EP1362374B1 - Organische leuchtdiodenanzeigevorrichtung mit abschirmelektroden - Google Patents
Organische leuchtdiodenanzeigevorrichtung mit abschirmelektroden Download PDFInfo
- Publication number
- EP1362374B1 EP1362374B1 EP02711722.5A EP02711722A EP1362374B1 EP 1362374 B1 EP1362374 B1 EP 1362374B1 EP 02711722 A EP02711722 A EP 02711722A EP 1362374 B1 EP1362374 B1 EP 1362374B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin
- oled
- film transistor
- shield electrodes
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 16
- 230000003071 parasitic effect Effects 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 229920001621 AMOLED Polymers 0.000 description 11
- 238000005401 electroluminescence Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Definitions
- the present invention relates to a display device, and more particularly to an organic light emitting diode display having shield electrodes.
- the polymeric or organic light emitting diodes are electroluminescent(EL) layers that emit light generated by radiative recombination of injected electrons and holes within one or more organic EL layers or an organic EL region thereof.
- the OLED displays employing the OLED have been attracting more attention because of their various advantages including simple structures, fast response times and wide viewing angles.
- FIG. 1A is a top view of a general active matrix OLED(AMOLED) display device.
- a reference numeral 10 denotes an OLED display device.
- the OLED display device 10 has an OLED display 12, a gate multiplexer 16, and a driver 18.
- the OLED display 12 consists of a plurality of pixels 14 in a matrix array form for displaying images, for example.
- a reference numeral C denotes a portion of the OLED display 12 in store for enlargement of pixels
- FIG. 1B is a partially enlarged view of the OLED display of FIG. 1A , taken from the portion C of FIG. 1A .
- each of the pixels 14 has an OLED 22 and a thin-film (TFT) drive circuit 24.
- Address and data lines in FIG. 1B are connected to the gate multiplexer 16 and the driver 18, respectively, as shown in FIG. 1A .
- FIG. 1C is a cross-sectioned view for one pixel, taken along lines A-A' of FIG. 1B , showing that the OLED 22 and the TFT drive circuit 24 are formed on a glass substrate 32.
- the substrate 32 may be transparent or opaque.
- the OLED display may be configured to emit light through the substrate 32 or through the cathode layer.
- FIG. 1C shows such a pixel emitting light through the substrate 32.
- the anode layer is typically made of a transparent conducting material, while the cathode layer is typically made of a conducting metal with a low work function.
- the anode layer is formed as a transparent bottom electrode, while the cathode layer is formed as a continuous top electrode over the OLED layer.
- the aperture ratio or fill factor which is defined as the ratio of light emitting display area to the total pixel area, should be high enough to ensure display quality.
- the AMOLED display 10 in FIG. 1A is based on light emission through an aperture on the glass substrate 32 where the backplane electronics is integrated. Increasing the on-pixel density of TFT integration for stable drive current reduces the size of the aperture. The same problem happens when pixel sizes are scaled down.
- FIG. 2 is a cross-sectioned view for a pixel formed with an OLED vertically stacked on the backplane electronics.
- a reference number 14 denotes the pixel.
- the pixel 14 has the OLED 31 and the backplane electronics 24 which are vertically stacked on the substrate 32.
- Reference numerals T1 and T2 denote thin-film transistors respectively. A more description of FIG. 2 can be found, later, when FIG. 3 is described.
- FIG. 1D is a view for showing an equivalent circuit of FIG. 1C .
- a 2-transistor driver circuit realized, for example, in polysilicon technology is illustrated for the equivalent circuit.
- the equivalent circuit can be applied to the AMLOED display as shown in FIG. 2 using amorphous silicon technology but with variation in TFT type and OLED location.
- a thin-film transistor T1 When a voltage Vaddress from the gate multiplexer 16 activates one of the address lines, a thin-film transistor T1 is turned on so that a voltage Vdata from the driver 18 starts charging a capacitor Cs through one of the data lines. At this time, the voltage Vdata also causes a gate capacitance of a driver thin-film transistor T2. Depending on the voltage Vdata on the data line, the capacitor Cs charges up to turn the driver transistor T2 on, which then starts conducting to drive the OLED 22 with an appropriate level of current.
- the address line is turned off, the transistor T1 is turned off, and a voltage at the gate of the driver transistor T2 remains almost the same. Hence, the current through the OLED remains unchanged after the turn-off of the transistor T1. The current of the OLED changes only the next time around when a different voltage is written into the pixel.
