DE69824766D1 - Halbleiterlaserbaustein mit verbessertem metallischem Substrat auf einem Peltierelement - Google Patents

Halbleiterlaserbaustein mit verbessertem metallischem Substrat auf einem Peltierelement

Info

Publication number
DE69824766D1
DE69824766D1 DE69824766T DE69824766T DE69824766D1 DE 69824766 D1 DE69824766 D1 DE 69824766D1 DE 69824766 T DE69824766 T DE 69824766T DE 69824766 T DE69824766 T DE 69824766T DE 69824766 D1 DE69824766 D1 DE 69824766D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
peltier element
metallic substrate
improved metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69824766T
Other languages
English (en)
Other versions
DE69824766T2 (de
Inventor
Yoshihiro Dei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Compound Semiconductor Devices Ltd
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Publication of DE69824766D1 publication Critical patent/DE69824766D1/de
Application granted granted Critical
Publication of DE69824766T2 publication Critical patent/DE69824766T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE69824766T 1997-01-09 1998-01-09 Halbleiterlaserbaustein mit verbessertem metallischem Substrat auf einem Peltierelement Expired - Fee Related DE69824766T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9002115A JPH10200208A (ja) 1997-01-09 1997-01-09 半導体レーザーモジュール
JP211597 1997-01-09

Publications (2)

Publication Number Publication Date
DE69824766D1 true DE69824766D1 (de) 2004-08-05
DE69824766T2 DE69824766T2 (de) 2005-07-14

Family

ID=11520362

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69824766T Expired - Fee Related DE69824766T2 (de) 1997-01-09 1998-01-09 Halbleiterlaserbaustein mit verbessertem metallischem Substrat auf einem Peltierelement

Country Status (4)

Country Link
US (1) US6219364B1 (de)
EP (1) EP0853358B1 (de)
JP (1) JPH10200208A (de)
DE (1) DE69824766T2 (de)

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US6114048A (en) 1998-09-04 2000-09-05 Brush Wellman, Inc. Functionally graded metal substrates and process for making same
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
CN1215349C (zh) * 2000-05-31 2005-08-17 古河电气工业株式会社 半导体激光器模块
CA2349430A1 (en) * 2000-05-31 2001-11-30 The Furukawa Electric Co., Ltd. Semiconductor laser diode module
JP3841633B2 (ja) 2000-10-16 2006-11-01 ヤマハ株式会社 半導体レーザモジュール
JP4646166B2 (ja) 2000-11-08 2011-03-09 古河電気工業株式会社 レーザダイオードモジュールからなる光源
US6512291B2 (en) * 2001-02-23 2003-01-28 Agere Systems Inc. Flexible semiconductor device support with integrated thermoelectric cooler and method for making same
US6810049B2 (en) * 2001-03-02 2004-10-26 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module
JP2002280659A (ja) * 2001-03-16 2002-09-27 Furukawa Electric Co Ltd:The レーザダイオードモジュールからなる光源
JP2002293655A (ja) * 2001-03-29 2002-10-09 Ngk Insulators Ltd 金属端子とセラミック部材との接合構造、金属部材とセラミック部材との接合構造および金属端子とセラミック部材との接合材
EP1284530A3 (de) * 2001-06-26 2003-11-26 The Furukawa Electric Co., Ltd. Optisches Modul
US20030002825A1 (en) * 2001-07-02 2003-01-02 Karker Jeffrey A. Carrier sub-assembly with inserts and method for making the same
JP2003152145A (ja) * 2001-08-31 2003-05-23 Sumitomo Electric Ind Ltd 半導体放熱用基板とその製造方法及びパッケージ
AU2002244626A1 (en) * 2002-02-14 2003-09-04 Infineon Technologies Ag Optoelectronic component with a peltier cooler
US6724791B1 (en) 2002-07-02 2004-04-20 C-Cor.Net Corp. Method and apparatus for controlling the temperature of a laser module in fiber optic transmissions
US7692289B2 (en) * 2002-08-12 2010-04-06 Adc Telecommunications, Inc. Semiconductor devices with improved heat dissipation and method for fabricating same
EP1389812A1 (de) * 2002-08-13 2004-02-18 Agilent Technologies Inc Montierungsanordnung für hochfrequente Elektrooptische Elemente
DE10238843B8 (de) * 2002-08-20 2008-01-03 Infineon Technologies Ag Halbleiterbauelement
US20060107986A1 (en) * 2004-01-29 2006-05-25 Abramov Vladimir S Peltier cooling systems with high aspect ratio
US7327026B2 (en) * 2003-11-12 2008-02-05 Sharp Kabushiki Kaisha Vacuum diode-type electronic heat pump device and electronic equipment having the same
JP2005158917A (ja) 2003-11-25 2005-06-16 Sharp Corp 電子ヒートポンプ装置、レーザ部品、光ピックアップおよび電子機器
US7589417B2 (en) * 2004-02-12 2009-09-15 Intel Corporation Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
KR100634538B1 (ko) 2005-02-05 2006-10-13 삼성전자주식회사 효율적인 냉각 구조를 갖는 반도체 발광 소자 및 그 제조방법
US20060179849A1 (en) * 2005-02-14 2006-08-17 Abramov Vladimir S Peltier based heat transfer systems
US7922352B2 (en) * 2005-07-21 2011-04-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Device and method for emitting output light using multiple light sources with photoluminescent material
DE102005036099A1 (de) * 2005-08-01 2007-02-08 Heidelberger Druckmaschinen Ag Vorrichtung zur Temperierung eines Lasermodus in einen Druckplattenbelichter
US7683380B2 (en) 2007-06-25 2010-03-23 Dicon Fiberoptics, Inc. High light efficiency solid-state light emitting structure and methods to manufacturing the same
JP5071157B2 (ja) * 2008-02-29 2012-11-14 富士通オプティカルコンポーネンツ株式会社 光モジュール
JP5773942B2 (ja) * 2012-05-18 2015-09-02 日本電信電話株式会社 半導体レーザモジュール
JP5858879B2 (ja) * 2012-07-18 2016-02-10 日本電信電話株式会社 半導体レーザモジュール
US9587872B2 (en) * 2012-12-03 2017-03-07 Whirlpool Corporation Refrigerator with thermoelectric device control process for an icemaker
JP2015088682A (ja) * 2013-11-01 2015-05-07 ウシオ電機株式会社 半導体レーザ装置
KR20160139028A (ko) * 2014-03-31 2016-12-06 아이피지 포토닉스 코포레이션 고전력 레이저 다이오드 패키징 방법 및 레이저 다이오드 모듈
KR102316864B1 (ko) * 2017-04-10 2021-10-26 삼성디스플레이 주식회사 표시 장치
CN107968315A (zh) * 2017-12-14 2018-04-27 苏州矩阵光电有限公司 一种半导体激光器
US20230122836A1 (en) 2020-04-16 2023-04-20 Sergey GULAK Temperature regulating device assembly for a semiconductor laser
CN115000802A (zh) * 2022-08-04 2022-09-02 中国科学院西安光学精密机械研究所 一种基于微通道次级衬底的半导体激光器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661959A (en) * 1984-02-17 1987-04-28 Ricoh Company, Ltd. Lasing device
JPS62117382A (ja) 1985-11-18 1987-05-28 Omron Tateisi Electronics Co 半導体レ−ザビ−ム発生装置
JPS62276892A (ja) 1986-05-26 1987-12-01 Hitachi Ltd 電子部品
JPH01243488A (ja) 1988-03-25 1989-09-28 Nec Corp 光半導体モジュール
JPH02102756A (ja) 1988-10-11 1990-04-16 Iwata Tosouki Kogyo Kk ２液混合塗布装置及びその塗布用ガン
GB2231713B (en) * 1989-03-30 1994-03-23 Toshiba Kk Semiconductor laser apparatus
JP2959678B2 (ja) * 1990-09-25 1999-10-06 富士通株式会社 半導体レーザモジュール及び該モジュールの製造方法
JPH04240607A (ja) 1991-01-25 1992-08-27 Nec Corp 半導体レーザ装置
JP2652831B2 (ja) 1991-10-09 1997-09-10 株式会社ピーエフユー 印字制御方法
JP2863678B2 (ja) * 1992-09-28 1999-03-03 三菱電機株式会社 半導体レーザ装置及びその製造方法
US5436920A (en) * 1993-05-18 1995-07-25 Matsushita Electric Industrial Co., Ltd. Laser device
JPH07131112A (ja) 1993-11-05 1995-05-19 Mitsubishi Electric Corp レーザダイオードモジュール

Also Published As

Publication number Publication date
EP0853358B1 (de) 2004-06-30
EP0853358A3 (de) 2000-06-14
DE69824766T2 (de) 2005-07-14
JPH10200208A (ja) 1998-07-31
EP0853358A2 (de) 1998-07-15
US6219364B1 (en) 2001-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee