DE69839570D1 - Halbleiteranordnung und dessen betriebsverfahren - Google Patents

Halbleiteranordnung und dessen betriebsverfahren

Info

Publication number
DE69839570D1
DE69839570D1 DE69839570T DE69839570T DE69839570D1 DE 69839570 D1 DE69839570 D1 DE 69839570D1 DE 69839570 T DE69839570 T DE 69839570T DE 69839570 T DE69839570 T DE 69839570T DE 69839570 D1 DE69839570 D1 DE 69839570D1
Authority
DE
Germany
Prior art keywords
operating process
semiconductor arrangement
semiconductor
arrangement
operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69839570T
Other languages
English (en)
Inventor
Kenji Oota
Kazuhiro Morishita
Katsumi Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69839570D1 publication Critical patent/DE69839570D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69839570T 1998-09-10 1998-09-10 Halbleiteranordnung und dessen betriebsverfahren Expired - Lifetime DE69839570D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/004057 WO2000016405A1 (fr) 1998-09-10 1998-09-10 Dispositif semi-conducteur et procede de commande d'un tel dispositif

Publications (1)

Publication Number Publication Date
DE69839570D1 true DE69839570D1 (de) 2008-07-10

Family

ID=14208953

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69839570T Expired - Lifetime DE69839570D1 (de) 1998-09-10 1998-09-10 Halbleiteranordnung und dessen betriebsverfahren

Country Status (5)

Country Link
US (1) US6521918B2 (de)
EP (2) EP1746660B1 (de)
JP (1) JP4188428B2 (de)
DE (1) DE69839570D1 (de)
WO (1) WO2000016405A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594490A (zh) * 2012-08-13 2014-02-19 无锡维赛半导体有限公司 晶闸管及晶闸管封装件

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
US5428228A (en) * 1991-06-10 1995-06-27 Kabushiki Kaisha Toshiba Method of operating thyristor with insulated gates
US5475243A (en) * 1991-07-02 1995-12-12 Fuji Electric Co., Ltd. Semiconductor device including an IGBT and a current-regenerative diode
JP3110101B2 (ja) * 1991-09-27 2000-11-20 株式会社東芝 絶縁ゲート付ターンオフサイリスタ
JP2562854B2 (ja) * 1991-10-15 1996-12-11 松下電工株式会社 制御ゲート付きｐｎｐｎサイリスタ
JP2793936B2 (ja) * 1992-11-25 1998-09-03 松下電工株式会社 絶縁ゲート型サイリスタ
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
JPH0722608A (ja) * 1993-06-17 1995-01-24 Hitachi Ltd サイリスタおよび電力制御用装置
US5446295A (en) * 1993-08-23 1995-08-29 Siemens Components, Inc. Silicon controlled rectifier with a variable base-shunt resistant
DE4402877C2 (de) * 1994-02-01 1995-12-14 Daimler Benz Ag Durch MOS-Gate schaltbares Leistungshalbleiterbauelement
JP3481287B2 (ja) * 1994-02-24 2003-12-22 三菱電機株式会社 半導体装置の製造方法
JPH07335858A (ja) * 1994-06-08 1995-12-22 Fuji Electric Co Ltd 絶縁ゲートサイリスタおよびその制御方法
JP3211604B2 (ja) * 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置
US5777346A (en) * 1996-01-16 1998-07-07 Harris Corporation Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench
FR2750536B1 (fr) * 1996-06-28 1998-12-18 Sgs Thomson Microelectronics Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee
WO1998012756A1 (fr) * 1996-09-19 1998-03-26 Ngk Insulators, Ltd. Dispositif a semi-conducteurs et procede de fabrication

Also Published As

Publication number Publication date
JP4188428B2 (ja) 2008-11-26
EP1746660A3 (de) 2010-12-01
WO2000016405A1 (fr) 2000-03-23
EP1030374A1 (de) 2000-08-23
EP1746660A2 (de) 2007-01-24
US6521918B2 (en) 2003-02-18
EP1030374B1 (de) 2008-05-28
US20020105006A1 (en) 2002-08-08
EP1030374A4 (de) 2006-01-04
EP1746660B1 (de) 2012-06-13

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