DE69824877D1 - Verfahren zur herstellung einer siliziumschmelze von einem polykristallinen siliziumchargiergut - Google Patents

Verfahren zur herstellung einer siliziumschmelze von einem polykristallinen siliziumchargiergut

Info

Publication number
DE69824877D1
DE69824877D1 DE69824877T DE69824877T DE69824877D1 DE 69824877 D1 DE69824877 D1 DE 69824877D1 DE 69824877 T DE69824877 T DE 69824877T DE 69824877 T DE69824877 T DE 69824877T DE 69824877 D1 DE69824877 D1 DE 69824877D1
Authority
DE
Germany
Prior art keywords
producing
polycrystalline silicon
charging material
silicon charging
silicone melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69824877T
Other languages
English (en)
Other versions
DE69824877T2 (de
Inventor
D Holder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69824877D1 publication Critical patent/DE69824877D1/de
Publication of DE69824877T2 publication Critical patent/DE69824877T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69824877T 1997-10-16 1998-10-07 Verfahren zur herstellung einer siliziumschmelze von einem polykristallinen siliziumchargiergut Expired - Lifetime DE69824877T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US951264 1997-10-16
US08/951,264 US5919303A (en) 1997-10-16 1997-10-16 Process for preparing a silicon melt from a polysilicon charge
PCT/US1998/021114 WO1999020815A1 (en) 1997-10-16 1998-10-07 Process for preparing a silicon melt from a polysilicon charge

Publications (2)

Publication Number Publication Date
DE69824877D1 true DE69824877D1 (de) 2004-08-05
DE69824877T2 DE69824877T2 (de) 2005-07-28

Family

ID=25491502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69824877T Expired - Lifetime DE69824877T2 (de) 1997-10-16 1998-10-07 Verfahren zur herstellung einer siliziumschmelze von einem polykristallinen siliziumchargiergut

Country Status (8)

Country Link
US (1) US5919303A (de)
EP (1) EP1025288B1 (de)
JP (1) JP4225688B2 (de)
KR (1) KR100506288B1 (de)
CN (1) CN1146678C (de)
DE (1) DE69824877T2 (de)
TW (1) TW429272B (de)
WO (1) WO1999020815A1 (de)

Families Citing this family (45)

