EP1145316A3 - Module a semi-conducteur de puissance - Google Patents

Module a semi-conducteur de puissance

Info

Publication number
EP1145316A3
EP1145316A3 EP00982969A EP00982969A EP1145316A3 EP 1145316 A3 EP1145316 A3 EP 1145316A3 EP 00982969 A EP00982969 A EP 00982969A EP 00982969 A EP00982969 A EP 00982969A EP 1145316 A3 EP1145316 A3 EP 1145316A3
Authority
EP
European Patent Office
Prior art keywords
power semiconductor
semiconductor module
module
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00982969A
Other languages
German (de)
English (en)
Other versions
EP1145316A2 (fr
Inventor
Kuno Wolf
Gerhard Koelle
Juergen Zaremba
Wolfgang Jacob
Alexander Wallrauch
Christoph Ruf
Ralf Schmid
Peter Urbach
Bernd Bireckoven
Hans-Reiner Krauss
Dirk Scholz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1145316A2 publication Critical patent/EP1145316A2/fr
Publication of EP1145316A3 publication Critical patent/EP1145316A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
EP00982969A 1999-10-09 2000-10-07 Module a semi-conducteur de puissance Withdrawn EP1145316A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19950026 1999-10-09
DE19950026A DE19950026B4 (de) 1999-10-09 1999-10-09 Leistungshalbleitermodul
PCT/DE2000/003529 WO2001027997A2 (fr) 1999-10-09 2000-10-07 Module a semi-conducteur de puissance

Publications (2)

Publication Number Publication Date
EP1145316A2 EP1145316A2 (fr) 2001-10-17
EP1145316A3 true EP1145316A3 (fr) 2002-02-13

Family

ID=7925962

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00982969A Withdrawn EP1145316A3 (fr) 1999-10-09 2000-10-07 Module a semi-conducteur de puissance

Country Status (7)

Country Link
US (1) US6697257B1 (fr)
EP (1) EP1145316A3 (fr)
JP (1) JP4886137B2 (fr)
KR (1) KR100665933B1 (fr)
DE (1) DE19950026B4 (fr)
HU (1) HU225864B1 (fr)
WO (1) WO2001027997A2 (fr)

Families Citing this family (32)

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JP3673776B2 (ja) * 2002-07-03 2005-07-20 株式会社日立製作所 半導体モジュール及び電力変換装置
JP3780230B2 (ja) 2002-07-03 2006-05-31 株式会社日立製作所 半導体モジュール及び電力変換装置
JP3847676B2 (ja) * 2002-07-15 2006-11-22 三菱電機株式会社 パワー半導体装置
DE10258565B3 (de) * 2002-12-14 2004-08-12 Semikron Elektronik Gmbh Schaltungsanordnung für Halbleiterbauelemente und Verfahren zur Herstellung
DE10303103B4 (de) * 2003-01-28 2009-07-09 Ixys Semiconductor Gmbh Halbleiterbauteil, insbesondere Leistungshalbleiterbauteil
DE10303463B4 (de) * 2003-01-29 2006-06-14 Infineon Technologies Ag Halbleiterbauelement mit wenigstens zwei in einem Gehäuse integrierten und durch einen gemeinsamen Kontaktbügel kontaktierten Chips
DE10352079A1 (de) * 2003-11-08 2005-06-02 Robert Bosch Gmbh Elektromotor, sowie Verfahren zur Herstellung eines solchen
US7068515B2 (en) * 2004-11-24 2006-06-27 Hewlett-Packard Development Company, L.P. Multi-chip module with stacked redundant power
US7623349B2 (en) * 2005-03-07 2009-11-24 Ati Technologies Ulc Thermal management apparatus and method for a circuit substrate
DE102005039478B4 (de) 2005-08-18 2007-05-24 Infineon Technologies Ag Leistungshalbleiterbauteil mit Halbleiterchipstapel und Verfahren zur Herstellung desselben
JP4979909B2 (ja) * 2005-08-19 2012-07-18 株式会社日立製作所 電力変換装置
US7554188B2 (en) * 2006-04-13 2009-06-30 International Rectifier Corporation Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
DE102006018161A1 (de) * 2006-04-19 2007-10-25 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Elektronisches Bauelementmodul
JP4564937B2 (ja) * 2006-04-27 2010-10-20 日立オートモティブシステムズ株式会社 電気回路装置及び電気回路モジュール並びに電力変換装置
US8089150B2 (en) * 2006-11-14 2012-01-03 Rinehart Lawrence E Structurally robust power switching assembly
JP4694514B2 (ja) * 2007-02-08 2011-06-08 トヨタ自動車株式会社 半導体素子の冷却構造
DE102007025957A1 (de) * 2007-06-04 2008-12-11 Robert Bosch Gmbh Verfahren und Vorrichtung zum Festlegen eines eine elektrische Schaltung oder dergleichen aufweisenden Flächensubstrats in einer Einbauposition
US7808788B2 (en) * 2007-06-29 2010-10-05 Delphi Technologies, Inc. Multi-layer electrically isolated thermal conduction structure for a circuit board assembly
US7911792B2 (en) * 2008-03-11 2011-03-22 Ford Global Technologies Llc Direct dipping cooled power module and packaging
JP5434914B2 (ja) * 2008-06-12 2014-03-05 株式会社安川電機 パワーモジュールおよびその制御方法
DE102009045063C5 (de) * 2009-09-28 2017-06-01 Infineon Technologies Ag Leistungshalbleitermodul mit angespritztem Kühlkörper, Leistungshalbleitermodulsystem und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE102010020900C5 (de) * 2010-05-18 2013-06-06 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung von Leistungshalbleitersubstraten
US8699225B2 (en) * 2012-03-28 2014-04-15 Delphi Technologies, Inc. Liquid cooled electronics assembly suitable to use electrically conductive coolant
EP2911193A4 (fr) * 2012-10-16 2016-06-15 Fuji Electric Co Ltd Structure de refroidissement et corps thermogène
KR101482317B1 (ko) * 2012-10-30 2015-01-13 삼성전기주식회사 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지
ITPI20130044A1 (it) * 2013-05-24 2014-11-25 Marco Ariani Struttura perfezionata di supporto per articoli di vario genere
JP6500563B2 (ja) * 2015-03-31 2019-04-17 アイシン・エィ・ダブリュ株式会社 スイッチング素子ユニット
EP3249685B1 (fr) * 2016-05-24 2019-11-27 Mitsubishi Electric R&D Centre Europe B.V. Système comprenant au moins un module de puissance comprenant au moins une puce de puissance refroidie par barre-bus à liquide
US10510636B2 (en) * 2017-07-14 2019-12-17 Shindengen Electric Manufacturing Co., Ltd. Electronic module
JP7172847B2 (ja) * 2019-05-15 2022-11-16 株式会社デンソー 半導体装置
TWI701991B (zh) * 2019-07-08 2020-08-11 欣興電子股份有限公司 電路板結構
IT201900013743A1 (it) * 2019-08-01 2021-02-01 St Microelectronics Srl Dispositivo elettronico di potenza incapsulato, in particolare circuito a ponte comprendente transistori di potenza, e relativo procedimento di assemblaggio

