DE69918219T2 - Methode zur Verbesserung der Stöpsel-Leitfähigkeit - Google Patents
Methode zur Verbesserung der Stöpsel-Leitfähigkeit Download PDFInfo
- Publication number
- DE69918219T2 DE69918219T2 DE69918219T DE69918219T DE69918219T2 DE 69918219 T2 DE69918219 T2 DE 69918219T2 DE 69918219 T DE69918219 T DE 69918219T DE 69918219 T DE69918219 T DE 69918219T DE 69918219 T2 DE69918219 T2 DE 69918219T2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- plug
- oxide
- diffusion barrier
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000003990 capacitor Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- -1 germanium ions Chemical class 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 40
- 238000009792 diffusion process Methods 0.000 description 37
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74882 | 1987-07-17 | ||
| US09/074,882 US6046059A (en) | 1998-05-08 | 1998-05-08 | Method of forming stack capacitor with improved plug conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69918219D1 DE69918219D1 (de) | 2004-07-29 |
| DE69918219T2 true DE69918219T2 (de) | 2005-07-28 |
Family
ID=22122235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69918219T Expired - Lifetime DE69918219T2 (de) | 1998-05-08 | 1999-04-12 | Methode zur Verbesserung der Stöpsel-Leitfähigkeit |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6046059A (OSRAM) |
| EP (1) | EP0955679B1 (OSRAM) |
| JP (1) | JP2000031418A (OSRAM) |
| KR (1) | KR100372404B1 (OSRAM) |
| CN (1) | CN1235368A (OSRAM) |
| DE (1) | DE69918219T2 (OSRAM) |
| TW (1) | TW410429B (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6174799B1 (en) * | 1999-01-05 | 2001-01-16 | Advanced Micro Devices, Inc. | Graded compound seed layers for semiconductors |
| US6214661B1 (en) * | 2000-01-21 | 2001-04-10 | Infineon Technologoies North America Corp. | Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device |
| US6624076B1 (en) * | 2000-01-21 | 2003-09-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| US6358855B1 (en) | 2000-06-16 | 2002-03-19 | Infineon Technologies Ag | Clean method for recessed conductive barriers |
| US6297123B1 (en) * | 2000-11-29 | 2001-10-02 | United Microelectronics Corp. | Method of preventing neck oxidation of a storage node |
| US6432725B1 (en) | 2001-09-28 | 2002-08-13 | Infineon Technologies Ag | Methods for crystallizing metallic oxide dielectric films at low temperature |
| US6515325B1 (en) * | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
| US7231839B2 (en) * | 2003-08-11 | 2007-06-19 | The Board Of Trustees Of The Leland Stanford Junior University | Electroosmotic micropumps with applications to fluid dispensing and field sampling |
| US7927948B2 (en) * | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| WO2024257388A1 (ja) * | 2023-06-16 | 2024-12-19 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| US5504041A (en) * | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
| US6093615A (en) * | 1994-08-15 | 2000-07-25 | Micron Technology, Inc. | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug |
| JPH0945877A (ja) * | 1995-07-31 | 1997-02-14 | Matsushita Electron Corp | 容量素子の製造方法 |
| JP3388089B2 (ja) * | 1996-04-25 | 2003-03-17 | シャープ株式会社 | 不揮発性半導体メモリ素子の製造方法 |
| KR100226772B1 (ko) * | 1996-09-25 | 1999-10-15 | 김영환 | 반도체 메모리 장치 및 그 제조방법 |
| KR100445059B1 (ko) * | 1997-06-30 | 2004-11-16 | 주식회사 하이닉스반도체 | 반도체장치의캐패시터제조방법 |
-
1998
- 1998-05-08 US US09/074,882 patent/US6046059A/en not_active Expired - Lifetime
-
1999
- 1999-04-12 EP EP99107089A patent/EP0955679B1/en not_active Expired - Lifetime
- 1999-04-12 DE DE69918219T patent/DE69918219T2/de not_active Expired - Lifetime
- 1999-05-06 KR KR10-1999-0016143A patent/KR100372404B1/ko not_active Expired - Fee Related
- 1999-05-07 CN CN99106356A patent/CN1235368A/zh active Pending
- 1999-05-07 JP JP11127655A patent/JP2000031418A/ja active Pending
- 1999-07-06 TW TW088107286A patent/TW410429B/zh not_active IP Right Cessation
-
2000
- 2000-01-06 US US09/478,312 patent/US6313495B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990088068A (ko) | 1999-12-27 |
| EP0955679B1 (en) | 2004-06-23 |
| US6313495B1 (en) | 2001-11-06 |
| US6046059A (en) | 2000-04-04 |
| DE69918219D1 (de) | 2004-07-29 |
| TW410429B (en) | 2000-11-01 |
| CN1235368A (zh) | 1999-11-17 |
| EP0955679A2 (en) | 1999-11-10 |
| EP0955679A3 (en) | 2002-01-16 |
| JP2000031418A (ja) | 2000-01-28 |
| KR100372404B1 (ko) | 2003-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |