DE818654C - Punktkontaktsystem fuer Kristalldioden - Google Patents
Punktkontaktsystem fuer KristalldiodenInfo
- Publication number
- DE818654C DE818654C DEP23304A DEP0023304A DE818654C DE 818654 C DE818654 C DE 818654C DE P23304 A DEP23304 A DE P23304A DE P0023304 A DEP0023304 A DE P0023304A DE 818654 C DE818654 C DE 818654C
- Authority
- DE
- Germany
- Prior art keywords
- cup
- crystal diode
- diode according
- crystal
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004049 embossing Methods 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000002775 capsule Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 210000000056 organ Anatomy 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000003746 feather Anatomy 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical compound [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measuring Leads Or Probes (AREA)
- Springs (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR660382X | 1948-02-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE818654C true DE818654C (de) | 1951-10-25 |
Family
ID=9010217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEP23304A Expired DE818654C (de) | 1948-02-18 | 1948-12-02 | Punktkontaktsystem fuer Kristalldioden |
Country Status (4)
Country | Link |
---|---|
US (1) | US2569570A (enrdf_load_stackoverflow) |
DE (1) | DE818654C (enrdf_load_stackoverflow) |
GB (1) | GB660382A (enrdf_load_stackoverflow) |
NL (2) | NL69303C (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1021490B (de) * | 1953-12-31 | 1957-12-27 | Ibm Deutschland | Transistor mit elastisch angeordneten und dicht benachbarten Spitzenelektroden |
DE1113718B (de) * | 1959-05-15 | 1961-09-14 | Telefunken Patent | Halbleiteranordnung mit kleiner Zuleitungsinduktivitaet |
DE976651C (de) * | 1951-12-05 | 1964-02-20 | Siemens Ag | Kristalldiode fuer sehr hohe Frequenzen |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1051341B (de) * | 1952-03-03 | 1959-02-26 | Ericsson Telefon Ab L M | Kristalldiode fuer Zentimeter- oder Dezimeterwellen |
US2928031A (en) * | 1958-09-04 | 1960-03-08 | Bell Telephone Labor Inc | Contact member for semiconductor translating device |
US3223903A (en) * | 1961-02-24 | 1965-12-14 | Hughes Aircraft Co | Point contact semiconductor device with a lead having low effective ratio of length to diameter |
US3308355A (en) * | 1962-07-30 | 1967-03-07 | Texas Instruments Inc | Point contact diode |
US3231795A (en) * | 1962-10-18 | 1966-01-25 | Bendix Corp | Low inductance and capacitance electrical cartridge and method of manufacture |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US689199A (en) * | 1901-05-02 | 1901-12-17 | Thomas B Kinraide | Electrode. |
AT78069B (de) * | 1916-12-14 | 1919-09-10 | Lorenz C Ag | Kontaktdetektor für die Zwecke der drahtlosen Telegraphie. |
-
0
- NL NL139559D patent/NL139559C/xx active
- NL NL69303D patent/NL69303C/xx active
-
1948
- 1948-12-02 DE DEP23304A patent/DE818654C/de not_active Expired
-
1949
- 1949-02-16 US US76822A patent/US2569570A/en not_active Expired - Lifetime
- 1949-02-18 GB GB4420/49A patent/GB660382A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE976651C (de) * | 1951-12-05 | 1964-02-20 | Siemens Ag | Kristalldiode fuer sehr hohe Frequenzen |
DE1021490B (de) * | 1953-12-31 | 1957-12-27 | Ibm Deutschland | Transistor mit elastisch angeordneten und dicht benachbarten Spitzenelektroden |
DE1113718B (de) * | 1959-05-15 | 1961-09-14 | Telefunken Patent | Halbleiteranordnung mit kleiner Zuleitungsinduktivitaet |
Also Published As
Publication number | Publication date |
---|---|
US2569570A (en) | 1951-10-02 |
GB660382A (en) | 1951-11-07 |
NL139559C (enrdf_load_stackoverflow) | |
NL69303C (enrdf_load_stackoverflow) |
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