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE468884A (fr) 1945-06-02 1900-01-01
DE1439060B2 (de) 1960-12-29 1970-08-13 Siemens AG, 1000 Berlin u. 8000 München Halbleiter-Gleichrichteranordnung
US3266125A (en) 1962-11-13 1966-08-16 Douglas Aircraft Co Inc Method for making electrical circuit modules
US3388302A (en) 1966-12-30 1968-06-11 Coors Porcelain Co Ceramic housing for semiconductor components
US4218694A (en) 1978-10-23 1980-08-19 Ford Motor Company Rectifying apparatus including six semiconductor diodes sandwiched between ceramic wafers
FR2525392A1 (fr) 1982-04-19 1983-10-21 Inst Elektrodinamiki Akademii Transistor de puissance du type comportant un nombre n de structures fonctionnelles branchees en parallele
DE3322593A1 (de) 1983-06-23 1985-01-10 Klöckner-Moeller Elektrizitäts GmbH, 5300 Bonn Halbleiteranordnung und verfahren zu ihrer herstellung
GB2146174B (en) * 1983-09-06 1987-04-23 Gen Electric Hermetic power chip packages
EP0244767A3 (fr) 1986-05-05 1988-08-03 Silicon Power Corporation Boítier hermétique pour semi-conducteur et procédé de fabrication
JPH0235453A (ja) * 1988-07-25 1990-02-06 Sekisui Chem Co Ltd 感光性樹脂組成物
JPH0514519Y2 (fr) * 1988-08-30 1993-04-19
DE69015878T2 (de) * 1989-04-17 1995-07-13 Ibm Mehrschichtleiterplattenstruktur.
DE3924823A1 (de) 1989-07-27 1991-02-21 Telefunken Electronic Gmbh Halbleiteranordnung
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
JP2705368B2 (ja) * 1991-05-31 1998-01-28 株式会社デンソー 電子装置
JP2854757B2 (ja) * 1992-06-17 1999-02-03 三菱電機株式会社 半導体パワーモジュール
US5229917A (en) * 1992-07-24 1993-07-20 The United States Of America As Represented By The Secretary Of The Air Force VLSI integration into a 3-D WSI dual composite module
JP3022178B2 (ja) * 1994-06-21 2000-03-15 日産自動車株式会社 パワーデバイスチップの実装構造
JP3879150B2 (ja) * 1996-08-12 2007-02-07 株式会社デンソー 半導体装置
JP3773268B2 (ja) * 1996-09-30 2006-05-10 シーメンス アクチエンゲゼルシヤフト サンドイッチ構造のマイクロエレクトロニクス構成部材
SE511425C2 (sv) * 1996-12-19 1999-09-27 Ericsson Telefon Ab L M Packningsanordning för integrerade kretsar
US5986887A (en) * 1998-10-28 1999-11-16 Unisys Corporation Stacked circuit board assembly adapted for heat dissipation
JP2000174180A (ja) * 1998-12-02 2000-06-23 Shibafu Engineering Kk 半導体装置

Also Published As

Publication number Publication date
US6697257B1 (en) 2004-02-24
HUP0200604A3 (en) 2003-02-28
DE19950026A1 (de) 2001-04-12
JP4886137B2 (ja) 2012-02-29
WO2001027997A2 (fr) 2001-04-19
EP1145316A2 (fr) 2001-10-17
KR20010104308A (ko) 2001-11-24
HUP0200604A2 (en) 2002-06-29
JP2003511864A (ja) 2003-03-25
DE19950026B4 (de) 2010-11-11
KR100665933B1 (ko) 2007-01-09
HU225864B1 (en) 2007-11-28
WO2001027997A3 (fr) 2001-12-06

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