EP0605046A1 - Mikrowellenanordnung mit mindestens einem Übergang zwischen einer auf einem Substrat integrierten Übertragungsleitung und einem Hohlleiter - Google Patents

Mikrowellenanordnung mit mindestens einem Übergang zwischen einer auf einem Substrat integrierten Übertragungsleitung und einem Hohlleiter Download PDF

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Publication number
EP0605046A1
EP0605046A1 EP93203621A EP93203621A EP0605046A1 EP 0605046 A1 EP0605046 A1 EP 0605046A1 EP 93203621 A EP93203621 A EP 93203621A EP 93203621 A EP93203621 A EP 93203621A EP 0605046 A1 EP0605046 A1 EP 0605046A1
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EP
European Patent Office
Prior art keywords
guide
cavity
substrate
line
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93203621A
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English (en)
French (fr)
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EP0605046B1 (de
Inventor
Patrice Gamand
Christophe Cordier
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Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Laboratoires dElectronique Philips SAS
Koninklijke Philips Electronics NV
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Publication of EP0605046A1 publication Critical patent/EP0605046A1/de
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Publication of EP0605046B1 publication Critical patent/EP0605046B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the invention relates to a microwave device comprising at least one transition between a transmission line integrated on a substrate, disposed in a said first microwave cavity, and a waveguide formed from said second microwave cavity, this transition comprising an open end of the integrated line forming a probe introduced into the cavity of the guide, at a distance from a short circuit closing the end of the guide, this transition further comprising an impedance adapter system.
  • the invention finds its application in microwave devices which comprise on the one hand integrated circuits and on the other hand waveguides, which must be connected to each other.
  • the invention therefore finds its application in the field of television antennas, and in the field of automobile radars, among others.
  • a transition between a waveguide and a microstrip line is already known from the publication in "1988 IEEE MTT-S Digest, P.4, pp.473-474", entitled “Waveguide-To-Microstrip Transitions FOR MILLIMETER-WAVE Applications “by Yi-Chi SHIH, Thuy-Nhung TON, and Long Q.BUI, belonging to Hughes Aircraft Company, Microwave Products Division, TORRANCE, California, USA.
  • This publication describes a transition between a microwave line of the microstrip type, disposed in a first microwave cavity, and a waveguide formed of a second microwave cavity.
  • This transition includes an open end of the integrated line which is introduced into the waveguide, perpendicular to its axis of propagation, through an opening made in a wall of the waveguide. In this way, the electric field propagation plans of the probe and the guide coincide.
  • This transition further comprises an impedance adapter system applied to the integrated line which consists of a narrowing over a certain length of the microstrip at the surface of the substrate. This length is intended to form a quarter-wave adapter so as to tune the input impedance of the probe to 50 ⁇ .
  • the end of the short-circuit waveguide is located at a distance L from the microstrip conductor and the probe-forming end of the latter enters the guide to a depth D.
  • the known device can be broadband in the K frequency band (18-26 GHz).
  • planar integrated circuits are used operating at very high frequencies between 40 GHz and 100 GHz.
  • These integrated circuits generally include planar transmission lines, for example of the so-called microstrip type, and are connected to each other, or else connected to antenna elements, by means of waveguides.
  • planar integrated circuits operating at such high frequencies, require appropriate packages capable of preserving their performance. They also require devices capable of making a transition between their input / output pads and the connection waveguides.
  • the boxes they must have very high microwave qualities, which are specific to the working frequency of the circuits. Particular emphasis must be placed on the perfection of the ground contacts, and on that of the microwave links between the input / output pads of the integrated circuits and the external elements, connections which must be made by means of conducting wires, for example. in gold, very short and very fine, subject to the various studs by means of micro-welds, produced for example by thermocompression. Emphasis must also be placed on the mechanical resistance and the watertightness of the boxes which must protect the integrated circuits from dust and corrosion liable to deteriorate their electrical qualities; indeed, many microwave circuits used in telecommunications are positioned on antenna mounts or on vehicles and therefore suffer from bad weather.
  • the devices carrying out a waveguide / transmission line transition they must be both compatible with standard waveguides, and with the microwave inputs / outputs of integrated circuits.
  • these devices must have all the mechanical and electrical qualities defined above for the boxes.
  • these devices must be watertight, and must not generate any sealing discontinuity between the waveguides and the integrated circuits.
  • the electrical connections between this kind of transition device and a given integrated circuit must meet the conditions defined above relative to the perfection of microwave contacts and ground contacts.
  • transition devices must show good adaptation, in a wide frequency band, and at frequencies as high as 40 GHz to 100 GHz.
  • the known waveguide / transmission line transition device does not make it possible to obtain the non-rupture of the seal which is required for the microstrip line.
  • the latter is carried out on a substrate by an integrated circuit technique.
  • the cavity which receives it must therefore, for the reasons explained above, be sealed vis-à-vis the waveguide.
  • the flat substrate which supports the probe end introduced into the waveguide does not close the cavity of the guide, since the transverse dimension of the substrate is less than the quantity "a" of the cross section of the guide.
  • the substrate used to make the known device is made of a flexible material (Duroid) which has several features.
  • this flexible substrate is used for two reasons: the first reason is that the transverse dimensions of the substrate are necessarily, for reasons of adaptation, very small, and that only a flexible substrate can support such small dimensions: the second reason is that flexible substrates have a low permeability of the order of 2, while hard substrates, such as alumina have a much higher permeability, on the order of 8 to 10, much further from the air permeability (1). It turns out that this flexible substrate is a drawback for making microwave electrical connections by means of very fine gold wires because, because of its flexibility, the technology of fixing the wires by thermocompression cannot be used.
  • the large dimension "a" of the guide is 3.8 mm.
  • the substrate which is introduced into the guide is much narrower: its width is approximately half of "a” or 1.9 mm.
  • the distance between the two waveguides in the double transition arrangement, also described in the cited publication, is 18 mm.
  • the dimensions of the substrate are therefore finally 1.9 mm ⁇ 18 mm. These dimensions make the substrate very fragile. This is why, in the known arrangement, the substrate cannot be made of a material other than flexible.
  • An object of the invention is therefore to avoid these drawbacks, and in particular to provide a transition device between a guide and a transmission line, capable of housing an integrated circuit with the performance required for a housing: capable of enabling a connection between the transmission line and the microwave pad of the box which is easy to produce industrially, and reliable; and who ensures the sealing of both the transmission line, the integrated circuit and the connection between these two elements.
  • the substrate is made of a material of high permittivity
  • the impedance adapter system comprises on the one hand a restriction of the dimension of said first microwave cavity perpendicular to the direction of propagation, over a length parallel to the direction of propagation in the integrated line, and on the other hand comprises a restriction of the dimensions of the cross section of the guide d wave in the region between the plane of the probe and the plane of short-circuit.
  • this device is characterized in that in the region of the probe, this substrate covers the entire cross section of the waveguide, to produce the seal of the line cavity.
  • FIG.1C shows in section a waveguide / transmission line transition device.
  • the waveguide itself is constituted by the hollow metallic piece 100 which has a rectangular cross section: the short side of dimension b1 is in the plane of FIG.1C, and the long side of dimension a1 is perpendicular in the plan of FIG.1C.
  • the electric field symbolized by an arrow, is parallel to the short side b1 and propagates in the rectangular cavity 102a.
  • the transition comprises a part in the form of a blade called base, or lower blade 1, metallic, attached by fixing means not shown, for example screws, on the one hand to the guide 100, and on the other hand to the support 2 of the substrate 23 of the transmission line.
  • the lower blade 1 has an opening 12a in the extension of the opening 102a of the waveguide; and the metal support 2 has an opening 22a in the extension of the opening 12a of the lower part.
  • the transition comprises a part in the form of a metal blade 3, called the upper intermediate, which is positioned and fixed above the support 2, the substrate 23 itself being disposed in its support with the conductor 24 of the transmission line on its upper side.
  • This upper intermediate blade 3 comprises an opening 32a in the extension of the openings 102a, 12a, 22a of the underlying parts.
  • the transition adapter system includes a narrowing of the waveguide dimensions in the portion between the transmission line and the short circuit plane.
  • the opening 22a of the support blade 2, and the opening 32a of the upper intermediate blade 3 are rectangular, with the short side of the rectangle of dimension b2 ⁇ b1 and parallel to b1 and the short side of the guide opening 102a: and with the long side of the dimension rectangle a2 ⁇ a1, and parallel to a1 the long side of the opening 102a of the guide.
  • the transition between the guide itself 102a, of dimensions a1 x b1, and the narrowed upper part formed of the openings 22a, 32a, of dimensions a2 x b2 is effected by the opening 12a of the lower blade 1, this opening 12a having a funnel shape, with a lower opening dimension equal to a1 x b1 of the guide, and an upper opening dimension equal to a2 x b2 of the narrowed upper part.
  • the narrowed parts 22a, 32a undersized guide parts we will call hereafter the narrowed parts 22a, 32a undersized guide parts.
  • FIG. 1A and 1B represent the substrate 23 seen from the front.
  • the transmission line is made in so-called microstrip technology which comprises a substrate 23, a line conductor formed of the microstrip 24 deposited on the upper face of the substrate 23 and a ground plane formed on the opposite face.
  • the waveguide / transmission line transition takes place by introducing the end 25a of the conductor 24, of a length l into the cavity of the guide formed by the openings 102a, 12a, 22a, 32a. In this cavity, the maximum power is transmitted between the guide and the line, owing to the fact that the short-circuit 42a is disposed at a distance D from the end 25a of the line forming the probe. This distance D is created by the thickness of the upper intermediate piece 3.
  • the projection of the cavity 32a, 33a and 41 made in the intermediate strip 3 for the microwave line formed of the substrate 23 and of the conductor 24 has been shown in dotted lines. So that the narrowed cavity 32a is rectangular or practically rectangular so as to produce the desired adaptation, the cavity 31 of the line has a narrowing 33a over a certain length L parallel to the conductor 24 of the line.
  • the dimension L on which the narrowing is practiced, and the dimension of the narrowing itself in the part 33a are not critical.
  • the substrate 23 is arranged in a groove 26 formed in the support 2, to its dimensions. As shown on F1G.1A and 1B, this substrate is rectangular, and its width is roughly equal to the large dimension a1 of the waveguide itself.
  • FIG. 1B the projection of the cavities 22a and 32a of narrowed dimensions a2 x b2 is shown in dotted lines, and the projection of the cavity 102a of the guide of dimension a1 x b1.
  • the substrate 23 for producing the microstrip transmission line is chosen from a hard material, for example quartz or alumina or a ceramic.
  • a hard material for example quartz or alumina or a ceramic.
  • the permeability of hard materials for microwave substrates is of the order of 8 to 10, that is to say much greater than that of flexible materials which is of the order of 2: the permeability of air being 1.
  • the result is a big change in microwave operation.
  • the hard substrate 23 is chosen to be of dimensions suitable for closing the cavity 102a, 12a, 22a of the waveguide in the upper part of the opening 22a. This is possible because the dimensions of this substrate are greater than those of this opening.
  • this problem is solved by practicing the narrowing of the upper part of the guide embodied by the parts 22a, 32a. At the same time, this solution makes it possible to obtain a frequency band widened towards the high frequencies.
  • this new adaptation means makes it possible to obtain a better adaptation of the order of 22 dB at 70 GHz instead of the known 15 dB, the possibility of working up to frequencies of the order of 100 GHz, and in addition a better seal of the transition.
  • a person skilled in the art will choose to produce with the parts 22a, 32a, an undersized guide which makes it possible to reject the appearance of modes higher at very high frequencies, much higher than the frequencies at which it is desired to work currently in the field of telecommunications: for example higher than 110 GHz.
  • the person skilled in the art will choose an undersized guide structure 22a, 32a having a cutoff frequency just greater than the frequency at which he wishes to work, then he will adjust the distance D from the plane of the short circuit to optimize the coupling between the probe 25a at the end of the microstrip line, and the waveguide.
  • the problem is solved by undersizing the guide opposite the line.
  • the adoption of a hard substrate in the present device creates a disturbance which is used to carry out the adaptation of the guide to the line.
  • the undersizing of the guide makes it possible to position the useful frequency band. The higher the frequency sought, the more the guide will be undersized.
  • FIG.2 show in plan view the different parts of the transition as shown in section in FIG.1C.
  • the elements shown in FIGS. 2A to 2A also make it possible to achieve a double transition, that is to say a transition by microstrip type transmission line between two waveguides having cavities 102a, 102b respectively of dimensions a1 x a2.
  • the different parts 1, 2, 3, 4 are metallic or metallized blades.
  • FIG.2D represents the lower blade 1 of the device, or base, which shows the trace of two openings in the form of truncated pyramids 12a, 12b respectively corresponding to the transition in the form of a funnel between the cavities of the waveguides having the dimensions a1 x b1, and those of the undersized guides in the region included between the ends of probes 25a, 25b and the short circuits 42a, 42b.
  • FIG.2C shows the support blade 2 of the substrate 23.
  • This support blade has a groove 26 of dimensions just greater than those of the substrate, rectangular, with enlargements 21 on the long sides of the substrate, the short sides of the substrate being substantially equal at the large dimension a1 of the guides, and the large dimension of the substrate being suitable for receiving a connection line between two waveguides, that is to say at least 18 mm; the substrate is intended to be bonded to the bottom 27 of the groove 26, which must therefore have a depth at least equal or substantially equal to the thickness of the substrate.
  • the rear face of the substrate is applied by gluing in the bottom 27 of the groove 26 and the excess glue comes out through the enlargements 21.
  • the substrate 23 may have a ground plane on its rear face, in the part in contact with the bottom of the groove, or else the bottom of this groove is used as a ground plane, the glue being chosen to be conductive.
  • transmission line called coplanar, where the ground plane is made on the same face of the substrate as the line conductor.
  • FIG. 2B represents the upper intermediate blade 3 with the cutouts 32a, 32b to form the narrowed (or undersized) guides the narrowing 33a, 33b forming the microwave cavities of the transmission line, and the cavity 31 to receive a circuit integrated to connect with the transmission line.
  • the trace of the substrate 23 is shown in dotted lines in this FIG. 2B.
  • the thickness of this blade 3 is D.
  • FIG. 2A represents the upper blade 4, said cover, which closes the microwave cavity of the line and constitutes the short-circuit planes 42a, 42b.
  • This upper blade 4 is also thick enough to present a recess 41 suitable for containing the integrated circuit to be connected to the transmission line.
  • the different blades 1, 2, 3, 4 as well as the waveguides 100 are secured to each other for example by screws, after mounting of the substrate 23 and connections with the integrated circuit (which is also not shown), which is positioned in the cavity 41.

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  • Waveguides (AREA)
  • Waveguide Connection Structure (AREA)
EP93203621A 1992-12-29 1993-12-22 Mikrowellenanordnung mit mindestens einem Übergang zwischen einer auf einem Substrat integrierten Übertragungsleitung und einem Hohlleiter Expired - Lifetime EP0605046B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9215837 1992-12-29
FR9215837A FR2700066A1 (fr) 1992-12-29 1992-12-29 Dispositif hyperfréquences comprenant au moins une transition entre une ligne de transmission intégrée sur un substrat et un guide d'onde.

Publications (2)

Publication Number Publication Date
EP0605046A1 true EP0605046A1 (de) 1994-07-06
EP0605046B1 EP0605046B1 (de) 1998-03-11

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EP93203621A Expired - Lifetime EP0605046B1 (de) 1992-12-29 1993-12-22 Mikrowellenanordnung mit mindestens einem Übergang zwischen einer auf einem Substrat integrierten Übertragungsleitung und einem Hohlleiter

Country Status (5)

Country Link
US (1) US5414394A (de)
EP (1) EP0605046B1 (de)
JP (1) JPH06283914A (de)
DE (1) DE69317390T2 (de)
FR (1) FR2700066A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10616996B2 (en) 2017-12-04 2020-04-07 Vega Grieshaber Kg Printed circuit board for a radar level measurement device with waveguide coupling

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726664A (en) * 1994-05-23 1998-03-10 Hughes Electronics End launched microstrip or stripline to waveguide transition with cavity backed slot fed by T-shaped microstrip line or stripline usable in a missile
US5724049A (en) * 1994-05-23 1998-03-03 Hughes Electronics End launched microstrip or stripline to waveguide transition with cavity backed slot fed by offset microstrip line usable in a missile
DE19505860A1 (de) * 1995-02-21 1996-08-22 Philips Patentverwaltung Konverter
US5539361A (en) * 1995-05-31 1996-07-23 The United States Of America As Represented By The Secretary Of The Air Force Electromagnetic wave transfer
JPH1065038A (ja) * 1996-08-22 1998-03-06 Mitsubishi Electric Corp ミリ波デバイス用パッケージ
EP0874415B1 (de) * 1997-04-25 2006-08-23 Kyocera Corporation Hochfrequenzbaugruppe
EP0985243B1 (de) * 1997-05-26 2009-03-11 Telefonaktiebolaget LM Ericsson (publ) Vorrichtung zur mikrowellenübertragung
US5929728A (en) * 1997-06-25 1999-07-27 Hewlett-Packard Company Imbedded waveguide structures for a microwave circuit package
US5912598A (en) * 1997-07-01 1999-06-15 Trw Inc. Waveguide-to-microstrip transition for mmwave and MMIC applications
US6100853A (en) * 1997-09-10 2000-08-08 Hughes Electronics Corporation Receiver/transmitter system including a planar waveguide-to-stripline adapter
US5982250A (en) * 1997-11-26 1999-11-09 Twr Inc. Millimeter-wave LTCC package
JP3129288B2 (ja) * 1998-05-28 2001-01-29 日本電気株式会社 マイクロ波集積回路マルチチップモジュール、マイクロ波集積回路マルチチップモジュールの実装構造
US6040739A (en) * 1998-09-02 2000-03-21 Trw Inc. Waveguide to microstrip backshort with external spring compression
US6486748B1 (en) 1999-02-24 2002-11-26 Trw Inc. Side entry E-plane probe waveguide to microstrip transition
EP1052726B1 (de) * 1999-05-05 2008-02-20 Interuniversitair Micro-Elektronica Centrum Vzw Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne
EP1063723A1 (de) * 1999-06-22 2000-12-27 Interuniversitair Micro-Elektronica Centrum Vzw Schlitzgekoppelte mikrogefertigte Hohlleiterantenne
KR20010091158A (ko) * 2000-03-13 2001-10-23 서평원 마이크로스트립 대 도파관 천이 구조 및 이 천이 구조를이용한 로컬 다중점 분산 서비스 장치
WO2002033782A1 (en) * 2000-10-18 2002-04-25 Nokia Corporation Waveguide to stripline transition
EP1346431A1 (de) 2000-12-21 2003-09-24 Paratek Microwave, Inc. Hohlleiter-mikrostreifenleiterübergang
KR100692624B1 (ko) * 2001-04-18 2007-03-13 넥스원퓨처 주식회사 도파관과 마이크로스트립 라인간의 결합 구조
US6518853B1 (en) 2001-09-06 2003-02-11 The Boeing Company Wideband compact large step circular waveguide transition apparatus
EP1367668A1 (de) * 2002-05-30 2003-12-03 Siemens Information and Communication Networks S.p.A. Breitbandiger Mikrostreifenleiter-Hohlleiterübergang auf einer Mehrschichtleiterplatte
KR100472681B1 (ko) * 2002-10-21 2005-03-10 한국전자통신연구원 도파관 구조의 패키지 및 그 제조 방법
FR2850793A1 (fr) * 2003-01-31 2004-08-06 Thomson Licensing Sa Transition entre un circuit micro-ruban et un guide d'onde et unite exterieure d'emission reception incorporant la transition
US20050151695A1 (en) * 2004-01-14 2005-07-14 Ming Chen Waveguide apparatus and method
US7276988B2 (en) * 2004-06-30 2007-10-02 Endwave Corporation Multi-substrate microstrip to waveguide transition
US7680464B2 (en) * 2004-12-30 2010-03-16 Valeo Radar Systems, Inc. Waveguide—printed wiring board (PWB) interconnection
US7603097B2 (en) * 2004-12-30 2009-10-13 Valeo Radar Systems, Inc. Vehicle radar sensor assembly
WO2006098054A1 (ja) * 2005-03-16 2006-09-21 Hitachi Chemical Co., Ltd. 平面アンテナモジュール、トリプレート型平面アレーアンテナ、およびトリプレート線路－導波管変換器
JP4511406B2 (ja) * 2005-03-31 2010-07-28 株式会社デンソー 空中線装置
JP4395103B2 (ja) * 2005-06-06 2010-01-06 富士通株式会社 導波路基板および高周波回路モジュール
US7420436B2 (en) * 2006-03-14 2008-09-02 Northrop Grumman Corporation Transmission line to waveguide transition having a widened transmission with a window at the widened end
JP4648292B2 (ja) * 2006-11-30 2011-03-09 日立オートモティブシステムズ株式会社 ミリ波帯送受信機及びそれを用いた車載レーダ
JP4365852B2 (ja) * 2006-11-30 2009-11-18 株式会社日立製作所 導波管構造
WO2008068825A1 (ja) * 2006-12-01 2008-06-12 Mitsubishi Electric Corporation 同軸線路スロットアレーアンテナとその製造方法
JP5653741B2 (ja) 2010-12-15 2015-01-14 タカタ株式会社 バックルおよびこれを備えたシートベルト装置
US9270005B2 (en) 2011-02-21 2016-02-23 Siklu Communication ltd. Laminate structures having a hole surrounding a probe for propagating millimeter waves
US8680936B2 (en) * 2011-11-18 2014-03-25 Delphi Technologies, Inc. Surface mountable microwave signal transition block for microstrip to perpendicular waveguide transition
WO2013190437A1 (en) * 2012-06-20 2013-12-27 Siklu Communication ltd. Systems and methods for millimeter-wave laminate structures
US9653796B2 (en) 2013-12-16 2017-05-16 Valeo Radar Systems, Inc. Structure and technique for antenna decoupling in a vehicle mounted sensor
JP6219156B2 (ja) * 2013-12-18 2017-10-25 日本ピラー工業株式会社 アンテナ用ユニット
JP6105496B2 (ja) * 2014-01-21 2017-03-29 株式会社デンソー 一括積層基板
US9488719B2 (en) * 2014-05-30 2016-11-08 Toyota Motor Engineering & Manufacturing North America, Inc. Automotive radar sub-system packaging for robustness
US9553057B1 (en) * 2014-09-30 2017-01-24 Hrl Laboratories, Llc E-plane probe with stepped surface profile for high-frequency
JP6369394B2 (ja) * 2015-06-08 2018-08-08 住友電気工業株式会社 伝送線路−導波管変換器
WO2017167916A1 (en) * 2016-03-31 2017-10-05 Huber+Suhner Ag Adapter plate and antenna assembly
US10468736B2 (en) * 2017-02-08 2019-11-05 Aptiv Technologies Limited Radar assembly with ultra wide band waveguide to substrate integrated waveguide transition
US10476967B2 (en) 2017-11-14 2019-11-12 Ford Global Technologies, Llc Vehicle cabin mobile device detection system
US10469589B2 (en) 2017-11-14 2019-11-05 Ford Global Technologies, Llc Vehicle cabin mobile device sensor system
US11404758B2 (en) * 2018-05-04 2022-08-02 Whirlpool Corporation In line e-probe waveguide transition
CN113169434B (zh) * 2018-12-04 2022-07-01 三菱电机株式会社 波导管平面线路转换器和高频模块
CN112397865B (zh) * 2020-10-23 2022-05-10 中国电子科技集团公司第二十九研究所 一种实现3mm波导端口气密的微带探针过渡结构
US11757166B2 (en) 2020-11-10 2023-09-12 Aptiv Technologies Limited Surface-mount waveguide for vertical transitions of a printed circuit board
US11616306B2 (en) 2021-03-22 2023-03-28 Aptiv Technologies Limited Apparatus, method and system comprising an air waveguide antenna having a single layer material with air channels therein which is interfaced with a circuit board
CN115395196B (zh) * 2022-07-04 2023-06-23 电子科技大学 一种基于悬置微带线的改进匹配结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111104A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Transducer
JPS60247302A (ja) * 1984-05-22 1985-12-07 Shimada Phys & Chem Ind Co Ltd 高電力形同軸導波管変換器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409566A (en) * 1981-10-21 1983-10-11 Rca Corporation Coaxial line to waveguide coupler
US4453142A (en) * 1981-11-02 1984-06-05 Motorola Inc. Microstrip to waveguide transition
US4716386A (en) * 1986-06-10 1987-12-29 Canadian Marconi Company Waveguide to stripline transition
US5235300A (en) * 1992-03-16 1993-08-10 Trw Inc. Millimeter module package

