CH320109A - Transistor - Google Patents

Transistor

Info

Publication number
CH320109A
CH320109A CH320109DA CH320109A CH 320109 A CH320109 A CH 320109A CH 320109D A CH320109D A CH 320109DA CH 320109 A CH320109 A CH 320109A
Authority
CH
Switzerland
Prior art keywords
transistor
Prior art date
Application number
Other languages
English (en)
Inventor
Isaac Pankove Jacques
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of CH320109A publication Critical patent/CH320109A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CH320109D 1952-06-13 1953-06-12 Transistor CH320109A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US293330A US3005132A (en) 1952-06-13 1952-06-13 Transistors

Publications (1)

Publication Number Publication Date
CH320109A true CH320109A (de) 1957-03-15

Family

ID=23128645

Family Applications (1)

Application Number Title Priority Date Filing Date
CH320109D CH320109A (de) 1952-06-13 1953-06-12 Transistor

Country Status (6)

Country Link
US (1) US3005132A (de)
BE (1) BE520597A (de)
CH (1) CH320109A (de)
FR (1) FR1080034A (de)
GB (1) GB739294A (de)
NL (2) NL179061C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208409B (de) * 1961-05-19 1966-01-05 Int Standard Electric Corp Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
US2778980A (en) * 1954-08-30 1957-01-22 Gen Electric High power junction semiconductor device
US3087098A (en) * 1954-10-05 1963-04-23 Motorola Inc Transistor
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2762001A (en) * 1955-03-23 1956-09-04 Globe Union Inc Fused junction transistor assemblies
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
BE555973A (de) * 1956-03-21
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
NL210117A (de) * 1956-08-24
US3047733A (en) * 1957-03-12 1962-07-31 Ibm Multiple output semiconductor logical device
US2981874A (en) * 1957-05-31 1961-04-25 Ibm High speed, high current transistor
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
US3042565A (en) * 1959-01-02 1962-07-03 Sprague Electric Co Preparation of a moated mesa and related semiconducting devices
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
US3265943A (en) * 1962-08-03 1966-08-09 Sprague Electric Co Diffused collector transistor
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
BE489418A (de) * 1948-06-26
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE495936A (de) * 1949-10-11
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
BE537841A (de) * 1954-05-03 1900-01-01
US2845374A (en) * 1955-05-23 1958-07-29 Texas Instruments Inc Semiconductor unit and method of making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208409B (de) * 1961-05-19 1966-01-05 Int Standard Electric Corp Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen

Also Published As

Publication number Publication date
US3005132A (en) 1961-10-17
NL179061C (nl)
GB739294A (en) 1955-10-26
FR1080034A (fr) 1954-12-06
BE520597A (de)
NL113882C (de)

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