EP1052726B1 - Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne - Google Patents

Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne Download PDF

Info

Publication number
EP1052726B1
EP1052726B1 EP20000870097 EP00870097A EP1052726B1 EP 1052726 B1 EP1052726 B1 EP 1052726B1 EP 20000870097 EP20000870097 EP 20000870097 EP 00870097 A EP00870097 A EP 00870097A EP 1052726 B1 EP1052726 B1 EP 1052726B1
Authority
EP
European Patent Office
Prior art keywords
antenna
substrate
cavity
layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP20000870097
Other languages
English (en)
French (fr)
Other versions
EP1052726A1 (de
Inventor
Hocine Ziad
Ezzeldin Soliman
Guy Vandenbosch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP99870129A external-priority patent/EP1063723A1/de
Application filed by Katholieke Universiteit Leuven, Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Katholieke Universiteit Leuven
Priority to EP20000870097 priority Critical patent/EP1052726B1/de
Publication of EP1052726A1 publication Critical patent/EP1052726A1/de
Application granted granted Critical
Publication of EP1052726B1 publication Critical patent/EP1052726B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/06—Waveguide mouths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H01Q13/18—Resonant slot antennas the slot being backed by, or formed in boundary wall of, a resonant cavity ; Open cavity antennas

Definitions

  • the present invention relates to a method for manufacturing slot-coupled micromachined waveguide antenna.
  • Microwave antennas are usually to emit radiation in a medium such as air, ..., with a sufficient precision of directivity and are to be sufficiently small.
  • State of the art millimetre wave antennas are, thanks to the antennas scaling laws, inherently small enough for being arrangeable in highly directive arrays. The larger the number of radiating elements in the array, the more directive the antenna can be. If the directivity of one element is already high, the number of elements required for reaching a target directivity will be smaller, and therefore the antenna itself can be smaller.
  • the state of the art directive antennas in the millimetre wave range are planar antennas, with patch antennas being the most widely used.
  • planar antennas are very attractive for use within compact communication systems, (telecommunication, WLAN) owing to their simple integration with driving electronics and microwave circuits. However, they suffer from two serious disadvantages which are the limited bandwidth and the substrate losses.
  • Millimetre wave antennas furthermore find applications within the automotive market as a FLAR (Forward Looking Automobile Radar) or as automobile sensors.
  • FLAR Forward Looking Automobile Radar
  • millimetre wave portion of the spectrum is used for at least two important applications requiring small and directive antennas:
  • Automotive applications are considered one of the two most important applications [ H.H. Gol, "Commercial Applications of Millimetre Waves. History, Present Status, and Future Trends", IEEE Transactions on Microwave Theory and Techniques. Vol.43. Nr 7, July 1995, pp 1639-1653 .] in the millimetre wave communication range, the second being the short haul transmission links for PCN installations.
  • a FLAR is a radar used for measuring the relative velocity between two vehicles in a lane, and the distance between these vehicles, in order to issue warnings to the vehicle drivers.
  • the FLAR consists of different parts:
  • the FLARs are to be designed for operation at different frequencies, depending on the geographic area:
  • Radar systems for the automobile have been studied for more than 20 years by major car companies in collaboration with RF companies and chips manufacturers.
  • An antenna for an Automobile anticollision radar (77 GHz) system needs to fulfil the requirements of scanning the road ahead.
  • radar techniques are used requiring antennas which are:
  • the radar size can be reduced by the following measures
  • An aim of the present invention is to provide a method for manufacturing a slot-coupled micromachined waveguide antenna for millimetre wave communication device applications.
  • These antennas are millimetre wave antennas emitting radiation, having high directivity and high efficiency.
  • the antennas can be used for instance for telecommunications and for automotive radars.
  • the present invention relates to a method according to claim 1.
  • This method can further comprise the step of filling said cavity with a polymer, preferably BCB, the substrate being an MCM-D wafer.
  • the substrate can comprise Si and the first insulating layer can comprise a Si-oxide layer and a polymer layer, said polymer preferably comprising BCB.
  • Figures 1a to 1d are representing two distinct embodiments of the cavity of the antenna. Parameter values are given in Table 1 and Table 2.
  • Figure 2a to 2f illustrate a method of fabricating the device according to the present invention.
  • Figure 3 shows a radar device
  • Preferred embodiments of the present invention which are millimetre wave antenna micromachined on an MCM-D silicon platform are described hereunder. It is designed for radiating above 20 GHz.
  • the radiating aperture of this antenna is a micromachined waveguide.
  • the aperture is etched in the bulk of the silicon substrate.
  • the cross section of the micromachined waveguide can take a rectangular ( Figs. 1a and 1b ) or a circular ( Figs. 1c and 1d ) cross section or a cross section of any geometry.
  • the cavity may be filled with a low loss dielectric, material such as a polymer material (BCB), to shrink the antenna dimensions.
  • BCB polymer material
  • the proposed antenna's are fed by a coplanar waveguide (CPW) realised on the side of the substrate of the antenna facing the MCM-D substrate but separated therefrom by a dielectric material.
  • CPW coplanar waveguide
  • the electromagnetic coupling from the feeding CPW to the antenna is achieved through a slot etched in the metal base of the aperture waveguide.
  • the coupling slot has the same shape as the waveguide cross section.
  • Figs. 1a and 1b show a rectangular opening (slot) (37a) in the base of a micromachined rectangular waveguide (33a) while Figs. 1c et 1b show a circular opening (slot) (37b) in the base of a micromachined circular waveguide (33b).
  • the feeding CPW (23) are also shown on these Figures.
  • Several radiating ends of the feeding CPW are used, such as open, short, capacitive, and inductive ends.
  • the frequency of the signal radiated by the antenna is the frequency of the signal propagating in the CPW waveguide, and fed to the antenna by electromagnetic coupling through the slot.
  • the radiated wavelength is basically not set by the waveguide dimensions.
  • the waveguide dimensions actually define the cut-off frequency of the respective modes which could be excited by a fed signal of given frequency.
  • a cylindrical aperture antenna is described on Fig. 1c .
  • the walls of the cylinder are sputter coated with TiW/Au.
  • An opening is made in this metal in the bottom of the cylinder, in order to feed (excite) the antenna located on chip's backside through a microstrip tine leaving the oscillator, and located on the frontside of the substrate.
  • the hole is either
  • a rectangular aperture antenna can be manufactured similarly.
  • the process of fabrication of an antenna according to the present invention starts with a double side polished low resistivity silicon wafer (antenna substrate) (31), wherein the following steps are performed:

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Waveguide Aerials (AREA)

Claims (3)

  1. verfahren zur Herstellung einer schlitzgekoppelten mikrobearbeiteten Wellenleiterantenne zum Aussenden und/oder Empfangen eines Signals im Millimeterwellenbereich, dadurch gekennzeichnet, dass das Verfahren folgende Schritte umfasst:
    a) Abscheiden einer ersten Isolierschicht (21, 26) auf einer ersten Seite eines planaren Substrats (31) mit zwei gegenüberliegenden Seiten und einer Dicke, wobei die erste Isolierschicht eine Ätzstoppfunktion aufweist;
    b) Abscheiden einer ersten metallischen Schicht (25) auf der ersten Isolierschicht (21),
    c) Ätzen eines Hohlraums (27) mit vorgegebenen Abmessungen in das Substrat (31) auf dessen zweiter Seite, wobei das Ätzen aufhört, sobald die Übergangssstelle zwischen dem Substrat (31) und der Isolierschicht (21, 26) erreicht ist, so dass die Tiefe des Hohlraums (27) der Dicke des Substrats (31) entspricht,
    d) Abscheiden einer zweiten metallischen Schicht (33), welche die zweite Seite des Substrats (31), die den Hohlraum (27) enthält, bedeckt, und
    e) Entfernen eines Teils von der zweiten metallischen Schicht am Boden des Hohlraums, um eine Öffnung (37) in der zweiten metallischen Schicht (33) am Boden des Hohlraums zu erzeugen, wobei die erste metallische Schicht (25) die Öffnung (37) überlagert, wodurch eine Schlitzkopplung definiert wird.
  2. Verfahren nach Anspruch 1, das des Weiteren den zusätzlichen Schritt umfasst, den Hohlraum mit einem Polymermaterial (41), vorzugsweise einem Dielektrikum, das BCB (Benzocyclobuten) umfasst, zu füllen.
  3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Substrat Si umfasst und die erste Isolierschicht eine Si-Oxidschicht (26) und eine Polymerschicht (21) umfasst, wobei die Polymerschicht vorzugsweise BCB (Benzocyclobuten) umfasst.
EP20000870097 1999-05-05 2000-05-05 Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne Expired - Lifetime EP1052726B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP20000870097 EP1052726B1 (de) 1999-05-05 2000-05-05 Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP99870096 1999-05-05
EP99870096 1999-05-05
EP99870129A EP1063723A1 (de) 1999-06-22 1999-06-22 Schlitzgekoppelte mikrogefertigte Hohlleiterantenne
EP99870129 1999-06-22
EP20000870097 EP1052726B1 (de) 1999-05-05 2000-05-05 Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne

Publications (2)

Publication Number Publication Date
EP1052726A1 EP1052726A1 (de) 2000-11-15
EP1052726B1 true EP1052726B1 (de) 2008-02-20

Family

ID=27223753

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20000870097 Expired - Lifetime EP1052726B1 (de) 1999-05-05 2000-05-05 Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne

Country Status (1)

Country Link
EP (1) EP1052726B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110401022A (zh) * 2019-08-02 2019-11-01 电子科技大学 基于mems工艺的毫米波高增益缝隙阵列天线

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1784063A1 (de) * 2005-11-08 2007-05-09 Alcatel Lucent Leiterplatte mit darauf montierten mikroelektronischen Komponenten und Verfahren zur Herstellung einer solchen Leiterplatte
US9496593B2 (en) 2011-02-21 2016-11-15 Siklu Communication ltd. Enhancing operation of laminate waveguide structures using an electrically conductive fence
US9270005B2 (en) 2011-02-21 2016-02-23 Siklu Communication ltd. Laminate structures having a hole surrounding a probe for propagating millimeter waves

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4208058C2 (de) * 1992-03-13 1998-02-26 Daimler Benz Aerospace Ag Hohlleiter/Mikrostreifenleitungs-Übergang
FR2700066A1 (fr) * 1992-12-29 1994-07-01 Philips Electronique Lab Dispositif hyperfréquences comprenant au moins une transition entre une ligne de transmission intégrée sur un substrat et un guide d'onde.
US5724049A (en) * 1994-05-23 1998-03-03 Hughes Electronics End launched microstrip or stripline to waveguide transition with cavity backed slot fed by offset microstrip line usable in a missile
FI98105C (fi) * 1995-03-06 1997-04-10 Valtion Teknillinen Mikroliuska-aaltoputkisiirtymä
WO1998047198A2 (en) * 1997-03-25 1998-10-22 The University Of Virginia Patent Foundation A preferential crystal etching technique for the fabrication of millimeter and submillimeter wavelength horn antennas
JPH11251829A (ja) * 1998-02-27 1999-09-17 Kyocera Corp スロットアンテナ及びそれを具備する配線基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110401022A (zh) * 2019-08-02 2019-11-01 电子科技大学 基于mems工艺的毫米波高增益缝隙阵列天线

Also Published As

Publication number Publication date
EP1052726A1 (de) 2000-11-15

Similar Documents

Publication Publication Date Title
US6191740B1 (en) Slot fed multi-band antenna
US7545339B2 (en) Planar antenna apparatus for ultra wide band applications
CN101743665B (zh) 可重构天线的改进及与其相关的改进
EP0720252B1 (de) Miniatur-Streifenleitungsantenne mit mehreren Zweigen
US5381157A (en) Monolithic microwave integrated circuit receiving device having a space between antenna element and substrate
US5982250A (en) Millimeter-wave LTCC package
EP1398848B1 (de) Geschichtete Aperturantenne und damit ausgestattete mehrschichtige Leiterplatte
WO2009023551A1 (en) Hybrid integrated mems reconfigurable antenna array (himra)
EP1041668A2 (de) Hohlraumresonator zur Verminderung des Phasenrauschen eines spannungsgesteuerten Oszillators
JP2013521508A (ja) レーダーシステム及びその製造方法
Van Caekenberghe RF MEMS on the radar
EP0296838B1 (de) Monolithischer Mikrowellen-Sender/Empfänger
US6509874B1 (en) Reactive matching for waveguide-slot-microstrip transitions
EP1052726B1 (de) Herstellungsverfahren für eine schlitzgekoppelte mikrogefertigte Hohlleiterantenne
EP1041667B1 (de) Hohlraumresonator zur Verminderung des Phasenrauschen eines spannungsgesteuerten Oszillators und Verfahren zu dessen Herstellung
US6144264A (en) High Q-factor oscillator circuit
JP2001156536A (ja) スロットアレイアンテナ、導波管製造法および回路形成方法
US20090040111A1 (en) Antenna System for a Radar Sensor
Svedin et al. A micromachined 94 GHz dielectric resonator antenna for focal plane array applications
JPH10261917A (ja) ミリ波送受信装置
EP1063723A1 (de) Schlitzgekoppelte mikrogefertigte Hohlleiterantenne
Ellis et al. A wideband CPW-fed microstrip antenna at millimeter-wave frequencies
Keshtkaran et al. 60 GHz capacitively probe-fed patch arrays with suspended elements
Peng et al. A 1-bit 110GHz MEMS-based Beam-steerable Reflectarray
Soni et al. Performance improvement of aperture coupled MSA through Si micromachining

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

17P Request for examination filed

Effective date: 20001218

AKX Designation fees paid

Free format text: AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

17Q First examination report despatched

Effective date: 20050330

17Q First examination report despatched

Effective date: 20050330

RTI1 Title (correction)

Free format text: MANUFACTURING METHOD FOR A SLOT COUPLED MICROMACHINED WAVEGUIDE ANTENNA

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: KU LEUVEN RESEARCH & DEVELOPMENT

Owner name: INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 60038073

Country of ref document: DE

Date of ref document: 20080403

Kind code of ref document: P

NLT2 Nl: modifications (of names), taken from the european patent patent bulletin

Owner name: INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW EN

Effective date: 20080319

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080531

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

ET Fr: translation filed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080520

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080721

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20080531

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

26N No opposition filed

Effective date: 20081121

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20080531

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20080531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20080505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080220

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20080505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20080521

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20130424

Year of fee payment: 14

Ref country code: DE

Payment date: 20130423

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20130626

Year of fee payment: 14

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60038073

Country of ref document: DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20140505

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60038073

Country of ref document: DE

Effective date: 20141202

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20150130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20141202

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140602

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140505