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111104A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Transducer
JPS60247302A (ja) * 1984-05-22 1985-12-07 Shimada Phys & Chem Ind Co Ltd 高電力形同軸導波管変換器

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
1988 IEEE MTT INTERNATIONAL MICROWAVE SYMPOSIUM - DIGEST,Vol.1;25-27 Mai 1988, New York,US;IEEE,New York,US,1988 Y.-C. SHIH et al.:"Waveguide-to- *
IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM;July 20-24,1992, Chicago,US;IEEE,New York,US,1992 Digest,Vol. 4; pages 2122-2125 *
PATENT ABSTRACTS OF JAPAN vol. 10, no. 108 (E - 398)<2165> 23 April 1986 (1986-04-23) *
PATENT ABSTRACTS OF JAPAN vol. 6, no. 205 (E - 136)<1083> 16 October 1982 (1982-10-16) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10616996B2 (en) 2017-12-04 2020-04-07 Vega Grieshaber Kg Printed circuit board for a radar level measurement device with waveguide coupling

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US5414394A (en) 1995-05-09
FR2700066A1 (fr) 1994-07-01
EP0605046B1 (de) 1998-03-11
JPH06283914A (ja) 1994-10-07
DE69317390T2 (de) 1998-09-03
DE69317390D1 (de) 1998-04-16

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