JP2000031418A - 積層型キャパシタ中の電極とプラグとの間の導電率を改善する方法及び積層型キャパシタ - Google Patents
積層型キャパシタ中の電極とプラグとの間の導電率を改善する方法及び積層型キャパシタInfo
- Publication number
- JP2000031418A JP2000031418A JP11127655A JP12765599A JP2000031418A JP 2000031418 A JP2000031418 A JP 2000031418A JP 11127655 A JP11127655 A JP 11127655A JP 12765599 A JP12765599 A JP 12765599A JP 2000031418 A JP2000031418 A JP 2000031418A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plug
- multilayer capacitor
- bombarding
- diffusion barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 64
- 238000009792 diffusion process Methods 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims abstract description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- -1 germanium ions Chemical class 0.000 claims description 4
- 229910004200 TaSiN Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/074,882 US6046059A (en) | 1998-05-08 | 1998-05-08 | Method of forming stack capacitor with improved plug conductivity |
| US09/074882 | 1998-05-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000031418A true JP2000031418A (ja) | 2000-01-28 |
| JP2000031418A5 JP2000031418A5 (OSRAM) | 2005-04-14 |
Family
ID=22122235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11127655A Pending JP2000031418A (ja) | 1998-05-08 | 1999-05-07 | 積層型キャパシタ中の電極とプラグとの間の導電率を改善する方法及び積層型キャパシタ |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6046059A (OSRAM) |
| EP (1) | EP0955679B1 (OSRAM) |
| JP (1) | JP2000031418A (OSRAM) |
| KR (1) | KR100372404B1 (OSRAM) |
| CN (1) | CN1235368A (OSRAM) |
| DE (1) | DE69918219T2 (OSRAM) |
| TW (1) | TW410429B (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024257388A1 (ja) * | 2023-06-16 | 2024-12-19 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6174799B1 (en) * | 1999-01-05 | 2001-01-16 | Advanced Micro Devices, Inc. | Graded compound seed layers for semiconductors |
| US6214661B1 (en) * | 2000-01-21 | 2001-04-10 | Infineon Technologoies North America Corp. | Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device |
| US6624076B1 (en) * | 2000-01-21 | 2003-09-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| US6358855B1 (en) | 2000-06-16 | 2002-03-19 | Infineon Technologies Ag | Clean method for recessed conductive barriers |
| US6297123B1 (en) * | 2000-11-29 | 2001-10-02 | United Microelectronics Corp. | Method of preventing neck oxidation of a storage node |
| US6432725B1 (en) | 2001-09-28 | 2002-08-13 | Infineon Technologies Ag | Methods for crystallizing metallic oxide dielectric films at low temperature |
| US6515325B1 (en) * | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
| US7231839B2 (en) * | 2003-08-11 | 2007-06-19 | The Board Of Trustees Of The Leland Stanford Junior University | Electroosmotic micropumps with applications to fluid dispensing and field sampling |
| US7927948B2 (en) * | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| US5504041A (en) * | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
| US6093615A (en) * | 1994-08-15 | 2000-07-25 | Micron Technology, Inc. | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug |
| JPH0945877A (ja) * | 1995-07-31 | 1997-02-14 | Matsushita Electron Corp | 容量素子の製造方法 |
| JP3388089B2 (ja) * | 1996-04-25 | 2003-03-17 | シャープ株式会社 | 不揮発性半導体メモリ素子の製造方法 |
| KR100226772B1 (ko) * | 1996-09-25 | 1999-10-15 | 김영환 | 반도체 메모리 장치 및 그 제조방법 |
| KR100445059B1 (ko) * | 1997-06-30 | 2004-11-16 | 주식회사 하이닉스반도체 | 반도체장치의캐패시터제조방법 |
-
1998
- 1998-05-08 US US09/074,882 patent/US6046059A/en not_active Expired - Lifetime
-
1999
- 1999-04-12 EP EP99107089A patent/EP0955679B1/en not_active Expired - Lifetime
- 1999-04-12 DE DE69918219T patent/DE69918219T2/de not_active Expired - Lifetime
- 1999-05-06 KR KR10-1999-0016143A patent/KR100372404B1/ko not_active Expired - Fee Related
- 1999-05-07 CN CN99106356A patent/CN1235368A/zh active Pending
- 1999-05-07 JP JP11127655A patent/JP2000031418A/ja active Pending
- 1999-07-06 TW TW088107286A patent/TW410429B/zh not_active IP Right Cessation
-
2000
- 2000-01-06 US US09/478,312 patent/US6313495B1/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024257388A1 (ja) * | 2023-06-16 | 2024-12-19 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| JP7632764B1 (ja) * | 2023-06-16 | 2025-02-19 | 株式会社村田製作所 | キャパシタ |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990088068A (ko) | 1999-12-27 |
| EP0955679B1 (en) | 2004-06-23 |
| US6313495B1 (en) | 2001-11-06 |
| US6046059A (en) | 2000-04-04 |
| DE69918219D1 (de) | 2004-07-29 |
| TW410429B (en) | 2000-11-01 |
| CN1235368A (zh) | 1999-11-17 |
| EP0955679A2 (en) | 1999-11-10 |
| DE69918219T2 (de) | 2005-07-28 |
| EP0955679A3 (en) | 2002-01-16 |
| KR100372404B1 (ko) | 2003-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040608 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040608 |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071210 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071213 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080806 |