DK171662B1 - Højfrekvensionkilde - Google Patents
Højfrekvensionkilde Download PDFInfo
- Publication number
- DK171662B1 DK171662B1 DK642888A DK642888A DK171662B1 DK 171662 B1 DK171662 B1 DK 171662B1 DK 642888 A DK642888 A DK 642888A DK 642888 A DK642888 A DK 642888A DK 171662 B1 DK171662 B1 DK 171662B1
- Authority
- DK
- Denmark
- Prior art keywords
- plasma
- ion
- container
- vessel
- coil
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 67
- 238000000605 extraction Methods 0.000 claims abstract description 44
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims description 23
- 230000000638 stimulation Effects 0.000 claims description 11
- 230000001133 acceleration Effects 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000005477 sputtering target Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 239000012811 non-conductive material Substances 0.000 claims description 4
- 230000001629 suppression Effects 0.000 claims description 4
- 208000006673 asthma Diseases 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 107
- 239000002184 metal Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000231 karaya gum Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- General Induction Heating (AREA)
- Plasma Technology (AREA)
- Electrotherapy Devices (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3708716A DE3708716C2 (de) | 1987-03-18 | 1987-03-18 | Hochfrequenz-ionenquelle |
| DE3708716 | 1987-03-18 | ||
| DE8800152 | 1988-03-16 | ||
| PCT/DE1988/000152 WO1988007259A1 (fr) | 1987-03-18 | 1988-03-16 | Source d'ions de haute frequence |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK642888A DK642888A (da) | 1988-11-17 |
| DK642888D0 DK642888D0 (da) | 1988-11-17 |
| DK171662B1 true DK171662B1 (da) | 1997-03-03 |
Family
ID=6323318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK642888A DK171662B1 (da) | 1987-03-18 | 1988-11-17 | Højfrekvensionkilde |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5017835A (fr) |
| EP (1) | EP0349555B1 (fr) |
| JP (1) | JP2776855B2 (fr) |
| KR (1) | KR960008925B1 (fr) |
| AT (1) | ATE90811T1 (fr) |
| AU (1) | AU1423888A (fr) |
| DE (2) | DE3708716C2 (fr) |
| DK (1) | DK171662B1 (fr) |
| WO (1) | WO1988007259A1 (fr) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3900252C1 (fr) * | 1989-01-05 | 1990-05-23 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
| DE3942964A1 (de) * | 1989-12-23 | 1991-06-27 | Leybold Ag | Einrichtung fuer die erzeugung eines plasmas |
| DE69229083T2 (de) * | 1991-07-18 | 1999-11-11 | Mitsubishi Jukogyo K.K., Tokio/Tokyo | Sputteranlage und Ionenquelle |
| JP3137682B2 (ja) * | 1991-08-12 | 2001-02-26 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5216330A (en) * | 1992-01-14 | 1993-06-01 | Honeywell Inc. | Ion beam gun |
| US5218210A (en) * | 1992-02-18 | 1993-06-08 | Eaton Corporation | Broad beam flux density control |
| DE4241927C2 (de) * | 1992-12-11 | 1994-09-22 | Max Planck Gesellschaft | Zur Anordnung in einem Vakuumgefäß geeignete selbsttragende isolierte Elektrodenanordnung, insbesondere Antennenspule für einen Hochfrequenz-Plasmagenerator |
| US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
| FR2716573B1 (fr) * | 1994-02-24 | 1996-05-03 | Europ Propulsion | Système d'optique ionique à trois grilles. |
| DE19539986A1 (de) * | 1995-10-27 | 1997-04-30 | Leybold Ag | Vakuumbeschichtungsanlage mit einem in der Vakuumkammer angeordneten Tiegel zur Aufnahme von zu verdampfendem Material |
| DE19618734C2 (de) * | 1996-01-23 | 1999-08-26 | Fraunhofer Ges Forschung | Ionenquelle für eine Ionenstrahlanlage |
| WO1997027613A1 (fr) * | 1996-01-23 | 1997-07-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Source ionique pour systeme a faisceau ionique |
| US5858477A (en) * | 1996-12-10 | 1999-01-12 | Akashic Memories Corporation | Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon |
| WO1997045855A1 (fr) * | 1996-05-31 | 1997-12-04 | Akashic Memories Corporation | Couches de carbone amorphe fortement tetrahedrique et procedes de fabrication desdits materiaux |
| GB9622127D0 (en) * | 1996-10-24 | 1996-12-18 | Nordiko Ltd | Ion gun |
| US5959396A (en) * | 1996-10-29 | 1999-09-28 | Texas Instruments Incorporated | High current nova dual slit electrode enchancement |
| US6835279B2 (en) * | 1997-07-30 | 2004-12-28 | Hitachi Kokusai Electric Inc. | Plasma generation apparatus |
| US6118407A (en) * | 1999-03-23 | 2000-09-12 | The United States Of America As Represented By The Secretary Of The Navy | Horizontal plasma antenna using plasma drift currents |
| US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
| US7196283B2 (en) | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
| US7220937B2 (en) * | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
| US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
| US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
| US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
| US6528751B1 (en) | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
| US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US7141757B2 (en) * | 2000-03-17 | 2006-11-28 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
| DE10018143C5 (de) * | 2000-04-12 | 2012-09-06 | Oerlikon Trading Ag, Trübbach | DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems |
| DE10058326C1 (de) | 2000-11-24 | 2002-06-13 | Astrium Gmbh | Induktiv gekoppelte Hochfrequenz-Elektronenquelle mit reduziertem Leistungsbedarf durch elektrostatischen Einschluss von Elektronen |
| JP2003124096A (ja) * | 2001-10-11 | 2003-04-25 | Advantest Corp | 電子ビーム露光方法及び露光装置 |
| US6771026B2 (en) * | 2002-06-12 | 2004-08-03 | Tokyo Electron Limited | Plasma generation by mode-conversion of RF-electromagnetic wave to electron cyclotron wave |
| TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| US6876155B2 (en) * | 2002-12-31 | 2005-04-05 | Lam Research Corporation | Plasma processor apparatus and method, and antenna |
| US7795153B2 (en) * | 2003-05-16 | 2010-09-14 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
| US7470626B2 (en) * | 2003-05-16 | 2008-12-30 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7901952B2 (en) * | 2003-05-16 | 2011-03-08 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
| US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
| US7452824B2 (en) * | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
| US7910013B2 (en) | 2003-05-16 | 2011-03-22 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7192874B2 (en) * | 2003-07-15 | 2007-03-20 | International Business Machines Corporation | Method for reducing foreign material concentrations in etch chambers |
| US7335521B2 (en) * | 2004-07-02 | 2008-02-26 | Oc Oerlikon Balzers Ag | Method for the production of multilayer discs |
| WO2006115172A1 (fr) * | 2005-04-22 | 2006-11-02 | Masanobu Nunogaki | Source d'ion solide |
| US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
| US20070007844A1 (en) * | 2005-07-08 | 2007-01-11 | Levitronics, Inc. | Self-sustaining electric-power generator utilizing electrons of low inertial mass to magnify inductive energy |
| DE102006062710A1 (de) * | 2006-04-27 | 2007-11-15 | Ipt Ionen- Und Plasmatechnik Gmbh | Plasmaquelle |
| DE102008022181B4 (de) * | 2008-05-05 | 2019-05-02 | Arianegroup Gmbh | Ionentriebwerk |
| DE102010055889B4 (de) * | 2010-12-21 | 2014-04-30 | Ushio Denki Kabushiki Kaisha | Verfahren und Vorrichtung zur Erzeugung kurzwelliger Strahlung mittels einer gasentladungsbasierten Hochfrequenzhochstromentladung |
| US8541758B1 (en) * | 2011-06-17 | 2013-09-24 | Aqua Treatment Services, Inc. | Ultraviolet reactor |
| US8481966B1 (en) * | 2012-02-28 | 2013-07-09 | Tiza Lab, L.L.C. | Microplasma ion source for focused ion beam applications |
| US8674321B2 (en) * | 2012-02-28 | 2014-03-18 | Tiza Lab, L.L.C. | Microplasma ion source for focused ion beam applications |
| CN104411082B (zh) * | 2014-11-12 | 2017-12-19 | 中国科学院深圳先进技术研究院 | 等离子源系统和等离子生成方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3634704A (en) * | 1970-09-02 | 1972-01-11 | Atomic Energy Commission | Apparatus for the production of highly stripped ions |
| GB1399603A (en) * | 1971-09-07 | 1975-07-02 | Boswell R W Christiansen P J N | Ion sources |
| DE2633778C3 (de) * | 1976-07-28 | 1981-12-24 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Ionentriebwerk |
| JPS55141729A (en) * | 1979-04-21 | 1980-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Ion-shower device |
| JPS5669915A (en) * | 1979-11-09 | 1981-06-11 | Sony Corp | Phase shifter |
| FR2475798A1 (fr) * | 1980-02-13 | 1981-08-14 | Commissariat Energie Atomique | Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede |
| US4447773A (en) * | 1981-06-22 | 1984-05-08 | California Institute Of Technology | Ion beam accelerator system |
| JPH0616384B2 (ja) * | 1984-06-11 | 1994-03-02 | 日本電信電話株式会社 | マイクロ波イオン源 |
| JPS6134832A (ja) * | 1984-07-26 | 1986-02-19 | Hitachi Ltd | 大口径イオン源 |
| JPH0740468B2 (ja) * | 1984-12-11 | 1995-05-01 | 株式会社日立製作所 | 高周波プラズマ発生装置 |
| US4774437A (en) * | 1986-02-28 | 1988-09-27 | Varian Associates, Inc. | Inverted re-entrant magnetron ion source |
| US4727298A (en) * | 1986-07-14 | 1988-02-23 | The United States Of America As Represented By The Department Of Energy | Triggered plasma opening switch |
| US4859908A (en) * | 1986-09-24 | 1989-08-22 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus for large area ion irradiation |
| DE3632340C2 (de) * | 1986-09-24 | 1998-01-15 | Leybold Ag | Induktiv angeregte Ionenquelle |
| DE3718244A1 (de) * | 1987-05-30 | 1988-12-08 | Grix Raimund | Speicherionenquelle fuer flugzeit-massenspektrometer |
| JPH01132033A (ja) * | 1987-11-17 | 1989-05-24 | Hitachi Ltd | イオン源及び薄膜形成装置 |
-
1987
- 1987-03-18 DE DE3708716A patent/DE3708716C2/de not_active Expired - Fee Related
-
1988
- 1988-03-16 AT AT88902393T patent/ATE90811T1/de not_active IP Right Cessation
- 1988-03-16 KR KR1019880701470A patent/KR960008925B1/ko not_active IP Right Cessation
- 1988-03-16 AU AU14238/88A patent/AU1423888A/en not_active Abandoned
- 1988-03-16 US US07/415,259 patent/US5017835A/en not_active Expired - Lifetime
- 1988-03-16 WO PCT/DE1988/000152 patent/WO1988007259A1/fr active IP Right Grant
- 1988-03-16 DE DE8888902393T patent/DE3881879D1/de not_active Expired - Fee Related
- 1988-03-16 JP JP63502394A patent/JP2776855B2/ja not_active Expired - Fee Related
- 1988-03-16 EP EP88902393A patent/EP0349555B1/fr not_active Expired - Lifetime
- 1988-11-17 DK DK642888A patent/DK171662B1/da not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1988007259A1 (fr) | 1988-09-22 |
| EP0349555B1 (fr) | 1993-06-16 |
| JP2776855B2 (ja) | 1998-07-16 |
| US5017835A (en) | 1991-05-21 |
| KR960008925B1 (ko) | 1996-07-09 |
| JPH02502594A (ja) | 1990-08-16 |
| ATE90811T1 (de) | 1993-07-15 |
| EP0349555A1 (fr) | 1990-01-10 |
| DE3708716C2 (de) | 1993-11-04 |
| KR890700918A (ko) | 1989-04-28 |
| DK642888A (da) | 1988-11-17 |
| DK642888D0 (da) | 1988-11-17 |
| DE3881879D1 (de) | 1993-07-22 |
| DE3708716A1 (de) | 1988-09-29 |
| AU1423888A (en) | 1988-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B1 | Patent granted (law 1993) | ||
| PBP | Patent lapsed |