EP0872925B1 - Semiconductor laser and optical disk device using the laser - Google Patents

Semiconductor laser and optical disk device using the laser Download PDF

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Publication number
EP0872925B1
EP0872925B1 EP96931223A EP96931223A EP0872925B1 EP 0872925 B1 EP0872925 B1 EP 0872925B1 EP 96931223 A EP96931223 A EP 96931223A EP 96931223 A EP96931223 A EP 96931223A EP 0872925 B1 EP0872925 B1 EP 0872925B1
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Prior art keywords
layer
semiconductor laser
saturable absorption
absorption layer
energy gap
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German (de)
English (en)
French (fr)
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EP0872925A4 (en
EP0872925A1 (en
Inventor
Isao Kidoguchi
Hideto Adachi
Masaya Mannoh
Toshiya Arashiyama Roiaruhaitsu 8-406 FUKUHISA
Akira Takamori
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Definitions

  • the present invention relates to a self-oscillation type semiconductor laser used as a light source for an optical disk system and an optical disk device using such a semiconductor laser.
  • An AlGaInP type semiconductor laser can oscillate in the red region of wavelengths of 630 to 690 nm, emitting light with the shortest wavelength among those obtained from semiconductor lasers practically available at present.
  • This type of semiconductor laser is therefore highly expected to be a next-generation large-capacity light source for optical information recording, replacing the conventional AlGaAs type semiconductor laser.
  • a semiconductor laser when reproducing information from an optical disk, a semiconductor laser generates intensity noise due to return of light reflected from a disk surface and temperature change, inducing a signal read error. A laser with low intensity noise is therefore indispensable for a light source of an optical disk.
  • a low-output AlGaAs type semiconductor laser for a reproduction-only device has a structure where saturable absorbers are intentionally formed on each side of a ridge stripe.
  • saturable absorbers are intentionally formed on each side of a ridge stripe.
  • multiple longitudinal modes can be obtained.
  • disturbances such as return light and temperature change arise when a laser is oscillated in a single longitudinal mode
  • oscillation in an adjacent longitudinal mode is started by a minute change in a gain peak, causing conflict with the oscillation in the original oscillating mode and thus leading to noise.
  • the change in the intensity of each mode is averaged and is not influenced by the disturbances.
  • stable low-noise characteristics can be obtained.
  • a method for obtaining further stable self-oscillation characteristics is disclosed in Japanese Laid-Open Publication No. 63-202083.
  • a self-oscillation type semiconductor laser has been realized by forming a layer which can absorb output light.
  • Japanese Laid-Open Publication No. 6-260716 reports that the characteristics have been improved by substantially equalizing the energy gaps of an active layer and an absorption layer.
  • the energy gaps of a strained quantum well active layer and a strained quantum well saturable absorption layer are substantially equal to each other, so as to obtain good self-oscillation characteristics.
  • a similar configuration is described in Japanese Laid-Open Publication No. 7-22695.
  • the inventors of the present invention have found that good self-oscillation characteristics are not obtained by only substantially equalizing the energy gaps of a saturable absorption layer and an active layer.
  • the present invention is aimed at providing a semiconductor laser having stable self-oscillation characteristics effective for noise reduction by examining the energy gap difference between a saturable absorption layer and an active layer, as well as a method for fabricating such a semiconductor laser and an optical disk device using such a semiconductor laser.
  • the semiconductor laser of this invention includes an active layer having a quantum well layer and a cladding structure sandwiching the active layer, wherein the cladding structure includes a saturable absorption layer and an optical guide layer for increasing a confinement factor of the saturable absorption layer, and the energy gap of the saturable absorption layer is smaller than the energy gap between ground states of the quantum well layer of the active layer by 30 to 200 meV, whereby the above objective is attained.
  • the thickness of the saturable absorption layer is in a range of about 10 to about 100 ⁇ .
  • a plurality of saturable absorption layers may be formed.
  • the energy gap of the saturation absorption layer is smaller than the energy gap between ground states of the quantum well layer of the active layer by 50 to 100 meV.
  • the optical guide layer has a band gap which is larger than a band gap of the saturable absorption layer and smaller than band gaps of the other layers of the cladding structure.
  • the thickness of the optical guide layer is in a range of 300 to 1200 ⁇ .
  • the optical guide layer may be divided into a plurality of portions in the cladding structure.
  • the optical guide layer may be adjacent to the saturable absorption layer in the cladding structure.
  • the saturable absorption layer is doped with impurities of 1 ⁇ 10 18 cm -3 or more.
  • the active layer has a multiple quantum well structure.
  • the semiconductor laser includes an active layer having a quantum well layer and a cladding structure sandwiching the active layer, the cladding structure including a saturable absorption layer and an optical guide layer for increasing a confinement factor of the saturable absorption layer, the energy gap of the saturable absorption layer being smaller than the energy gap between ground states of the quantum well layer of the active layer by 30 to 200 meV, characteristics of the semiconductor laser varying with time after start of laser oscillation but being substantially fixed after a lapse of about one minute.
  • the method includes the stabilizing step for varying the characteristics obtained immediately after the start of laser oscillation to obtain the substantially fixed characteristics, whereby the above objective is attained.
  • the characteristics are current-light output power characteristics.
  • the stabilizing step comprises the step of reducing a threshold current by an aging process.