- the continuous back electrode can give rise to parasitic capacitance causing the leakage current of the transistor T1, whose effects can become significant enough to affect the operation of the driver transistor T2 when the continuous back electrode runs over the switching and other thin film transistors. That is, the presence of the continuous back electrode can induce a parasitic channel in thin-film transistors giving rise to high leakage current.
- the leakage current is the current that flows between the source and drain of the thin-film transistor T1 when the gate of the thin-film transistor T1 is in its OFF state.
- the leakage current could drain away the charge on the gate of the driver thin-film transistor T2 by discharging the capacitance that keeps it continuously in its ON state. Accordingly, it adds to the total power consumption of the display.
- EP A 0 940 796 describes an active matrix display having a bank layer formed along data lines and scanning lines.
- EP A 1 028 471 describes an electroluminescence (EL) display device having an EL element where the cathode of the EL element is disposed in a region other than the drive circuit region.
- JP 09 090405 describes a TFT having an upper gates and a lower gate.
- JP 2000 172199 describes an electroluminescence display having a TFT where a shading material is formed on the active layer of the TFT.
- JP 2000352941 describes a display device having shielding conductor film which is arranged on upper surface of channel to cut off influence of electric field from drain to thin film transistor and stabilize supplied current.
- the architecture enables high density drive circuit integration in amorphous silicon or other technologies, yet preserving the high aperture ratio.
- An OLED display comprises a substrate, and a plurality of pixels formed on the substrate and each having a unit for reducing parasitic capacitances causing leakage currents therein.
- the parasitic capacitance reducing unit is formed with at least one shield electrode of electric conductor.
- the pixels each include an OLED layer for emitting light; and a drive circuit for electrically driving the OLED layer, the at least one shield electrode being disposed between the OLED layer and the drive circuit.
- the OLED layer includes an anode layer, an electroluminescent layer, and a cathode layer, and the drive circuit has at least one thin-film transistor, the at least one shield electrode being disposed to correspond to the at least one thin-film transistor between the cathode layer and the at least one thin-film transistor.
- the at least one shield electrode covers an entire region between a source and a drain of the at least one thin-film transistor.
- the at least one shield electrode is disposed closer to the cathode layer.
- the OLED layer and the drive circuit are vertically stacked over the substrate, the vertically stacked OLED layer and the drive circuit can form a top emission, and the drive circuit is formed in inverted staggered thin-film transistor structure.
- the at least one shield electrode can be formed of Aluminium, Molybdenum, or a standard metallization layer in LCD process in a rectangular shape.
- the parasitic capacitance reducing unit can be electrically grounded or tied to a gate of the at least one thin-film transistor.
- the OLED display according to the present invention minimizes parasitic capacitance in the drive circuit and leakage currents in the thin-film transistors by holding the voltage at the gate of the driver thin-film transistor.
- the OLED display according to the present invention allows the OLED layer to be vertically stacked on the backplane electronics, along with a transparent top electrode for the top or surface emission.
- FIG. 3 is a cross-sectioned view for showing a pixel of an AMOLED display with shield electrodes formed over a drive circuit according to an embodiment of the present invention.
- the AMOLED display consists of a matrix array of pixels, but FIG. 3 shows only one pixel for the sake of simplicity in description.
- a pixel 30 includes an OLED layer 31, intermediate or shield electrodes SE, a drive circuit 34, and a substrate 32.
- the OLED 31 has an anode electrode or an anode layer 31A, an EL layer 31B, and a cathode layer 31C.
- FIG. 3 shows the top or surface emission pixel.
- the cathode electrode 31C forms a continuous back electrode.
- the drive circuit 34 consists of two thin-film transistors T1 and T2.
- the drive circuit 34 may be constructed with more than two thin-film transistors, and the pixel 30 is structured with the OLED 31 vertically stacked over drive circuit 34 formed on the substrate 32.
- the drive circuit 34 is formed with inverted staggered thin-film transistor structures.
- the a-Si:H and a-SiN:H denotes materials employed for the pixel 30.
- FIG. 3 also shows the pixel 30 has a dielectric layer between the cathode layer 31C and the drive circuit 34.
- the TFT transistor T1 has a source S1, a drain D1, and a gate G1, and the TFT transistor T2 consists of a source S2, a drain D2, and a gate G2.
- the source S2 of the thin-film transistor T2 is electrically connected to the cathode layer 31C.
- the substrate 32 may be made of glass, plastic, or semiconductor wafer which is known to one skilled in the art.
- the shield electrodes SE are disposed between the OLED 31 and the drive circuit 34.
- the shield electrodes SE are preferably located closer to the continuous back electrode 31C.
- Shield electrodes SE may be formed of Aluminium or Molybdenum, and a standard metallization layer in the LCD process may be formed for the shield electrodes SE.
- the shield electrodes SE are formed, for example, in a rectangular shape, and should cover the entire region between the source and drain of each of the thin-film transistors T1 and T2.
- the shield electrodes SE are electrically either grounded or tied to the gates of the thin-film transistors T1 and T2, respectively.
- FIG. 4 is a view for showing the pixel of FIG. 3 with parasitic capacitances Cp1 and Cp2 induced during operation thereof.
- FIG. 5 is a view for showing a first equivalent circuit of FIG. 4 , in which the shield electrodes SE are electrically tied to the gates of the driver TFT transistors T1 and T2, respectively.
- FIG. 6 is a view for showing a second equivalent circuit of FIG. 4 , in which the shield electrodes SE are electrically grounded.
- FIGs. 4 , 5, and 6 show that, during the operations of the pixel 30, the parasitic capacitances Cp1 and Cp2 are induced between the continuous back electrode 31C and the shield electrodes SE.
- the operations of the pixel having the shield electrodes SE as shown in FIGs. 4 , 5, and 6 are still the same as those of FIG. 1D , even though the shield electrodes SE are electrically connected to either ground or the gates of the thin-film transistors respectively. That is, when a voltage Vaddress from the gate multiplexer 16 activates one of the address lines, a thin-film transistor T1 is turned on so that a voltage Vdata from the driver 18 starts charging a capacitor Cs through one of the data lines. At this time, the voltage Vdata also causes a gate capacitance of a driver thin-film transistor T2.
- the capacitor Cs charges up to turn the driver transistor T2 on, which then starts conducting to drive the OLED 22 with an appropriate level of current.
- the address line is turned off, the transistor T1 is turned off, and a voltage at the gate of the driver transistor T2 remains almost the same.
- the current through the OLED remains unchanged after the turn-off of the transistor T1.
- the current of the OLED changes only the next time around when a different voltage is written into the pixel. At this time, the continuous back electrode can give rise to parasitic capacitance causing the leakage current of the transistor T1.
- the shield electrodes SE are introduced.
- the shield electrodes SE shield electric potentials from propagating through to the thin-film transistors T1 and T2, hence preventing electric charges from being induced in the undesired regions of the pixel 30, and the parasitic capacitances Cp1 and Cp2 caused by the shield electrodes SE serve to stabilize the OLED operations by holding the voltage at the cathode steady.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Claims (8)
- Anzeigevorrichtung mit organischen Leuchtdioden, "OLED", die umfasst:ein Substrat (32); undeine Vielzahl auf dem Substrat (32) ausgebildeter Pixel (30), wobei jedes Pixel der Vielzahl von Pixeln (30) umfasst:eine OLED (31), die aufweist:eine Anodenschicht (31A),eine Kathodenschicht (31 C), undeine Elektrolumineszenzschicht (31 B), die zwischen der Anodenschicht (31A) und der Kathodenschicht (31 C) angeordnet ist,eine Ansteuerschaltung (34), die einen Ansteuer-Dünnfilmtransistor (T2) zum Ansteuern der OLED (31) und einen Schalt-Dünnfilmtransistor (T1) zum selektiven Koppeln des Ansteuer-Dünnfilmtransistors (T2) mit einer Datenleitung (Vdata) enthält,wobei die Ansteuerschaltung (34) in einer invertierten gestaffelten ("inverted staggered") Dünnfilmstruktur ausgebildet ist und vertikal auf das Substrat (32) geschichtet ist und die OLED (31) vertikal auf die Ansteuerschaltung (34) geschichtet ist;dadurch gekennzeichnet, dassjedes Pixel der Vielzahl von Pixeln (30) des Weiteren umfasst:eine erste Schirmelektrode (SE), die zwischen der Kathodenschicht (31 C) und dem Schalt-Dünnfilmtransistor (T1) angeordnet ist, sowie eine zweite Schirmelektrode (SE), die zwischen der Kathodenschicht (31 C) und dem Ansteuer-Dünnfilmtransistor (T2) angeordnet ist, wobei die erste und die zweite Schirmelektrode (SE) aus einem elektrischen Leiter bestehen und so angeordnet sind, dass sie einen gesamten Bereich zwischen einer Source (S1, S2) und einem Drain (D1, D2) des ersten bzw. des zweiten Dünnfilmtransistors (T1, T2) abdecken und so zwischen der Kathodenschicht (31 C) und den Dünnfilmtransistoren (T1, T2) induzierte parasitäre Kapazitäten sowie einen Leckstrom des Schalt-Transistors (T1) reduzieren, wenn sich ein Gate des Schalt-Transistors (T1) in einem gesperrten Zustand befindet.
