EP0432790B1 - Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs - Google Patents

Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs Download PDF

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Publication number
EP0432790B1
EP0432790B1 EP90124192A EP90124192A EP0432790B1 EP 0432790 B1 EP0432790 B1 EP 0432790B1 EP 90124192 A EP90124192 A EP 90124192A EP 90124192 A EP90124192 A EP 90124192A EP 0432790 B1 EP0432790 B1 EP 0432790B1
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European Patent Office
Prior art keywords
transistor
transistors
circuit
output buffer
output
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Expired - Lifetime
Application number
EP90124192A
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German (de)
English (en)
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EP0432790A3 (en
EP0432790A2 (fr
Inventor
Junji B-105 Shellhouse Myorenji Yano
Tsukasa Miyawaki
Masami Atoh
Masakazu Toshiba Dai-2 Wakakusa Ryo 4-6 Gotou
Masakazu Iwashita
Michio Kaji
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Toshiba Corp
Toshiba Electronic Device Solutions Corp
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Toshiba Corp
Toshiba Microelectronics Corp
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Priority to EP95113987A priority Critical patent/EP0686975A1/fr
Publication of EP0432790A2 publication Critical patent/EP0432790A2/fr
Publication of EP0432790A3 publication Critical patent/EP0432790A3/en
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Publication of EP0432790B1 publication Critical patent/EP0432790B1/fr
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/108—Wide data ports

Definitions

  • the present invention relates to a data output buffer circuit for a semiconductor integrated circuit.
  • a microprocessor, its peripheral LSI, and the like have a number of output buffers OB for outputting an address signal and a data signal.
  • a 16 bit microprocessor has, for example, 20 output buffers for outputting an address/data signal. Examples of the internal circuit of each output buffer OB are shown in Figs. 22 and 23.
  • Each output buffer OB is controlled by a timing signal T to output an address/data signal supplied from a bus BUS such as an address bus and data bus.
  • a bus BUS such as an address bus and data bus.
  • Fig. 24 shows a through current flowing in the output buffer OB shown in Fig. 22 when an output signal is inverted. As seen from Fig. 22, a through current will flow at time t1 and time t2 when an output of the output buffer is inverted from "1" to "0" and from "0" to "1", respectively.
  • the output buffers OB are all controlled by the same timing signal T, so that a through current may flow through a plurality of output buffers OB at the same time.
  • the total through current may take a value in the order of ampere.
  • a number of output buffers OB shown in Fig. 21 operate in response to the same timing signal as described above. Therefore, for example, if many of output buffers change its output level from “H” level to “L” level, a rush current flowing through the ground pin (GND) of the semiconductor integrated circuit takes a value in the order of ampere. Thus, the potential (internal power source potential) at the ground pin rises, resulting in a malfunction.
  • Fig. 25 illustrates a rise of the ground (GND) potential when all output buffers OB change its output level from "1" level to "0" level.
  • the timing signal is supplied via delay means DL to each output buffer OB in order to prevent the ground potential from rising, as seen from Fig. 26. Therefore, as shown in Fig. 27, the operation timings of the output buffers OB are shifted sequentially so that the total current flowing at any timing can be suppressed to a small value.
  • the pulse width of the timing signal T is generally the same as that of the main clock used within the LSI, so that sometimes an output pulse may not be obtained from the timing signal after it has passed through the delay means.
  • Fig. 28 shows an example of a delay means
  • Fig. 29 illustrate a normal state where a pulse is outputted
  • Fig. 30 illustrates an abnormal state where a pulse is not outputted. If a pulse indicated at "A" in Fig. 29 is applied to the input IN of the delay means shown in Fig. 28, there are obtained pulses indicated at "B” and "C” in Fig. 29 at the circuit portions shown in Fig.
  • a pulse indicated at "D” in Fig. 29 a pulse indicated at "D” in Fig. 29.
  • a delay time is represented by DT. If the input pulse width is narrowed so as to speed up the operation time as seen from Fig. 30, there is obtained no pulse as indicated at "D” in Fig. 30. In other words, if delay means are used, it is not possible to make high the operation frequency (speed) of a semiconductor integrated circuit.
  • US patent 3,631,528 discloses a low-power complementary driver comprising a first complementary inverter which is provided with a special circuit for turning an N-channel device off before a P-channel device is turned on and vice versa to greatly reduce power consumption during switching. This is accomplished by two additional complementary inverters having different transition voltages connected between the input signal and the gates of the N- and P-channel devices, respectively, of the first complementary inverter.
  • the present invention has been made in consideration of the above circumstances, and aims at providing a semiconductor integrated circuit capable of effectively suppressing power source noises.
  • a semiconductor integrated circuit wherein a first transistor of a first channel type and second and third transistor of a second channel type are connected in series between a pair of power source terminals, the gate of the first transistor and the gate of one of the second and third transistors are connected to an input terminal, the input terminal is connected via a delay circuit to the gate of the other of the second and third transistors, and an interconnection between the first and second transistors is connected to an output terminal, and where the series circuit of said first, second and third transistors as the only connection between said pair of power source terminals.
  • a noise eliminator circuit or a delay circuit for delaying either a leading edge or a trailing edge can be realized with a smaller number of transistors than conventional.
  • Figs. 1 to 8 are circuit diagrams and operation timing charts of first to fourth embodiments of through current block circuits wherein a through current is prevented from flowing into an output buffer OB at the time of changing an output level thereof.
  • an input data such as an address signal and a data signal from a memory cell, a register and the like is applied to an input terminal IN connected to an inverter IV1.
  • An output terminal of the inverter IV1 is connected to the gate of an output transistor Tr1 via a transistor Tr11, and to the gate of an output transistor Tr2 via a transistor Tr12.
  • the transistors Tr11 and Tr12 are connected in parallel with transistors Tr13 and Tr14.
  • the gates of the transistors Tr1 and Tr2 are pulled up and down by transistors Tr15 and Tr16, respectively.
  • the output terminal of the inverter IV1 is also connected to a delay circuit DL1.
  • the output terminal of the delay circuit DL1 is connected to the gates of the transistors Tr11 and Tr12, and to an inverter IV2 whose output terminal is connected to the gate of the transistors Tr13 to Tr16.
  • the circuit shown in Fig. 1 operates as follows. Referring to Fig. 2, when the signal at the input terminal IN falls at time t1, the level at point A1 rises because of the function of the inverter IV1. This level rise is transmitted via the transistor Tr11 to point C1 to raise the level at point C1. This level rise at point C1 causes the output transistor (P-type) Tr1 to turn off. At this time, the level at point D1 is "L" level so that the transistor Tr2 also is caused to turn off. As a result, the output level of the transistors Tr1 and Tr2 enters a high impedance state after time t1. The level rise at point A1 is transmitted to and reaches point B1 via the delay circuit DL1 at time t2.
  • the level at point D1 rises so that the transistor Tr2 turns on and the level at the output terminal P lowers to "L".
  • the above operation can be understood from curved arrows indicated near at times t1 and t2 in Fig. 2.
  • the transistor Tr2 is turned on during the delay time F of the delay circuit DL1, i.e., during the off-state or high impedance state of both the transistors Tr1 and Tr2. A through current will not flow accordingly through the transistors Tr1 and Tr2, thereby suppressing the potential change of the power source line.
  • Transistors Tr21 to Tr23 as well as transistors Tr24 to Tr26 are serially connected between a pair of power sources V CC and V SS .
  • An input terminal IN is connected to the gates of the transistors Tr21 and Tr22, and to the gates of the transistors Tr25 and Tr26.
  • the input terminal IN is also connected via a delay circuit DL2 to the gates of the transistors Tr23 and Tr24.
  • the interconnection between the transistors Tr21 and Tr22 is connected to the gate of a transistor Tr1.
  • the interconnection between the transistors Tr25 and Tr26 is connected to the gate of a transistor Tr2.
  • the circuit shown in Fig. 3 operates as follows.
  • the transistor Tr21 turns on and the level at point B2 rises.
  • This level rise at point B2 causes the output transistor Tr1 to turn off.
  • the level at point C2 is "L" level so that the output transistor Tr2 also is caused to turn off.
  • both the output transistors Tr1 and Tr2 turn off and enter a high impedance state.
  • the level fall at time t1 at the input terminal IN reaches point A2 via the delay circuit DL2 at time t2. Therefore, the level fall at point A2 causes the transistor Tr24 to turn on so that the level at point C2 rises and the transistor Tr2 turns on to lower the level at the output terminal P.
  • the transistor Tr2 since the transistor Tr2 is turned on under the condition that both the transistors Tr1 and Tr2 are in an off-state, a through current will not flow.
  • Transistors Tr31 to Tr33 as well as transistors Tr34 to Tr36 are serially connected between a pair of power sources V CC and V SS .
  • An output enable signal input terminal (OE ⁇ input terminal) is connected to the gates of the transistors Tr36 and Tr35, and via an inverter IV3 to the gates of the transistors Tr33 and Tr34.
  • the interconnection between the transistors Tr31 and Tr32 as well as the interconnection between the transistors Tr34 and Tr35 are connected to a transistor 11 of a through current block circuit 30.
  • the interconnection between the transistors Tr32 and Tr33 as well as the interconnection between the transistors Tr35 and Tr36 is connected to point A3 of the block circuit 30.
  • This block circuit 30 has the same structure as the block circuit 10 shown in Fig. 1, and like elements to those shown in Fig. 1 are represented by using identical reference symbols.
  • the circuit shown in Fig. 5 operates as follows. When the level at the input terminal IN falls at time t1, the transistor Tr33 turns off and the transistor Tr34 turns on. When the transistor Tr33 turns off, the level at point A3 rises. When the transistor Tr34 turns on, the level at point C3 rises.
  • the following operation is similar to Fig. 1 as understood from curved arrows shown in Fig. 6. Namely, the output transistor Tr2 turns on under the condition that both the output transistors Tr1 and Tr2 are in an off-state.
  • transistors Tr21 to Tr25 as well as transistors Tr26 to Tr30 are serially connected between a pair of power sources V CC and V SS .
  • An interconnection between the transistors Tr22 and Tr23 is connected to the gate of an output transistor Tr1. This gate is pulled up by a transistor Tr31.
  • An interconnection between the transistors Tr28 and Tr29 is connected to the gate of an output transistor Tr2. This gate is pulled down by a transistor Tr32.
  • An output enable signal input terminal (OE ⁇ input terminal) is connected to the gates of the transistors Tr21, Tr26 and Tr32, and via an inverter IV4 to the gates of the transistors Tr25, Tr31 and Tr30.
  • An input terminal IN is connected to the gates of the transistors Tr22, Tr23, Tr28 and Tr29, and via a delay circuit DL3 to the transistors Tr24 and Tr27.
  • the circuit shown in Fig. 7 operates as follows.
  • the transistor Tr22 turns on and the level at point B4 rises.
  • This level rise at point B4 causes the transistor Tr1 to turn off.
  • the level at point C4 is "L" level so that the transistor Tr2 also is caused to turn off.
  • both the output transistors Tr1 and Tr2 turn off and enter a high impedance state.
  • the level fall at time t1 reaches point A4 via the delay circuit DL3 at time t2 to lower the level at point A4. Therefore, the level fall at point A4 causes the transistor Tr27 to turn on so that the level at point C4 rises.
  • the transistor Tr2 With the level rise at point C4, the transistor Tr2 turns on to lower the level at the output terminal P. As above, since the transistor Tr2 is turned on under the condition that both the transistors Tr1 and Tr2 are in an off-state and in a high impedance state, a through current will now flow.
  • Fig. 8A shows a device having a plurality of pairs of the through current block circuits 10 (20, 30) and the output buffer (Tr1, Tr2). A plurality of data are outputted from terminals P1 to Pn at the same time.
  • the first circuit constructed of a combination of the delay circuit DL2 and three transistors Tr21 to Tr23 or the second circuit constructed of a combination of the delay circuit DL2 and three transistors Tr24 to Tr26 may be used as a circuit for delaying the leading edge or trailing edge of an input signal or as a noise eliminator circuit for eliminating noises superposed upon an input signal.
  • the first circuit is shown in Fig. 11, and its equivalent circuit is shown in Fig. 9. The operation of this circuit is illustrated in Figs. 12 to 14.
  • Fig. 12 illustrates a noise eliminating operation.
  • a noise N is superposed on a signal at the input terminal IN.
  • This noise N is transmitted to the transistor Tr21 so that its output becomes a high impedance state (tri-state).
  • This first circuit processes an internal signal so that its load is negligibly small, and the noise period (1) is short. Therefore, an output signal at the output terminal C takes a previous state of H level.
  • the noise N is delayed by the delay circuit DL2 and reaches point B.
  • the transistor Tr23 is off at this time so that the noise will not appear at the output terminal C.
  • Figs. 13 and 14 illustrate a trailing edge delay operation. Although the high impedance state is retained at the output terminal C during the periods (2) and (3) respectively shown in Figs. 13 and 14, there is no problem during these periods (2) and (3) because of the same reason described with the period (1).
  • the second circuit is shown in Fig. 17, and its equivalent circuit is shown in Fig. 15. The operation of this circuit is illustrated in Figs. 18 to 20.
  • Fig. 18 illustrates a noise eliminating operation.
  • a noise N is superposed on a signal at the input terminal IN.
  • This noise N is transmitted to the transistor Tr26 so that its output becomes a high impedance state (tri-state).
  • This second circuit processes an internal signal so that its load is negligibly small, and the noise period (4) is short. Therefore, an output signal at the output terminal C takes a previous state of L level.
  • the noise N is delayed by the delay circuit DL2 and reaches point B.
  • the transistor Tr24 is off at this time so that the noise will not appear at the output terminal C.
  • Figs. 19 and 20 illustrate a trailing edge delay operation. Although the high impedance state is retained at the output terminal C during the periods (5) and (6) respectively shown in Figs. 19 and 20, there is no problem during these periods (5) and (6) because of the same reason described with the period (4).
  • the number of transistors is reduced by one as compared with conventional circuits.
  • the equivalent circuit shown in Fig. 9 of the circuit of Fig. 11 has been realized heretofore generally by the circuit shown in Fig. 10 which requires eight transistors Tr51 to Tr58.
  • the embodiment circuit shown in Fig. 11 requires seven transistors Tr21 to Tr23, and Tr20a to Tr20d.
  • the conventional circuit shown in Fig. 16 requires eight transistors Tr61 to Tr68
  • the embodiment circuit shown in Fig. 17 requires seven transistors Tr24 to Tr26, and Tr20e to Tr20h.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
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  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
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Claims (8)

  1. Circuit de tampon de sortie de données pour un circuit intégré à semiconducteur dans lequel un premier transistor (Tr21 ; Tr26) d'un premier type de canal et des second et troisième transistors (Tr22 ; Tr25 et Tr23 ; Tr24) d'un second type de canal sont connectés en série entre une paire de bornes de source d'alimentation (VCC, VSS), la grille dudit premier transistor (Tr21 ; Tr26) et la grille de l'un desdits second et troisième transistors sont connectées à une borne d'entrée, ladite borne d'entrée est connectée via un circuit de retard (DL2) à la grille de l'autre desdits second et troisième transistors et une interconnexion entre lesdits premier et second transistors est connectée à une borne de sortie, le circuit série constitué par lesdits premier, second et troisième transistors (Tr21 ; Tr26 ; Tr22 ; Tr25 ; Tr23 ; Tr24) étant la seule connexion entre ladite paire de bornes de source d'alimentation (VCC, VSS).
  2. Circuit de tampon de sortie de données pour un circuit intégré à semiconducteur selon la revendication 1, dans lequel ledit premier transistor (Tr21), ledit second transistor (Tr22) et ledit troisième transistor (Tr23) forment un premier groupe de transistors ; et
    dans lequel un second groupe de transistors est formé, lequel est constitué par des quatrième (Tr24) et cinquième (Tr25) transistors d'un type de canal opposé à celui desdits second et troisième transistors (Tr22, Tr23) et par un sixième transistor (Tr26) d'un type de canal opposé à celui dudit premier transistor ; et dans lequel
    ladite borne d'entrée est connectée aux grilles dudit premier transistor (Tr21), dudit second transistor (Tr22), dudit cinquième transistor (Tr25) et dudit sixième transistor (Tr26) et via ledit circuit de retard (DL2), aux grilles dudit troisième transistor (Tr23) et dudit quatrième transistor (Tr24), l'interconnexion entre ledit premier transistor (Tr21) et ledit second transistor (Tr22) est connectée à la borne de commande d'un premier moyen de commutation (Tr1) et l'interconnexion entre ledit cinquième transistor (Tr25) et ledit sixième transistor (Tr26) est connectée à la borne de commande d'un second moyen de commutation (Tr2), et dans lequel
    lesdits premier et second moyens de commutation (Tr1, Tr2) sont connectés série entre deux bornes de source d'alimentation haute et basse (VCC, VSS), et dans lequel
    une borne de sortie (P) est connectée à une interconnexion entre lesdits premier et second moyens de commutation (Tr1, Tr2).
  3. Circuit de tampon de sortie de données selon la revendication 2, dans lequel lesdits premier et second moyens de commutation (Tr1, Tr2) sont respectivement un premier transistor de sortie à canal P et un second transistor de sortie à canal N.
  4. Circuit de tampon de sortie de données pour un circuit intégré à semiconducteur selon la revendication 2 ou 3, caractérisé en ce qu'il comporte une pluralité de circuits de tampon de sortie, chaque circuit de tampon de sortie fonctionnant pour émettre en sortie un jeu de données de sortie pour chacun d'une pluralité de jeux de données d'entrée vers l'extérieur en même temps.
  5. Circuit de tampon de sortie de données selon la revendication 1, dans lequel ledit premier transistor (Tr21) est un transistor à canal P et lesdits second et troisième transistors (Tr22, Tr23) sont chacun un transistor à canal N.
  6. Circuit de tampon de sortie de données selon la revendication 5, dans lequel ledit premier transistor (Tr21) est connecté à la borne de côté de tension haute de ladite paire de bornes de source d'alimentation (VCC, VSS) et ledit troisième transistor (Tr23) est connecté à la borne de côté de tension basse de ladite paire de bornes de source d'alimentation.
  7. Circuit de tampon de sortie de données selon la revendication 1, dans lequel ledit premier transistor (Tr6) est un transistor à canal N et lesdits second et troisième transistors (Tr23, Tr24) sont chacun des transistors à canal P.
  8. Circuit de tampon de sortie de données selon la revendication 7, dans lequel ledit premier transistor (Tr26) est connecté à la borne de côté de tension basse (VSS) de ladite paire de bornes de source d'alimentation et ledit troisième transistor (Tr24) est connecté à la borne de côté de tension haute (VCC) de ladite paire de bornes de source d'alimentation.
EP90124192A 1989-12-14 1990-12-14 Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs Expired - Lifetime EP0432790B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP95113987A EP0686975A1 (fr) 1989-12-14 1990-12-14 Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP324754/89 1989-12-14
JP1324754A JPH03185921A (ja) 1989-12-14 1989-12-14 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP95113987.2 Division-Into 1990-12-14

Publications (3)

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EP0432790A2 EP0432790A2 (fr) 1991-06-19
EP0432790A3 EP0432790A3 (en) 1992-09-30
EP0432790B1 true EP0432790B1 (fr) 1996-10-16

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EP95113987A Withdrawn EP0686975A1 (fr) 1989-12-14 1990-12-14 Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs
EP90124192A Expired - Lifetime EP0432790B1 (fr) 1989-12-14 1990-12-14 Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs

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EP95113987A Withdrawn EP0686975A1 (fr) 1989-12-14 1990-12-14 Circuit de tampon de sortie de données pour circuit intégré à semi-conducteurs

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US (1) US5194764A (fr)
EP (2) EP0686975A1 (fr)
JP (1) JPH03185921A (fr)
KR (1) KR950001087B1 (fr)
DE (1) DE69028903D1 (fr)

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Also Published As

Publication number Publication date
US5194764A (en) 1993-03-16
JPH03185921A (ja) 1991-08-13
KR910013535A (ko) 1991-08-08
DE69028903D1 (de) 1996-11-21
KR950001087B1 (ko) 1995-02-08
EP0686975A1 (fr) 1995-12-13
EP0432790A3 (en) 1992-09-30
EP0432790A2 (fr) 1991-06-19

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