DE756025C - Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern - Google Patents

Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern

Info

Publication number
DE756025C
DE756025C DEL95748D DEL0095748D DE756025C DE 756025 C DE756025 C DE 756025C DE L95748 D DEL95748 D DE L95748D DE L0095748 D DEL0095748 D DE L0095748D DE 756025 C DE756025 C DE 756025C
Authority
DE
Germany
Prior art keywords
barrier layer
layer
selenium
semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEL95748D
Other languages
German (de)
English (en)
Inventor
Carl Dr Phil Bosch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AEG AG
Original Assignee
AEG AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEG AG filed Critical AEG AG
Priority to DEA10413D priority Critical patent/DE876278C/de
Priority to DEL95748D priority patent/DE756025C/de
Priority to NL95275A priority patent/NL54474C/xx
Priority to FR886370D priority patent/FR886370A/fr
Priority to FR886371D priority patent/FR886371A/fr
Application granted granted Critical
Publication of DE756025C publication Critical patent/DE756025C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DEL95748D 1938-10-04 1938-10-04 Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern Expired DE756025C (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DEA10413D DE876278C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter
DEL95748D DE756025C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern
NL95275A NL54474C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1938-10-04 1939-09-20
FR886370D FR886370A (fr) 1938-10-04 1942-10-05 Procédé de fabrication de couches de sélénium minces, notamment pour les cellules photoélectriques et les redresseurs secs
FR886371D FR886371A (fr) 1938-10-04 1942-10-05 Procédé d'obtention d'une couche d'arrêt pour redresseurs secs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEA10413D DE876278C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter
DEL95748D DE756025C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern

Publications (1)

Publication Number Publication Date
DE756025C true DE756025C (de) 1952-06-16

Family

ID=25963088

Family Applications (2)

Application Number Title Priority Date Filing Date
DEL95748D Expired DE756025C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern
DEA10413D Expired DE876278C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEA10413D Expired DE876278C (de) 1938-10-04 1938-10-04 Verfahren zur Herstellung von Sperrschichten fuer Halbleiterphotozellen und Trockengleichrichter

Country Status (3)

Country Link
DE (2) DE756025C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (2) FR886370A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL54474C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519162C (de) * 1928-11-01 1931-02-25 Sueddeutsche Telefon App Kabel Elektrisches Ventil mit zwischen Elektroden angeordneter fester Ventilschicht
US1994632A (en) * 1933-05-11 1935-03-19 Bell Telephone Labor Inc Asymmetric conductor
DE643447C (de) * 1933-05-26 1937-04-08 Aeg Trockengleichrichter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519162C (de) * 1928-11-01 1931-02-25 Sueddeutsche Telefon App Kabel Elektrisches Ventil mit zwischen Elektroden angeordneter fester Ventilschicht
US1994632A (en) * 1933-05-11 1935-03-19 Bell Telephone Labor Inc Asymmetric conductor
DE643447C (de) * 1933-05-26 1937-04-08 Aeg Trockengleichrichter

Also Published As

Publication number Publication date
FR886371A (fr) 1943-10-13
NL54474C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1943-05-15
DE876278C (de) 1953-05-11
FR886370A (fr) 1943-10-13

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