  • the stabilizing step comprises the step of reducing a threshold current by annealing.
  • the threshold current is reduced from a value obtained immediately after the start of laser oscillation by 5 mA or more by the stabilizing step.
  • the optical disk device includes: a semiconductor laser; a converging optical system for converging a laser beam emitted from the semiconductor laser on a recording medium; and an optical detector for detecting the laser beam reflected from the recording medium, wherein the semiconductor laser includes an active layer having a quantum well layer and a cladding structure sandwiching the active layer, the cladding structure including a saturable absorption layer and an optical guide layer for increasing a confinement factor of the saturable absorption layer, and the energy gap of the saturable absorption layer is smaller than the energy gap between ground states of the quantum well layer of the active layer by 30 to 200 meV, whereby the above objective is attached.
  • the semiconductor laser oscillates in a single mode when information is recorded on the recording medium, and operates in a self-oscillation mode when information recorded on the recording medium is reproduced.
  • the optical detector is disposed near the semiconductor laser.
  • the optical detector includes a plurality of photodiodes formed on a silicon substrate, and the semiconductor laser is disposed on the silicon substrate.
  • the silicon substrate includes a concave portion formed on a principal surface thereof and a micromirror formed on a side wall of the concave portion, the semiconductor laser is disposed in the concave portion, and the angle formed between the micromirror and the principal surface is set so that the laser beam emitted from the semiconductor laser proceeds in a direction substantially vertical to the principal surface of the silicon substrate after being reflected from the micromirror.
  • a metal film is formed on a surface of the micromirror.
  • the active layer and the cladding structure are formed of Al x Ga y In 1-x-y P material (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, where x and y are not zero simultaneously).
  • the semiconductor laser of the present invention includes an active layer including a quantum well layer and a saturable absorption layer, wherein the energy gap of the saturable absorption layer is smaller than the energy gap between ground states of the quantum well layer of the active layer by 30 to 200 meV, whereby the above objective is attained.
  • the semiconductor laser of the present invention includes an active layer including a quantum well layer and a cladding structure sandwiching the active layer, wherein the cladding structure includes a saturable absorption layer, and the energy gap of the saturable absorption layer is smaller than the energy gap between ground states of the quantum well layer of the active layer by 30 to 200 meV, whereby the above objective is attained.
  • the thickness of the saturable absorption layer is in the range of about 10 to about 100 ⁇ .
  • a plurality of saturable absorption layers may be formed.
  • the energy gap of the saturation absorption layer is smaller than the energy gap between ground states of the quantum well layer of the active layer by 50 to 100 meV.
  • the saturable absorption layer is doped with impurities of 1 ⁇ 10 18 cm -3 or more.
  • strain is applied to the quantum well layer and the saturable absorption layer.
  • the active layer has a multiple quantum well structure.
  • Figure 1 is a schematic view illustrating energy gaps.
  • Figure 2 is a sectional view of the first example of the semiconductor laser according to the present invention.
  • Figure 3 is a band gap energy diagram of the first example.
  • Figure 4A is a light output power characteristics diagram indicating P max .
  • Figure 4B is a diagram illustrating changes in the light output power with time when the light output power is more than P max .
  • Figure 4C is a diagram illustrating changes in the light output power with time when the light output power is less than P max .
  • Figure 5 is a T max and P max characteristics diagram for the first example according to the present invention.
  • Figure 6 is a characteristics diagram illustrating the relationship between the energy gap and the operating current.
  • Figure 7 is a characteristics diagram illustrating the relationship between the operating current and the life time.
  • Figure 8 is a light output power characteristics diagram of the first example according to the present invention.
  • Figure 9 is a diagram illustrating the change in the light output power with time of the first example according to the present invention.
  • Figure 10 is a sectional view of the second example of the semiconductor laser according to the present invention.
  • Figure 11 is a band gap energy diagram of the second example.
  • Figure 12A is a light intensity distribution diagram obtained when an optical guide layer is not formed
  • Figure 12B is a light intensity distribution diagram obtained when an optical guide layer is formed.
  • Figure 13 is a characteristics diagram illustrating the confinement factor of the second example.
  • Figure 14 is a band gap energy diagram of another example of the semiconductor laser according to the present invention.
  • Figure 15 is a band gap energy diagram illustrating the positional relationship between a saturable absorption layer and an optical guide layer according to the present invention.
  • Figure 16 is a band gap energy diagram obtained when the saturable absorption layer is formed in the optical guide layer.
  • Figure 17 is a view schematically illustrating an example of the optical disk device according to the present invention.
  • Figure 18 is a perspective view of a laser unit used for the optical disk device according to the present invention.
  • Figure 19 is a view schematically illustrating another example of the optical disk device according to the present invention.
  • Figure 20 is a diagram illustrating the operation of a hologram element used for the optical disk device according to the present invention.
  • Figure 21 is a plan view of optical detectors used for the optical disk device according to the present invention.
  • the inventors of the present invention have examined the relationship between the "energy gap difference ( ⁇ E) between an active layer and a saturable absorption layer” and self-oscillation.
  • the energy gap difference ( ⁇ E) between an active layer and a saturable absorption layer means the "value obtained by subtracting an energy gap (E' gs ) between ground states of the saturable absorption layer from an energy gap (E' ga ) between ground states of a quantum well layer of an active layer before laser oscillation (E' ga - E' gs )", when both the active layer and the saturable absorption layer are of a quantum well structure.
  • the energy gap difference between the active layer and the saturable absorption layer means the "value obtained by subtracting the band gap (E gs ) of the saturable absorption layer from the energy gap (E' ga ) between ground states of the active layer before laser oscillation".
  • the saturable absorption layer may be of the quantum well structure or of the bulk structure.
  • the "energy gap of the saturable absorption layer” as used herein is defined as follows for convenience. That is, it means the “energy gap (E' gs ) between ground states” when the saturable absorption layer is of the quantum well structure, while meaning the “band gap (E gs ) thereof" when the saturable absorption layer is of the bulk structure.
  • the “energy gap difference between the active layer and the saturable absorption layer” can be expressed as the "value obtained by subtracting the energy gap of the saturable absorption layer from the energy gap between ground states of the quantum well layer of the active layer before laser oscillation".
  • the inventors of the present invention have examined and found that stable self-oscillation can be obtained by setting the energy gap difference ( ⁇ E) between the active layer and the saturable absorption layer at 30 meV to 200 meV. This is because, in the above range of the energy gap difference, the saturable absorption layer efficiently absorbs laser light while the light absorption is saturated. No self-oscillation is obtained when the energy gap difference ( ⁇ E) between the active layer and the saturable absorption layer is less than 30 meV. This is probably because, with such small energy gap difference, the saturable absorption layer does not absorb much laser light.
  • the appropriate energy gap difference ( ⁇ E) is in the range of 30 to 200 meV.
  • the energy gap difference ( ⁇ E) is in the range of 50 meV to 100 meV, especially, the saturation condition of the saturable absorption layer becomes optimal, allowing for stable self-oscillation even at a high operating temperature.
  • the energy gap difference ( ⁇ E) exceeds 100 meV, light absorption by the saturable absorption layer gradually increases, slightly increasing the operating current.
  • the energy gap difference is therefore preferably 100 meV or less.
  • this setting of the energy gap difference in the above range is preferable when the semiconductor laser is expected to operate under the circumstance of a comparatively high temperature, such as in applications related to automobiles.
  • the carrier density of the saturated absorption layer can be easily increased by reducing the volume of the saturated absorption layer.
  • Laser light output from the active layer is absorbed by the saturable absorption layer, generating pairs each formed of an electron and a hole.
  • the volume of the saturable absorption layer is small, the light absorption thereof per unit volume increases, easily resulting in increase of the carrier density thereof.
  • the saturable absorption layer with a high carrier density can be easily saturated, exhibiting excellent saturable absorption effect. Accordingly, more strong and stable self-oscillation characteristics can be obtained as the saturable absorption layer becomes thinner. This has been confirmed by experiments of the inventors of the present invention.
  • the thickness of the saturable absorption layer is preferably in the range of about 10 to 100 ⁇ in order to obtain such strong and stable self-oscillation. This can also be obtained with a saturable absorption layer having the bulk structure with a thickness of over 100 ⁇ as long as the energy gap difference is set within the preferable range.
  • the saturable absorption layer may be divided into a plurality of sub-layers.
  • an optical guide layer is formed having a cladding structure in order to overcome the following disadvantage.
  • the saturable absorption layer is made as thin as the quantum well layer in order to reduce the volume of the saturable absorption layer, the confinement factor within the saturable absorption layer is extremely reduced, and consequently, stable self-oscillation is not obtained. If the confinement factor of the saturable absorption layer increases to at least about 1.2% while that of the active layer is maintained at 5.0% or more, for example, by using the optical guide layer, stable self-oscillation can be obtained.
  • the optical guide layer of the present invention is formed to increase the confinement factor of the saturable absorption layer. It is disposed at a position apart from the active layer.
  • the optical guide layer of the present invention is therefore largely different from a conventional optical guide layer disposed adjacent to an active layer to increase the confinement factor of the active layer.
  • the positional relationship between the saturable absorption layer and the optical guide layer is optimally determined in consideration of the volume and light confinement of the saturable absorption layer.
  • FIG. 2 is a sectional view of an example of the semiconductor laser according to the present invention.
  • the semiconductor laser of this example includes an n-type GaAs substrate 101 and a semiconductor multilayer structure formed on the GaAs substrate 101 .
  • the semiconductor multilayer structure includes an n-type GaAs buffer layer 102 , an n-type AlGaInP cladding layer 103 , a multiple quantum well active layer 104 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 105a , a saturable absorption layer 106 made of p-type GaInP, and a second p-type AlGaInP cladding layer 105b .
  • a stripe ridge (width: about 2.0 to 7.0 ⁇ m) extending in a cavity length direction is formed in the upper portion of the second p-type cladding layer 105b .
  • a contact layer 110 is formed on the top surface of the ridge of the second p-type cladding layer 105b .
  • An n-type GaAs current blocking layer 111 is formed on the second p-type cladding layer 105b and the sides of the contact layer 111 .
  • a p-type GaAs cap layer 112 is formed over the contact layer 110 and the current blocking layer 111 .
  • a p-electrode 113 is formed on the top surface of the cap layer 112 , while an n-electrode 114 is formed on the bottom surface of the substrate 101 .
  • the active layer 104 is of a multiple quantum well structure composed of three pairs of well layers and barrier layers.
  • the portions of the semiconductor multilayer structure except for the buffer layer, the active layer, the contact layer, the cap layer, and the current blocking layer are called a "cladding structure" as a whole.
  • the n-type AlGaInP cladding layer 103, the first p-type AlGaInP cladding layer 105a , the saturable absorption layer 106 , and the second p-type AlGaInP cladding layer 105b constitute the cladding structure.
  • the dope level and the film thickness of each semiconductor layer constituting the semiconductor multilayer structure are shown in Table 1 below. Name Ref. No. Dope level (cm -3 ) Thickness Cap layer 112 5 ⁇ 10 18 3 ⁇ m Contact layer 110 1 ⁇ 10 18 500 ⁇ 2nd p-type cladding layer 105b 1 ⁇ 10 18 0.9 ⁇ m Saturable absorption layer 106 2 ⁇ 10 18 50 ⁇ 1st p-type cladding layer 105a 5 ⁇ 10 17 500 ⁇ Active layer 104 undoped 500 ⁇ Barrier layer 50 ⁇ Well layer 50 ⁇ N-type cladding layer 103 5 ⁇ 10 17 1.0 ⁇ m Buffer layer 102 1 ⁇ 10 18 0.3 ⁇ m
  • Figure 3 shows the distribution of an Al mole fraction x of (Al x Ga 1-x ) 0.5 In 0.5 P of the portions of the semiconductor laser of this example covering the vicinity of the active layer through the vicinity of the saturable absorption layer.
  • the Al mole fraction of the n-type cladding layer 103 , the first p-type cladding layer 105a , and the second p-type cladding layer 105b is 0.7. Since the quantum well layers of the active layer 104 and the saturable absorption layer are made of Ga 0.45 In 0.55 P and Ga 0.40 In 0.60 P, respectively, they have large lattice constants compared with the surrounding layers, resulting in receiving compressive strain.
  • the energy gap difference between the quantum well layers of the active layer 104 and the saturable absorption layer plays an important role in obtaining stable self-oscillation.
  • the energy gap difference is 57 meV, allowing for stable self-oscillation.
  • the inventors of the present invention have examined the role of the saturable absorption layer and the energy gap difference, and the results will be described hereinbelow.
  • the self-oscillation also tends to be terminated when the operating temperature T exceeds a certain level, as in the injected current.
  • T max The maximum temperature at which the self-oscillation is observed is denoted by T max , which is also the temperature at which the self-oscillation is terminated.
  • FIG. 5 is a graph illustrating the results of experiments into the relationships between the energy gap difference (meV) as the X axis and T max (temperature at which self-oscillation is terminated) and P max (maximum light output power by self-oscillation at room temperature) as the Y axes.
  • the experiment results show that no self-oscillation was observed when the energy gap difference was 10 meV or 20 meV, but observed when it was 30 meV.
  • the energy gap difference of 30 meV self-oscillation was observed at a temperature as high as 51°C and a light output power as high as 5 mW was obtained by self-oscillation.
  • the self-oscillation started when the energy gap difference reached 30 meV, and the self-oscillation was confirmed to have continued up to 200 meV.
  • both T max and P max were high when the energy gap difference was in the range of 50 to 100 meV. This range is therefore confirmed to be the practically preferable range.
  • Figure 6 is a graph illustrating the relationship between the energy gap difference (meV) as the X axis and the operating current (mA) as the Y axis. As is observed from this graph, when the energy gap difference exceeds 100 meV, the operating current exceeds 130 mA.
  • Figure 7 is a graph illustrating the relationship between the operating current and the life time of the semiconductor laser of this example. This graph is based on the measurement results obtained under the conditions where the light output power of the semiconductor laser is maintained at 5 mW and the operating temperature is 60°C. From Figure 7 it is observed that the operating current should be set at 130 mA or less to obtain a life time of 5000 hours or more.
  • the energy gap difference is preferably 100 meV or less in consideration of the life time of the semiconductor laser.
  • the compositions and the thicknesses of the active layer and the saturable absorption layer may be adjusted to set the energy gap difference ( ⁇ E) between the active layer and the saturable absorption layer within a predetermined range.
  • ⁇ E energy gap difference
  • an energy gap difference ( ⁇ E) in the range of 30 meV to 200 meV can be obtained by adjusting the composition of the saturable absorption layer as shown in Table 2 below.
  • the above Table 2 shows the values obtained when the thickness of the saturable absorption layer is 50 ⁇ .
  • the energy gap difference ( ⁇ E) increases.
  • the Ga mole fraction x of the saturable absorption layer increases.
  • the energy gap difference ( ⁇ E) decreases.
  • the Ga mole fraction x of the well layers increases.
  • Figure 8 is a graph illustrating the current-light output power characteristics of the semiconductor laser of this example.
  • the X axis of the graph represents the injected current to the semiconductor laser (mA), while the Y axis represents the light output power (mW).
  • the threshold current is about 50 mA.
  • a feature of the self-oscillation type semiconductor laser distinguished from normal semiconductor lasers is that the light output power sharply increases at and around the threshold current, as is observed from Figure 8 . This occurs because, with the existence of the saturable absorption layer, the light output power is not released outside until a sufficient amount of injected carriers are accumulated. When the injected current exceeds a certain value, laser oscillation is started, increasing the light output power in proportion to the injected current.
  • Figure 9 shows an output waveform of the semiconductor laser of this example at a point P 1 of Figure 8 .
  • the light output power greatly fluctuates during a short period of 2 ns, indicating self-oscillation.
  • the dope level of the saturable absorption layer is set at 2 ⁇ 10 18 (cm -3 ) so as to reduce the life time of carriers. This increases the contribution of spontaneous emission to the temporal change rate of the carrier density, facilitating the self-oscillation.
  • a dope level of 1 ⁇ 10 18 (cm -3 ) or more is effective in reducing the life time of carriers.
  • the thickness of the saturable absorption layer is not limited to 50 ⁇ used in this example.
  • the saturable absorption layer can also be of the multiple quantum well structure or of the bulk structure.
  • the semiconductor laser of this example includes an n-type GaAs substrate 701 and a semiconductor multilayer structure formed on the GaAs substrate 701 .
  • the semiconductor multilayer structure includes an n-type GaAs buffer layer 702 , an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a , an optical guide layer 707 , a second p-type AlGaInP cladding layer 705b , a saturable absorption layer 706 made of p-type GaInP, and a third p-type AlGaInP cladding layer 705c .
  • a stripe ridge (width: 2.0 to 7.0 ⁇ m) extending in a cavity length direction is formed in the upper portion of the third p-type AlGaInP cladding layer 705c .
  • a contact layer 710 is formed on the top surface of the ridge of the third p-type cladding layer 705c.
  • An n-type GaAs current blocking layer 711 is formed on the third p-type cladding layer 705c and the sides of the contact layer 710.
  • a p-type GaAs cap layer 712 is formed over the contact layer 710 and the current blocking layer 711.
  • a p-electrode 713 is formed on the top surface of the cap layer 712, while an n-electrode 714 is formed on the bottom surface of the substrate 701 .
  • the active layer 704 is of a multiple quantum well structure composed of three pairs of a well layer and a barrier layer.
  • the n-type AlGaInP cladding layer 703, the first p-type AlGaInP cladding layer 705a, the optical guide layer 707, the second p-type AlGaInP cladding layer 705b , the saturable absorption layer 706 , and the third p-type AlGaInP cladding layer 705c constitute the cladding structure.
  • the semiconductor laser of this example is different from that of the previous example in that the optical guide layer 707 is formed in the cladding structure as will be described later in detail.
  • Figure 11 shows the distribution of an Al mole fraction x of (Al x Ga 1-x ) 0.5 In 0.5 P in the portions of the semiconductor laser of this example covering the n-type cladding layer 703 to the third p-type cladding layer 705c.
  • the Al mole fraction of the n-type cladding layer, the first p-type cladding layer, the second p-type cladding layer, the third p-type cladding layer, and the optical guide layer is 0.5.
  • the well layers of the active layer 704 and the saturable absorption layer 706 are made of Ga 0.45 In 0.55 P and Ga 0.40 In 0.60 P, respectively.
  • the difference between the ground states of the saturable absorption layer and the well layers is set at 57 meV.
  • the energy gap difference is required to be in the range of 30 to 200 meV, preferably in the range of 50 to 100 meV.
  • a feature of the semiconductor laser of this example is that the optical guide layer is formed in the cladding structure while the volume of the saturable absorption layer is reduced.
  • the volume of the saturable absorption layer is smaller, the carrier density of the layer can be increased more easily.
  • the carrier density is higher, the light absorption is saturated more easily, exhibiting even better saturable absorption effect.
  • the volume of the saturable absorption layer is smaller, stronger self-oscillation is obtained.
  • the confinement factor of the saturable absorption layer lowers.
  • the optical guide layer is formed between the active layer and the saturable absorption layer, so that the distribution of laser light can be expanded from the active layer toward the saturable absorption layer, thereby increasing the confinement factor of the saturable absorption layer and enhancing the interaction between the saturable absorption layer and light.
  • the optical guide layer in this example is provided to enhance the confinement factor of the saturable absorption layer, which differs greatly in the function from conventional optical guide layers provided to enhance the confinement factor of the active layer.
  • Figures 12A and 12B show the light intensity distributions obtained when no optical guide layer is provided and when an optical guide layer is provided, respectively.
  • two peaks of light intensity appear by forming a semiconductor layer with a relatively smaller energy gap (higher refractive index) compared with other portions of the cladding structure, as the optical guide layer, at a position apart from the active layer.
  • the confinement factor in both the active layer and the optical guide layer is achieved, allowing light to be effectively distributed to the saturated absorption layer.
  • Figure 13 is a graph showing the dependency of the confinement factor upon the thickness of the optical guide layer.
  • the X axis of this graph represents the thickness of the optical guide layer ( ⁇ ), and the Y axis thereof represents the confinement factor (%).
  • the "confinement factor" of a layer as used herein means the percentage of light existing within the layer of the total light amount.
  • the confinement factors of the active layer and the saturable absorption layer are required to be 5% or more and 1.2% or more, respectively.
  • the thickness of the optical guide layer should be in the range of 300 to 1200 ⁇ .
  • the saturable absorption layer is formed at a position apart from the optical guide layer.
  • it may be formed inside the optical guide layer as shown in Figure 14 .
  • self-oscillation can be obtained by forming the saturable absorption layer inside the optical guide layer so that the confinement factor of the saturable absorption layer is 1.2% or more.
  • the active layer is of the multiple quantum well structure.
  • a semiconductor layer with the stable self-oscillation characteristics can also be realized using an active layer of a single quantum well structure.
  • the energy gap difference between the ground states of the quantum well layer and the saturable absorption layer should be in the range of 30 to 200 meV, especially in the range of 50 to 100 meV.
  • the effect of the present invention can also be obtained by a semiconductor laser including a bulk type active layer having no quantum well as long as the energy gap difference is set at a value within the above range.
  • the positional relationship between the optical guide layer and the saturable absorption layer is not limited to that in Example 2 where the optical guide layer is formed between the saturable absorption layer and the active layer. Referring to Figure 15, the positional relationship between the optical guide layer and the saturable absorption layer will be described. In Figure 15, the saturable absorption layer may be formed at any of positions SA1 to SA5 shown by dotted lines.
  • the position SA1 corresponds to the position of the saturable absorption layer adopted in Example 2. While the position SA1 is apart from the optical guide layer, the saturable absorption layer may be formed adjacent to the optical guide layer.
  • the positions SA2 to SA4 indicate the positions of the saturable absorption layer formed inside the optical guide layer.
  • the position SA5 indicates the position of the saturable absorption layer formed between the optical guide layer and the active layer. Though the position SA5 is apart from the optical guide layer, the saturable absorption layer may be adjacent to the optical guide layer.
  • the ground state of the saturable absorption layer slightly varies from that obtained when the saturable absorption layer is formed outside the optical guide layer because the respective height of the barrier of the quantum well in each case, as viewed from the saturable absorption layer, are different from each other.
  • the impurities in the saturable absorption layer may adversely affect the active layer if the saturable absorption layer is formed near the active layer.
  • the saturable absorption layer is preferably formed apart from the active layer by a distance of 200 ⁇ or more when the saturable absorption layer with an impurity density of 1 ⁇ 10 18 cm -3 or more is formed.
  • a plurality of saturable absorption layers may be formed.
  • saturable absorption layers may be formed at two or more of the positions SA1 to SA5 shown in Figure 15.
  • the saturable absorption layer may be of the multiple quantum well structure.
  • the total volume of the saturable absorption layers increases, lowering the carrier density of the saturable absorption layers. If a plurality of saturable absorption layers made of a material with a comparatively large refractive index are formed close to one another, light tends to be confined in the portion where the saturable absorption layers are closely formed. This lowers the necessity of forming an optical guide layer.
  • a plurality of optical guide layers may be formed separately.
  • a pair of optical guide layers may be formed to sandwich the saturable absorption layer. If the pair of optical guide layers are formed in contact with the saturable absorption layer, the resultant structure is the same as that obtained when the saturable absorption layer is formed at the position SA3 in Figure 15. This can be expressed as the structure where the saturable absorption layer is formed inside the optical guide layer.
  • the thickness of the optical guide layer with the saturable absorption layer formed therein should be the sum of a thickness T1 of a first optical guide portion and a thickness T2 of a second optical guide portion shown in Figure 16.
  • a plurality of semiconductor laser elements are formed from one semiconductor wafer. More specifically, after a p-type electrode and an n-type electrode are formed on both surfaces of a semiconductor wafer, the semiconductor wafer is cleaved to obtain a plurality of bars. The cleaved face of each bar is coated with a reflective film.
  • a semiconductor laser element having characteristics which are not within a predetermined allowance is discarded as being defective. For example, when a semiconductor laser element as a chip is pulse-driven at room temperature, it is discarded as being defective if the threshold current thereof is not within the range of 100 to 200 mA.
  • each of laser chips which have passed the chip inspection process is sealed in a can and subjected to an assembling process.
  • the inventors of the present invention have found that, for a semiconductor laser element having a saturable absorption layer doped with p-type impurities, the characteristics of the semiconductor laser element obtained at the start of the oscillation are different from those obtained one minute or more after the start of oscillation. It has also been found that the characteristics are stabilized several minutes after the start of laser oscillation. More specifically, the characteristics remain in a substantially fixed state about ten minutes after the start of the laser oscillation. For example, it is assumed that the semiconductor laser is driven under the condition of outputting a fixed light power. At this time, while it operates at a driving current of about 100 mA immediately after the start of oscillation, it changes to operate at a driving current of about 70 mA after the lapse of 1 to 10 minutes, in some cases.
  • the operating current of the semiconductor laser element should preferably not vary. Accordingly, prior to distribution of semiconductor laser elements of the present invention, a process for stabilizing the characteristics (for example, the threshold current), i.e., the aging process, should be preferably conducted.
  • the aging process may be a process where the semiconductor laser element is consecutively oscillated at room temperature for 1 to 120 minutes, or a process where it is pulse-oscillated at 50°C for 1 to 120 minutes. This aging process should be conducted after the chip assembling process.
  • the characteristics of the semiconductor laser element can be stabilized by annealing the semiconductor wafer at 300 to 800°C for about 10 to 60 minutes before the semiconductor wafer is separated into a plurality of bars, instead of the aging process.
  • This annealing process enables the characteristics of the semiconductor laser element to be stabilized while it is in the wafer state before the assembling process. By testing and discarding the defective element before the assembling process in this manner, a wasteful process of assembling a defective element is eliminated.
  • the process can be conducted for a plurality of semiconductor laser elements simultaneously, not for the individual semiconductor laser elements.
  • this annealing process for stabilizing the characteristics may be conducted after the separation of the wafer into laser bars.
  • the above-mentioned aging process and the annealing process are particularly effective for a saturable absorption layer doped with p-type impurities (especially, Zn) at high density.
  • AlGaInP type semiconductor laser elements were specifically described.
  • the present invention is not limited to this type of semiconductor laser.
  • the present invention is also applicable to Al x Ga 1-x As (0 ⁇ x ⁇ 1) type, Al x Ga y In 1-x-y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1) type, and Mg x Zn 1-x S y Se 1-y (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1) type semiconductor laser elements.
  • stable self-oscillation can be attained by forming a saturable absorption layer doped with impurities of 1 ⁇ 10 18 cm -3 or more.
  • the active layer is made of Al 0.1 Ga 0.9 As
  • the saturable absorption layer is made of GaAs
  • the cladding layers are made of AlGaAs, for example.
  • the active layer is made of In 0.05 Ga 0.95 N
  • the saturable absorption layer is made of In 0.2 Ga 0.8 N
  • the cladding layers are made of Al 0.1 Ga 0.9 N, for example.
  • the active layer is made of Cd 0.2 Zn 0.8 Se
  • the saturable absorption layer is made of Cd 0.3 Zn 0.7 Se
  • the cladding layers are made of Mg 0.1 Zn 0.9 S 0.1 Se 0.9 , for example.
  • the optical disk device of this example includes a semiconductor laser element 901 of the present invention described above, a collimator lens 903 for collimating a laser beam 902 (wavelength: 650 nm) emitted from the semiconductor laser element 901 , a diffraction grating 904 for splitting the parallel beam into three laser beams (only one laser beam is shown in Figure 17 ), a half prism 905 for allowing a specific component of the laser beam to transmit therethrough or be reflected therefrom, and a condenser lens 906 for converging the laser beam output from the half prism 905 on an optical disk 907.
  • a laser beam spot with a diameter of about 1 ⁇ m, for example, is formed on the optical disk 907.
  • the optical disk 907 not only a read only disk but also a rewritable disk can be used.
  • the laser beam reflected from the optical disk 907 is first reflected from the half prism 905 , passes through a light receiving lens 908 and a cylindrical lens 909 , and is incident on a light receiving element 910 .
  • the light receiving element 810 includes a photodiode divided into a plurality of portions, and generates an information reproduction signal, tracking signal, and a focusing error signal based on the laser beam reflected from the optical disk 907.
  • a driving system 811 drives the optical system based on the tracking signal and the focusing error signal, so as to adjust the position of the laser beam spot on the optical disk 907 .
  • the semiconductor laser element 901 of this example includes the saturable absorption layer doped with impurities at high density. With such a saturable absorption layer, low-level relative intensity noise can be kept low even when part of the laser beam reflected form the optical disk 907 returns to the semiconductor laser element 901 after passing through the half prism 905 and the diffraction grating 904.
  • the semiconductor laser element shown in Figure 2 exhibits self-oscillation until the light output power reaches the level of about 10 mW. As the light output power is increased beyond the level, the oscillation gradually shifts from the self-oscillation to a single mode oscillation. For example, the self-oscillation no more occurs when the light output power is about 15 mW.
  • the semiconductor laser element should be in the state of self-oscillation where no return light noise arises.
  • self-oscillation is not necessary. Thus, not only low-distortion reproduction of information but also recording is possible by recording information with a light output power of about 15 mW and reproducing information with a light output power of about 5 mW, for example.
  • low-distortion reproduction can be attained with a wavelength in the range of 630 to 680 nm without using a circuit component for high-frequency superimposition.
  • the optical disk device of this example uses a laser unit including the semiconductor laser element according to the present invention described above.
  • the laser unit includes a silicon substrate having photodiodes and a semiconductor laser element mounted on the silicon substrate.
  • a micromirror is formed on the silicon substrate for reflecting a laser beam emitted from the semiconductor laser element.
  • a concave portion 2 is formed in the center of a principal surface 1a of a silicon substrate 1 (7 mm ⁇ 3.5 mm), and a semiconductor laser element 3 is disposed on the bottom surface of the concave portion 2.
  • a side wall of the concave portion 2 is tilted to serve as a micromirror 4. If the principal surface 1a of the silicon substrate 1 was the (100) orientation, a (111) plane may be exposed by anisotropy etching to be used as the micromirror 4 .
  • a (111) plane tilted from the principal surface 1a by 45° can be obtained by using an off-substrate tilted from the (100) plane by 9° in a ⁇ 110> direction.
  • Another (111) plane formed opposite the above (111) plane tilts from the principal surface 1a by 63°.
  • No micromirror 4 is formed in this plane, but a photodiode for monitoring light output power is formed as will be described later.
  • the (111) plane formed by anisotropy etching is a smooth mirror face, serving as the excellent micromirror 4 .
  • a metal film which is not likely to absorb laser light is preferably formed on at least the tilted plane of the silicon substrate 1 .
  • five-divided photodiodes 6a and 6b for light signal detection are also formed on the silicon substrate 1 .
  • a laser beam emitted from the semiconductor laser element (not shown in Figure 19 ) of the laser unit 10 with the above-described structure is reflected from the micromirror (not shown in Figure 19 ) and then split into three beams by a grating formed on the bottom surface of a hologram element 11 (only one beam is shown in Figure 19 for simplification). Then, the laser beam passes through a quarter wave plate (1/4 ⁇ plate) 12 and an objective lens 13 to be converged on an optical disk 14 .
  • the laser beam reflected from the optical disk 14 passes through the objective lens 13 and the 1/4 ⁇ plate 12 , and then diffracted by a grating formed on the top surface of the hologram element 11 .
  • This diffraction forms a minus first-order beam and a plus first-order beam as shown in Figure 20.
  • the minus first-order beam irradiates a light receiving surface 15a located left in Figure 20, while the plus first-order beam irradiates a light receiving surface 15b located right in Figure 20.
  • the pattern of the grating formed on the top surface of the hologram element 11 is adjusted so that the minus first-order beam and the plus first-order beam have different focal distances.
  • the shape of a spot of the reflected laser beam formed on the light receiving surface 15a of the laser unit 10 is the same as the shape of a spot of the reflected laser beam formed on the light receiving surface 15b .
  • the shape of the spot of the reflected laser beam formed on the light receiving surface 15a is different from that formed on the light receiving surface 15b.
  • FES (S1 + S3 + S5) - (S2 + S4 + S6) wherein S1 to S3 denote signal intensities output from three center photodiodes of total five photodiodes constituting the light receiving surface 15a , and S4 to S6 denote signal intensities output from three center photodiodes of total five photodiodes constituting the light receiving surface 15b .
  • FES (S1 + S3 + S5) - (S2 + S4 + S6)
  • S1 to S3 denote signal intensities output from three center photodiodes of total five photodiodes constituting the light receiving surface 15a
  • S4 to S6 denote signal intensities output from three center photodiodes of total five photodiodes constituting the light receiving surface 15b .
  • RES (S1 + S3 + S5) + (S2 + S4 + S6)
  • the laser unit where the semiconductor laser element and the photodiodes are integrally formed is used.
  • these elements may be individually formed.
  • the size of the optical disk device can be reduced by using the laser unit where the semiconductor laser and the photodiodes are integrally formed. Moreover, since the photodiodes and the micromirror are preformed in the silicon substrate, only the semiconductor laser element is required to be optically aligned with respect to the silicon substrate. With this easy optical alignment, the assembling precision increases and the production process can be simplified.
  • the saturable absorption layer absorbs light efficiently and the light absorption is saturated.
  • the saturation condition of the saturable absorption layer is optimal and the operating current does not increase when the energy gap difference is in the range of 50 to 100 meV, providing good self-oscillation characteristics.
  • the carrier density of the saturable absorption layer can be easily increased even when the volume thereof is small, providing strong and stable self-oscillation characteristics.
  • a light source suitable for next-generation large-capacity light information recording can be provided.
  • the optical disk device including such a semiconductor laser is free from intensity noise caused by return of light reflected from the disk surface and temperature change, and thus signal read errors are reduced, providing great significance to the industry.

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EP96931223A 1995-09-29 1996-09-17 Semiconductor laser and optical disk device using the laser Expired - Lifetime EP0872925B1 (en)

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JPH05327131A (ja) 1992-05-26 1993-12-10 Matsushita Electron Corp 半導体レーザ装置
JPH0722695A (ja) 1993-06-30 1995-01-24 Sanyo Electric Co Ltd 自励発振型半導体レーザ素子
JP3281666B2 (ja) 1993-03-02 2002-05-13 三洋電機株式会社 半導体レーザ
JPH06194405A (ja) 1992-12-24 1994-07-15 Nec Corp 半導体レーザエージング装置
JP3294379B2 (ja) 1993-06-03 2002-06-24 オリンパス光学工業株式会社 受発光素子
JPH0786676A (ja) 1993-09-10 1995-03-31 Sony Corp 半導体レーザ
JPH07169056A (ja) 1993-12-16 1995-07-04 Sanyo Electric Co Ltd フォトンモード光記録媒体の記録再生方法及び記録再生装置
JP3459457B2 (ja) 1994-03-18 2003-10-20 三洋電機株式会社 自励発振型半導体レーザ素子
JPH08222801A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体レーザ
EP0872925B1 (en) * 1995-09-29 2002-04-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
JPH09148668A (ja) * 1995-11-24 1997-06-06 Mitsubishi Electric Corp パルセーションレーザとその製造方法

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US6195374B1 (en) 2001-02-27
CN1117419C (zh) 2003-08-06
TW536044U (en) 2003-06-01
KR19990063946A (ko) 1999-07-26
US6373874B1 (en) 2002-04-16
HK1017161A1 (en) 1999-11-05
US6444485B1 (en) 2002-09-03
EP0872925A4 (en) 1998-12-23
WO1997013303A1 (fr) 1997-04-10
KR100323928B1 (ko) 2002-06-20
CN1201559A (zh) 1998-12-09
DE69620456D1 (de) 2002-05-08
EP0872925A1 (en) 1998-10-21
DE69620456T2 (de) 2002-11-14

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