EP0218011A1 - Circuit détecteur d'intrusion sensible aux radiations infrarouges - Google Patents

Circuit détecteur d'intrusion sensible aux radiations infrarouges Download PDF

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Publication number
EP0218011A1
EP0218011A1 EP86108701A EP86108701A EP0218011A1 EP 0218011 A1 EP0218011 A1 EP 0218011A1 EP 86108701 A EP86108701 A EP 86108701A EP 86108701 A EP86108701 A EP 86108701A EP 0218011 A1 EP0218011 A1 EP 0218011A1
Authority
EP
European Patent Office
Prior art keywords
detector
circuit arrangement
operational amplifier
arrangement according
operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86108701A
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German (de)
English (en)
Other versions
EP0218011B1 (fr
Inventor
Hermann Dipl.-Ing. Zierhut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hirschmann Electronics GmbH and Co KG
Original Assignee
Hirschmann Electronics GmbH and Co KG
Richard Hirschmann Radiotechnisches Werk
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Publication date
Application filed by Hirschmann Electronics GmbH and Co KG, Richard Hirschmann Radiotechnisches Werk filed Critical Hirschmann Electronics GmbH and Co KG
Publication of EP0218011A1 publication Critical patent/EP0218011A1/fr
Application granted granted Critical
Publication of EP0218011B1 publication Critical patent/EP0218011B1/fr
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    • GPHYSICS
    • G08SIGNALLING
    • G08BSIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00Burglar, theft or intruder alarms
    • G08B13/18Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength
    • G08B13/189Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems
    • G08B13/19Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems
    • G08B13/191Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems using pyroelectric sensor means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S250/00Radiant energy
    • Y10S250/01Passive intrusion detectors

