DE69620456T2 - Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers - Google Patents

Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers

Info

Publication number
DE69620456T2
DE69620456T2 DE69620456T DE69620456T DE69620456T2 DE 69620456 T2 DE69620456 T2 DE 69620456T2 DE 69620456 T DE69620456 T DE 69620456T DE 69620456 T DE69620456 T DE 69620456T DE 69620456 T2 DE69620456 T2 DE 69620456T2
Authority
DE
Germany
Prior art keywords
laser
storage device
optical disk
disk storage
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69620456T
Other languages
English (en)
Other versions
DE69620456D1 (de
Inventor
Isao Kidoguchi
Hideto Adachi
Masaya Mannoh
Toshiya Fukuhisa
Akira Takamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69620456D1 publication Critical patent/DE69620456D1/de
Publication of DE69620456T2 publication Critical patent/DE69620456T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69620456T 1995-09-29 1996-09-17 Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers Expired - Lifetime DE69620456T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP25270795 1995-09-29
JP25270695 1995-09-29
JP615896 1996-01-17
JP615796 1996-01-17
JP20864596 1996-08-07
PCT/JP1996/002666 WO1997013303A1 (fr) 1995-09-29 1996-09-17 Laser a semi-conducteurs et disque optique l'utilisant

Publications (2)

Publication Number Publication Date
DE69620456D1 DE69620456D1 (de) 2002-05-08
DE69620456T2 true DE69620456T2 (de) 2002-11-14

Family

ID=27518677

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620456T Expired - Lifetime DE69620456T2 (de) 1995-09-29 1996-09-17 Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers

Country Status (8)

Country Link
US (3) US6373874B1 (de)
EP (1) EP0872925B1 (de)
KR (1) KR100323928B1 (de)
CN (1) CN1117419C (de)
DE (1) DE69620456T2 (de)
HK (1) HK1017161A1 (de)
TW (1) TW536044U (de)
WO (1) WO1997013303A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323928B1 (ko) * 1995-09-29 2002-06-20 모리시타 요이찌 반도체 레이저 및 이 반도체 레이저를 이용한 광디스크 장치
EP0908988A3 (de) * 1997-10-06 2001-10-17 Sharp Kabushiki Kaisha Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JP3521793B2 (ja) * 1999-03-03 2004-04-19 松下電器産業株式会社 半導体レーザの製造方法
US6784209B1 (en) 1999-10-18 2004-08-31 Muscletech Research And Development Inc. Food supplement for increasing lean mass and strength
JP3726252B2 (ja) 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法
JP3813450B2 (ja) * 2000-02-29 2006-08-23 古河電気工業株式会社 半導体レーザ素子
US6717175B2 (en) * 2001-09-27 2004-04-06 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for manufacturing the same
US7116692B2 (en) * 2001-12-11 2006-10-03 Rohm Co., Ltd. Semiconductor laser and method of producing the same
US8442084B2 (en) * 2002-10-03 2013-05-14 Laser Operations Llc High performance vertically emitting lasers
JP4091529B2 (ja) * 2003-11-20 2008-05-28 ローム株式会社 半導体レーザ
US20050180482A1 (en) * 2004-01-23 2005-08-18 Osowski Mark L. Very low cost surface emitting laser diode arrays
JP2005236024A (ja) * 2004-02-19 2005-09-02 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2006108350A (ja) * 2004-10-05 2006-04-20 Stanley Electric Co Ltd 半導体発光素子
US20080198890A1 (en) * 2007-02-21 2008-08-21 Ungar Jeffrey E Vertically emitting laser and method of making the same
US7830938B2 (en) * 2008-12-15 2010-11-09 Jds Uniphase Corporation Laser diode
CN103414106B (zh) * 2013-08-16 2015-07-15 中国科学院半导体研究所 硅基半导体超短脉冲激光器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135175A (ja) * 1984-12-05 1986-06-23 Fujitsu Ltd 半導体レ−ザの発振しきい値電流測定方法
DE3787769T2 (de) * 1986-07-25 1994-02-24 Mitsubishi Electric Corp Halbleiterlaservorrichtung.
JP2569036B2 (ja) 1987-02-18 1997-01-08 株式会社日立製作所 半導体レ−ザ装置
JPH02153584A (ja) * 1988-12-05 1990-06-13 Mitsubishi Electric Corp 半導体レーザ装置
US5140149A (en) * 1989-03-10 1992-08-18 Canon Kabushiki Kaisha Optical apparatus using wavelength selective photocoupler
JPH04162687A (ja) * 1990-10-26 1992-06-08 Olympus Optical Co Ltd 半導体レーザ装置
JPH05327131A (ja) * 1992-05-26 1993-12-10 Matsushita Electron Corp 半導体レーザ装置
JPH0722695A (ja) 1993-06-30 1995-01-24 Sanyo Electric Co Ltd 自励発振型半導体レーザ素子
JP3281666B2 (ja) 1993-03-02 2002-05-13 三洋電機株式会社 半導体レーザ
JPH06194405A (ja) * 1992-12-24 1994-07-15 Nec Corp 半導体レーザエージング装置
JP3294379B2 (ja) * 1993-06-03 2002-06-24 オリンパス光学工業株式会社 受発光素子
JPH0786676A (ja) * 1993-09-10 1995-03-31 Sony Corp 半導体レーザ
JPH07169056A (ja) * 1993-12-16 1995-07-04 Sanyo Electric Co Ltd フォトンモード光記録媒体の記録再生方法及び記録再生装置
JP3459457B2 (ja) 1994-03-18 2003-10-20 三洋電機株式会社 自励発振型半導体レーザ素子
JPH08222801A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体レーザ
KR100323928B1 (ko) * 1995-09-29 2002-06-20 모리시타 요이찌 반도체 레이저 및 이 반도체 레이저를 이용한 광디스크 장치
JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
JPH09148668A (ja) * 1995-11-24 1997-06-06 Mitsubishi Electric Corp パルセーションレーザとその製造方法

Also Published As

Publication number Publication date
CN1201559A (zh) 1998-12-09
HK1017161A1 (en) 1999-11-05
EP0872925A4 (de) 1998-12-23
CN1117419C (zh) 2003-08-06
TW536044U (en) 2003-06-01
US6195374B1 (en) 2001-02-27
DE69620456D1 (de) 2002-05-08
US6444485B1 (en) 2002-09-03
WO1997013303A1 (fr) 1997-04-10
KR100323928B1 (ko) 2002-06-20
US6373874B1 (en) 2002-04-16
EP0872925A1 (de) 1998-10-21
KR19990063946A (ko) 1999-07-26
EP0872925B1 (de) 2002-04-03

Similar Documents

Publication Publication Date Title
DE69736015D1 (de) Halbleiterlasermodul und optischer Faserverstärker
DE69510257T2 (de) Polarisationsselektiver Halbleiterlaser und optisches Kommunikationssystem unter Verwendung dieses Lasers
DE69620456D1 (de) Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers
DE69600964T2 (de) Optische Nahfeldvorrichtung mit Laserquelle
DE69408802T2 (de) Polarisationsmodenselektiver Halbleiterlaser, Lichtquelle und optisches Kommunikationssystem unter Verwendung dieses Lasers
DE69721888D1 (de) Laservorrichtung mit sehr kurzen optischen Pulsen
DE69606664D1 (de) Optische gepumpter Festkörperlaserkopf
DE69405427D1 (de) Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser
DE69809279T2 (de) Optische Abtastvorrichtung und optisches Plattengerät zur Verwendung derselben
DE69732278D1 (de) Optische Faserlaservorrichtung
DE69505900T2 (de) Halbleiterlaser mit integrierter Wellenleiterlinse
DE3851522D1 (de) Laser und optische Verstärker mit Frequenz-Addition.
DE69311937D1 (de) Integrierter optischer Verstärker und Laser mit einem solchen Verstärker
DE69917291D1 (de) Laserleistungskontrollvorrichtung und optisches plattengerät
DE69619047T2 (de) Halbleiterlaservorrichtung und Antrieb für optische Platte
DE69735896D1 (de) Optischer modulator und optischer verstärker unter verwendung desselben
DE59810118D1 (de) Laseroptik sowie Diodenlaser
DE69739627D1 (de) Optische Halbleiterwellenleitervorrichtung mit niedriger Divergenz und Verwendung in einem Fabry-Perot- oder DFB-Laser
DE69614766D1 (de) Laser und Verwendungen
DE69609878D1 (de) Optische Abtastvorrichtung und optisches Aufzeichnungs- und Wiedergabegerät
DE69801468D1 (de) Optische Abtastvorrichtung mit Halbleiterlaser und zugehöriges Verfahren
DE69604636T2 (de) Laseraufzeichnungselement
DE29623380U1 (de) Retroreflektives Abtastmodul für elektrooptische Laser
DE29505195U1 (de) Dioden-Laser
DE69614909D1 (de) Optische Aufzeichnungsverfahren und optisches Aufzeichnungsgerät

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP