DK1756882T3 - Fremgangsmåde til fremstilling af piezoelektriske materialer - Google Patents
Fremgangsmåde til fremstilling af piezoelektriske materialerInfo
- Publication number
- DK1756882T3 DK1756882T3 DK05778186T DK05778186T DK1756882T3 DK 1756882 T3 DK1756882 T3 DK 1756882T3 DK 05778186 T DK05778186 T DK 05778186T DK 05778186 T DK05778186 T DK 05778186T DK 1756882 T3 DK1756882 T3 DK 1756882T3
- Authority
- DK
- Denmark
- Prior art keywords
- stack
- sol
- piezoelectric
- piezoelectric ceramic
- ceramic oxide
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000919 ceramic Substances 0.000 abstract 5
- 239000000843 powder Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000005470 impregnation Methods 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Laminated Bodies (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0451289A FR2871942B1 (fr) | 2004-06-17 | 2004-06-17 | Procede de preparation de materiaux piezoelectriques |
| PCT/FR2005/050453 WO2006003342A1 (fr) | 2004-06-17 | 2005-06-16 | Procede de preparation de materiaux piezoelectriques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK1756882T3 true DK1756882T3 (da) | 2008-12-15 |
Family
ID=34945193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK05778186T DK1756882T3 (da) | 2004-06-17 | 2005-06-16 | Fremgangsmåde til fremstilling af piezoelektriske materialer |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20080182128A1 (ja) |
| EP (1) | EP1756882B1 (ja) |
| JP (1) | JP5896586B2 (ja) |
| AT (1) | ATE408242T1 (ja) |
| CA (1) | CA2569927C (ja) |
| DE (1) | DE602005009697D1 (ja) |
| DK (1) | DK1756882T3 (ja) |
| ES (1) | ES2314699T3 (ja) |
| FR (1) | FR2871942B1 (ja) |
| SI (1) | SI1756882T1 (ja) |
| WO (1) | WO2006003342A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8461462B2 (en) * | 2009-09-28 | 2013-06-11 | Kyocera Corporation | Circuit substrate, laminated board and laminated sheet |
| KR101669953B1 (ko) | 2010-03-26 | 2016-11-09 | 삼성전자 주식회사 | 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자 |
| FR2967992B1 (fr) | 2010-11-26 | 2015-05-29 | Commissariat Energie Atomique | Preparation de sols d'oxydes metalliques stables, utiles notamment pour la fabrication de films minces a proprietes optiques et resistants a l'abrasion |
| US9391258B2 (en) | 2011-02-18 | 2016-07-12 | Panasonic Intellectual Property Management Co., Ltd. | Piezoelectric element |
| WO2013026125A1 (en) | 2011-08-24 | 2013-02-28 | National Research Council Of Canada | Porosity control in piezoelectric films |
| FR2981064B1 (fr) | 2011-10-07 | 2014-11-28 | Commissariat Energie Atomique | Procede de preparation d'un materiau sur un substrat par voie sol-gel |
| US9099384B2 (en) | 2012-02-15 | 2015-08-04 | Drexel University | Charge ordered vertical transistors |
| FR3045036B1 (fr) * | 2015-12-15 | 2017-12-22 | Commissariat Energie Atomique | Procede de preparation d'une solution sol-gel utilisable pour la preparation d'une ceramique de titanate de baryum dope par du hafnium et/ou par au moins un element lanthanide |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04293280A (ja) * | 1991-03-22 | 1992-10-16 | Seiko Instr Inc | セラミック薄膜素子の製造方法 |
| JPH0632613A (ja) * | 1992-07-16 | 1994-02-08 | Rohm Co Ltd | 複合酸化物薄膜の製造方法 |
| JPH06112550A (ja) * | 1992-09-28 | 1994-04-22 | Seiko Epson Corp | 圧電体、強誘電体薄膜素子の製造方法 |
| JP3336720B2 (ja) * | 1994-02-21 | 2002-10-21 | 株式会社デンソー | 圧電素子 |
| DE4416245C1 (de) * | 1994-05-07 | 1995-04-13 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von PZT-Schichten aus niedrig sinterndem PZT-Pulver |
| JP3865442B2 (ja) * | 1995-11-22 | 2007-01-10 | のぞみフォトニクス株式会社 | 多層酸化物薄膜素子及びその製造方法 |
| JP3307400B2 (ja) * | 1996-09-12 | 2002-07-24 | シチズン時計株式会社 | 強誘電体素子及びその製法ならびにインクジェットヘッド |
| DE19744630C1 (de) * | 1997-10-09 | 1999-06-24 | Fraunhofer Ges Forschung | Verfahren zur Herstellung und Verwendung eines piezoelektrischen Bauelementes |
| US6333066B1 (en) * | 1997-11-21 | 2001-12-25 | Samsung Electronics Co., Ltd. | Method for forming PZT thin film using seed layer |
| JP4122564B2 (ja) * | 1998-04-24 | 2008-07-23 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法 |
| JP3750413B2 (ja) * | 1999-04-15 | 2006-03-01 | セイコーエプソン株式会社 | 圧電体素子の製造方法及びインクジェット式記録ヘッドの製造方法 |
| JP4110503B2 (ja) * | 2000-04-14 | 2008-07-02 | セイコーエプソン株式会社 | 圧電体素子およびインクジェット式記録ヘッドの製造方法 |
| KR100369118B1 (ko) * | 2000-05-13 | 2003-01-24 | 한국과학기술연구원 | 스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 |
| US6677059B2 (en) * | 2000-12-12 | 2004-01-13 | Tdk Corporation | EL device and making method |
| JP2003257269A (ja) * | 2002-02-28 | 2003-09-12 | Star Micronics Co Ltd | 誘電体膜の製造方法 |
| SG107103A1 (en) * | 2002-05-24 | 2004-11-29 | Ntu Ventures Private Ltd | Process for producing nanocrystalline composites |
-
2004
- 2004-06-17 FR FR0451289A patent/FR2871942B1/fr not_active Expired - Fee Related
-
2005
- 2005-06-16 AT AT05778186T patent/ATE408242T1/de not_active IP Right Cessation
- 2005-06-16 CA CA2569927A patent/CA2569927C/en not_active Expired - Fee Related
- 2005-06-16 DK DK05778186T patent/DK1756882T3/da active
- 2005-06-16 EP EP05778186A patent/EP1756882B1/fr not_active Not-in-force
- 2005-06-16 SI SI200530436T patent/SI1756882T1/sl unknown
- 2005-06-16 WO PCT/FR2005/050453 patent/WO2006003342A1/fr active IP Right Grant
- 2005-06-16 US US11/629,589 patent/US20080182128A1/en not_active Abandoned
- 2005-06-16 ES ES05778186T patent/ES2314699T3/es active Active
- 2005-06-16 JP JP2007516015A patent/JP5896586B2/ja not_active Expired - Fee Related
- 2005-06-16 DE DE602005009697T patent/DE602005009697D1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2871942A1 (fr) | 2005-12-23 |
| CA2569927C (en) | 2016-04-05 |
| CA2569927A1 (en) | 2006-01-12 |
| EP1756882A1 (fr) | 2007-02-28 |
| SI1756882T1 (sl) | 2009-02-28 |
| JP2008504672A (ja) | 2008-02-14 |
| EP1756882B1 (fr) | 2008-09-10 |
| WO2006003342A1 (fr) | 2006-01-12 |
| DE602005009697D1 (de) | 2008-10-23 |
| FR2871942B1 (fr) | 2006-08-04 |
| ES2314699T3 (es) | 2009-03-16 |
| US20080182128A1 (en) | 2008-07-31 |
| ATE408242T1 (de) | 2008-09-15 |
| JP5896586B2 (ja) | 2016-03-30 |
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