Definitions

  • the invention relates to a circuit arrangement for an infrared room surveillance detector having a pyro element as a sensor, the circuit arrangement being operated in the current operating mode and having an operational amplifier, the output signal of which is fed to a threshold value comparator stage.
  • Detector circuits that are used in connection with pyro-elements serving as infrared sensors are usually detectors that are operated in the voltage mode. Such detectors in the voltage mode have a high impedance, which is required for the further processing of the detector output signal, for example in a threshold value comparator stage.
  • the disadvantage of these detectors operating in the voltage mode is, however, that the detector sensitivity leaves something to be desired, and in particular the gain of the detector decreases towards higher frequencies; this means that the gain and thus the output voltage change depending on the frequency.
  • the invention is therefore based on the object of providing a circuit arrangement for an infrared detector which has a high sensitivity and a low level of noise, has a constant amplification over a relatively wide frequency range and is nevertheless high-impedance.
  • this object is achieved in that the operational amplifier is connected with high impedance and directly to the connections of the pyro element.
  • the measures according to the invention result in the possibility of using a detector which operates in the current operating mode in connection with a pyro element, the detector having a high impedance and yet being highly sensitive and low-noise, and having a uniform amplification over a relatively wide frequency range having.
  • the inventor made investigations with detectors of various types, which should be used in connection with pyro elements for infrared room protection surveillance. Contrary to the general view of the professional world, it was found that it is possible to find one in the Current detector operating mode without using an impedance converter and thus make the detector less sensitive to interference and less noise, provided that a high-impedance operational amplifier is used for the detector and the operational amplifier is connected directly to the connections of the pyroelement.
  • the feedback resistance of the operational amplifier is selected to be high and preferably in a range from 10 11 to 10 12 ohms.
  • Another embodiment of the invention is characterized in that the comparator stage is integrated in the detector housing. In this way, the detector becomes even less sensitive to interference and its electromagnetic compatibility is increased.
  • An embodiment of the present invention consists in that a blocking diode or a transistor connected as a blocking diode is provided between the minus terminal of the operating voltage source and the reference voltage output, and between the latter and the plus terminal of the operating voltage source.
  • Static charges which can occur in particular during the manufacturing process, result in high voltage peaks, so-called spikes, which reach the operational amplifier and, if the diodes are not present, can destroy the latter, particularly if it is a CMOS operational amplifier.
  • the provision of the diodes prevents this.
  • the diodes or transistors designed as blocking diodes are preferably accommodated within the detector housing.
  • a blocking diode or a transistor connected as a blocking diode only between the minus terminal of the operating voltage source and the reference voltage output, which transistor is arranged within the detector housing.
  • a resistor is provided, which is located outside the detector housing.
  • the diode or diodes are a Zener diode or Zener diodes, or transistors connected as Zener diodes. If, in addition, according to a further embodiment of the invention, the operating voltages are supplied via a series resistor in each case, the use of zener diodes results in an additional operating voltage stabilization for which no further components or measures are required.
  • the measure can be advantageous to ground the minus terminal of the operating voltage source and to supply only the positive operating voltage via a series resistor.
  • the aim of a detector used in connection with infrared sensors is to have a substantially constant gain over the operating frequency range.
  • the gain characteristic of a detector operating in the current operating mode has a straightforward gain characteristic curve over a relatively wide range towards higher frequencies, ie a constant gain over a relatively wide frequency range, so that a detector for the current operating mode in particular is much more appropriate in this regard.
  • a detector operating in the current mode does not have a sufficiently high impedance, so that an impedance converter must be provided in the detector circuit.
  • Fig. 2 shows such a detector operating in the current mode with an impedance converter.
  • FET field effect transistor
  • the source electrode of the FET 2 is connected via a resistor R 1 to ground or at the negative pole of the operating voltage source and directly at the negative input of an operational amplifier 3, at the positive input of which the reference voltage U Ref is present.
  • a feedback resistor R R is connected between the gate electrode of the FET 2 and the output of the operational amplifier 3.
  • the output signal of the operational amplifier 3 is fed to a further circuit part, for example a threshold value comparator stage for signal evaluation.
  • the impedance converter arranged in front of the amplifier in the form of a junction FET 2 has the disadvantage that the voltage noise of this FET is fully included in the signal to be evaluated. In particular the voltage noise of the FET is caused considerably by the ohmic reaction conductance acting between the drain electrode and the gate electrode.
  • FIG. 3 shows an exemplary embodiment of a circuit arrangement according to the invention for a detector used in connection with a pyro element.
  • the pyroelement 1 is connected with its one connection directly to the minus input of an operational amplifier 3 and with its other connection directly to the positive input of the operational amplifier 3.
  • a feedback resistor R R Between the output and the negative input of the operational amplifier 3 there is a feedback resistor R R.
  • the output signal of the operational amplifier is the detector signal A to be evaluated in the further circuit arrangement, which is fed to a threshold value comparator stage 4, for example.
  • the operating voltages + U B and - U B are fed to the operational amplifier 3.
  • the feedback resistance R R is also advantageous to select the feedback resistance R R as high as possible, advantageously above 10 11 ohms, for example 10 12 ohms. This makes the output signal so large that further amplification before processing the signal in the threshold comparator stage 4 can be omitted. Apart from a simpler design, this has the advantage that there are no additional components that absorb external interference and make the detector less sensitive to interference.
  • the detector housing is indicated by reference number 5. It contains the circuit parts of the detector circuit which have been described so far and which are essentially protected by the housing 5 against external interference.
  • the reference voltage U Ref is preferably chosen so that it lies approximately in the middle of the modulation range of the output voltage of the operational amplifier, which corresponds to approximately half the operating voltage when using CMOS operational amplifiers, which - as mentioned - are particularly suitable.
  • the operational amplifier experiences practically no load because the resistor R ' R has a high resistance.
  • diodes D 1 and D 2 can be used, which are provided in the circuit arrangement in the manner shown in FIG. 3.
  • the anode of a diode D 1 is connected to the minus terminal - U B of the operating voltage source, and its cathode is connected to the reference voltage output U Ref ; the latter is connected to the anode of a further diode D2, the cathode of which is connected to the positive terminal + U B of the operating voltage source.
  • These diodes serve to protect the components located in the detector housing, in particular the operational amplifier 3. Instead of the diodes, transistors switched as diodes can also be used.
  • the operating voltage - U B and + U B are supplied via resistors R 3 and R 4 . If Zener diodes are used as diodes D 1 and D 2 , the operating voltage is stabilized without additional circuitry complexity.
  • the threshold value comparator stage 4 which is used to evaluate the detector signal A, contains two comparators 6 and 7 in the form of operational amplifiers, the output signal A of the operational amplifier 3 being fed to the minus input of the comparator 6 and the plus input of the comparator 7.
  • the reference voltage U Ref is applied to the plus input of the comparator 6 or to the minus input of the comparator 7 via threshold value setting resistors R 1 and R 2 .
  • the threshold compensation stage 4 can be accommodated in the detector housing 5. In this way, this circuit part is also essentially shielded against external interference.
  • an operational amplifier 3 is preferably selected to have a constant no-load gain over the desired frequency range. If necessary, two operational amplifiers can also be connected in series for the said purpose. An idle gain in the useful range of 120 dB is useful. The compensation of the operational amplifier, i. H. the break point of the idle gain should be outside the useful range.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
EP86108701A 1985-08-09 1986-06-26 Circuit détecteur d'intrusion sensible aux radiations infrarouges Expired - Lifetime EP0218011B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3528646A DE3528646C3 (de) 1985-08-09 1985-08-09 Schaltungsanordnung für einen Infrarot-Raumüberwachungsdetektor
DE3528646 1985-08-09

Publications (2)

Publication Number Publication Date
EP0218011A1 true EP0218011A1 (fr) 1987-04-15
EP0218011B1 EP0218011B1 (fr) 1990-11-14

Family

ID=6278143

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86108701A Expired - Lifetime EP0218011B1 (fr) 1985-08-09 1986-06-26 Circuit détecteur d'intrusion sensible aux radiations infrarouges

Country Status (3)

Country Link
US (1) US4795905A (fr)
EP (1) EP0218011B1 (fr)
DE (2) DE3528646C3 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641470A1 (fr) * 1992-05-21 1995-03-08 Intelectron Products Company Detecteur de mouvement a discrimination de signal ameliore

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3717369A1 (de) * 1987-05-22 1988-12-08 Hirschmann Radiotechnik Verfahren und vorrichtung zur raumueberwachung
US5280335A (en) * 1992-05-26 1994-01-18 The United States Of America As Represented By The Secretary Of The Navy Fiber-optical testing system having a detection circuit
US5330226A (en) * 1992-12-04 1994-07-19 Trw Vehicle Safety Systems Inc. Method and apparatus for detecting an out of position occupant
US5561412A (en) * 1993-07-12 1996-10-01 Hill-Rom, Inc. Patient/nurse call system
US5838223A (en) * 1993-07-12 1998-11-17 Hill-Rom, Inc. Patient/nurse call system
US5482314A (en) * 1994-04-12 1996-01-09 Aerojet General Corporation Automotive occupant sensor system and method of operation by sensor fusion
DE19619459C2 (de) * 1996-05-14 2000-06-08 Heimann Optoelectronics Gmbh Schaltung zur Erfassung elektromagnetischer Strahlung
DE19627999A1 (de) 1996-07-11 2016-05-04 Thomson-Csf Optisch selektiver Leistungsteiler mit großer Bandbreite
US6026340A (en) * 1998-09-30 2000-02-15 The Robert Bosch Corporation Automotive occupant sensor system and method of operation by sensor fusion
EP1665479A4 (fr) 2003-08-21 2008-01-23 Hill Rom Services Inc Prise et receptacle possedant un couplage avec fil et sans fil
US7319386B2 (en) 2004-08-02 2008-01-15 Hill-Rom Services, Inc. Configurable system for alerting caregivers
US7852208B2 (en) 2004-08-02 2010-12-14 Hill-Rom Services, Inc. Wireless bed connectivity
US20070072676A1 (en) * 2005-09-29 2007-03-29 Shumeet Baluja Using information from user-video game interactions to target advertisements, such as advertisements to be served in video games for example
US8461968B2 (en) 2007-08-29 2013-06-11 Hill-Rom Services, Inc. Mattress for a hospital bed for use in a healthcare facility and management of same
US7868740B2 (en) 2007-08-29 2011-01-11 Hill-Rom Services, Inc. Association of support surfaces and beds
US8082160B2 (en) 2007-10-26 2011-12-20 Hill-Rom Services, Inc. System and method for collection and communication of data from multiple patient care devices
US8046625B2 (en) * 2008-02-22 2011-10-25 Hill-Rom Services, Inc. Distributed fault tolerant architecture for a healthcare communication system
US8779924B2 (en) * 2010-02-19 2014-07-15 Hill-Rom Services, Inc. Nurse call system with additional status board
US9411934B2 (en) 2012-05-08 2016-08-09 Hill-Rom Services, Inc. In-room alarm configuration of nurse call system
US9314159B2 (en) 2012-09-24 2016-04-19 Physio-Control, Inc. Patient monitoring device with remote alert
US9830424B2 (en) 2013-09-18 2017-11-28 Hill-Rom Services, Inc. Bed/room/patient association systems and methods
US11123014B2 (en) 2017-03-21 2021-09-21 Stryker Corporation Systems and methods for ambient energy powered physiological parameter monitoring
US11911325B2 (en) 2019-02-26 2024-02-27 Hill-Rom Services, Inc. Bed interface for manual location

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657644A (en) * 1968-11-12 1972-04-18 Nasa Thermodielectric radiometer utilizing polymer film
DE2816580A1 (de) * 1977-04-19 1978-11-02 Philips Nv Pyroelektrische detektorschaltungsanordnung und -vorrichtung
GB1551541A (en) * 1977-09-13 1979-08-30 Bloice J A Infrared intrusion detector system
EP0049493A1 (fr) * 1980-10-06 1982-04-14 Cerberus Ag Détecteur d'intrusion à infrarouge
US4384207A (en) * 1981-01-23 1983-05-17 Eltec Instruments, Inc. Differential pyroelectric detector

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149160A (en) * 1978-01-30 1979-04-10 Honeywell Inc. Multi-input signal comparator and indicator circuit
JPS5922733A (ja) * 1982-07-29 1984-02-06 Kumi Kasei Kk 成形機の加工中断時における駆動モ−タ−の空転防止方法
JP3685555B2 (ja) * 1996-06-21 2005-08-17 ニチハ株式会社 屋根材の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657644A (en) * 1968-11-12 1972-04-18 Nasa Thermodielectric radiometer utilizing polymer film
DE2816580A1 (de) * 1977-04-19 1978-11-02 Philips Nv Pyroelektrische detektorschaltungsanordnung und -vorrichtung
GB1551541A (en) * 1977-09-13 1979-08-30 Bloice J A Infrared intrusion detector system
EP0049493A1 (fr) * 1980-10-06 1982-04-14 Cerberus Ag Détecteur d'intrusion à infrarouge
US4384207A (en) * 1981-01-23 1983-05-17 Eltec Instruments, Inc. Differential pyroelectric detector

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELEKTRONIK, Heft 6, Seiten 217-219, 1972; H.P. SIEBERT "Pyroelektrische Strahlungsdetektoren" *
PATENT ABSTRACTS OF JAPAN, Band 9, Nr. 97 (P-352)[1820], 26. April 1985; & JP - A - 59 222 733 (NAIRUSU BUHIN K.K.) 14.12.1984 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641470A1 (fr) * 1992-05-21 1995-03-08 Intelectron Products Company Detecteur de mouvement a discrimination de signal ameliore
EP0641470A4 (fr) * 1992-05-21 1995-09-13 Intelectron Prod Co Detecteur de mouvement a discrimination de signal ameliore.

Also Published As

Publication number Publication date
DE3528646C3 (de) 1994-04-07
US4795905A (en) 1989-01-03
EP0218011B1 (fr) 1990-11-14
DE3528646C2 (fr) 1994-04-07
DE3675621D1 (de) 1990-12-20
DE3528646A1 (de) 1987-02-19

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