DE69926985D1 - Verfahren zur herstellung von diamanten des n-typs mit niedrigem widerstand - Google Patents

Verfahren zur herstellung von diamanten des n-typs mit niedrigem widerstand

Info

Publication number
DE69926985D1
DE69926985D1 DE69926985T DE69926985T DE69926985D1 DE 69926985 D1 DE69926985 D1 DE 69926985D1 DE 69926985 T DE69926985 T DE 69926985T DE 69926985 T DE69926985 T DE 69926985T DE 69926985 D1 DE69926985 D1 DE 69926985D1
Authority
DE
Germany
Prior art keywords
type
low resistance
diamonds
preparing
preparing diamonds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69926985T
Other languages
English (en)
Other versions
DE69926985T2 (de
Inventor
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Application granted granted Critical
Publication of DE69926985D1 publication Critical patent/DE69926985D1/de
Publication of DE69926985T2 publication Critical patent/DE69926985T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C23C14/0611—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69926985T 1998-07-07 1999-06-24 Verfahren zur herstellung von diamanten des n-typs mit niedrigem widerstand Expired - Fee Related DE69926985T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20861198 1998-07-07
JP20861198A JP3568394B2 (ja) 1998-07-07 1998-07-07 低抵抗ｎ型ダイヤモンドの合成法
PCT/JP1999/003383 WO2000001867A1 (fr) 1998-07-07 1999-06-24 Procede de synthese de diamant de type n a faible resistance

Publications (2)

Publication Number Publication Date
DE69926985D1 true DE69926985D1 (de) 2005-10-06
DE69926985T2 DE69926985T2 (de) 2006-07-13

Family

ID=16559091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69926985T Expired - Fee Related DE69926985T2 (de) 1998-07-07 1999-06-24 Verfahren zur herstellung von diamanten des n-typs mit niedrigem widerstand

Country Status (5)

Country Link
US (1) US6340393B1 (de)
EP (1) EP1036863B1 (de)
JP (1) JP3568394B2 (de)
DE (1) DE69926985T2 (de)
WO (1) WO2000001867A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4004205B2 (ja) * 2000-03-23 2007-11-07 独立行政法人科学技術振興機構 低抵抗ｐ型ＳｒＴｉＯ３の製造方法
JP4770105B2 (ja) * 2002-02-07 2011-09-14 住友電気工業株式会社 ｎ型ダイヤモンド半導体
CA2483780A1 (en) * 2002-05-01 2003-11-13 Blacklight Power, Inc. Diamond synthesis
US7049374B2 (en) * 2002-07-18 2006-05-23 Chevron U.S.A. Inc. Heterodiamondoids
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
JP2004095958A (ja) * 2002-09-02 2004-03-25 National Institute For Materials Science 深紫外線センサー
US7224532B2 (en) * 2002-12-06 2007-05-29 Chevron U.S.A. Inc. Optical uses diamondoid-containing materials
FR2848335B1 (fr) * 2002-12-06 2005-10-07 Centre Nat Rech Scient Procede d'elaboration de diamant de type n a haute conductivite electrique
US20050019955A1 (en) * 2003-07-23 2005-01-27 Dahl Jeremy E. Luminescent heterodiamondoids as biological labels
JP4835157B2 (ja) * 2003-11-25 2011-12-14 住友電気工業株式会社 ダイヤモンドｎ型半導体、その製造方法、半導体素子、及び電子放出素子
CN100456490C (zh) * 2003-11-25 2009-01-28 住友电气工业株式会社 金刚石n型半导体及其制造方法、半导体元件及电子发射元件
US7312562B2 (en) * 2004-02-04 2007-12-25 Chevron U.S.A. Inc. Heterodiamondoid-containing field emission devices
DE102004033718A1 (de) 2004-07-13 2006-02-16 Basf Ag Verfahren zur Herstellung von primären Aminen mit einer an ein aliphatisches oder cycloaliphatisches C-Atom gebunden primären Aminogruppe und einer Cyclopropyl-Einheit
US20060017055A1 (en) * 2004-07-23 2006-01-26 Eastman Kodak Company Method for manufacturing a display device with low temperature diamond coatings
US20080193366A1 (en) * 2005-02-03 2008-08-14 National Institue Of Advanced Industrial Science And Technology Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same
US7352584B1 (en) 2005-05-10 2008-04-01 Chien-Min Sung Diamond-like carbon coated devices
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
WO2013103929A1 (en) * 2012-01-06 2013-07-11 Akhan Technologies, Inc. Diamond semiconductor system and method
US9320387B2 (en) * 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9441940B2 (en) 2015-01-21 2016-09-13 Uchicago Argonne, Llc Piezoresistive boron doped diamond nanowire
US9484474B1 (en) 2015-07-02 2016-11-01 Uchicago Argonne, Llc Ultrananocrystalline diamond contacts for electronic devices
US9741561B2 (en) 2015-07-10 2017-08-22 Uchicago Argonne, Llc Transparent nanocrystalline diamond coatings and devices
CN113891954A (zh) 2019-05-29 2022-01-04 朗姆研究公司 通过高功率脉冲低频率rf产生的高选择性、低应力、且低氢的类金刚石碳硬掩模

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6270295A (ja) * 1985-09-24 1987-03-31 Sumitomo Electric Ind Ltd ｎ型半導体ダイヤモンド膜の製造法
JPH02217397A (ja) * 1989-02-15 1990-08-30 Kobe Steel Ltd ｎ型半導体ダイヤモンド薄膜の気相合成法
US5051785A (en) * 1989-06-22 1991-09-24 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
DE69201095T2 (de) * 1991-05-02 1995-05-18 Daido Steel Co Ltd Halbleitereinrichtung für hohen spinpolarisierten Elektronenstrahl.
JPH05117089A (ja) 1991-10-25 1993-05-14 Sumitomo Electric Ind Ltd ダイヤモンドのｎ型及びｐ型の形成方法
JPH05117088A (ja) 1991-10-25 1993-05-14 Sumitomo Electric Ind Ltd ダイヤモンドのｎ型及びｐ型の形成方法
JPH05345696A (ja) 1992-06-16 1993-12-27 Japan Steel Works Ltd:The ダイヤモンド膜の製造方法
JP3374866B2 (ja) 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JPH06214030A (ja) * 1993-01-21 1994-08-05 Sumitomo Electric Ind Ltd ダイヤモンド熱ルミネッセンス線量計およびその製造方法
JP3212442B2 (ja) * 1994-05-09 2001-09-25 三菱重工業株式会社 ダイヤモンド表面吸着水素量の低減方法
JP3232470B2 (ja) 1995-07-02 2001-11-26 科学技術振興事業団 水素化アモルファスカーボンを用いた単結晶ダイヤモンドの合成法
JP3051912B2 (ja) * 1996-09-03 2000-06-12 科学技術庁無機材質研究所長 リンドープダイヤモンドの合成法
CN1119829C (zh) * 1996-09-17 2003-08-27 浜松光子学株式会社 光电阴极及装备有它的电子管
JPH10149986A (ja) 1996-11-21 1998-06-02 Mitsubishi Heavy Ind Ltd ダイヤモンドｎ型半導体膜の製造方法およびその装置
JPH10247624A (ja) * 1997-03-05 1998-09-14 Asahi Chem Ind Co Ltd ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法

Also Published As

Publication number Publication date
DE69926985T2 (de) 2006-07-13
WO2000001867A1 (fr) 2000-01-13
JP2000026194A (ja) 2000-01-25
EP1036863B1 (de) 2005-08-31
EP1036863A4 (de) 2002-11-27
EP1036863A1 (de) 2000-09-20
US6340393B1 (en) 2002-01-22
JP3568394B2 (ja) 2004-09-22

Similar Documents

Publication Publication Date Title
DE69926985D1 (de) Verfahren zur herstellung von diamanten des n-typs mit niedrigem widerstand
DE69941880D1 (de) Verfahren zur herstellung von fluorpolymeren
DE59905881D1 (de) Verfahren zur herstellung von aminen
ATE220658T1 (de) Verbessertes verfahren zur gleichzeitigen herstellung von 6-aminocapronitril und hexamethylendiamin
DE69930540D1 (de) Verfahren zur herstellung von silalkylen-siloxancopolymeren
DE69928903D1 (de) Verfahren zur Herstellung von E-Caprolaktam
DE69909003D1 (de) Verfahren zur Herstellung von Polyamiden
DE69933207D1 (de) Verbessertes verfahren zur herstellung von makroliden
ATE266619T1 (de) Verbessertes verfahren zur herstellung von hexamethylendiamin
DE60104244D1 (de) Verfahren zur Herstellung von Amiden
DE59808528D1 (de) Verfahren zur Herstellung von 3-Glycidyloxypropyltrialkoxysilanen
DE69923801D1 (de) Verfahren zur Herstellung von Aldehyden
DE69918645D1 (de) Verfahren zur Herstellung von Siloxane-Oxyalkylene Coplymeren
DE69909208D1 (de) Verfahren zur Herstellung von Alkylhalogensilanen
DE69935509D1 (de) Verfahren zur herstellung von durchscheinenden zahnersätzen
DE60001015D1 (de) Verfahren zur Herstellung von Canthaxanthin
DE69926449D1 (de) Verfahren zur herstellung von pulvrigem nickel
DE59902618D1 (de) Verfahren zur Herstellung von Arylhydrazinen
ATE251112T1 (de) Verbessertes verfahren zur gleichzeitigen herstellung von 6-aminocapronitril und hexamethylendiamin
DE59905990D1 (de) Verfahren zur Herstellung von Trifluorbenzoesäuren
DE69903398D1 (de) Verfahren zur Herstellung von 2-Alkyl-3-hydroxybenzoesäuren
DE69936449D1 (de) Verfahren zur herstellung von 1,3-disubstituierten-4-oxocyclischen harnstoffen
DE59902434D1 (de) Verfahren zur Herstellung von Isochroman-3-onen
DE60043610D1 (de) Verfahren zur herstellung von l-lysin
DE69920003D1 (de) Verfahren zur herstellung von 1,3-disubstituierten-4-oxocyclischen harnstoffen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee