DE69911109T2 - Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände - Google Patents
Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände Download PDFInfo
- Publication number
- DE69911109T2 DE69911109T2 DE69911109T DE69911109T DE69911109T2 DE 69911109 T2 DE69911109 T2 DE 69911109T2 DE 69911109 T DE69911109 T DE 69911109T DE 69911109 T DE69911109 T DE 69911109T DE 69911109 T2 DE69911109 T2 DE 69911109T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- deposition
- silicon carbide
- zone
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 72
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 37
- 238000000151 deposition Methods 0.000 claims description 93
- 230000008021 deposition Effects 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 58
- 238000002955 isolation Methods 0.000 claims description 38
- 239000007787 solid Substances 0.000 claims description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910002804 graphite Inorganic materials 0.000 description 14
- 239000010439 graphite Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 239000005055 methyl trichlorosilane Substances 0.000 description 4
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 230000000750 progressive effect Effects 0.000 description 3
- 239000012713 reactive precursor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000010961 commercial manufacture process Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/072,927 US6228297B1 (en) | 1998-05-05 | 1998-05-05 | Method for producing free-standing silicon carbide articles |
| US72927 | 1998-05-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69911109D1 DE69911109D1 (de) | 2003-10-16 |
| DE69911109T2 true DE69911109T2 (de) | 2004-07-15 |
Family
ID=22110603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69911109T Expired - Fee Related DE69911109T2 (de) | 1998-05-05 | 1999-04-29 | Verfahren und Vorrichtung zur Herstellung freistehender Siliciumcarbidgegenstände |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US6228297B1 (enExample) |
| EP (1) | EP0955278B1 (enExample) |
| JP (1) | JP4610683B2 (enExample) |
| DE (1) | DE69911109T2 (enExample) |
| IL (1) | IL129774A0 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464912B1 (en) * | 1999-01-06 | 2002-10-15 | Cvd, Incorporated | Method for producing near-net shape free standing articles by chemical vapor deposition |
| WO2001041203A1 (en) * | 1999-11-30 | 2001-06-07 | Intel Corporation | Improved flourine doped sio2 film |
| US6616870B1 (en) * | 2000-08-07 | 2003-09-09 | Shipley Company, L.L.C. | Method of producing high aspect ratio domes by vapor deposition |
| EP1205573A1 (en) * | 2000-11-10 | 2002-05-15 | Shipley Company LLC | Silicon carbide with high thermal conductivity |
| US6811040B2 (en) * | 2001-07-16 | 2004-11-02 | Rohm And Haas Company | Wafer holding apparatus |
| JP4064315B2 (ja) * | 2003-08-20 | 2008-03-19 | 信越化学工業株式会社 | 誘導結合プラズマトーチ及び元素分析装置 |
| US8114505B2 (en) * | 2003-12-05 | 2012-02-14 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
| US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
| US20060057287A1 (en) * | 2003-12-08 | 2006-03-16 | Incomplete Trex Enterprises Corp | Method of making chemical vapor composites |
| US20070207268A1 (en) * | 2003-12-08 | 2007-09-06 | Webb R K | Ribbed CVC structures and methods of producing |
| US20060228474A1 (en) * | 2004-10-12 | 2006-10-12 | Colby Foss | Leading edge components for high speed air and space craft |
| US20100032857A1 (en) * | 2005-02-28 | 2010-02-11 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic components, coated structures and methods for making same |
| US7828158B2 (en) * | 2005-07-14 | 2010-11-09 | Displays Plus, Inc. | Merchandise dispensing apparatus providing theft deterrence |
| JP2007329476A (ja) * | 2006-06-02 | 2007-12-20 | Rohm & Haas Electronic Materials Llc | フィレット半径結合部を有する装置 |
| US8079698B2 (en) * | 2006-07-31 | 2011-12-20 | Brother Kogyo Kabushiki Kaisha | Inkjet recording apparatus |
| US8105649B1 (en) * | 2007-08-09 | 2012-01-31 | Imaging Systems Technology | Fabrication of silicon carbide shell |
| EP2541559B1 (en) | 2011-06-30 | 2014-03-26 | Rohm and Haas Electronic Materials LLC | Transparent conductive articles |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2050076C3 (de) * | 1970-10-12 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial |
| DE2229229A1 (de) * | 1972-06-15 | 1974-01-10 | Siemens Ag | Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern |
| JPS5818349B2 (ja) * | 1975-06-25 | 1983-04-12 | ノ−トン カンパニ− | 気体不透過性中空炭化ケイ素成形品およびその製造方法 |
| JPS6035994B2 (ja) * | 1978-07-10 | 1985-08-17 | 日本ピラ−工業株式会社 | 複合部材の製造方法 |
| US4339645A (en) * | 1980-07-03 | 1982-07-13 | Rca Corporation | RF Heating coil construction for stack of susceptors |
| US5154862A (en) * | 1986-03-07 | 1992-10-13 | Thermo Electron Corporation | Method of forming composite articles from CVD gas streams and solid particles of fibers |
| US5071685A (en) * | 1986-11-07 | 1991-12-10 | Kasprzyk Martin R | Ceramic articles, methods and apparatus for their manufacture |
| US4999228A (en) * | 1988-05-06 | 1991-03-12 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide diffusion tube for semi-conductor |
| US4895108A (en) * | 1988-06-22 | 1990-01-23 | The Babcock & Wilcox Company | CVD apparatus and process for the preparation of fiber-reinforced ceramic composites |
| US4963393A (en) | 1989-09-07 | 1990-10-16 | Cvd Incorporated | Method to prevent backside growth on substrates in a vapor deposition system |
| US4997678A (en) | 1989-10-23 | 1991-03-05 | Cvd Incorporated | Chemical vapor deposition process to replicate the finish and figure of preshaped structures |
| US5071596A (en) | 1989-10-23 | 1991-12-10 | Cvd Incorporated | Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process |
| US4990374A (en) | 1989-11-28 | 1991-02-05 | Cvd Incorporated | Selective area chemical vapor deposition |
| IL100743A (en) * | 1992-01-23 | 1994-11-28 | Yeda Res & Dev | Central solar collector |
| US5374412A (en) | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
| US5538230A (en) * | 1994-08-08 | 1996-07-23 | Sibley; Thomas | Silicon carbide carrier for wafer processing |
| US5443649A (en) * | 1994-11-22 | 1995-08-22 | Sibley; Thomas | Silicon carbide carrier for wafer processing in vertical furnaces |
| US5476549A (en) * | 1995-01-24 | 1995-12-19 | Cvd, Inc. | Process for an improved laminate of ZnSe and ZnS |
| US5635244A (en) * | 1995-08-28 | 1997-06-03 | Lsi Logic Corporation | Method of forming a layer of material on a wafer |
| US5683507A (en) | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
| US5720933A (en) * | 1996-03-11 | 1998-02-24 | Srinivasan; Makuteswara | Process for preparing ceramic fibers |
| US5683028A (en) | 1996-05-03 | 1997-11-04 | Cvd, Incorporated | Bonding of silicon carbide components |
| JPH1017382A (ja) * | 1996-06-28 | 1998-01-20 | Mitsubishi Pencil Co Ltd | 炭化珪素成形体の製造方法 |
| US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| JP3596710B2 (ja) * | 1996-09-10 | 2004-12-02 | 信越半導体株式会社 | 気相成長装置用サセプタ |
| JP2891978B1 (ja) * | 1998-02-17 | 1999-05-17 | 日本ピラー工業株式会社 | 炭化珪素質構造体 |
-
1998
- 1998-05-05 US US09/072,927 patent/US6228297B1/en not_active Expired - Fee Related
-
1999
- 1999-04-29 EP EP99303374A patent/EP0955278B1/en not_active Expired - Lifetime
- 1999-04-29 DE DE69911109T patent/DE69911109T2/de not_active Expired - Fee Related
- 1999-04-30 JP JP12364099A patent/JP4610683B2/ja not_active Expired - Fee Related
- 1999-05-04 IL IL12977499A patent/IL129774A0/xx unknown
-
2001
- 2001-05-30 US US09/870,242 patent/US20010022408A1/en not_active Abandoned
-
2003
- 2003-03-22 US US10/394,110 patent/US20030178735A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20030178735A1 (en) | 2003-09-25 |
| US20010022408A1 (en) | 2001-09-20 |
| EP0955278A2 (en) | 1999-11-10 |
| IL129774A0 (en) | 2000-02-29 |
| EP0955278A3 (en) | 1999-12-15 |
| DE69911109D1 (de) | 2003-10-16 |
| EP0955278B1 (en) | 2003-09-10 |
| JP2000087239A (ja) | 2000-03-28 |
| US6228297B1 (en) | 2001-05-08 |
| JP4610683B2 (ja) | 2011-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |