EP0632550A2 - Modulation de diodes laser - Google Patents

Modulation de diodes laser Download PDF

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Publication number
EP0632550A2
EP0632550A2 EP94304780A EP94304780A EP0632550A2 EP 0632550 A2 EP0632550 A2 EP 0632550A2 EP 94304780 A EP94304780 A EP 94304780A EP 94304780 A EP94304780 A EP 94304780A EP 0632550 A2 EP0632550 A2 EP 0632550A2
Authority
EP
European Patent Office
Prior art keywords
laser diode
semiconductor laser
optical
semiconductor
optical modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP94304780A
Other languages
German (de)
English (en)
Other versions
EP0632550A3 (fr
Inventor
Hiromitsu C/O Fujitsu Limited Kawamura
Hisashi C/O Fujitsu Limited Hamaguchi
Kazuhiro C/O Fujitsu Limited Yamaji
Kiyotsugu C/O Fujitsu Limited Kamite
Haruhisa C/O Fujitsu Limited Soda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of EP0632550A2 publication Critical patent/EP0632550A2/fr
Publication of EP0632550A3 publication Critical patent/EP0632550A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors

Definitions

  • Figs. 3A and 3B show a configuration of such a MI-DFB-LD.
  • Fig. 3A is an oblique view showing an appearance of the MI-DFB-LD.
  • Fig. 3B is a circuit diagram of the MI-DFB-LD.
  • reference numeral 1 denotes a DFB laser diode
  • 100 denotes a semiconductor substrate on which the semiconductor laser diode 1 and the optical modulator are formed
  • 102 denotes a mounting base
  • 103 denotes a sealing cover
  • 105 denotes a Peltier element
  • 106 denotes a lead pin having a terminal to which each electrode of the MI-DFB-LD and the Peltier element is connected
  • 110 denotes a bonding wire.
  • the space within the sealing cover 103 is filled with an inert gas such as nitrogen (N2), helium (He), etc.
  • the impedance element does not exist in the optical module, the same problem will occur when the impedance between a ground pin of the optical module and ground is large.
  • reference numeral 1 denotes a semiconductor laser diode
  • 2 denotes an optical modulator
  • 3 denotes a common connection element
  • 82 denotes an impedance element corresponding to a bonding wire
  • 4 denotes a constant current source which supplies constant current to the semiconductor laser diode 1
  • 6 denotes a coaxial cable for transmitting a drive signal to the optical modulator 2
  • 7 denotes a terminator resistor
  • 51 denotes a resistor placed between the semiconductor laser diode 1 and the constant current source 4
  • 4a denotes the parastic capacity across the constant current source and a power source line.
  • Fig. 18 shows the improvement provided by the optical device of the second embodiment.
  • Fig. 18 also shows a change in bit error rate in a form similar to that in Fig. 16.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
EP94304780A 1993-06-30 1994-06-30 Modulation de diodes laser. Withdrawn EP0632550A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP161839/93 1993-06-30
JP16183993 1993-06-30

Publications (2)

Publication Number Publication Date
EP0632550A2 true EP0632550A2 (fr) 1995-01-04
EP0632550A3 EP0632550A3 (fr) 1995-04-26

Family

ID=15742919

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94304780A Withdrawn EP0632550A3 (fr) 1993-06-30 1994-06-30 Modulation de diodes laser.

Country Status (4)

Country Link
US (1) US6044097A (fr)
EP (1) EP0632550A3 (fr)
KR (1) KR950002137A (fr)
CA (1) CA2127060A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0753782A1 (fr) * 1995-07-14 1997-01-15 Nec Corporation Modulateur optique à semi-conducteur et circuit de contrÔle
FR2738926A1 (fr) * 1995-09-20 1997-03-21 Mitsubishi Electric Corp Module modulateur de lumiere et procede pour fabriquer un tel module
DE19700261A1 (de) * 1996-07-29 1998-02-05 Mitsubishi Electric Corp Optisches Halbleiterbauelement
EP1184949A2 (fr) * 2000-08-28 2002-03-06 Agere Systems Optoelectronics Guardian Corporation Transmetteur laser à réaction distribuée avec modulateur intégré à électro absorption
EP1324441A2 (fr) * 2001-11-29 2003-07-02 Mitsubishi Denki Kabushiki Kaisha Module optique
WO2006015723A1 (fr) * 2004-08-07 2006-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laser a cascade quantique a perte de puissance reduite
EP1800421A2 (fr) * 2004-10-15 2007-06-27 Corning Incorporated Communication par ondes radio et guides d'ondes optiques

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937637B1 (en) * 2000-02-01 2005-08-30 Research Investment Network, Inc. Semiconductor laser and associated drive circuit substrate
US6593829B2 (en) * 2001-09-06 2003-07-15 Anritsu Company Microstrip dot termination usable with optical modulators
JP4046535B2 (ja) * 2002-03-29 2008-02-13 ユーディナデバイス株式会社 光半導体装置、光モジュール及び光半導体駆動回路
JP2003309330A (ja) 2002-04-12 2003-10-31 Sumitomo Electric Ind Ltd 半導体光素子
US6941080B2 (en) * 2002-07-15 2005-09-06 Triquint Technology Holding Co. Method and apparatus for directly modulating a laser diode using multi-stage driver circuitry
JP2004172237A (ja) * 2002-11-18 2004-06-17 Sharp Corp 光送信制御装置
US7463659B2 (en) * 2003-07-09 2008-12-09 Sumitomo Electric Industries, Ltd. Can-type optical transmitting module utilizing a laser diode with impedance matching resistors
US7425726B2 (en) * 2004-05-19 2008-09-16 Avago Technologies Fiber Ip Pte Ltd. Electroabsorption modulators and methods of making the same
JP4578164B2 (ja) * 2004-07-12 2010-11-10 日本オプネクスト株式会社 光モジュール
TWM272296U (en) * 2005-02-18 2005-08-01 Yun-Shiuan Ye Thin-type laser module
JP2007194365A (ja) * 2006-01-18 2007-08-02 Sumitomo Electric Ind Ltd 光送信回路
JP2009177030A (ja) * 2008-01-25 2009-08-06 Opnext Japan Inc 光送信モジュール及び光伝送装置
US7968902B2 (en) * 2008-03-31 2011-06-28 Bridgelux, Inc. Light emitting devices with constant forward voltage
US10371499B2 (en) 2010-12-27 2019-08-06 Axsun Technologies, Inc. Laser swept source with controlled mode locking for OCT medical imaging
JP5768551B2 (ja) * 2011-07-13 2015-08-26 住友電気工業株式会社 外部変調型レーザ素子の駆動回路
US9441944B2 (en) 2012-05-16 2016-09-13 Axsun Technologies Llc Regenerative mode locked laser swept source for OCT medical imaging
JP6372511B2 (ja) * 2016-04-01 2018-08-15 住友大阪セメント株式会社 光変調器
JP6683825B2 (ja) * 2016-10-20 2020-04-22 日本電信電話株式会社 直接変調レーザ駆動回路
DE112018005189T5 (de) * 2017-11-02 2020-07-02 Sony Corporation Halbleiterlaser-Ansteuerschaltung, Halbleiterlaser-Ansteuerschaltungsverfahren, Distanzmesseinrichtung und Elektronikeinrichtung
JP7073121B2 (ja) 2018-01-31 2022-05-23 日本ルメンタム株式会社 光送信サブアセンブリ及び光モジュール
CN112166535B (zh) * 2018-05-21 2024-01-16 谷歌有限责任公司 用于突发模式可调谐eml传送器的波长漂移抑制
CN112189287A (zh) * 2018-05-21 2021-01-05 谷歌有限责任公司 突发模式激光器驱动电路

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS57145385A (en) * 1981-03-03 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> Method for generating light pulse train
JPH0218978A (ja) * 1988-07-07 1990-01-23 Sumitomo Electric Ind Ltd 半導体レーザの駆動回路
JPH0282681A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体発光装置

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US4177436A (en) * 1977-12-05 1979-12-04 Bell Telephone Laboratories, Incorporated Circuit for controlling the differential output power of a semiconductor laser
FR2415332A1 (fr) * 1978-01-20 1979-08-17 Thomson Csf Dispositif d'alimentation de source lumineuse a semi-conducteur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145385A (en) * 1981-03-03 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> Method for generating light pulse train
JPH0218978A (ja) * 1988-07-07 1990-01-23 Sumitomo Electric Ind Ltd 半導体レーザの駆動回路
JPH0282681A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体発光装置

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Title
IEEE PHOTONICS TECHNOLOGY LETTERS, vol.2, no.12, December 1990, NEW YORK, US pages 896 - 898, XP172345 M.GOTO ET AL. 'A 10-Gb/s Optical Transmitter Module with a Monolithically Integrated Electroabsorption Modulator with a DFB Laser' *
JOURNAL OF LIGHTWAVE TECHNOLOGY, vol.6, no.6, June 1988, NEW YORK, US pages 779 - 7785 M.SUZUKI ET AL. 'Electrical and Optical Interactions between Integrated InGaAsP/InP DFB Lasers and Electroabsorption Modulators' *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 163 (E-910) (4106) 29 March 1990 & JP-A-02 018 978 (SUMITOMO) 23 January 1990 *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 263 (E-938) (4206) 7 June 1990 & JP-A-02 082 681 (FUJITSU) 23 March 1990 *
PATENT ABSTRACTS OF JAPAN vol. 6, no. 247 (E-146) (1125) 7 December 1982 & JP-A-57 145 385 (NIPPON DENSHI) 8 September 1982 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0753782A1 (fr) * 1995-07-14 1997-01-15 Nec Corporation Modulateur optique à semi-conducteur et circuit de contrÔle
US5732097A (en) * 1995-07-14 1998-03-24 Nec Corporation Modulating circuit for semiconductor optical modulator
FR2738926A1 (fr) * 1995-09-20 1997-03-21 Mitsubishi Electric Corp Module modulateur de lumiere et procede pour fabriquer un tel module
GB2305511A (en) * 1995-09-20 1997-04-09 Mitsubishi Electric Corp Wiring arrangement for a semiconductor light modulator
GB2305511B (en) * 1995-09-20 1997-09-24 Mitsubishi Electric Corp Light modulator module and method for fabricating light modulator module
DE19700261A1 (de) * 1996-07-29 1998-02-05 Mitsubishi Electric Corp Optisches Halbleiterbauelement
EP1184949A2 (fr) * 2000-08-28 2002-03-06 Agere Systems Optoelectronics Guardian Corporation Transmetteur laser à réaction distribuée avec modulateur intégré à électro absorption
EP1184949A3 (fr) * 2000-08-28 2002-09-11 Agere Systems Optoelectronics Guardian Corporation Transmetteur laser à réaction distribuée avec modulateur intégré à électro absorption
EP1324441A2 (fr) * 2001-11-29 2003-07-02 Mitsubishi Denki Kabushiki Kaisha Module optique
EP1324441A3 (fr) * 2001-11-29 2004-01-21 Mitsubishi Denki Kabushiki Kaisha Module optique
US6753615B2 (en) 2001-11-29 2004-06-22 Mitsubishi Denki Kabushiki Kaisha Optical element module
WO2006015723A1 (fr) * 2004-08-07 2006-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laser a cascade quantique a perte de puissance reduite
EP1800421A2 (fr) * 2004-10-15 2007-06-27 Corning Incorporated Communication par ondes radio et guides d'ondes optiques
EP1800421A4 (fr) * 2004-10-15 2008-01-23 Corning Inc Communication par ondes radio et guides d'ondes optiques

Also Published As

Publication number Publication date
KR950002137A (ko) 1995-01-04
US6044097A (en) 2000-03-28
EP0632550A3 (fr) 1995-04-26
CA2127060A1 (fr) 1994-12-31

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