01-19 1999-07-30 Nikon Corp 塗布現像露光装置
AU3957599A (en) 1998-05-29 1999-12-20 Nikon Corporation Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method
US6385290B1 (en) 1998-09-14 2002-05-07 Nikon Corporation X-ray apparatus
WO2000019496A1 (fr) * 1998-09-28 2000-04-06 Hitachi, Ltd. Generateur au plasma laser de rayons x, dispositif d'alignement de semiconducteurs possedant ce generateur et procede d'exposition de semiconducteurs
JP3317957B2 (ja) * 1999-03-15 2002-08-26 サイマー インコーポレイテッド ブラストシールドを備えるプラズマフォーカス高エネルギフォトン源
US6190835B1 (en) * 1999-05-06 2001-02-20 Advanced Energy Systems, Inc. System and method for providing a lithographic light source for a semiconductor manufacturing process
JP2001108799A (ja) 1999-10-08 2001-04-20 Nikon Corp Ｘ線発生装置、ｘ線露光装置及び半導体デバイスの製造方法
EP1098225A3 (en) 1999-11-05 2002-04-10 Asm Lithography B.V. Lithographic projection apparatus with purge gas system and method using the same
CA2392919A1 (en) * 1999-12-06 2001-06-07 Glaxo Group Limited Systems and methods to facilitate multiple order combinatorial chemical processes
US6469310B1 (en) * 1999-12-17 2002-10-22 Asml Netherlands B.V. Radiation source for extreme ultraviolet radiation, e.g. for use in lithographic projection apparatus
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
US6538257B2 (en) 1999-12-23 2003-03-25 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, and extremely short-wave radiation source unit
US6493423B1 (en) * 1999-12-24 2002-12-10 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
JP2001345263A (ja) * 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
US6667484B2 (en) * 2000-07-03 2003-12-23 Asml Netherlands B.V. Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1186958B1 (en) 2000-09-04 2007-03-14 ASML Netherlands B.V. Lithographic projection apparatus
US6576912B2 (en) * 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
US6614505B2 (en) 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
JPWO2002056332A1 (ja) 2001-01-10 2004-05-20 株式会社荏原製作所 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法
JP2002289585A (ja) 2001-03-26 2002-10-04 Ebara Corp 中性粒子ビーム処理装置
DE10134033A1 (de) 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung/weicher Röntgenstrahlung
DE10139677A1 (de) 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
EP1381919A1 (en) 2001-04-17 2004-01-21 Koninklijke Philips Electronics N.V. Euv-transparent interface structure
JP4995379B2 (ja) * 2001-06-18 2012-08-08 ギガフォトン株式会社 光源装置及びそれを用いた露光装置
JP2003068630A (ja) * 2001-08-29 2003-03-07 Kyocera Corp 露光装置
WO2003034153A2 (en) * 2001-10-12 2003-04-24 Koninklijke Philips Electronics N.V. Lithographic apparatus and device manufacturing method
US6762424B2 (en) 2002-07-23 2004-07-13 Intel Corporation Plasma generation
DE10238096B3 (de) 2002-08-21 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe
US7002168B2 (en) * 2002-10-15 2006-02-21 Cymer, Inc. Dense plasma focus radiation source
US6770895B2 (en) 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
JP2004170787A (ja) * 2002-11-21 2004-06-17 Toshiba Corp 表示装置およびその駆動方法
DE10256663B3 (de) 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10310623B8 (de) 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
ATE476859T1 (de) 2003-03-18 2010-08-15 Koninkl Philips Electronics Nv Einrichtung und verfahren zur erzeugung von extrem-ultraviolett-und/oder weicher röntgenstrahlung mittels eines plasmas

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
US20010038442A1 (en) * 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Method and apparatus for a non-contact scavenging seal
US20020083409A1 (en) * 2000-09-12 2002-06-27 Hamm Uwe W. Process and device for in-situ decontamination of a EUV lithography device
EP1460479A2 (en) * 2003-03-20 2004-09-22 ASML Holding N.V. Method and apparatus for recycling gases in a lithography tool

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MERTENS B M ET AL: "Mitigation of surface contamination from resist outgassing in EUV lithography", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 53, no. 1-4, June 2000 (2000-06-01), pages 659 - 662, XP004237857, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
KR20040045327A (ko) 2004-06-01
US6894293B2 (en) 2005-05-17
TWI331702B (en) 2010-10-11
JP2004172626A (ja) 2004-06-17
US20050169767A1 (en) 2005-08-04
US6770895B2 (en) 2004-08-03
EP1422568A2 (en) 2004-05-26
TW200411341A (en) 2004-07-01
US20040099816A1 (en) 2004-05-27
US7087911B2 (en) 2006-08-08
CN100476584C (zh) 2009-04-08
CN1503058A (zh) 2004-06-09
SG106161A1 (en) 2004-09-30
JP4516738B2 (ja) 2010-08-04
KR100822071B1 (ko) 2008-04-15
US20040155205A1 (en) 2004-08-12

Similar Documents

Publication Publication Date Title
EP1422568A3 (en) Method and apparatus for preventing the mixing of a light source gas with the main chamber gas in a lithography tool
EP1460479A3 (en) Method and apparatus for recycling gases in a lithography tool
EP1347652A3 (en) Method and apparatus for image display
EP1178544A3 (en) Semiconductor light emitting device and method for manufacturing same
TW200720700A (en) Uniform multiple light source etendue
WO2004055897A3 (en) Exposing apparatus and image forming apparatus using organic electroluminescence element
CA2315740A1 (en) Discharge lamp sources apparatus and methods
EP1121000A3 (en) Light source with organic layer and photoluminsecent layer
MY143898A (en) Light emitting device
DE602005024668D1 (en) Fluorometer
EP1526585A3 (en) Semiconductor light source for a projector
EP1263061A3 (en) Electroluminescent film device
EP0390285A3 (en) Discharge lamp lighting device
AR032323A1 (es) Extremo de lata y metodo de fabricacion de un extremo de lata
WO2002080288A3 (en) Current source methods and apparatus for light emitting diodes
DE602005023696D1 (de) Vorrichtung zur Erzeugung von Strahlung, Lithographiegerät, Verfahren zur Herstellung eines Bauteils und dieses
EP1396760A3 (en) Differential pumping system and exposure apparatus
EP2944981A3 (en) Composite bandwidth marine vibroseis array
EP1329938A3 (en) Ion irradiation system
EP1067376A3 (en) Fluorescence measuring apparatus
EP1191569A3 (en) Method for reducing plasma-induced damage
ATE392430T1 (de) Verfahren zur herstellung von dipeptiden
EP1617292A3 (en) Light source unit and exposure apparatus having the same
TW200632070A (en) Phosphor and method for producing same, and light-emitting device using same and method for manufacturing such device
EP1326198A3 (en) Illumination detection method and apparatus for led printbars

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ASML HOLDING N.V.

RTI1 Title (correction)

Free format text: METHOD AND APPARATUS FOR PREVENTING THE MIXING OF A LIGHT SOURCE GAS WITH THE MAIN CHAMBER GAS IN A LITHOGRAPHY TOOL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

17P Request for examination filed

Effective date: 20060724

AKX Designation fees paid

Designated state(s): DE FR GB IT NL

17Q First examination report despatched

Effective date: 20060929

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20081112