DK642888A - Hoejfrekvensionkilde - Google Patents

Hoejfrekvensionkilde

Info

Publication number
DK642888A
DK642888A DK642888A DK642888A DK642888A DK 642888 A DK642888 A DK 642888A DK 642888 A DK642888 A DK 642888A DK 642888 A DK642888 A DK 642888A DK 642888 A DK642888 A DK 642888A
Authority
DK
Denmark
Prior art keywords
ion
plasma
shape
high frequency
container
Prior art date
Application number
DK642888A
Other languages
English (en)
Other versions
DK642888D0 (da
DK171662B1 (da
Inventor
Hans Oechsner
Original Assignee
Hans Oechsner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hans Oechsner filed Critical Hans Oechsner
Publication of DK642888D0 publication Critical patent/DK642888D0/da
Publication of DK642888A publication Critical patent/DK642888A/da
Application granted granted Critical
Publication of DK171662B1 publication Critical patent/DK171662B1/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • General Induction Heating (AREA)
  • Electrotherapy Devices (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DK642888A 1987-03-18 1988-11-17 Højfrekvensionkilde DK171662B1 (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE3708716 1987-03-18
DE3708716A DE3708716C2 (de) 1987-03-18 1987-03-18 Hochfrequenz-ionenquelle
PCT/DE1988/000152 WO1988007259A1 (en) 1987-03-18 1988-03-16 High-frequency ion source
DE8800152 1988-03-16

Publications (3)

Publication Number Publication Date
DK642888D0 DK642888D0 (da) 1988-11-17
DK642888A true DK642888A (da) 1988-11-17
DK171662B1 DK171662B1 (da) 1997-03-03

Family

ID=6323318

Family Applications (1)

Application Number Title Priority Date Filing Date
DK642888A DK171662B1 (da) 1987-03-18 1988-11-17 Højfrekvensionkilde

Country Status (9)

Country Link
US (1) US5017835A (da)
EP (1) EP0349555B1 (da)
JP (1) JP2776855B2 (da)
KR (1) KR960008925B1 (da)
AT (1) ATE90811T1 (da)
AU (1) AU1423888A (da)
DE (2) DE3708716C2 (da)
DK (1) DK171662B1 (da)
WO (1) WO1988007259A1 (da)

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DE3900252C1 (da) * 1989-01-05 1990-05-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
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US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
FR2716573B1 (fr) * 1994-02-24 1996-05-03 Europ Propulsion Système d'optique ionique à trois grilles.
DE19539986A1 (de) * 1995-10-27 1997-04-30 Leybold Ag Vakuumbeschichtungsanlage mit einem in der Vakuumkammer angeordneten Tiegel zur Aufnahme von zu verdampfendem Material
DE19618734C2 (de) * 1996-01-23 1999-08-26 Fraunhofer Ges Forschung Ionenquelle für eine Ionenstrahlanlage
JP3186066B2 (ja) * 1996-01-23 2001-07-11 フラウンホーファー ゲゼルシャフト ツア フォルデルンク デア アンゲヴァンテン フォルシュンク エー ファウ イオンの広範囲注入のためのイオン源
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EP0906636B1 (en) * 1996-05-31 2005-05-25 Akashic Memories Corporation Highly tetrahedral amorphous carbon films and methods and ion-beam source for their production
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US6118407A (en) * 1999-03-23 2000-09-12 The United States Of America As Represented By The Secretary Of The Navy Horizontal plasma antenna using plasma drift currents
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
DE10018143C5 (de) * 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
DE10058326C1 (de) 2000-11-24 2002-06-13 Astrium Gmbh Induktiv gekoppelte Hochfrequenz-Elektronenquelle mit reduziertem Leistungsbedarf durch elektrostatischen Einschluss von Elektronen
JP2003124096A (ja) * 2001-10-11 2003-04-25 Advantest Corp 電子ビーム露光方法及び露光装置
US6771026B2 (en) * 2002-06-12 2004-08-03 Tokyo Electron Limited Plasma generation by mode-conversion of RF-electromagnetic wave to electron cyclotron wave
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7192874B2 (en) * 2003-07-15 2007-03-20 International Business Machines Corporation Method for reducing foreign material concentrations in etch chambers
US7335521B2 (en) * 2004-07-02 2008-02-26 Oc Oerlikon Balzers Ag Method for the production of multilayer discs
WO2006115172A1 (ja) * 2005-04-22 2006-11-02 Masanobu Nunogaki 固体イオン源
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
US20070007844A1 (en) * 2005-07-08 2007-01-11 Levitronics, Inc. Self-sustaining electric-power generator utilizing electrons of low inertial mass to magnify inductive energy
DE102006062710A1 (de) * 2006-04-27 2007-11-15 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
DE102008022181B4 (de) * 2008-05-05 2019-05-02 Arianegroup Gmbh Ionentriebwerk
DE102010055889B4 (de) * 2010-12-21 2014-04-30 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Erzeugung kurzwelliger Strahlung mittels einer gasentladungsbasierten Hochfrequenzhochstromentladung
US8541758B1 (en) * 2011-06-17 2013-09-24 Aqua Treatment Services, Inc. Ultraviolet reactor
US8481966B1 (en) * 2012-02-28 2013-07-09 Tiza Lab, L.L.C. Microplasma ion source for focused ion beam applications
US8674321B2 (en) * 2012-02-28 2014-03-18 Tiza Lab, L.L.C. Microplasma ion source for focused ion beam applications
CN104411082B (zh) * 2014-11-12 2017-12-19 中国科学院深圳先进技术研究院 等离子源系统和等离子生成方法

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US3634704A (en) * 1970-09-02 1972-01-11 Atomic Energy Commission Apparatus for the production of highly stripped ions
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DE2633778C3 (de) * 1976-07-28 1981-12-24 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Ionentriebwerk
JPS55141729A (en) * 1979-04-21 1980-11-05 Nippon Telegr & Teleph Corp <Ntt> Ion-shower device
JPS5669915A (en) * 1979-11-09 1981-06-11 Sony Corp Phase shifter
FR2475798A1 (fr) * 1980-02-13 1981-08-14 Commissariat Energie Atomique Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede
US4447773A (en) * 1981-06-22 1984-05-08 California Institute Of Technology Ion beam accelerator system
JPH0616384B2 (ja) * 1984-06-11 1994-03-02 日本電信電話株式会社 マイクロ波イオン源
JPS6134832A (ja) * 1984-07-26 1986-02-19 Hitachi Ltd 大口径イオン源
JPH0740468B2 (ja) * 1984-12-11 1995-05-01 株式会社日立製作所 高周波プラズマ発生装置
US4774437A (en) * 1986-02-28 1988-09-27 Varian Associates, Inc. Inverted re-entrant magnetron ion source
US4727298A (en) * 1986-07-14 1988-02-23 The United States Of America As Represented By The Department Of Energy Triggered plasma opening switch
US4859908A (en) * 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
DE3632340C2 (de) * 1986-09-24 1998-01-15 Leybold Ag Induktiv angeregte Ionenquelle
DE3718244A1 (de) * 1987-05-30 1988-12-08 Grix Raimund Speicherionenquelle fuer flugzeit-massenspektrometer
JPH01132033A (ja) * 1987-11-17 1989-05-24 Hitachi Ltd イオン源及び薄膜形成装置

Also Published As

Publication number Publication date
EP0349555B1 (de) 1993-06-16
KR960008925B1 (ko) 1996-07-09
WO1988007259A1 (en) 1988-09-22
DK642888D0 (da) 1988-11-17
ATE90811T1 (de) 1993-07-15
DE3708716C2 (de) 1993-11-04
AU1423888A (en) 1988-10-10
EP0349555A1 (de) 1990-01-10
DE3708716A1 (de) 1988-09-29
JP2776855B2 (ja) 1998-07-16
JPH02502594A (ja) 1990-08-16
US5017835A (en) 1991-05-21
DK171662B1 (da) 1997-03-03
KR890700918A (ko) 1989-04-28
DE3881879D1 (de) 1993-07-22

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Legal Events

Date Code Title Description
B1 Patent granted (law 1993)
PBP Patent lapsed