DE69922868D1 - Epoxidharzzusammensetzungen zur Einkapselung von Halbleitern und damit eingekapselte Halbleiterbauteile - Google Patents

Epoxidharzzusammensetzungen zur Einkapselung von Halbleitern und damit eingekapselte Halbleiterbauteile

Info

Publication number
DE69922868D1
DE69922868D1 DE69922868T DE69922868T DE69922868D1 DE 69922868 D1 DE69922868 D1 DE 69922868D1 DE 69922868 T DE69922868 T DE 69922868T DE 69922868 T DE69922868 T DE 69922868T DE 69922868 D1 DE69922868 D1 DE 69922868D1
Authority
DE
Germany
Prior art keywords
epoxy resin
semiconductor devices
resin compositions
encapsulated semiconductor
encapsulating semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69922868T
Other languages
English (en)
Other versions
DE69922868T2 (de
Inventor
Tatsurou Hirano
Nobukazu Suzuki
Toshio Shiobara
Takayuki Aoki
Shoichi Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Tatsumori Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Tatsumori Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Tatsumori Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69922868D1 publication Critical patent/DE69922868D1/de
Publication of DE69922868T2 publication Critical patent/DE69922868T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C08K7/18—Solid spheres inorganic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Glass Compositions (AREA)
DE69922868T 1998-04-16 1999-04-15 Epoxidharzzusammensetzungen zur Einkapselung von Halbleitern und damit eingekapselte Halbleiterbauteile Expired - Lifetime DE69922868T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12280598A JP3800277B2 (ja) 1998-04-16 1998-04-16 半導体封止用エポキシ樹脂組成物及び半導体装置
JP12280598 1998-04-16

Publications (2)

Publication Number Publication Date
DE69922868D1 true DE69922868D1 (de) 2005-02-03
DE69922868T2 DE69922868T2 (de) 2005-12-15

Family

ID=14845081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69922868T Expired - Lifetime DE69922868T2 (de) 1998-04-16 1999-04-15 Epoxidharzzusammensetzungen zur Einkapselung von Halbleitern und damit eingekapselte Halbleiterbauteile

Country Status (5)

Country Link
US (1) US6221509B1 (de)
EP (1) EP0951070B1 (de)
JP (1) JP3800277B2 (de)
KR (1) KR100445252B1 (de)
DE (1) DE69922868T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332165A (ja) * 1999-05-17 2000-11-30 Toray Ind Inc 半導体封止用樹脂組成物およびそれを用いた半導体装置
US6376923B1 (en) * 1999-06-08 2002-04-23 Shin-Etsu Chemical Co., Ltd. Flip-chip type semiconductor device sealing material and flip-chip type semiconductor device
JP4581232B2 (ja) * 2000-11-27 2010-11-17 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
KR100702566B1 (ko) 2003-04-07 2007-04-04 히다치 가세고교 가부시끼가이샤 밀봉용 에폭시 수지 성형 재료 및 반도체 장치
US7901870B1 (en) 2004-05-12 2011-03-08 Cirrex Systems Llc Adjusting optical properties of optical thin films
US7170188B2 (en) * 2004-06-30 2007-01-30 Intel Corporation Package stress management
US7565084B1 (en) 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
US20060228542A1 (en) * 2005-04-08 2006-10-12 Saint-Gobain Performance Plastics Corporation Thermal interface material having spheroidal particulate filler
JP4386453B2 (ja) 2006-05-31 2009-12-16 信越化学工業株式会社 樹脂封止された半導体装置
JP5038007B2 (ja) * 2007-04-17 2012-10-03 電気化学工業株式会社 組成物、それを用いた金属ベース回路基板
KR100911168B1 (ko) 2007-12-31 2009-08-06 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
JP2010050262A (ja) * 2008-08-21 2010-03-04 Panasonic Corp 半導体装置及びその製造方法
TWI366421B (en) * 2008-08-22 2012-06-11 Nanya Plastics Corp High thermal conductivity, high glass transition temperature (tg) resin composition and its pre-impregnated and coating materials for printed circuit boards
US8580879B2 (en) 2009-01-06 2013-11-12 Nan Ya Plastics Corporation Resin composition of high thermal conductivity and high glass transition temperature (Tg) and for use with PCB, and prepreg and coating thereof
JP5549568B2 (ja) 2009-12-15 2014-07-16 信越化学工業株式会社 光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置
JP2014118461A (ja) * 2012-12-14 2014-06-30 Kyocera Chemical Corp 粉粒状半導体封止用樹脂組成物および半導体装置
JP6351927B2 (ja) * 2012-12-27 2018-07-04 京セラ株式会社 封止用樹脂組成物及び半導体装置の製造方法
KR101902137B1 (ko) * 2014-09-24 2018-09-27 스미토모 베이클리트 컴퍼니 리미티드 반도체 봉지용 수지 조성물, 반도체 장치 및 구조체
DE102015223443A1 (de) 2015-11-26 2017-06-01 Robert Bosch Gmbh Elektrische Vorrichtung mit einer Umhüllmasse
JP6980986B2 (ja) * 2016-04-22 2021-12-15 住友ベークライト株式会社 半導体封止用樹脂組成物および半導体装置
JP6276365B2 (ja) * 2016-10-20 2018-02-07 京セラ株式会社 粉粒状半導体封止用樹脂組成物の融け性評価方法および樹脂封止型半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829858A (ja) * 1981-08-13 1983-02-22 Nitto Electric Ind Co Ltd 電子部品封止用樹脂組成物
JPS5868955A (ja) 1981-10-21 1983-04-25 Hitachi Ltd 半導体封止用樹脂組成物
JPS6185432A (ja) 1984-10-04 1986-05-01 Hitachi Chem Co Ltd 半導体装置封止用エポキシ樹脂成形材料
JPH0280428A (ja) 1988-09-19 1990-03-20 Toshiba Corp マレイミド樹脂組成物及び樹脂封止型半導体装置
JP2526747B2 (ja) * 1991-05-21 1996-08-21 信越化学工業株式会社 エポキシ樹脂組成物及び半導体装置
JPH04349146A (ja) 1991-05-22 1992-12-03 Nippon Electric Glass Co Ltd 低融点高膨張性封着材料
JP3447769B2 (ja) 1993-06-18 2003-09-16 デンツプライ三金株式会社 歯科用埋没材組成物
JP3210837B2 (ja) * 1995-03-31 2001-09-25 京セラ株式会社 配線基板とそれを用いた半導体素子収納用パッケージおよびその実装構造
JP2802908B2 (ja) 1996-02-23 1998-09-24 大成歯科工業株式会社 歯科用埋没材

Also Published As

Publication number Publication date
JPH11302506A (ja) 1999-11-02
EP0951070B1 (de) 2004-12-29
DE69922868T2 (de) 2005-12-15
EP0951070A1 (de) 1999-10-20
JP3800277B2 (ja) 2006-07-26
KR100445252B1 (ko) 2004-08-23
US6221509B1 (en) 2001-04-24
KR19990083224A (ko) 1999-11-25

Similar Documents

Publication Publication Date Title
DE69922868D1 (de) Epoxidharzzusammensetzungen zur Einkapselung von Halbleitern und damit eingekapselte Halbleiterbauteile
DE69821573D1 (de) Epoxidharzzusammensetzung und damit eingekapselte Halbleiteranordnungen
DE69840353D1 (de) Epoxidharzzusammensetzung geeignet zur Verkapselung von Halbleiteranordnungen und harzverkapselte Halbleiteranordnungen
DE69922577D1 (de) Epoxydharzzusammensetzungen und damit eingekapselte Halbleiteranordnungen
DE69722106D1 (de) Epoxidharzzusammensetzung und damit eingekapselte Halbleiteranordnungen
DE60224957D1 (de) Harzzusammensetzung zur Einkapselung von Halbleitern und diese enthaltende Halbleiteranordnungen
DE60044993D1 (de) Epoxydharzzusammensetzung zur Einkapselung von Halbleitern und Halbleiterbauelement
DE69803267T2 (de) Epoxidharzzusammensetzungen für die versiegelung von halbleitern und halbleitervorrichtung
DE69501771T2 (de) Epoxidharzformmasse zur Einkapselung elektronischer Bauelemente und eingekapselte Halbleiteranordnung unter Verwendung dieser Formmasse
DE69727869D1 (de) Anorganischer Füllstoff, Epoxyharzzusammensetzung und Halbleitervorrichtung
DE69202608D1 (de) Epoxydharzzusammensetzungen und damit eingekapselte Halbleiteranordnungen.
DE69603531T2 (de) Epoxyharz, Harzzusammensetzung und Harz-verkapselte Halbleitervorrichtung
SG111042A1 (en) Thermosetting resin composition and semiconductor device using the same
HK1045168B (zh) 半導體密封用樹脂組合物、半導體裝置、半導體晶片、半導體安裝結構體
DE60136525D1 (de) Leiterrahmen und Herstellungsverfahren einer harzverkapselten Halbleiteranordnung mit einem solchen Leiterrahmen
DE69534483D1 (de) Leiterrahmen und Halbleiterbauelement
SG41939A1 (en) Epoxy resin composition for semiconductor encapsulation
SG119150A1 (en) Process for production of epoxy resin composition for semiconductor encapsulation epoxy resin composition for semiconductor encapsulation and semiconductor device
DE69115058D1 (de) Epoxyharzzusammensetzung und damit verkapselte Halbleiteranordnung.
DE69839714D1 (de) Kunststoffpackung und Halbleiteranordnung
DE69510529T2 (de) Strahlungsemittierende halbleiter-diode und herstellungsverfahren
DE69913298D1 (de) Epoxydharzzusammensetzung für die versieglung von halbleitern und damit ausgerüstete halbleitervorrichtung
DE69930110D1 (de) Keramische- harz zusammenstellungen mit magnetische eigenschaften und mit einem eingekapselten halbleiter
DE69817054D1 (de) Epoxidharzzusammensetzung und eine harzverkapselte Halbleiteranordnung
DE60020516D1 (de) Epoxidharzzusammensetzung und halbleitervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition