DE969211C - Transistor-Verstaerkerschaltung - Google Patents
Transistor-VerstaerkerschaltungInfo
- Publication number
- DE969211C DE969211C DEN7968A DEN0007968A DE969211C DE 969211 C DE969211 C DE 969211C DE N7968 A DEN7968 A DE N7968A DE N0007968 A DEN0007968 A DE N0007968A DE 969211 C DE969211 C DE 969211C
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- circuit
- electrode
- july
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL318329X | 1952-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE969211C true DE969211C (de) | 1958-05-14 |
Family
ID=19783883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN7968A Expired DE969211C (de) | 1952-11-05 | 1953-11-01 | Transistor-Verstaerkerschaltung |
Country Status (6)
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1079212B (de) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode |
| DE1207509B (de) * | 1962-05-02 | 1965-12-23 | Siemens Ag | Gesteuertes Halbleiterstromtor mit mehreren Zonen |
| DE1213920B (de) * | 1960-01-14 | 1966-04-07 | Asea Ab | Halbleiterbauelement mit fuenf Zonen abwechselnden Leitfaehigkeitstyps |
| DE1225700B (de) * | 1960-01-25 | 1966-09-29 | Westinghouse Electric Corp | Impulserzeugende Halbleitervorrichtung |
| DE1265244B (de) * | 1965-07-03 | 1968-04-04 | Marconi Co Ltd | Kaskode-Hochfrequenz-Transistor-Verstaerker |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3162770A (en) * | 1957-06-06 | 1964-12-22 | Ibm | Transistor structure |
-
0
- NL NLAANVRAGE7117576,A patent/NL173581B/xx unknown
- BE BE523990D patent/BE523990A/xx unknown
-
1953
- 1953-11-01 DE DEN7968A patent/DE969211C/de not_active Expired
- 1953-11-02 GB GB30227/53A patent/GB747695A/en not_active Expired
- 1953-11-03 CH CH318329D patent/CH318329A/de unknown
- 1953-11-03 FR FR1086214D patent/FR1086214A/fr not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1079212B (de) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode |
| DE1213920B (de) * | 1960-01-14 | 1966-04-07 | Asea Ab | Halbleiterbauelement mit fuenf Zonen abwechselnden Leitfaehigkeitstyps |
| DE1225700B (de) * | 1960-01-25 | 1966-09-29 | Westinghouse Electric Corp | Impulserzeugende Halbleitervorrichtung |
| DE1207509B (de) * | 1962-05-02 | 1965-12-23 | Siemens Ag | Gesteuertes Halbleiterstromtor mit mehreren Zonen |
| DE1265244B (de) * | 1965-07-03 | 1968-04-04 | Marconi Co Ltd | Kaskode-Hochfrequenz-Transistor-Verstaerker |
Also Published As
| Publication number | Publication date |
|---|---|
| BE523990A (US08197722-20120612-C00042.png) | |
| FR1086214A (fr) | 1955-02-10 |
| NL173581B (nl) | |
| GB747695A (en) | 1956-04-11 |
| CH318329A (de) | 1956-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2354552B2 (de) | Transistor-Niederfrequenz-Hi-Fi-Leistungsverstärker | |
| DE2850778A1 (de) | Frequenzwandlerschaltung | |
| DE2146418B2 (de) | Gegentaktverstärker mit verbesserter Stromverstärkung bei hohen Frequenzen | |
| DE969211C (de) | Transistor-Verstaerkerschaltung | |
| DE3012965A1 (de) | Verstaerkungsgeregelter verstaerker | |
| DE949422C (de) | Transistorelement und Schaltung mit demselben zum Verstaerken eines elektrischen Signals | |
| DE2213484C3 (de) | Hochfrequenter Breitbandverstärker | |
| DE1109739B (de) | Zwei- bzw. dreistufiger, galvanisch gekoppelter Transistorverstaerker | |
| DE2305291A1 (de) | Signalregelschaltung | |
| DE3003955C2 (de) | Signalverstärkerschaltung mit Ausgangsstrombegrenzung | |
| DE3238254C2 (US08197722-20120612-C00042.png) | ||
| DE1016307B (de) | Verstaerkerkaskadenschaltung mit zwei von einer einzigen Speisequelle gespeisten Stufen | |
| DE2529966B2 (de) | Transistorverstärker | |
| DE2531998C2 (de) | Vorspannungskreis für einen Differentialverstärker | |
| DE2445134B2 (de) | Verstärkerschaltung | |
| DE1449595A1 (de) | Intregrierschaltung | |
| DE1512683C3 (de) | Verstärker mit steuerbarer Verstärkung und einem Feldeffekttransistor | |
| DE2226471C3 (de) | Differential verstärker | |
| DE963617C (de) | Verstaerkerkaskadenschaltung mit einer Transistor- und einer Roehrenstufe | |
| DE1787002A1 (de) | Verstaerkerschaltung zum erzeugen zweier gegenphasiger ausgangssignale aus einem eingangssignal | |
| DE2516100C2 (de) | Verstärkerschaltung | |
| DE931111C (de) | Abgestimmter Verstaerker | |
| DE1933933C2 (de) | Breitbandverstärker für den MHz-Bereich | |
| AT206002B (de) | Schaltungsanordnung | |
| DE966571C (de) | Betriebsschaltung eines Vierzonen-Flaechentransistors |
