JP4610683B2 - 支持なしに立つ炭化ケイ素物品を製造する方法及び装置 - Google Patents

支持なしに立つ炭化ケイ素物品を製造する方法及び装置 Download PDF

Info

Publication number
JP4610683B2
JP4610683B2 JP12364099A JP12364099A JP4610683B2 JP 4610683 B2 JP4610683 B2 JP 4610683B2 JP 12364099 A JP12364099 A JP 12364099A JP 12364099 A JP12364099 A JP 12364099A JP 4610683 B2 JP4610683 B2 JP 4610683B2
Authority
JP
Japan
Prior art keywords
substrate
silicon carbide
deposit
wall
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12364099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000087239A (ja
JP2000087239A5 (enExample
Inventor
シン ゴーラ ジテンドラ
エー．ピッカーリング マイケル
Original Assignee
シーブイディー，インコーポレイティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シーブイディー，インコーポレイティド filed Critical シーブイディー，インコーポレイティド
Publication of JP2000087239A publication Critical patent/JP2000087239A/ja
Publication of JP2000087239A5 publication Critical patent/JP2000087239A5/ja
Application granted granted Critical
Publication of JP4610683B2 publication Critical patent/JP4610683B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP12364099A 1998-05-05 1999-04-30 支持なしに立つ炭化ケイ素物品を製造する方法及び装置 Expired - Fee Related JP4610683B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/072927 1998-05-05
US09/072,927 US6228297B1 (en) 1998-05-05 1998-05-05 Method for producing free-standing silicon carbide articles

Publications (3)

Publication Number Publication Date
JP2000087239A JP2000087239A (ja) 2000-03-28
JP2000087239A5 JP2000087239A5 (enExample) 2006-05-18
JP4610683B2 true JP4610683B2 (ja) 2011-01-12

Family

ID=22110603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12364099A Expired - Fee Related JP4610683B2 (ja) 1998-05-05 1999-04-30 支持なしに立つ炭化ケイ素物品を製造する方法及び装置

Country Status (5)

Country Link
US (3) US6228297B1 (enExample)
EP (1) EP0955278B1 (enExample)
JP (1) JP4610683B2 (enExample)
DE (1) DE69911109T2 (enExample)
IL (1) IL129774A0 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6464912B1 (en) * 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
HK1046331B (zh) * 1999-11-30 2004-12-10 Intel Corporation 改良氟掺杂的sio2软片
US6616870B1 (en) * 2000-08-07 2003-09-09 Shipley Company, L.L.C. Method of producing high aspect ratio domes by vapor deposition
US6811761B2 (en) 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
US6811040B2 (en) * 2001-07-16 2004-11-02 Rohm And Haas Company Wafer holding apparatus
JP4064315B2 (ja) * 2003-08-20 2008-03-19 信越化学工業株式会社 誘導結合プラズマトーチ及び元素分析装置
US20100297350A1 (en) * 2003-12-05 2010-11-25 David Thomas Forrest Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
US20050123713A1 (en) * 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
US20060057287A1 (en) * 2003-12-08 2006-03-16 Incomplete Trex Enterprises Corp Method of making chemical vapor composites
US20070207268A1 (en) * 2003-12-08 2007-09-06 Webb R K Ribbed CVC structures and methods of producing
US20060228474A1 (en) * 2004-10-12 2006-10-12 Colby Foss Leading edge components for high speed air and space craft
US20100032857A1 (en) * 2005-02-28 2010-02-11 Saint-Gobain Ceramics & Plastics, Inc. Ceramic components, coated structures and methods for making same
US7828158B2 (en) * 2005-07-14 2010-11-09 Displays Plus, Inc. Merchandise dispensing apparatus providing theft deterrence
US20080000851A1 (en) * 2006-06-02 2008-01-03 Rohm And Haas Electronic Materials Llc Apparatus with fillet radius joints
US8079698B2 (en) * 2006-07-31 2011-12-20 Brother Kogyo Kabushiki Kaisha Inkjet recording apparatus
US8105649B1 (en) * 2007-08-09 2012-01-31 Imaging Systems Technology Fabrication of silicon carbide shell
IL220677A (en) 2011-06-30 2017-02-28 Rohm & Haas Elect Mat Transparent conductive items

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
DE2229229A1 (de) * 1972-06-15 1974-01-10 Siemens Ag Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern
JPS5818349B2 (ja) * 1975-06-25 1983-04-12 ノ−トン カンパニ− 気体不透過性中空炭化ケイ素成形品およびその製造方法
JPS6035994B2 (ja) * 1978-07-10 1985-08-17 日本ピラ−工業株式会社 複合部材の製造方法
US4339645A (en) * 1980-07-03 1982-07-13 Rca Corporation RF Heating coil construction for stack of susceptors
US5154862A (en) * 1986-03-07 1992-10-13 Thermo Electron Corporation Method of forming composite articles from CVD gas streams and solid particles of fibers
US5071685A (en) * 1986-11-07 1991-12-10 Kasprzyk Martin R Ceramic articles, methods and apparatus for their manufacture
US4999228A (en) * 1988-05-06 1991-03-12 Shin-Etsu Chemical Co., Ltd. Silicon carbide diffusion tube for semi-conductor
US4895108A (en) * 1988-06-22 1990-01-23 The Babcock & Wilcox Company CVD apparatus and process for the preparation of fiber-reinforced ceramic composites
US4963393A (en) * 1989-09-07 1990-10-16 Cvd Incorporated Method to prevent backside growth on substrates in a vapor deposition system
US4997678A (en) 1989-10-23 1991-03-05 Cvd Incorporated Chemical vapor deposition process to replicate the finish and figure of preshaped structures
US5071596A (en) 1989-10-23 1991-12-10 Cvd Incorporated Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process
US4990374A (en) 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
IL100743A (en) * 1992-01-23 1994-11-28 Yeda Res & Dev Central solar collector
US5374412A (en) 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide
US5538230A (en) * 1994-08-08 1996-07-23 Sibley; Thomas Silicon carbide carrier for wafer processing
US5443649A (en) * 1994-11-22 1995-08-22 Sibley; Thomas Silicon carbide carrier for wafer processing in vertical furnaces
US5476549A (en) * 1995-01-24 1995-12-19 Cvd, Inc. Process for an improved laminate of ZnSe and ZnS
US5635244A (en) * 1995-08-28 1997-06-03 Lsi Logic Corporation Method of forming a layer of material on a wafer
US5683507A (en) 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5720933A (en) * 1996-03-11 1998-02-24 Srinivasan; Makuteswara Process for preparing ceramic fibers
US5683028A (en) 1996-05-03 1997-11-04 Cvd, Incorporated Bonding of silicon carbide components
JPH1017382A (ja) * 1996-06-28 1998-01-20 Mitsubishi Pencil Co Ltd 炭化珪素成形体の製造方法
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
JP3596710B2 (ja) * 1996-09-10 2004-12-02 信越半導体株式会社 気相成長装置用サセプタ
JP2891978B1 (ja) * 1998-02-17 1999-05-17 日本ピラー工業株式会社 炭化珪素質構造体

Also Published As

Publication number Publication date
JP2000087239A (ja) 2000-03-28
US20030178735A1 (en) 2003-09-25
IL129774A0 (en) 2000-02-29
EP0955278B1 (en) 2003-09-10
DE69911109D1 (de) 2003-10-16
DE69911109T2 (de) 2004-07-15
EP0955278A3 (en) 1999-12-15
EP0955278A2 (en) 1999-11-10
US6228297B1 (en) 2001-05-08
US20010022408A1 (en) 2001-09-20

Similar Documents

Publication Publication Date Title
JP4610683B2 (ja) 支持なしに立つ炭化ケイ素物品を製造する方法及び装置
US5354580A (en) Triangular deposition chamber for a vapor deposition system
KR101492648B1 (ko) 다공성 재료의 치밀화를 위한 장치
JP4619473B2 (ja) 化学蒸着によるニアネットシェープフリースタンディング物品の製造方法
US5387447A (en) Method for producing uniform cylindrical tubes of CVD diamond
US20050123713A1 (en) Articles formed by chemical vapor deposition and methods for their manufacture
CN102230167A (zh) 化学气相沉积设备
US20060057287A1 (en) Method of making chemical vapor composites
TW555877B (en) A method of producing high aspect ratio domes by vapor deposition
JPS62167294A (ja) 気相法によるダイヤモンド薄膜の製造法
JPH05267182A (ja) 化学気相成長装置
US20060228474A1 (en) Leading edge components for high speed air and space craft
JPS6236089A (ja) セラミツクス製品の製造方法
JPH11335840A (ja) 化学蒸着による精密な再現法
JPH0585761A (ja) 多孔質ガラス母材
JPH0611486B2 (ja) セラミツクス製管状部材の製造方法
JPH0784332B2 (ja) 光フアイバ用ガラス母材の製造方法
JPS61222914A (ja) 熱分解炭素製品の製造法
JPH0635659B2 (ja) 超硬非晶質カ−ボンの製造方法
JPH084075B2 (ja) 気相成長装置
JPS63190735A (ja) ガラス微粒子堆積体の製造方法
JPH07144318A (ja) 気相反応によるシリコンチューブの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20050825

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050825

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050825

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060328

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060328

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090617

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090916

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100510

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100922

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101013

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131022

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees