EP0309682A3 - Revêtement formant photoréserve résistant à la réticulation - Google Patents

Revêtement formant photoréserve résistant à la réticulation Download PDF

Info

Publication number
EP0309682A3
EP0309682A3 EP19880112223 EP88112223A EP0309682A3 EP 0309682 A3 EP0309682 A3 EP 0309682A3 EP 19880112223 EP19880112223 EP 19880112223 EP 88112223 A EP88112223 A EP 88112223A EP 0309682 A3 EP0309682 A3 EP 0309682A3
Authority
EP
European Patent Office
Prior art keywords
reticulation
photoresist
substrate
resistant
photoresist coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP19880112223
Other languages
German (de)
English (en)
Other versions
EP0309682A2 (fr
Inventor
Thomas A. Fisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Original Assignee
Shipley Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc filed Critical Shipley Co Inc
Publication of EP0309682A2 publication Critical patent/EP0309682A2/fr
Publication of EP0309682A3 publication Critical patent/EP0309682A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP19880112223 1987-08-28 1988-07-28 Revêtement formant photoréserve résistant à la réticulation Ceased EP0309682A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90753 1987-08-28
US07/090,753 US4873176A (en) 1987-08-28 1987-08-28 Reticulation resistant photoresist coating

Publications (2)

Publication Number Publication Date
EP0309682A2 EP0309682A2 (fr) 1989-04-05
EP0309682A3 true EP0309682A3 (fr) 1990-12-27

Family

ID=22224140

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19880112223 Ceased EP0309682A3 (fr) 1987-08-28 1988-07-28 Revêtement formant photoréserve résistant à la réticulation

Country Status (4)

Country Link
US (2) US4873176A (fr)
EP (1) EP0309682A3 (fr)
JP (1) JPH01128062A (fr)
KR (1) KR890004410A (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59010728D1 (de) * 1989-04-24 1997-07-31 Siemens Ag Verfahren zur Erzeugung ätzresistenter Strukturen
US5254213A (en) * 1989-10-25 1993-10-19 Matsushita Electric Industrial Co., Ltd. Method of forming contact windows
EP0704718B1 (fr) * 1989-12-01 2002-03-20 Tosoh Corporation Compositions photosensibles positives pour la fabrication de lentilles
US5034092A (en) * 1990-10-09 1991-07-23 Motorola, Inc. Plasma etching of semiconductor substrates
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features
US5320864A (en) * 1992-06-29 1994-06-14 Lsi Logic Corporation Sedimentary deposition of photoresist on semiconductor wafers
JP2650178B2 (ja) * 1992-12-05 1997-09-03 ヤマハ株式会社 ドライエッチング方法及び装置
JPH06204162A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 半導体装置の製造方法および該方法に用いられるレジスト組成物
JPH07142349A (ja) * 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
US5726102A (en) * 1996-06-10 1998-03-10 Vanguard International Semiconductor Corporation Method for controlling etch bias in plasma etch patterning of integrated circuit layers
US5882537A (en) * 1996-11-25 1999-03-16 United Microelectronic Corp. Metallic precipitate monitoring method
GB2325439A (en) 1997-05-23 1998-11-25 Gersan Ets Marking diamond gemstone by plasma or ion beam etching through a laser ablated resist
US6471392B1 (en) 2001-03-07 2002-10-29 Holl Technologies Company Methods and apparatus for materials processing
JP3343341B2 (ja) * 2000-04-28 2002-11-11 ティーディーケイ株式会社 微細パターン形成方法及びそれに用いる現像／洗浄装置、及びそれを用いためっき方法、及びそれを用いた薄膜磁気ヘッドの製造方法
US6660646B1 (en) * 2000-09-21 2003-12-09 Northrop Grumman Corporation Method for plasma hardening photoresist in etching of semiconductor and superconductor films
JP4237430B2 (ja) * 2001-09-13 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 エッチング方法及びエッチング保護層形成用組成物
EP1469346B1 (fr) * 2002-01-23 2015-08-05 JSR Corporation Composition de résine photosensible positive et isolante, et objet durci obtenu de celle-ci
JP4213925B2 (ja) * 2002-08-19 2009-01-28 富士フイルム株式会社 ネガ型レジスト組成物
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP2015070232A (ja) * 2013-09-30 2015-04-13 株式会社東芝 半導体装置の製造方法及び半導体製造装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2523324A1 (fr) * 1982-03-15 1983-09-16 Shipley Co Composition pour reserve photochimique contenant un sensibilisateur diazo et une resine de polyvinylphenol et ses applications
EP0095209A2 (fr) * 1982-05-26 1983-11-30 Philips Electronics Uk Limited Procédé pour l'obtention d'un masque résistant à l'attaque par plasma
EP0133216A1 (fr) * 1983-07-11 1985-02-20 Hoechst Aktiengesellschaft Procédé pour obtenir des copies négatives utilisant un matériau à base de quinonediazides 1,2
EP0164248A2 (fr) * 1984-06-01 1985-12-11 Rohm And Haas Company Composition de revêtement photosensible, revêtement résistant à la chaleur fabriqué avec cette composition et emploi de ce revêtement pour la réalisation d'images photopolymères résistant à la chaleur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259430A (en) * 1974-05-01 1981-03-31 International Business Machines Corporation Photoresist O-quinone diazide containing composition and resist mask formation process
DE3107109A1 (de) * 1981-02-26 1982-09-09 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
US4387013A (en) * 1981-08-24 1983-06-07 Rca Corporation Reactive sputter etching of aluminum
EP0087262A1 (fr) * 1982-02-22 1983-08-31 Minnesota Mining And Manufacturing Company Compositions photosensibles à effet positif
GB2121198A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
CA1255952A (fr) * 1983-03-04 1989-06-20 Akihiro Furuta Compose photoresist positif
US4468284A (en) * 1983-07-06 1984-08-28 Psi Star, Inc. Process for etching an aluminum-copper alloy
US4524121A (en) * 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
GB8333901D0 (en) * 1983-12-20 1984-02-01 Minnesota Mining & Mfg Radiationsensitive compositions
JPS60154248A (ja) * 1984-01-24 1985-08-13 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
US4596763A (en) * 1984-10-01 1986-06-24 American Hoechst Corporation Positive photoresist processing with mid U-V range exposure
DE3437687A1 (de) * 1984-10-15 1986-04-17 Hoechst Ag, 6230 Frankfurt Verfahren zum herstellen negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
US4600683A (en) * 1985-04-22 1986-07-15 International Business Machines Corp. Cross-linked polyalkenyl phenol based photoresist compositions
US4929536A (en) * 1985-08-12 1990-05-29 Hoechst Celanese Corporation Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US4948697A (en) * 1985-10-28 1990-08-14 Hoechst Celanese Corporation Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
JPH0654388B2 (ja) * 1986-05-02 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
US4690838A (en) * 1986-08-25 1987-09-01 International Business Machines Corporation Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2523324A1 (fr) * 1982-03-15 1983-09-16 Shipley Co Composition pour reserve photochimique contenant un sensibilisateur diazo et une resine de polyvinylphenol et ses applications
EP0095209A2 (fr) * 1982-05-26 1983-11-30 Philips Electronics Uk Limited Procédé pour l'obtention d'un masque résistant à l'attaque par plasma
EP0133216A1 (fr) * 1983-07-11 1985-02-20 Hoechst Aktiengesellschaft Procédé pour obtenir des copies négatives utilisant un matériau à base de quinonediazides 1,2
EP0164248A2 (fr) * 1984-06-01 1985-12-11 Rohm And Haas Company Composition de revêtement photosensible, revêtement résistant à la chaleur fabriqué avec cette composition et emploi de ce revêtement pour la réalisation d'images photopolymères résistant à la chaleur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY. vol. 134, no. 8, August 1987, MANCHESTER, NEW HAMP pages 2045 - 2048; KROGH O. et al: "Spectroscopic Diagnostics of Photoresist Erosion in an Aluminium Etch Plasma" *

Also Published As

Publication number Publication date
EP0309682A2 (fr) 1989-04-05
JPH01128062A (ja) 1989-05-19
US4873176A (en) 1989-10-10
KR890004410A (ko) 1989-04-21
US5538820A (en) 1996-07-23

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