EP0399072A1 - Bijou - Google Patents

Bijou Download PDF

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Publication number
EP0399072A1
EP0399072A1 EP89109305A EP89109305A EP0399072A1 EP 0399072 A1 EP0399072 A1 EP 0399072A1 EP 89109305 A EP89109305 A EP 89109305A EP 89109305 A EP89109305 A EP 89109305A EP 0399072 A1 EP0399072 A1 EP 0399072A1
Authority
EP
European Patent Office
Prior art keywords
piece
jewelry
layer
metal
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89109305A
Other languages
German (de)
English (en)
Other versions
EP0399072B1 (fr
Inventor
Jürgen Bock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bock and Schupp GmbH and Co KG Zifferblatter Fabrik
Original Assignee
Bock and Schupp GmbH and Co KG Zifferblatter Fabrik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bock and Schupp GmbH and Co KG Zifferblatter Fabrik filed Critical Bock and Schupp GmbH and Co KG Zifferblatter Fabrik
Priority to EP89109305A priority Critical patent/EP0399072B1/fr
Priority to ES198989109305T priority patent/ES2036295T3/es
Priority to DE8989109305T priority patent/DE58902973D1/de
Priority to AT89109305T priority patent/ATE83134T1/de
Priority to US07/367,884 priority patent/US5087528A/en
Publication of EP0399072A1 publication Critical patent/EP0399072A1/fr
Application granted granted Critical
Publication of EP0399072B1 publication Critical patent/EP0399072B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • A44C27/005—Coating layers for jewellery
    • A44C27/006—Metallic coatings
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery

Definitions

  • the invention relates to a disk-shaped metallic piece of jewelry (part of a piece of jewelry), also brand, medal, dial, with one or both sides processing.
  • Such metallic disc-shaped pieces of jewelry belong to the permanent holdings of the jewelry industry. They are worn as a single piece of jewelry, for example as earrings, or form an inventory part of a jewelry creation, for example with necklaces or bracelets.
  • the surface of these metallic disc-shaped pieces of jewelry is processed in many ways, the platelets either being flat, mirror-polished or structured on their surface.
  • the material for these plates ranges from aluminum to precious metals.
  • the noble metals, especially silver and gold, are generally left in their metal color. Anodizing in a wide variety of colors has prevailed for aluminum. The same applies to the electroplating of titanium.
  • this is provided by a disc-shaped, flat or structured single crystal which is provided on one or both sides with one or more chemically different types of in turn uniform or structured layers, each with a layer thickness of 0.01 my to 2 my.
  • single crystals seems to contradict the first point of the list above - value for money.
  • single crystals not only have special properties that facilitate the further treatment of these disc-shaped metallic pieces of jewelry and thus make them cheaper, but they are now also required in very large quantities and are therefore inexpensive to produce on an industrial scale.
  • polycrystals or polycrystals an is crystal a crystalline body, the basic cells of which are almost parallel and which have no grain boundaries. This property can be exploited in the manufacture of such jewelry by placing the plane of the disk-shaped jewelry in the crystal plane. Therefore, striking light is always reflected in the desired way with the same inclination, while in the multi-crystal each individual crystal (grain) reflects the light in a different direction.
  • Desired reflecting surfaces can therefore be achieved with such a single crystal much more easily and with a significantly lower surface roughness than with multi-crystals or amorphous metals.
  • roughness depths in the nano range can be achieved with such single crystals, down to about 5 nm. Even roughness depths that are significantly above this size, for example at 200 nm, are still recognized as perfectly reflective because of the effect described above .
  • the somewhat larger manufacturing effort for single crystals is therefore compensated for during further processing and also produces the desired light-optical effects which cannot be achieved with polycrystalline material.
  • both sides of such a silicon wafer can be processed without difficulty without loss of quality.
  • the chemically different layer which is to be applied to the polished single crystal according to the invention can be made of a metal or a metal compound in the manner according to the invention.
  • the metal (the metal connection) is said to be a highly complex Have refractive index, which is generally true for the hard materials already mentioned above - carbides, nitrites, borides and silicides. This also applies to semiconductors, in this case in particular silicon.
  • the metal compounds preference is again given to those compounds which give hard surfaces, in particular compounds with nitrogen, oxygen, boron and carbon.
  • the inexpensive production again plays a role, which is why oxygen or nitrogen is preferably chosen as the connecting partner in the manner according to the invention.
  • a very simple and therefore inexpensive production of this chemically different layer is achieved by directly oxidizing or nitriding the single crystal on one or both sides.
  • the penetration depth of oxygen or nitrogen can be controlled very precisely, and of course the thickness of this layer, which is decisive for the coloring.
  • this chemically different layer by the chemical vapor deposition method (CVD; LPCVD; PECVD; NPCVD). Both methods can also be used in combination, for example by oxidizing the single crystal, then structuring it preferably in the etching method and then covering it with a further layer, this further layer also being structured or can only cover certain areas of the disk-shaped single crystal.
  • the oxidation and nitriding processes in succession, for example after the oxidation partially removing the oxide layer and then nitriding the silicon layers which are now exposed. It is also entirely possible to additionally coat or print the processed disks with customary layers, or to introduce precious metal into recesses. It goes without saying that the disks can also be provided with elevations in this way.
  • a single crystal (1) made of silicon is provided with an oxidation layer (2) by oxidation.
  • This oxidation layer (2) has a thickness (a) of 0.01 my to 2 my, which results in the optical effects or the coloring of the single crystal pane set out in the description.
  • the thickness (b) of this single crystal wafer is on average about 500 my.
  • the oxidation layer (2) also causes a very high surface hardness, so that this metallic disc is also very scratch-resistant.
  • a metal layer or a metal compound layer again in the thickness (a) between 0.01 my and 2 my, is applied to the previously polished single crystal wafer (1), preferably by means of the chemical vapor deposition process.
  • this layer will also diffuse slightly into the silicon single crystal, that is to say it will firmly bond to the single crystal.
  • this applied layer (3) results in surface hardening in addition to the special color effect.
  • the silicon single crystal was first provided with a recess in the etching process and then, as shown in FIG. 1, oxidized.
  • a further metal or metal compound layer (5) is introduced into the remaining recess (4), so that this layer is different in color from the surrounding pane surface.
  • the layer thickness (a) is between 0.01 and 2 my, as is the layer thickness (c) of the applied layer.
  • the smallest possible distance (d) between the edges of the depression, due to the etching process to be used, is 2 my.
  • FIG. 4 A reversal of the process is shown in FIG. 4, where the wafer is first etched in such a way that elevations (5) remain, which can now be nitrided, for example, while the surroundings thereof oxidize becomes. Of course, this also results in different color effects that make these elevations stand out clearly.
  • this anisotropic material gives rise to further optical effects due to different angles of incidence.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Adornments (AREA)
  • Farming Of Fish And Shellfish (AREA)
  • Surface Treatment Of Glass (AREA)
EP89109305A 1989-05-23 1989-05-23 Bijou Expired - Lifetime EP0399072B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP89109305A EP0399072B1 (fr) 1989-05-23 1989-05-23 Bijou
ES198989109305T ES2036295T3 (es) 1989-05-23 1989-05-23 Pieza de joyeria.
DE8989109305T DE58902973D1 (de) 1989-05-23 1989-05-23 Schmuckstueck.
AT89109305T ATE83134T1 (de) 1989-05-23 1989-05-23 Schmuckstueck.
US07/367,884 US5087528A (en) 1989-05-23 1989-06-19 Fashion article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89109305A EP0399072B1 (fr) 1989-05-23 1989-05-23 Bijou

Publications (2)

Publication Number Publication Date
EP0399072A1 true EP0399072A1 (fr) 1990-11-28
EP0399072B1 EP0399072B1 (fr) 1992-12-09

Family

ID=8201400

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89109305A Expired - Lifetime EP0399072B1 (fr) 1989-05-23 1989-05-23 Bijou

Country Status (5)

Country Link
US (1) US5087528A (fr)
EP (1) EP0399072B1 (fr)
AT (1) ATE83134T1 (fr)
DE (1) DE58902973D1 (fr)
ES (1) ES2036295T3 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999055188A1 (fr) * 1998-04-23 1999-11-04 Winter Cvd Technik Gmbh Pierres ornementales
EP2806315A3 (fr) * 2013-05-21 2016-04-13 Master Dynamic Limited Procédé et appareil permettant de fabriquer un composant coloré pour montre

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042797A (en) * 1997-07-02 2000-03-28 Tosoh Corporation Adsorbent for ethylene, method for adsorbing and removing ethylene and method for purifying an exhaust gas
IN190683B (fr) * 1997-09-30 2003-08-16 Winter Cvd Technik Gmbh
HK1050107A2 (en) * 2002-04-02 2003-05-16 Wallace & Samuel Gallery Ltd Ornamental articles including translucent gems and method of making same
EP2543653B2 (fr) * 2011-07-04 2023-01-11 Comadur S.A. Procédé de fabrication d'une céramique mate non marquante

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412575A (en) * 1966-01-18 1968-11-26 Feldman Charles Jewelry article including thin metal and dielectric films
US4490440A (en) * 1983-08-16 1984-12-25 Reber William L High technology jewelry and fabrication of same
FR2547775A1 (fr) * 1983-06-23 1984-12-28 Metalem Sa Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1891248A (en) * 1932-02-19 1932-12-20 Stamer Morris Cameo
US3414434A (en) * 1965-06-30 1968-12-03 North American Rockwell Single crystal silicon on spinel insulators
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
US3950596A (en) * 1971-12-20 1976-04-13 Astrid Corporation, Limited Altering the appearance of corundum crystals
GB1414864A (en) * 1972-03-27 1975-11-19 Suwa Seikosha Kk Method of producing an externally visible part of a watch
JPS5532021B2 (fr) * 1974-10-26 1980-08-22
DE3590588T1 (de) * 1984-11-09 1986-10-30 Konica Corp., Tokio/Tokyo Leitendes Verbundgebilde
CH664665GA3 (fr) * 1986-06-19 1988-03-31

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412575A (en) * 1966-01-18 1968-11-26 Feldman Charles Jewelry article including thin metal and dielectric films
FR2547775A1 (fr) * 1983-06-23 1984-12-28 Metalem Sa Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore
US4490440A (en) * 1983-08-16 1984-12-25 Reber William L High technology jewelry and fabrication of same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999055188A1 (fr) * 1998-04-23 1999-11-04 Winter Cvd Technik Gmbh Pierres ornementales
EP2806315A3 (fr) * 2013-05-21 2016-04-13 Master Dynamic Limited Procédé et appareil permettant de fabriquer un composant coloré pour montre
US9625879B2 (en) 2013-05-21 2017-04-18 Master Dynamic Limited Method for fabricating a colored component for a watch

Also Published As

Publication number Publication date
ATE83134T1 (de) 1992-12-15
EP0399072B1 (fr) 1992-12-09
DE58902973D1 (de) 1993-01-21
US5087528A (en) 1992-02-11
ES2036295T3 (es) 1993-05-16

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