WO2000019496A1 - Generateur au plasma laser de rayons x, dispositif d'alignement de semiconducteurs possedant ce generateur et procede d'exposition de semiconducteurs - Google Patents

Generateur au plasma laser de rayons x, dispositif d'alignement de semiconducteurs possedant ce generateur et procede d'exposition de semiconducteurs Download PDF

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Publication number
WO2000019496A1
WO2000019496A1 PCT/JP1998/004338 JP9804338W WO0019496A1 WO 2000019496 A1 WO2000019496 A1 WO 2000019496A1 JP 9804338 W JP9804338 W JP 9804338W WO 0019496 A1 WO0019496 A1 WO 0019496A1
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WIPO (PCT)
Prior art keywords
metal oxide
laser
plasma
ray generator
target
Prior art date
Application number
PCT/JP1998/004338
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English (en)
Japanese (ja)
Inventor
Tetsuya Matsui
Nobuyoshi Kogawa
Original Assignee
Hitachi, Ltd.
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Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1998/004338 priority Critical patent/WO2000019496A1/fr
Publication of WO2000019496A1 publication Critical patent/WO2000019496A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means

Definitions

  • the present invention relates to a laser plasma X-ray generator that irradiates a target with laser light to generate plasma and generates X-rays from the plasma, a semiconductor exposure apparatus using the laser plasma X-ray generator, and Related to semiconductor exposure method. Background art
  • an electron beam irradiation type X-ray generator and a laser plasma X-ray generator are known.
  • the X-ray emission mechanism of the electron beam irradiation type X-ray generator is that when one irradiated electron flicks one inner shell electron of the target element, the inner shell electrons transition and emit X-rays.
  • Such an electron beam irradiation type X-ray generator having an X-ray wavelength band of several keV to several MeV is disclosed in JP-A-58-204451 and JP-A-2-267843. Published in Kaihei 2—309597.
  • the target is turned into a plasma by the laser (a large number of electrons are blown off), and multiply-charged ions are formed, which are recombined with the electrons.
  • X-rays are emitted during the process, and the X-ray wavelength band ranges from several OeV to several keV. Comparing these X-rays from the electron beam irradiation type X-ray generator with the X-rays from the laser plasma x-ray generator, the X-ray brightness is lower for the X-rays from the electron beam irradiation type X-ray generator. High for X-rays from a laser plasma X-ray generator. X-ray intensity of the X-rays from the laser plasma X-ray generating apparatus ing to 1 0 8 times the peak value for the luminance of the X-rays from the electron beam irradiation morphism X-ray generator. -In semiconductor exposure equipment, higher X-ray brightness is advantageous from the viewpoint of shortening the exposure time and preventing the occurrence of underexposure.
  • JP-A-6-281799 describes that X-rays are generated by irradiating a tape-shaped solid target to be wound with a laser beam.
  • JP-A-61-153935 describes that X-rays are generated by irradiating a dropped liquid metal with a laser beam.
  • Japanese Patent Application Laid-Open No. 2-1100297 describes that a bullet-shaped target having a small spot of laser light is irradiated with laser light to generate X-rays.
  • Japanese Patent Application No. 57-41167 describes that X-rays are generated by irradiating solidified rare gas or water particles with laser light.
  • No. 5577092 injects pressurized gas into a vacuum vessel, forms clusters in the injected gas, and irradiates it with laser light to generate X-rays. It is described.
  • JP-A-10-31099 describes that X-rays are generated using a target in which metal fine particles are scattered in a transparent substrate.
  • atoms and molecules in the target are optically broken down (optically broken down), ionized, and laser plasma is generated.
  • X-rays are generated from the generated laser plasma.
  • the laser beam intensity required for optical breakdown differs depending on the type and state of the target element.
  • Electron temperature and density of the laser plasma, the type of elements contained in the target, and varies the laser type and conditions, the number 1 0 0 e V or more electron temperature, 1 in the electron density 0 2 ° ⁇ 1 0 2 Plasma of about 2 / cm 3 is generated.
  • the X-rays generated are continuous spectra from the laser plasma due to the bremsstrahlung radiation of the electrons in the laser plasma, the free-free transition and the free-bundle transition in the plasma recombination process. X-rays are emitted, and characteristic X-rays are emitted by the process of bound-to-bound transition in the plasma recombination process.
  • the X-ray spectrum obtained at this time depends on the type of elements contained in the target, the electron temperature and the density of the laser plasma, and the like.
  • a semiconductor device exposing device that generates X-rays from a laser plasma and guides the generated X-rays to a semiconductor wafer to expose a semiconductor device pattern onto a semiconductor wafer includes an optical element that condenses the generated X-rays.
  • a multilayer mirror is used, but the wavelength band that can be reflected by this mirror is extremely limited.
  • Fig. 2 shows an example of the wavelength dependence of the reflectance in the case of a MoZSi multilayer mirror.
  • the band width of the wavelength band that can be reflected as shown here is 0.4 to 0.4. It has an extremely narrow wavelength width of 6 nm.
  • the X-rays generated from the laser plasma also have a high X-ray intensity in the wavelength band of such a mirror.
  • the essential condition of a laser plasma X-ray generator is that the X-ray conversion rate obtained when the laser beam intensity is used as the denominator and the X-ray intensity in the usable wavelength band is used as the numerator is high. .
  • the solid and liquid targets are made into particles with small laser diameters, debris is reduced because there are no particles around, and the X-ray conversion efficiency is the same as that of solids and liquids. It is difficult to stably supply each of them at the same time as the irradiation of laser light, and it is also difficult to stably generate X-rays.
  • the target of particles formed by freezing a chemically stable gas such as a rare gas does not generate debris because it becomes a chemically stable gas such as a rare gas even when it is melted. It is difficult to generate stable X-rays. X-ray conversion efficiency is lower than that of metal targets.
  • first object of the present invention is to provide a laser plasma X-ray generator having high X-ray conversion efficiency and low debris generation
  • a second object is to provide a laser plasma X-ray generator.
  • a third object of the present invention is to provide a semiconductor exposure method using the laser plasma X-ray generator.
  • a feature of the laser plasma X-ray generator of the present invention is that a metal oxide is a target. According to this feature, a high X-ray conversion rate unique to metal oxides can be obtained, and since the melting point of metal oxides is generally higher than that of metal alone, they are less likely to melt and generate debris. It can be reduced.
  • Another feature of the laser plasma X-ray generator according to the present invention is that the metal oxide is made into fine particles and the diameter of the metal oxide fine particles is made smaller than that of the laser beam irradiated to the target. . According to this feature, since more particles are present in the plasmatable region, the plasma can be reliably formed, and the heat conduction between the metal oxide fine particles is small. Since debris does not occur, the generation of debris can be further reduced.
  • Another feature of the laser plasma X-ray generator of the present invention resides in that metal oxide fine particles are injected together with gas into a laser beam irradiation section. According to this feature, the target in which the particles and the gas are mixed is ejected to become a fluid, and the target is always supplied to the laser pulse, so that the X-ray can be stably provided. Can be generated.
  • Another feature of the laser plasma X-ray generator of the present invention resides in that the fine particles or gas supplied as described above are recovered and supplied again. -According to this feature, since the fine particles or gas can be reused, the operating cost can be reduced.
  • the metal oxide is a solid or a sintered body, which is made into a rod shape, and is continuously fed from outside to inside the vacuum vessel. And to continuously extract the laser-irradiated part from the inside of the vacuum vessel to the outside.
  • a solid or sintered metal oxide can be continuously supplied and a laser plasma X-ray generator having a high X-ray conversion rate can be configured.
  • Another feature of the laser plasma X-ray generator of the present invention resides in that the metal oxide is in a powder form, and is applied to a tape-shaped substrate for use. At this time, it is necessary to have a device for applying powdered metal oxide to the tape-shaped substrate and a device for continuously supplying the tape coated with the metal oxide to the laser irradiation unit. It is in. According to this feature, a metal oxide can be continuously supplied, and a laser plasma X-ray generator having a high X-ray conversion rate can be configured.
  • the laser plasma X-ray generator of the present invention targeting a metal oxide is used to generate X-rays generated from the laser plasma X-ray generator.
  • the focusing mirror guides the light to the mask, and the X-ray reduction exposure mirror reduces the X-rays reflected by the mask and projects the reduced X-rays on the semiconductor wafer.
  • the generation of debris is small in the laser plasma X-ray generator, damage to the X-ray optical elements such as the condensing mirror, mask, X-ray reduction exposure mirror, etc. of the semiconductor exposure apparatus and the vacuum partition is prevented. Can be passed.
  • the exposure time does not become insufficient and the exposure time can be shortened.
  • FIG. 1 is an overall view of a semiconductor exposure apparatus using a laser plasma X-ray generator according to a first embodiment of the present invention.
  • FIG. 2 is a graph showing the wavelength dependence of the X-ray reflectivity in the case of a MoZSi multilayer mirror.
  • FIG. 3 is a graph showing an X-ray spectrum obtained by the laser plasma X-ray generation apparatus employed in the first embodiment of the present invention.
  • FIG. 4 is an overall view of a semiconductor exposure apparatus using a laser plasma X-ray generator according to a second embodiment of the present invention.
  • FIG. 5 is an overall view of a laser plasma X-ray generator according to a third embodiment of the present invention.
  • FIG. 6 is a graph showing an X-ray spectrum of X-rays obtained by a laser plasma X-ray generator according to a third embodiment of the present invention.
  • FIG. 7 is an overall view of a laser plasma X-ray generator according to a fourth embodiment of the present invention.
  • the inventors irradiate various targets with a laser and measure X-rays from laser plasma. As a result, they have found that metal oxides have a higher X-ray conversion rate than metal alone or gas alone.
  • FIG. 1 shows a semiconductor exposure apparatus using a laser plasma X-ray generator according to a first embodiment of the present invention.
  • the semiconductor exposure apparatus includes an X-ray generation unit 100, which is a laser plasma X-ray generation device that generates X-rays, and an exposure unit 200.
  • the exposure unit 200 guides the X-rays 14 generated by the X-ray generation unit 100 to the mask 16 by the X-ray focusing mirror 15 and reduces the mask pattern reflected by the mask 16 to X-ray exposure. It is reduced by the mirror 17 and projected onto the wafer 18 (sample).
  • Figure 2 shows an example of the reflectivity of the multilayer mirror used in the X-ray focusing mirror 15, the mask 16, and the X-ray reduction exposure mirror 17.
  • the band width of the wavelength band that can be reflected is an extremely narrow wavelength width of 0.4 nm
  • the center wavelength is the center wavelength in the case of this MoZSi multilayer mirror.
  • the wavelength is 13.7 nm.
  • the X-ray generator 100 which is a laser plasma X-ray generator, will be described in detail.
  • the X-ray generator 100 includes a vacuum vessel 5 surrounding the target, a target supply device 110 for supplying the mixed gas of fine particles into the vacuum vessel 5 as a target, It comprises a laser irradiation device 120 for irradiating the target 10 with the laser beam 2, and a target collection device 130 for collecting the mixed gas of fine particles in the vacuum vessel 5.
  • the target supply device 110 includes a fine particle tank 6 filled with metal oxide fine particles having a small laser focusing diameter, a gas cylinder 7 filled with gas, and a metal oxide fine particle supplied from the fine particle tank 6. And a mixer 8 for mixing a rare gas supplied from a gas cylinder 7 and a supply nozzle 9 for injecting a mixed gas of fine particles produced by the mixer 8 into a vacuum vessel 5.
  • a mixer 8 for mixing a rare gas supplied from a gas cylinder 7 and a supply nozzle 9 for injecting a mixed gas of fine particles produced by the mixer 8 into a vacuum vessel 5.
  • metal oxide fine particles were obtained only with the fine particle tank 6 and the supply nozzle 9. You may supply them.
  • the metal oxide fine particles used are Cr, Mn, Co, Ni, CuSr, Y, Zr, Nb, Mo, Ag, In, Sn, Sb. , Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Tb, Ho, Ta, W, Pb. Yes, it has an X-ray peak suitable for the reflection wavelength band of the multilayer mirror of the X-ray focusing mirror 15, mask 16,-and X-ray reduction exposure mirror 17 used in the exposure unit 200 Try to select one.
  • the laser irradiation device 120 includes a laser light generator 1 that generates the laser light 2 and a converging lens 3 that converges the laser light 2.
  • the laser light generator 1 generates a laser beam 2 such as a YAG laser or an excimer laser with a pulse width of several 10 ns or less and an output per pulse of several 10 mJ to several 10 J. Is good.
  • the laser beam 2 is converged by the converging lens 3 on the fine particle mixed gas target in the vacuum vessel 5 so that the diameter becomes several 10 to several 100 ⁇ m.
  • the energy density on the gaseous particle-mixed target 10 should be about 10 15 to 10 22 W m 2 .
  • the target recovery device 130 is provided with a recovery duct 12 and a recovery device 13 which are supplied into the vacuum vessel 5 and draw metal oxide fine particles and gas which have not been turned into plasma or returned to a steady state. Prepare.
  • the injection port of the supply nozzle 9 and the recovery port of the recovery duct 12 are disposed so as to face each other.
  • the laser light 2 from the laser irradiation device 120 passes through the laser light transmission window 4 provided on the wall surface of the vacuum vessel 5 and irradiates the fine particle mixed gas 10 injected from the supply nozzle 9.
  • the inside of the vacuum container 5 is maintained at a low pressure by a vacuum pump (not shown).
  • a vacuum pump not shown.
  • An example Example the pressure in the vacuum vessel 5 and below 1 0 _ 2-to rr, if the pressure in the supply Roh nozzle 9 to several atmospheres, particulate mixture gas 1 0, that Do the state of fluid ejected . Then, the particulate mixed gas 10 that has not been turned into plasma or has returned to the steady state enters the recovery duct 12 and is removed from the vacuum vessel 5.
  • the metal oxide and gas in the particulate mixed gas target 10 are optically dielectrically broken by the strong electric field of the laser beam 2 and the like. (Optical breakdown) to ionize.
  • the electrons generated by the ionization absorb the energy of the laser beam 2 through processes such as reverse braking radiation and are heated, so that the high-temperature and high-density areas are within a range where the laser beam 2 of the gas target 10 is mixed.
  • a laser plasma 11 is formed.
  • the electron temperature and density of the laser plasma 11 vary depending on the type of metal oxide and gas contained in the particulate mixed gas target 10 and the type and conditions of the laser. 1 in the electron density 0 2 ° ⁇ 1 0 may 2 2 / cm 3 about the plasma is generated.
  • Laser plasma 11 Due to the bremsstrahlung emission of electrons in the plasma, free-free transition and free-bundle-transition process in the plasma recombination process,
  • X-rays of a continuous spectrum are emitted from 11 and characteristic X-rays are emitted due to the bound-to-bound transition in the plasma recombination process.
  • X-rays emitted from the laser plasma 11 are used in the adjacent exposure unit 200.
  • FIG. 3 shows the X-ray spectrum obtained by the present embodiment.
  • S n 0 2 fine particles particle size: about 1 0 nm
  • a r gas cylinder gas pressure: 7 atm
  • There laser light output: 700 mJ // pulse, pulse width: 5 ns
  • (Wavelength: 1064 nm) was condensed by a lens (focal length: 200 mm) and irradiated.
  • a rare gas X e, K r
  • 0 2 gas has a peak of several going between 1 0 to 1 3 nm, as shown in FIG. 3, on the other hand, S n itself is subjected to 1 3 ⁇ 1 6 nm as shown in FIG. 6 Has a broad peak.
  • the X-ray conversion efficiency in the reflection wavelength band of the multilayer mirror is higher than that of the rare gas target. high.
  • the metal oxide fine particle mixed gas target has a low thermal conductivity of the metal oxide and a very low heat conduction to the metal oxide fine particles other than the laser irradiated part, so that the metal oxide other than the laser irradiated part is not oxidized. Debris can be reduced because the material particles do not melt.
  • a target in which metal oxide fine particles and a gas are mixed is injected into the vacuum container 5, and a laser beam is applied to the target that has been injected and becomes a fluid. Since irradiation is performed, the target is always supplied to the laser pulse, so that X-rays can be generated stably.
  • the inside of the vacuum container 5 can be kept at a low pressure, and absorption loss of generated X-rays can be prevented.
  • a second embodiment of the present invention will be described with reference to FIG.
  • a separator 30 for separating metal oxide fine particles and gas is provided in the target collector 13 in the first embodiment, and the gas collected from the target collected in the collector 13
  • the metal oxide fine particles are separated and recovered by a separator 30, and the separated metal oxide fine particles are returned to the original fine particle tank 6 and the separated gas is returned to the gas cylinder 7 for recycling. It was done.
  • Other contents are the same as those of the first embodiment of the present invention.
  • a third embodiment of the present invention will be described with reference to FIG.
  • a solid or sintered metal oxide is used as a target.
  • a solid or sintered body of metal oxide is continuously inserted into a vacuum vessel 5 by a rod inserter 24 as a rod-shaped target 23. Then, the rod-shaped target 23 irradiated with the laser is taken out of the vacuum vessel.
  • Figure 6 shows the X-ray spectrum obtained when the metal oxide was used as a solid or sintered body.
  • S n 0 2 solid as the metal oxide
  • there laser beam output: 7 0 0 m J // pulse, pulse width: 5 ns, wavelength: 1 0 6 4 nm
  • Focus with a lens (focal length: 200 mm) Irradiated.
  • the spectra for simple metals Sn, Au, Ni
  • Ni Let 's can be seen from this figure, the S n 0 2 solid, whereas strong peak around the 1 3. 7 nm as in the case of FIG. 3 is one, with only simple metal, the X-ray intensity You can see that it is weak.
  • the X-rays thus obtained are introduced into the exposure unit 200 of the first embodiment of the present invention, and a mask pattern is formed on a semiconductor wafer 18 similarly to the first embodiment of the present invention. Used for projection
  • the metal oxide fine particles used here are Cr, Mn, Co, Ni, Cu, Sr, Y, Zr, and Nr. b, Mo, Ag, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Tb, Ho, Ta, It is an oxide of one or more of the metals W and Pb, and is an X-ray focusing mirror 15, mask 16 and X-ray reduction exposure mirror 17 used in the exposure unit 200. The one that has an X-ray peak suitable for the reflection wavelength band of the multilayer mirror is selected. Other details are the same as in the first embodiment of the present invention.
  • the metal oxide solid is used, so that the X-ray conversion efficiency in the reflection wavelength band of the multilayer mirror is higher than that of the metal single target. Since the metal oxide solid has a low thermal conductivity, the metal oxide solid is less likely to melt the metal fine particles other than the laser irradiating portion, thereby reducing debris.
  • a metal oxide is made into a powdery form and applied to a tape-shaped substrate.
  • a powdery metal oxide is applied to the surface of the tape-like target 25 by a metal oxide applying device 28.
  • the method of application is to disperse the powdered metal oxide in a solvent and then apply it by spraying, or to disperse the powdered metal oxide in the solvent and then use the tape-like target 25 in the solvent.
  • a method of dipping and applying is applicable.
  • a drying means may be incorporated in the metal oxide coating device 28.
  • the tape-like target 25 coated with the powdered metal oxide is supplied by a tape-like target supply / reproduction system 140 composed of a tape inserter 26 and a roll 27. It is supplied to the laser irradiating unit, and after the laser irradiation, is re-coated by the metal oxide coating device 28 and is used continuously.
  • Resulting X-ray spectrum is Ri similar der to FIG. 6, in the case of using a M o ZS i multilayer Makumi error, in S n 0 2 solid, S n, A u, F e, of the N i single metal More than three times the X-ray conversion rate can be obtained.
  • the X-rays thus obtained are introduced into the exposure unit 200 of the first embodiment of the present invention, and a mask pattern on a semiconductor wafer 18 is formed in the same manner as in the first embodiment of the present invention. Used to project
  • the metal oxide fine particles used here are Cr, Mn, Fe, Co, Ni, Cu, Zn, Sr, Y, Zr, Nb, o, Ag, Any one of In, Sn, Sb, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Tb, Ho, Ta, W, and Pb. It is an oxide of one or more metals, and has a reflection wavelength band of the multilayer mirror of the X-ray focusing mirror 15, mask 16, and X-ray reduction exposure mirror 17 used in the exposure unit 200. Try to select one with a suitable X-ray peak. Other details are the same as in the first embodiment of the present invention. According to this embodiment, the following effects can be obtained. In this embodiment, the use of the tape-shaped target coated with the metal oxide powder on the surface makes the X-ray conversion efficiency in the reflection wavelength band of the multilayer mirror higher than that of the single metal target. high.
  • the metal oxide powder itself has low heat conduction, the metal oxide powder has little melting of metal fine particles other than the laser irradiating portion, and can reduce debris.
  • the X-ray conversion efficiency in the reflected wavelength band of a multilayer mirror used in an exposure unit has been known. It is higher than the target of rare gas or metal alone.
  • the metal oxide has low heat conduction, and the metal oxide is hardly melted in portions other than the laser irradiated portion, so that debris can be reduced.

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Abstract

Générateur au plasma laser de rayons X possédant une efficacité élevée de conversion de rayons X et produisant peu de débris, dispositif d'alignement de semiconducteurs mettant en application ce générateur et procédé d'exposition de semiconducteurs. Dans ce générateur, la cible à irradier au faisceau laser est constituée par un oxyde métallique. Le dispositif d'alignement de semiconducteurs comprenant ce générateur est caractérisé par le fait qu'il comporte également un miroir de concentration dirigeant les rayons X générés par le générateur vers un masque, ainsi qu'un miroir d'exposition à convergence de rayons X faisant converger les rayons X réfléchis par le masque et projetant ces rayons X sur une tranche de semiconducteur. Le procédé d'exposition de semiconducteurs consiste à concentrer les rayons X générés par le générateur au plasma laser de rayons X dans lequel la cible est constituée par un oxyde métallique, à les appliquer à un masque qui les réfléchit, à faire converger les rayons X réfléchis et projeter un motif de masque sur la tranche de semiconducteur afin de l'exposer.
PCT/JP1998/004338 1998-09-28 1998-09-28 Generateur au plasma laser de rayons x, dispositif d'alignement de semiconducteurs possedant ce generateur et procede d'exposition de semiconducteurs WO2000019496A1 (fr)

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WO2004086467A1 (fr) * 2003-03-26 2004-10-07 Kansai Technology Licensing Organization Co., Ltd. Source de lumiere a ultraviolet lointain et cible pour cette source de lumiere
WO2006001459A1 (fr) * 2004-06-24 2006-01-05 Nikon Corporation Source de lumiere euv, equipement d’exposition euv et procede de fabrication de dispositif semi-conducteur
JP2008277204A (ja) * 2007-05-07 2008-11-13 Japan Atomic Energy Agency レーザー駆動の小型・高コントラスト・コヒーレントｘ線発生装置及びその発生方法
JP2008294393A (ja) * 2007-04-27 2008-12-04 Komatsu Ltd Ｅｕｖ光発生装置におけるターゲット供給装置
US7491955B2 (en) 2004-06-24 2009-02-17 Nikon Corporation EUV light source, EUV exposure system, and production method for semiconductor device
JP2010526449A (ja) * 2007-05-09 2010-07-29 エーエスエムエル ネザーランズ ビー．ブイ． 放射発生デバイス、リソグラフィ装置、デバイス製造方法、およびその方法により製造されたデバイス
JP2011515810A (ja) * 2008-03-21 2011-05-19 エーエスエムエル ネザーランズ ビー．ブイ． ターゲット材料、放射源、ｅｕｖリソグラフィ装置およびこれらを用いたデバイス製造方法
JP2012049529A (ja) * 2010-08-30 2012-03-08 Media Lario Srl Ｇｉｃミラー及びスズロッドｅｕｖ・ｌｐｐターゲットシステムを備える光源集光モジュール
JP2015526839A (ja) * 2012-06-14 2015-09-10 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ Ｘ線源、ｘ線を発生させる方法ならびに単色のｘ線を放射するｘ線源の使用
KR20200098707A (ko) * 2018-01-10 2020-08-20 케이엘에이 코포레이션 광대역 레이저 생성 플라즈마 조명기를 갖는 x-선 계측 시스템

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JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法

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JP4516738B2 (ja) * 2002-11-21 2010-08-04 エーエスエムエル ホールディング エヌ．ブイ． リソグラフィー装置中の主要室ガスから光源ガスを分離する装置および方法
JP2004172626A (ja) * 2002-11-21 2004-06-17 Asml Holding Nv リソグラフィー装置中の主要室ガスから光源ガスを分離する装置および方法
WO2004086467A1 (fr) * 2003-03-26 2004-10-07 Kansai Technology Licensing Organization Co., Ltd. Source de lumiere a ultraviolet lointain et cible pour cette source de lumiere
US7521702B2 (en) 2003-03-26 2009-04-21 Osaka University Extreme ultraviolet light source and extreme ultraviolet light source target
WO2006001459A1 (fr) * 2004-06-24 2006-01-05 Nikon Corporation Source de lumiere euv, equipement d’exposition euv et procede de fabrication de dispositif semi-conducteur
JPWO2006001459A1 (ja) * 2004-06-24 2008-04-17 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法
US7491955B2 (en) 2004-06-24 2009-02-17 Nikon Corporation EUV light source, EUV exposure system, and production method for semiconductor device
US7741616B2 (en) 2004-06-24 2010-06-22 Nikon Corporation EUV light source, EUV exposure equipment, and semiconductor device manufacturing method
JP4683231B2 (ja) * 2004-06-24 2011-05-18 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法
JP2008294393A (ja) * 2007-04-27 2008-12-04 Komatsu Ltd Ｅｕｖ光発生装置におけるターゲット供給装置
JP2008277204A (ja) * 2007-05-07 2008-11-13 Japan Atomic Energy Agency レーザー駆動の小型・高コントラスト・コヒーレントｘ線発生装置及びその発生方法
JP2010526449A (ja) * 2007-05-09 2010-07-29 エーエスエムエル ネザーランズ ビー．ブイ． 放射発生デバイス、リソグラフィ装置、デバイス製造方法、およびその方法により製造されたデバイス
JP4917670B2 (ja) * 2007-05-09 2012-04-18 エーエスエムエル ネザーランズ ビー．ブイ． 放射発生デバイス、リソグラフィ装置、デバイス製造方法、およびその方法により製造されたデバイス
JP2011515810A (ja) * 2008-03-21 2011-05-19 エーエスエムエル ネザーランズ ビー．ブイ． ターゲット材料、放射源、ｅｕｖリソグラフィ装置およびこれらを用いたデバイス製造方法
JP2012049529A (ja) * 2010-08-30 2012-03-08 Media Lario Srl Ｇｉｃミラー及びスズロッドｅｕｖ・ｌｐｐターゲットシステムを備える光源集光モジュール
JP2015526839A (ja) * 2012-06-14 2015-09-10 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ Ｘ線源、ｘ線を発生させる方法ならびに単色のｘ線を放射するｘ線源の使用
US9520262B2 (en) 2012-06-14 2016-12-13 Siemens Aktiengesellschaft X-ray source, method for producing X-rays and use of an X-ray source emitting monochromatic X-rays
KR20200098707A (ko) * 2018-01-10 2020-08-20 케이엘에이 코포레이션 광대역 레이저 생성 플라즈마 조명기를 갖는 x-선 계측 시스템
KR102589632B1 (ko) * 2018-01-10 2023-10-13 케이엘에이 코포레이션 광대역 레이저 생성 플라즈마 조명기를 갖는 x-선 계측 시스템

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