- OLED-Anzeigevorrichtung nach Anspruch 1, wobei die erste und die zweite Schirmelektrode (SE) elektrisch mit Erde verbunden sind.
- OLED-Anzeigevorrichtung nach Anspruch 1 oder 2, wobei die erste und die zweite Schirmelektrode (SE) elektrisch an die Gates des Schalt-Dünnfilmtransistors (T1) bzw. des Ansteuer-Dünnfilmtransistors (T2) gebunden sind.
- OLED-Anzeigevorrichtung nach einem der Ansprüche 1 bis 3, wobei die Pixel (30) jeweils für eine Emission nach oben ("top emission") ausgebildet sind, bei der Licht von dem Substrat (32) weg gerichtet wird.
- OLED-Anzeigevorrichtung nach einem der Ansprüche 1 bis 4, wobei die erste und die zweite Schirmelektrode (SE) aus einer Metallisierungsschicht ausgebildet sind.
- OLED-Anzeigevorrichtung nach einem der Ansprüche 1 bis 4, wobei die erste und die zweite Schirmelektrode (SE) in einer rechteckigen Form ausgebildet sind.
- OLED-Anzeigevorrichtung nach einem der Ansprüche 1 bis 4, wobei die erste und die zweite Schirmelektrode (SE) aus Aluminium oder Molybdän ausgebildet sind.
- OLED-Anzeigevorrichtung nach einem der Ansprüche 1 bis 7, wobei die Ansteuerschaltung (34) in amorphem Silizium ausgebildet ist.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26889901P | 2001-02-16 | 2001-02-16 | |
US268899P | 2001-02-16 | ||
PCT/CA2002/000180 WO2002067328A2 (en) | 2001-02-16 | 2002-02-18 | Organic light emitting diode display having shield electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1362374A2 EP1362374A2 (de) | 2003-11-19 |
EP1362374B1 true EP1362374B1 (de) | 2014-05-21 |
Family
ID=23024991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02711722.5A Expired - Lifetime EP1362374B1 (de) | 2001-02-16 | 2002-02-18 | Organische leuchtdiodenanzeigevorrichtung mit abschirmelektroden |
Country Status (5)
Country | Link |
---|---|
US (1) | US7248236B2 (de) |
EP (1) | EP1362374B1 (de) |
JP (1) | JP4392165B2 (de) |
CA (1) | CA2438581C (de) |
WO (1) | WO2002067328A2 (de) |
Families Citing this family (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
EP1488454B1 (de) * | 2001-02-16 | 2013-01-16 | Ignis Innovation Inc. | Pixeltreiberschaltung für eine organische leuchtdiode |
CA2419704A1 (en) * | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
CA2443206A1 (en) * | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
US20060139342A1 (en) * | 2004-12-29 | 2006-06-29 | Gang Yu | Electronic devices and processes for forming electronic devices |
KR100710170B1 (ko) | 2003-12-30 | 2007-04-20 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
KR100665941B1 (ko) * | 2004-09-17 | 2007-01-09 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
CA2490858A1 (en) | 2004-12-07 | 2006-06-07 | Ignis Innovation Inc. | Driving method for compensated voltage-programming of amoled displays |
US9799246B2 (en) | 2011-05-20 | 2017-10-24 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US10012678B2 (en) | 2004-12-15 | 2018-07-03 | Ignis Innovation Inc. | Method and system for programming, calibrating and/or compensating, and driving an LED display |
US9275579B2 (en) | 2004-12-15 | 2016-03-01 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
JP5128287B2 (ja) | 2004-12-15 | 2013-01-23 | イグニス・イノベイション・インコーポレーテッド | 表示アレイのためのリアルタイム校正を行う方法及びシステム |
US10013907B2 (en) | 2004-12-15 | 2018-07-03 | Ignis Innovation Inc. | Method and system for programming, calibrating and/or compensating, and driving an LED display |
US20140111567A1 (en) | 2005-04-12 | 2014-04-24 | Ignis Innovation Inc. | System and method for compensation of non-uniformities in light emitting device displays |
US9171500B2 (en) | 2011-05-20 | 2015-10-27 | Ignis Innovation Inc. | System and methods for extraction of parasitic parameters in AMOLED displays |
US8576217B2 (en) | 2011-05-20 | 2013-11-05 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US9280933B2 (en) | 2004-12-15 | 2016-03-08 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US7612368B2 (en) * | 2004-12-29 | 2009-11-03 | E.I. Du Pont De Nemours And Company | Organic bottom emission electronic device |
US20060138403A1 (en) * | 2004-12-29 | 2006-06-29 | Gang Yu | Organic electronic devices including pixels |
WO2006078898A2 (en) * | 2005-01-18 | 2006-07-27 | Nuelight Corporation | Top emission flat panel display with sensor feedback stabilization |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
CA2496642A1 (en) | 2005-02-10 | 2006-08-10 | Ignis Innovation Inc. | Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming |
US7652291B2 (en) * | 2005-05-28 | 2010-01-26 | Samsung Mobile Display Co., Ltd. | Flat panel display |
KR20080032072A (ko) | 2005-06-08 | 2008-04-14 | 이그니스 이노베이션 인크. | 발광 디바이스 디스플레이 구동 방법 및 시스템 |
CA2518276A1 (en) | 2005-09-13 | 2007-03-13 | Ignis Innovation Inc. | Compensation technique for luminance degradation in electro-luminance devices |
KR100703157B1 (ko) * | 2005-09-15 | 2007-04-06 | 삼성전자주식회사 | 표시 장치 |
JP4640085B2 (ja) * | 2005-09-30 | 2011-03-02 | カシオ計算機株式会社 | 表示パネル |
EP1971975B1 (de) | 2006-01-09 | 2015-10-21 | Ignis Innovation Inc. | Verfahren und system zur ansteuerung einer aktivmatrixanzeigeschaltung |
US9489891B2 (en) | 2006-01-09 | 2016-11-08 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
US9269322B2 (en) | 2006-01-09 | 2016-02-23 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
KR20090006198A (ko) | 2006-04-19 | 2009-01-14 | 이그니스 이노베이션 인크. | 능동형 디스플레이를 위한 안정적 구동 방식 |
CA2556961A1 (en) | 2006-08-15 | 2008-02-15 | Ignis Innovation Inc. | Oled compensation technique based on oled capacitance |
US8525402B2 (en) * | 2006-09-11 | 2013-09-03 | 3M Innovative Properties Company | Illumination devices and methods for making the same |
JP2008233399A (ja) * | 2007-03-19 | 2008-10-02 | Sony Corp | 画素回路および表示装置、並びに表示装置の製造方法 |
JP4479755B2 (ja) * | 2007-07-03 | 2010-06-09 | ソニー株式会社 | 有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンス表示装置 |
CA2610148A1 (en) * | 2007-10-29 | 2009-04-29 | Ignis Innovation Inc. | High aperture ratio pixel layout for amoled display |
JP2009175198A (ja) | 2008-01-21 | 2009-08-06 | Sony Corp | El表示パネル及び電子機器 |
EP2277163B1 (de) | 2008-04-18 | 2018-11-21 | Ignis Innovation Inc. | System und ansteuerverfahren für ein leuchtbauelement-display |
CA2637343A1 (en) | 2008-07-29 | 2010-01-29 | Ignis Innovation Inc. | Improving the display source driver |
US9370075B2 (en) | 2008-12-09 | 2016-06-14 | Ignis Innovation Inc. | System and method for fast compensation programming of pixels in a display |
US10319307B2 (en) | 2009-06-16 | 2019-06-11 | Ignis Innovation Inc. | Display system with compensation techniques and/or shared level resources |
CA2669367A1 (en) | 2009-06-16 | 2010-12-16 | Ignis Innovation Inc | Compensation technique for color shift in displays |
US9384698B2 (en) | 2009-11-30 | 2016-07-05 | Ignis Innovation Inc. | System and methods for aging compensation in AMOLED displays |
US9311859B2 (en) | 2009-11-30 | 2016-04-12 | Ignis Innovation Inc. | Resetting cycle for aging compensation in AMOLED displays |
CA2688870A1 (en) | 2009-11-30 | 2011-05-30 | Ignis Innovation Inc. | Methode and techniques for improving display uniformity |
US8497828B2 (en) | 2009-11-12 | 2013-07-30 | Ignis Innovation Inc. | Sharing switch TFTS in pixel circuits |
US10996258B2 (en) | 2009-11-30 | 2021-05-04 | Ignis Innovation Inc. | Defect detection and correction of pixel circuits for AMOLED displays |
US8803417B2 (en) | 2009-12-01 | 2014-08-12 | Ignis Innovation Inc. | High resolution pixel architecture |
CA2687631A1 (en) | 2009-12-06 | 2011-06-06 | Ignis Innovation Inc | Low power driving scheme for display applications |
KR20240118180A (ko) * | 2009-12-18 | 2024-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
JP5007844B2 (ja) * | 2010-01-29 | 2012-08-22 | ソニー株式会社 | El表示パネル及び電子機器 |
CA2692097A1 (en) | 2010-02-04 | 2011-08-04 | Ignis Innovation Inc. | Extracting correlation curves for light emitting device |
US10163401B2 (en) | 2010-02-04 | 2018-12-25 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US10176736B2 (en) | 2010-02-04 | 2019-01-08 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US9881532B2 (en) | 2010-02-04 | 2018-01-30 | Ignis Innovation Inc. | System and method for extracting correlation curves for an organic light emitting device |
US10089921B2 (en) | 2010-02-04 | 2018-10-02 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US20140313111A1 (en) | 2010-02-04 | 2014-10-23 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
CA2696778A1 (en) | 2010-03-17 | 2011-09-17 | Ignis Innovation Inc. | Lifetime, uniformity, parameter extraction methods |
JP5459018B2 (ja) * | 2010-03-30 | 2014-04-02 | ソニー株式会社 | 表示装置及び電子機器 |
US8907991B2 (en) | 2010-12-02 | 2014-12-09 | Ignis Innovation Inc. | System and methods for thermal compensation in AMOLED displays |
KR101839533B1 (ko) | 2010-12-28 | 2018-03-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이의 구동 방법 및 그 제조 방법 |
US9351368B2 (en) | 2013-03-08 | 2016-05-24 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9886899B2 (en) | 2011-05-17 | 2018-02-06 | Ignis Innovation Inc. | Pixel Circuits for AMOLED displays |
US20140368491A1 (en) | 2013-03-08 | 2014-12-18 | Ignis Innovation Inc. | Pixel circuits for amoled displays |
US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
CN105869575B (zh) | 2011-05-17 | 2018-09-21 | 伊格尼斯创新公司 | 操作显示器的方法 |
US9530349B2 (en) | 2011-05-20 | 2016-12-27 | Ignis Innovations Inc. | Charged-based compensation and parameter extraction in AMOLED displays |
US9466240B2 (en) | 2011-05-26 | 2016-10-11 | Ignis Innovation Inc. | Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed |
US9773439B2 (en) | 2011-05-27 | 2017-09-26 | Ignis Innovation Inc. | Systems and methods for aging compensation in AMOLED displays |
CN103597534B (zh) | 2011-05-28 | 2017-02-15 | 伊格尼斯创新公司 | 用于快速补偿显示器中的像素的编程的系统和方法 |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US9324268B2 (en) | 2013-03-15 | 2016-04-26 | Ignis Innovation Inc. | Amoled displays with multiple readout circuits |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
US8937632B2 (en) | 2012-02-03 | 2015-01-20 | Ignis Innovation Inc. | Driving system for active-matrix displays |
US9747834B2 (en) | 2012-05-11 | 2017-08-29 | Ignis Innovation Inc. | Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore |
US8922544B2 (en) | 2012-05-23 | 2014-12-30 | Ignis Innovation Inc. | Display systems with compensation for line propagation delay |
US9786223B2 (en) | 2012-12-11 | 2017-10-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9336717B2 (en) | 2012-12-11 | 2016-05-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
DE112014000422T5 (de) | 2013-01-14 | 2015-10-29 | Ignis Innovation Inc. | Ansteuerschema für Emissionsanzeigen, das eine Kompensation für Ansteuertransistorschwankungen bereitstellt |
US9830857B2 (en) | 2013-01-14 | 2017-11-28 | Ignis Innovation Inc. | Cleaning common unwanted signals from pixel measurements in emissive displays |
CA2894717A1 (en) | 2015-06-19 | 2016-12-19 | Ignis Innovation Inc. | Optoelectronic device characterization in array with shared sense line |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
EP2779147B1 (de) | 2013-03-14 | 2016-03-02 | Ignis Innovation Inc. | Neuinterpolation mit Kantendetektion zur Extraktion eines Alterungsmusters für AMOLED-Anzeigen |
WO2014140992A1 (en) | 2013-03-15 | 2014-09-18 | Ignis Innovation Inc. | Dynamic adjustment of touch resolutions on an amoled display |
WO2014174427A1 (en) | 2013-04-22 | 2014-10-30 | Ignis Innovation Inc. | Inspection system for oled display panels |
WO2015022626A1 (en) | 2013-08-12 | 2015-02-19 | Ignis Innovation Inc. | Compensation accuracy |
US9761170B2 (en) | 2013-12-06 | 2017-09-12 | Ignis Innovation Inc. | Correction for localized phenomena in an image array |
US9741282B2 (en) | 2013-12-06 | 2017-08-22 | Ignis Innovation Inc. | OLED display system and method |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