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JP3189764B2 (ja) * 1997-09-29 2001-07-16 住友金属工業株式会社 シリコン単結晶原料の溶解方法
US6090198A (en) * 1998-12-07 2000-07-18 Seh America, Inc. Method for reducing thermal shock in a seed crystal during growth of a crystalline ingot
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
US6749683B2 (en) 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6344083B1 (en) 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6454851B1 (en) * 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US6514337B2 (en) 2001-02-07 2003-02-04 Seh America, Inc. Method of growing large-diameter dislocation-free<110> crystalline ingots
JP4698892B2 (ja) * 2001-07-06 2011-06-08 株式会社Ｓｕｍｃｏ Ｃｚ原料供給方法及び供給用治具
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US6605149B2 (en) 2002-01-11 2003-08-12 Hemlock Semiconductor Corporation Method of stacking polycrystalline silicon in process for single crystal production
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
WO2005007941A1 (en) * 2003-07-18 2005-01-27 Jianzhong Yuan An apparatus and method for recharge raw material
US20050232824A1 (en) * 2004-04-14 2005-10-20 Pangrcic Robert A High temperature electrolyte testing container
JP4804348B2 (ja) * 2004-05-21 2011-11-02 株式会社トクヤマ 溶融シリコンの冷却塊状物およびその製造方法
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7291222B2 (en) * 2004-06-18 2007-11-06 Memc Electronic Materials, Inc. Systems and methods for measuring and reducing dust in granular material
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
US20060105105A1 (en) 2004-11-12 2006-05-18 Memc Electronic Materials, Inc. High purity granular silicon and method of manufacturing the same
JP4753308B2 (ja) * 2006-07-13 2011-08-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハ素材の溶解方法及び半導体ウェーハの結晶育成方法
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
WO2010053915A2 (en) * 2008-11-05 2010-05-14 Memc Electronic Materials, Inc. Methods for preparing a melt of silicon powder for silicon crystal growth
JP2011162367A (ja) * 2010-02-05 2011-08-25 Siltronic Japan Corp チョクラルスキー法による無転位単結晶シリコンの製造方法
DE102010018287A1 (de) * 2010-04-26 2011-10-27 Crusible Gmbh Verfahren und Vorrichtung zum Beladen eines Schmelztiegels mit Silizium
JP2012140285A (ja) * 2010-12-28 2012-07-26 Siltronic Japan Corp シリコン単結晶インゴットの製造方法
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN102071456B (zh) * 2011-01-18 2012-09-05 山东舜亦新能源有限公司 一种多晶硅铸锭炉安全监控装置
DE102011003875A1 (de) * 2011-02-09 2012-08-09 Wacker Chemie Ag Verfahren und Vorrichtung zum Dosieren und Verpacken von Polysiliciumbruchstücken sowie Dosier- und Verpackungseinheit
US20120260845A1 (en) * 2011-04-14 2012-10-18 Rec Silicon Inc Polysilicon system
GB2494893A (en) * 2011-09-21 2013-03-27 Rec Wafer Pte Ltd Loading silicon in a crucible
CN102732945B (zh) * 2012-04-13 2015-11-25 英利能源（中国）有限公司 一种单晶硅铸锭装料方法
WO2014037965A1 (en) 2012-09-05 2014-03-13 MEMC ELECTRONIC METERIALS S.p.A. Method of loading a charge of polysilicon into a crucible
WO2014051539A1 (en) * 2012-09-25 2014-04-03 Memc Electronic Materials S.P.A. Method for preparing molten silicon melt using high pressure meltdown
CN103074681B (zh) * 2013-02-17 2016-03-16 英利集团有限公司 一种二次加料方法
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
US10273596B2 (en) 2015-08-20 2019-04-30 Globalwafers Co., Ltd. Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber
CN105239151B (zh) * 2015-09-10 2020-02-14 上海超硅半导体有限公司 多晶硅装料方法
CN108754613A (zh) * 2018-06-13 2018-11-06 江苏星特亮科技有限公司 一种晶体材料熔化方法及熔化设备
CN108754611A (zh) * 2018-06-13 2018-11-06 江苏星特亮科技有限公司 晶体材料熔化方法及熔化设备
DE102018217509A1 (de) 2018-10-12 2020-04-16 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial nach der CZ-Methode aus einer Schmelze und Verfahren unter Verwendung der Vorrichtung
CN109133067B (zh) * 2018-10-16 2023-06-27 青岛蓝光晶科新材料有限公司 一种提高电子束熔炼多晶硅效率的方法及装置
CN109811408B (zh) * 2019-03-26 2021-03-09 无锡坤硅新能源科技有限公司 硅粉在多晶硅铸锭制备中的应用
CN113357913B (zh) * 2021-06-29 2022-12-09 吉利硅谷(谷城)科技有限公司 一种用于多晶硅提纯的电磁加热炉
CN114016124A (zh) * 2021-11-05 2022-02-08 双良硅材料(包头)有限公司 一种颗粒硅的拉晶工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
JPS59156992A (ja) * 1983-02-21 1984-09-06 Toshiba Mach Co Ltd 半導体結晶引上機用リチヤ−ジ装置
JPS6126589A (ja) * 1984-07-12 1986-02-05 Toshiba Mach Co Ltd 単結晶引上機の原料供給装置
JPH01286995A (ja) * 1988-05-12 1989-11-17 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
JPH05139886A (ja) * 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
JP2506525B2 (ja) * 1992-01-30 1996-06-12 信越半導体株式会社 シリコン単結晶の製造方法
JP2531415B2 (ja) * 1992-03-24 1996-09-04 住友金属工業株式会社 結晶成長方法
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5814148A (en) * 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge

Also Published As

Publication number Publication date
KR20010015768A (ko) 2001-02-26
CN1146678C (zh) 2004-04-21
EP1025288B1 (de) 2004-06-30
DE69824877T2 (de) 2005-07-28
TW429272B (en) 2001-04-11
EP1025288A1 (de) 2000-08-09
KR100506288B1 (ko) 2005-08-04
US5919303A (en) 1999-07-06
WO1999020815A1 (en) 1999-04-29
JP4225688B2 (ja) 2009-02-18
CN1276026A (zh) 2000-12-06
JP2001520168A (ja) 2001-10-30

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