EP1393388A1 - Verfahren zur erzeugung von leitfähigen strukturen mittels drucktechnik sowie daraus hergestellte aktive bauelemente für integrierte schaltungen - Google Patents
Verfahren zur erzeugung von leitfähigen strukturen mittels drucktechnik sowie daraus hergestellte aktive bauelemente für integrierte schaltungenInfo
- Publication number
- EP1393388A1 EP1393388A1 EP02726090A EP02726090A EP1393388A1 EP 1393388 A1 EP1393388 A1 EP 1393388A1 EP 02726090 A EP02726090 A EP 02726090A EP 02726090 A EP02726090 A EP 02726090A EP 1393388 A1 EP1393388 A1 EP 1393388A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductive
- printing
- organic
- produced
- conductive structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000007639 printing Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000007645 offset printing Methods 0.000 claims description 4
- 239000012044 organic layer Substances 0.000 claims description 4
- 229920000767 polyaniline Polymers 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 230000005595 deprotonation Effects 0.000 claims description 2
- 238000010537 deprotonation reaction Methods 0.000 claims description 2
- 230000005588 protonation Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229940077844 iodine / potassium iodide Drugs 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1275—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by other printing techniques, e.g. letterpress printing, intaglio printing, lithographic printing, offset printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0113—Female die used for patterning or transferring, e.g. temporary substrate having recessed pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0534—Offset printing, i.e. transfer of a pattern from a carrier onto the substrate by using an intermediate member
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1142—Conversion of conductive material into insulating material or into dissolvable compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
Definitions
- the invention relates to a method for producing conductive structures and active components made therefrom, in particular organic field effect transistors (OFETs), organic light-emitting diodes (OLEDs) and integrated circuits comprising them.
- OFETs organic field effect transistors
- OLEDs organic light-emitting diodes
- conductive and finely structured electrodes or electrode tracks are required, which can be made from conductive materials such as metals, organic conductive polymers or particle-filled polymers.
- Organic layers can be photochemically (cf. C.J. Drury et al., Appl. Phys. Lett. 73 (1) (1998) 108 and G.H. Gelink et al., Appl. Phys. Lett. 77 (10) (2000)
- Applicant's DE 10047171.4 which has not yet been published, describes a method for producing an electrode and / or conductor track from organic material by contacting it with a chemical compound.
- the organic See materials have the disadvantage that they are not as stable as corresponding inorganic materials.
- the present invention accordingly relates to a method for producing conductive layers, which is characterized in that printed conductors or electrodes are produced in a conductive layer by means of a printing technique.
- the method according to the invention is advantageously suitable for producing both organic and inorganic conductive structures or conductor tracks or electrodes.
- a conductive organic layer is advantageously, for example, doped polyaniline, in which by printing with a basic printing medium by deprotonation a non-conductive matrix is generated. It is also possible to produce a conductive structure in a non-conductive matrix by printing on undoped polyaniline with an acidic printing medium by protonation. This matrix can then be removed and, if necessary, filled with a semiconductor layer.
- an inorganic conductive material advantageously gold, aluminum, copper or indium tin oxide (ITO ) to select.
- the metallic conductive layer which can be, for example, 1 to 100 nm thick, is first applied to a substrate or a lower layer, for example by vapor deposition. Then a suitable one is made using the gravure offset printing technique
- Etching paste printed negative in the negative to the producing conductor track or electrode whereby the conductive layer in the printed areas is etched away with formation of the conductor track or electrode.
- an etching resist can also be printed positively, which is removed again after the etching step.
- this paste can have a basic or acid character.
- the method according to the invention is advantageously designed to be continuous, which ensures mass production.
- the invention also relates to an organic field-effect transistor in which source, drain and / or gate electrodes are produced by the method according to the invention.
- the invention also relates to organic light-emitting diodes in which the conductive structures are formed by a method according to the invention.
- the invention also relates to organic diodes, in particular rectifier diodes.
- the invention also relates to integrated circuits comprising at least one OFET or another active component which is produced by the method according to the invention.
- step A the highly viscous printing paste 2 is removed from the printing template (cliché) 3 by means of a printing stamp 1.
- the pressure stamp 1 is advantageously made of a material that is resistant to the reactive printing paste 2.
- the swell-resistant, acid-resistant silicone is suitable for the formation of inorganic conductor tracks or electrodes.
- the printing template 3 contains the printing paste as a negative cliché of the conductor tracks or electrodes to be produced.
- steps B and C the printing paste 2 is transferred to the substrate 5 coated with a conductive layer 4 by means of the printing stamp 1.
- the printing paste 2 adheres to the printing stamp 1 in the form of discrete structures, which enables the conductive layer 4 to be treated in order to structure it.
- the conductive layer 4 consists of a 1 to 100 m thick, conductive metal layer, such as a layer made of gold, aluminum, copper or ITO, which has been vapor-deposited.
- the printing paste 2 has caustic properties and has an iron (III) chloride content for the copper application, iodine / potassium iodide for the gold application, hydrogen halide for the ITO application and aluminum for the application on hydrochloric acid or sodium hydroxide solution.
- the substrate is freely selectable and can be a silicon substrate or a thin glass layer.
- the conductive layer is formed.
- further processing steps can follow as described above.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10126859A DE10126859A1 (de) | 2001-06-01 | 2001-06-01 | Verfahren zur Erzeugung von leitfähigen Strukturen mittels Drucktechnik sowie daraus hergestellte aktive Bauelemente für integrierte Schaltungen |
DE10126859 | 2001-06-01 | ||
PCT/DE2002/001717 WO2002099908A1 (de) | 2001-06-01 | 2002-05-13 | Verfahren zur erzeugung von leitfähigen strukturen mittels drucktechnik sowie daraus hergestellte aktive bauelemente für integrierte schaltungen |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1393388A1 true EP1393388A1 (de) | 2004-03-03 |
Family
ID=7686980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02726090A Withdrawn EP1393388A1 (de) | 2001-06-01 | 2002-05-13 | Verfahren zur erzeugung von leitfähigen strukturen mittels drucktechnik sowie daraus hergestellte aktive bauelemente für integrierte schaltungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040209191A1 (de) |
EP (1) | EP1393388A1 (de) |
DE (1) | DE10126859A1 (de) |
WO (1) | WO2002099908A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
US6773614B2 (en) * | 2002-04-16 | 2004-08-10 | Hewlett-Packard Development Company, L.P. | Method of patterning conductive films |
DE10240105B4 (de) * | 2002-08-30 | 2005-03-24 | Infineon Technologies Ag | Herstellung organischer elektronischer Schaltkreise durch Kontaktdrucktechniken |
US20060160266A1 (en) * | 2003-01-21 | 2006-07-20 | Adolf Bernds | Organic electronic component and method for producing organic electronic devices |
DE10330062A1 (de) * | 2003-07-03 | 2005-01-27 | Siemens Ag | Verfahren und Vorrichtung zur Strukturierung von organischen Schichten |
DE102004031719A1 (de) * | 2004-06-30 | 2006-01-19 | Infineon Technologies Ag | Verfahren zum Herstellen einer elektrisch funktionellen Schichtstruktur |
DE102005017655B4 (de) | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
US7476603B2 (en) * | 2005-06-07 | 2009-01-13 | Hewlett-Packard Development Company, L.P. | Printing conductive patterns using LEP |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
DE102006047388A1 (de) | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische Schaltung |
DE102007062944B4 (de) | 2007-12-21 | 2016-03-17 | Leonhard Kurz Stiftung & Co. Kg | Elektronische Schaltung |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3512052A (en) * | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
JPS543594B2 (de) * | 1973-10-12 | 1979-02-24 | ||
JPS54101176A (en) * | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) * | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
EP0239808B1 (de) * | 1986-03-03 | 1991-02-27 | Kabushiki Kaisha Toshiba | Strahlungsdetektor |
GB2215307B (en) * | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
US6331356B1 (en) * | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
FR2673041A1 (fr) * | 1991-02-19 | 1992-08-21 | Gemplus Card Int | Procede de fabrication de micromodules de circuit integre et micromodule correspondant. |
US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
JPH0580530A (ja) * | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5173835A (en) * | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
JP2709223B2 (ja) * | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | 非接触形携帯記憶装置 |
JP3457348B2 (ja) * | 1993-01-15 | 2003-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
JP3460863B2 (ja) * | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5556706A (en) * | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
JP3068430B2 (ja) * | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
US5652645A (en) * | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
JP3415850B2 (ja) * | 1995-08-04 | 2003-06-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | リソグラフィによる表面または薄層の改変 |
GB2310493B (en) * | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
JP3080579B2 (ja) * | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | エアリア・グリッド・アレイ・パッケージの製造方法 |
US6586763B2 (en) * | 1996-06-25 | 2003-07-01 | Northwestern University | Organic light-emitting diodes and methods for assembly and emission control |
US6143412A (en) * | 1997-02-10 | 2000-11-07 | President And Fellows Of Harvard College | Fabrication of carbon microstructures |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
US6251513B1 (en) * | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
US6083104A (en) * | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
US6045977A (en) * | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
US6033202A (en) * | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
US5967048A (en) * | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
US6027595A (en) * | 1998-07-02 | 2000-02-22 | Samsung Electronics Co., Ltd. | Method of making optical replicas by stamping in photoresist and replicas formed thereby |
US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
US6541539B1 (en) * | 1998-11-04 | 2003-04-01 | President And Fellows Of Harvard College | Hierarchically ordered porous oxides |
US6506438B2 (en) * | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) * | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
US6498114B1 (en) * | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6383664B2 (en) * | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
TW556357B (en) * | 1999-06-28 | 2003-10-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
AU7103300A (en) * | 1999-08-31 | 2001-03-26 | E-Ink Corporation | Method for forming a patterned semiconductor film |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) * | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
US6294398B1 (en) * | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
US6329226B1 (en) * | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
DE10033112C2 (de) * | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
US6586791B1 (en) * | 2000-07-19 | 2003-07-01 | 3M Innovative Properties Company | Transistor insulator layer incorporating superfine ceramic particles |
WO2002015264A2 (de) * | 2000-08-18 | 2002-02-21 | Siemens Aktiengesellschaft | Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung |
KR20020036916A (ko) * | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
KR100390522B1 (ko) * | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
US20020170897A1 (en) * | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
US6870180B2 (en) * | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP2003089259A (ja) * | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
US7351660B2 (en) * | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6946332B2 (en) * | 2002-03-15 | 2005-09-20 | Lucent Technologies Inc. | Forming nanoscale patterned thin film metal layers |
US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
-
2001
- 2001-06-01 DE DE10126859A patent/DE10126859A1/de not_active Ceased
-
2002
- 2002-05-13 WO PCT/DE2002/001717 patent/WO2002099908A1/de not_active Application Discontinuation
- 2002-05-13 EP EP02726090A patent/EP1393388A1/de not_active Withdrawn
- 2002-05-13 US US10/479,238 patent/US20040209191A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
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See references of WO02099908A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2002099908A1 (de) | 2002-12-12 |
US20040209191A1 (en) | 2004-10-21 |
DE10126859A1 (de) | 2002-12-12 |
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