CH318329A - Verstärkerschaltung mit Transistoren - Google Patents

Verstärkerschaltung mit Transistoren

Info

Publication number
CH318329A
CH318329A CH318329DA CH318329A CH 318329 A CH318329 A CH 318329A CH 318329D A CH318329D A CH 318329DA CH 318329 A CH318329 A CH 318329A
Authority
CH
Switzerland
Prior art keywords
transistors
amplifier circuit
amplifier
circuit
Prior art date
Application number
Other languages
English (en)
Inventor
Marie Van Overbeek A Wilhelmus
Hendrik Stieltjes Frederik
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH318329A publication Critical patent/CH318329A/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
CH318329D 1952-11-05 1953-11-03 Verstärkerschaltung mit Transistoren CH318329A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL318329X 1952-11-05

Publications (1)

Publication Number Publication Date
CH318329A true CH318329A (de) 1956-12-31

Family

ID=19783883

Family Applications (1)

Application Number Title Priority Date Filing Date
CH318329D CH318329A (de) 1952-11-05 1953-11-03 Verstärkerschaltung mit Transistoren

Country Status (6)

Country Link
BE (1) BE523990A (de)
CH (1) CH318329A (de)
DE (1) DE969211C (de)
FR (1) FR1086214A (de)
GB (1) GB747695A (de)
NL (1) NL173581B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure
DE1079212B (de) * 1958-06-30 1960-04-07 Siemens Ag Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode
NL260007A (de) * 1960-01-14
US3160828A (en) * 1960-01-25 1964-12-08 Westinghouse Electric Corp Radiation sensitive semiconductor oscillating device
DE1207509B (de) * 1962-05-02 1965-12-23 Siemens Ag Gesteuertes Halbleiterstromtor mit mehreren Zonen
GB1098979A (en) * 1965-07-03 1968-01-10 Marconi Co Ltd Improvements in or relating to high frequency transistor amplifiers

Also Published As

Publication number Publication date
NL173581B (nl)
BE523990A (de)
GB747695A (en) 1956-04-11
FR1086214A (fr) 1955-02-10
DE969211C (de) 1958-05-14

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