DE102015206281A1 (de) | 2014-04-08 | 2015-10-08 | Ignis Innovation Inc. | Anzeigesystem mit gemeinsam genutzten Niveauressourcen für tragbare Vorrichtungen |
KR102241704B1 (ko) * | 2014-08-07 | 2021-04-20 | 삼성디스플레이 주식회사 | 화소 회로 및 이를 포함하는 유기 발광 표시 장치 |
CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
CA2873476A1 (en) | 2014-12-08 | 2016-06-08 | Ignis Innovation Inc. | Smart-pixel display architecture |
CA2879462A1 (en) | 2015-01-23 | 2016-07-23 | Ignis Innovation Inc. | Compensation for color variation in emissive devices |
CA2886862A1 (en) | 2015-04-01 | 2016-10-01 | Ignis Innovation Inc. | Adjusting display brightness for avoiding overheating and/or accelerated aging |
CA2889870A1 (en) | 2015-05-04 | 2016-11-04 | Ignis Innovation Inc. | Optical feedback system |
CA2892714A1 (en) | 2015-05-27 | 2016-11-27 | Ignis Innovation Inc | Memory bandwidth reduction in compensation system |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2900170A1 (en) | 2015-08-07 | 2017-02-07 | Gholamreza Chaji | Calibration of pixel based on improved reference values |
CA2908285A1 (en) | 2015-10-14 | 2017-04-14 | Ignis Innovation Inc. | Driver with multiple color pixel structure |
CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
CN105552106B (zh) * | 2016-01-29 | 2018-07-06 | 上海天马微电子有限公司 | Oled面板以及触控检测方法 |
US10256277B2 (en) * | 2016-04-11 | 2019-04-09 | Abl Ip Holding Llc | Luminaire utilizing a transparent organic light emitting device display |
DE102017222059A1 (de) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixelschaltungen zur Minderung von Hysterese |
US10244230B2 (en) * | 2017-03-01 | 2019-03-26 | Avalon Holographics Inc. | Directional pixel for multiple view display |
WO2018205028A1 (en) * | 2017-05-09 | 2018-11-15 | Ka Imaging Inc. | Apparatus for radiation detection in a digital imaging system |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
KR102458911B1 (ko) * | 2017-12-18 | 2022-10-25 | 엘지디스플레이 주식회사 | 양면 발광형 투명 유기발광 다이오드 표시장치 |
US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
CN208622728U (zh) * | 2018-09-07 | 2019-03-19 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
CN111092099A (zh) * | 2018-10-23 | 2020-05-01 | 宸鸿光电科技股份有限公司 | 有机发光二极管显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000352941A (ja) * | 1999-06-14 | 2000-12-19 | Sony Corp | 表示装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0990405A (ja) * | 1995-09-21 | 1997-04-04 | Sharp Corp | 薄膜トランジスタ |
JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
CN100517424C (zh) * | 1997-08-21 | 2009-07-22 | 精工爱普生株式会社 | 显示装置 |
JP3702096B2 (ja) * | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
JP2000172199A (ja) * | 1998-12-01 | 2000-06-23 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2000231346A (ja) * | 1999-02-09 | 2000-08-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
-
2002
- 2002-02-18 CA CA002438581A patent/CA2438581C/en not_active Expired - Fee Related
- 2002-02-18 WO PCT/CA2002/000180 patent/WO2002067328A2/en active Application Filing
- 2002-02-18 EP EP02711722.5A patent/EP1362374B1/de not_active Expired - Lifetime
- 2002-02-18 JP JP2002566553A patent/JP4392165B2/ja not_active Expired - Lifetime
- 2002-02-18 US US10/468,320 patent/US7248236B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000352941A (ja) * | 1999-06-14 | 2000-12-19 | Sony Corp | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
US7248236B2 (en) | 2007-07-24 |
WO2002067328A2 (en) | 2002-08-29 |
CA2438581C (en) | 2005-11-29 |
JP4392165B2 (ja) | 2009-12-24 |
CA2438581A1 (en) | 2002-08-29 |
WO2002067328A3 (en) | 2002-11-07 |
EP1362374A2 (de) | 2003-11-19 |
JP2004531752A (ja) | 2004-10-14 |
US20040130516A1 (en) | 2004-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1362374B1 (de) | Organische leuchtdiodenanzeigevorrichtung mit abschirmelektroden | |
JP7171738B2 (ja) | 金属酸化物スイッチを含み小型蓄電コンデンサを備えた薄膜トランジスタ | |
US8063853B2 (en) | Organic light-emitting diode display | |
JP4337171B2 (ja) | 表示装置 | |
KR100834346B1 (ko) | 능동행렬 유기전기발광소자 | |
US7176070B2 (en) | Active matrix organic light emitting display and method of forming the same | |
KR100637458B1 (ko) | 유기전계 발광 표시 패널 | |
KR100812861B1 (ko) | 디스플레이 패널 | |
KR101499233B1 (ko) | 유기 발광 표시 장치 | |
KR101209057B1 (ko) | 표시 장치 및 그의 제조 방법 | |
KR20170061778A (ko) | 유기발광 다이오드 표시장치용 박막 트랜지스터 기판 | |
KR100758062B1 (ko) | 디스플레이패널 | |
KR100560026B1 (ko) | 표시 장치 | |
US7129524B2 (en) | Organic electroluminescent device and method for fabricating the same | |
KR100482328B1 (ko) | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 | |
KR100627284B1 (ko) | 유기전계 발광 표시 패널 | |
KR100899158B1 (ko) | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 | |
US8284125B2 (en) | Active matrix organic electro-luminescence display panel and fabrication method thereof | |
JP2006195255A (ja) | ディスプレイパネル | |
US20230284487A1 (en) | Organic Light Emitting Diode Display Device and Manufacturing Method Thereof | |
KR100627358B1 (ko) | 유기전계 발광 표시 패널 | |
KR100669316B1 (ko) | 유기 전계 발광 표시 장치 | |
KR100637457B1 (ko) | 유기전계 발광 표시 패널 | |
KR101267077B1 (ko) | 유기 전계 발광 표시소자 및 그 제조방법 | |
JP4893753B2 (ja) | ディスプレイパネル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20030915 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: SERVATI, PEYMAN Inventor name: KARIM, KARIM, S. Inventor name: NATHAN, AROKIA |
|
17Q | First examination report despatched |
Effective date: 20060721 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: IGNIS INNOVATION INC. |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: IGNIS INNOVATION INC. |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 60246299 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0027000000 Ipc: H01L0027320000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 27/12 20060101ALI20131104BHEP Ipc: H01L 27/32 20060101AFI20131104BHEP |
|
INTG | Intention to grant announced |
Effective date: 20131126 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 669981 Country of ref document: AT Kind code of ref document: T Effective date: 20140615 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 60246299 Country of ref document: DE Effective date: 20140703 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: T3 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 669981 Country of ref document: AT Kind code of ref document: T Effective date: 20140521 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140822 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140922 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 60246299 Country of ref document: DE |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed |
Effective date: 20150224 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 60246299 Country of ref document: DE Effective date: 20150224 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150218 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150228 Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150228 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150218 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 15 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 16 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20170223 Year of fee payment: 16 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 20170226 Year of fee payment: 16 Ref country code: GB Payment date: 20170227 Year of fee payment: 16 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140521 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MM Effective date: 20180301 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20180218 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20181031 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180301 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180228 Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180218 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20210225 Year of fee payment: 20 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R071 Ref document number: 60246299 Country of ref document: DE |